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1. 发明授权

US07863661B2 Solid-state imaging device and camera having the same 有权
标题翻译：固态成像装置和具有相同功能的相机
公开(公告)号：US07863661B2
公开(公告)日：2011-01-04
申请号：US12054038
申请日：2008-03-24
申请人： Motonari Katsuno , Ryohei Miyagawa , Hirohisa Ohtsuki
发明人： Motonari Katsuno , Ryohei Miyagawa , Hirohisa Ohtsuki
IPC分类号： H01L29/72
CPC分类号： H01L27/14603 , H01L27/14609
摘要： Provided is a solid-state imaging device including unit pixels, wherein the unit pixels include two kinds of unit pixels including a first unit pixel and a second unit pixel that are formed on a common well on a semiconductor substrate. The first unit pixel includes: at least one photoelectric conversion region which converts light into a signal charge; the first semiconductor region that is formed on the common well and has a conductivity type identical to that of the common well; and the first contact electrically connected to the first semiconductor region. The second unit pixel includes: at least one photoelectric conversion region; the second semiconductor region that is formed on the common well and has a conductivity type opposite to that of the common well; and the second contact electrically connected to the second semiconductor region.
摘要翻译：提供了一种包括单位像素的固态成像装置，其中单位像素包括形成在半导体衬底上的公共阱上的包括第一单位像素和第二单位像素的两种单位像素。第一单位像素包括：将光转换成信号电荷的至少一个光电转换区域; 所述第一半导体区域形成在所述共同阱上并且具有与所述公用阱的导电类型相同的导电类型; 并且所述第一触点电连接到所述第一半导体区域。第二单位像素包括：至少一个光电转换区域; 所述第二半导体区域形成在所述公井上，并且具有与所述公共井的导电类型相反的导电类型; 并且所述第二触点电连接到所述第二半导体区域。

2. 发明授权

US07800191B2 Solid-state imaging device and method for driving the same 有权
标题翻译：固态成像装置及其驱动方法
公开(公告)号：US07800191B2
公开(公告)日：2010-09-21
申请号：US11716743
申请日：2007-03-12
申请人： Hirohisa Ohtsuki , Motonari Katsuno , Ryohei Miyagawa
发明人： Hirohisa Ohtsuki , Motonari Katsuno , Ryohei Miyagawa
IPC分类号： H01L31/042
CPC分类号： H01L27/14603 , H01L27/14636
摘要： A pixel array is provided in which cells are arranged in a matrix. Each cell includes a photodiode, an FD, a transfer transistor, a reset transistor, an amplifying transistor having a gate electrode connected to the FD, a drain connected to a power supply line, and a source connected to a vertical signal line, and an FD wire. The FD wire is provided in a first wiring line, and the vertical signal line is provided in a second wiring line positioned over the first wiring layer. Since the potential of the FD wire follows the potential of the vertical signal line, it is possible to suppress a variation in capacitance occurring in the FD when a position of the vertical signal is shifted, depending on a position of the cell.
摘要翻译：提供了像素阵列，其中单元被布置成矩阵。每个单元包括光电二极管，FD，传输晶体管，复位晶体管，具有连接到FD的栅电极的放大晶体管，连接到电源线的漏极和连接到垂直信号线的源，以及 FD线。 FD线设置在第一布线中，垂直信号线设置在位于第一布线层上的第二布线中。由于FD线的电位跟随垂直信号线的电位，所以根据单元的位置，当垂直信号的位置偏移时，有可能抑制在FD中发生的电容的变化。

3. 发明授权

US07906827B2 Solid-state imaging device 有权
标题翻译：固态成像装置
公开(公告)号：US07906827B2
公开(公告)日：2011-03-15
申请号：US12172548
申请日：2008-07-14
申请人： Motonari Katsuno , Ryohei Miyagawa , Hirohisa Ohtsuki
发明人： Motonari Katsuno , Ryohei Miyagawa , Hirohisa Ohtsuki
IPC分类号： H01L27/146
CPC分类号： H01L27/14603 , H01L27/14605 , H01L27/14609 , H01L27/14623 , H01L27/14627 , H01L27/14636 , H01L27/14643
摘要： A solid-state imaging device includes a first wiring layer, a second wiring layer, a substrate contact, and a first contact. The arrangement of the substrate contact with respect to a light-receiving section forming a peripheral pixel is shifted, or not shifted, from the arrangement of the substrate contact with respect to a light-receiving section forming a central pixel, by a shift amount r from the peripheral portion toward the central portion. The arrangement of the first contact with respect to the light-receiving section of the peripheral pixel is shifted from the arrangement of the first contact with respect to the light-receiving section of the central pixel, by a shift amount s1 from the peripheral portion toward the central portion. The shift amount s1 is greater than the shift amount r.
摘要翻译：固态成像装置包括第一布线层，第二布线层，基板接触和第一接触。衬底接触相对于形成周边像素的光接收部分的布置相对于形成中心像素的光接收部分从衬底接触件的布置偏移或不偏移移位量r 从周边部朝向中央部。第一接触件相对于周边像素的光接收部分的布置从第一接触件相对于中心像素的光接收部分的布置移位到从周边部分朝向中央部分。移位量s1大于移动量r。

4. 发明授权

US07847848B2 Solid-state imaging device having a plurality of lines formed in at least two layers on semiconductor substrate 失效
标题翻译：具有在半导体衬底上形成至少两层的多条线的固态成像器件
公开(公告)号：US07847848B2
公开(公告)日：2010-12-07
申请号：US11969527
申请日：2008-01-04
申请人： Hirohisa Ohtsuki , Ryohei Miyagawa , Motonari Katsuno , Mikiya Uchida
发明人： Hirohisa Ohtsuki , Ryohei Miyagawa , Motonari Katsuno , Mikiya Uchida
IPC分类号： H04N9/64 , H04N3/14 , H04N5/335 , H01L31/062
CPC分类号： H01L27/14603 , H01L27/14623 , H01L27/14643
摘要： In a MOS-type solid-state imaging device 1, in pixels 101 to 104 in which lines in an upper layer (charge transfer lines 1018 to 1048) are formed in shifted positions located toward a center L1 of an image area, each two oppositely disposed pixels with the center L1 of the image area sandwiched therebetween, such as a pixel 101 and a pixel 104 have the following relation. In each of the pixels 101 and 104, power supply lines 1016 and 1046, vertical signal lines 1017 and 1047, and charge transfer lines 1018 and 1048 relating to each of the pixels 101 and 104 are arranged symmetrically with respect to an imaginary plane extending from the center L1 of a sensor 10 in a direction orthogonal to the drawing page in an X-axis direction.
摘要翻译：在MOS型固态成像装置1中，在像素101〜104中，上层（电荷传输线1018〜1048）中的线形成在位于图像区域的中心L1的移位位置，位于像素101和像素104之间的图像区域的中心L1的位置像素具有以下关系。在每个像素101和104中，与像素101和104中的每一个相关的电源线1016和1046，垂直信号线1017和1047以及电荷传输线1018和1048相对于从传感器10的中心L1在X轴方向上与绘图页正交的方向上。

5. 发明申请

US20070210398A1 Solid-state imaging device and method for driving the same 有权
标题翻译：固态成像装置及其驱动方法
公开(公告)号：US20070210398A1
公开(公告)日：2007-09-13
申请号：US11716743
申请日：2007-03-12
申请人： Hirohisa Ohtsuki , Motonari Katsuno , Ryohei Miyagawa
发明人： Hirohisa Ohtsuki , Motonari Katsuno , Ryohei Miyagawa
IPC分类号： H01L27/14
CPC分类号： H01L27/14603 , H01L27/14636
摘要： A pixel array is provided in which cells are arranged in a matrix. Each cell includes a photodiode, an FD, a transfer transistor, a reset transistor, an amplifying transistor having a gate electrode connected to the FD, a drain connected to a power supply line, and a source connected to a vertical signal line, and an FD wire. The FD wire is provided in a first wiring line, and the vertical signal line is provided in a second wiring line positioned over the first wiring layer. Since the potential of the FD wire follows the potential of the vertical signal line, it is possible to suppress a variation in capacitance occurring in the FD when a position of the vertical signal is shifted, depending on a position of the cell.
摘要翻译：提供了像素阵列，其中单元被布置成矩阵。每个单元包括光电二极管，FD，传输晶体管，复位晶体管，具有连接到FD的栅电极的放大晶体管，连接到电源线的漏极和连接到垂直信号线的源，以及 FD线。 FD线设置在第一布线中，垂直信号线设置在位于第一布线层上的第二布线中。由于FD线的电位跟随垂直信号线的电位，所以根据单元的位置，当垂直信号的位置偏移时，有可能抑制在FD中发生的电容的变化。

6. 发明申请

US20090008687A1 SOLID-STATE IMAGING DEVICE AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：固态成像装置及其制造方法
公开(公告)号：US20090008687A1
公开(公告)日：2009-01-08
申请号：US12166736
申请日：2008-07-02
申请人： Motonari Katsuno , Ryohei Miyagawa
发明人： Motonari Katsuno , Ryohei Miyagawa
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L27/14627 , H01L27/14623 , H01L27/14636
摘要： A solid-state imaging device includes: an imaging area in which light receiving portions are disposed; an interconnect layer disposed on the light receiving portions, the interconnect layer including metal interconnects having openings and first insulating films; inner-layer lenses formed over the interconnect layer in one-to-one relationship with the light receiving portions; a transparent second insulating film formed on the interconnect layer and the inner-layer lenses; top lenses formed on the second insulating film in one-to-one relationship with the light receiving portions, an upper face of each of the top lenses being a convexly curved face; and a transparent film on the top lenses, the transparent film being formed of a material having a refractive index smaller than a refractive index of the top lenses. In this way, a focal point of at least part of incident light can be situated above a semiconductor substrate.
摘要翻译：固态成像装置包括：配置有光接收部的摄像区域; 布置在所述光接收部分上的互连层，所述互连层包括具有开口的金属互连和第一绝缘膜; 在所述互连层上形成与所述光接收部分成一对一关系的内层透镜; 形成在所述互连层和所述内层透镜上的透明的第二绝缘膜; 与所述光接收部分成一对一关系地形成在所述第二绝缘膜上的顶部透镜，所述顶部透镜的上表面是凸曲面; 以及在顶部透镜上的透明膜，透明膜由折射率小于顶部透镜的折射率的材料形成。以这种方式，入射光的至少一部分的焦点可以位于半导体衬底之上。

7. 发明申请

US20070290242A1 Solid-state imaging device having transmission gates which pass over part of photo diodes when seen from the thickness direction of the semiconductor substrate 审中-公开
标题翻译：具有从半导体基板的厚度方向观察时通过了一部分光电二极管的传输门的固态成像装置
公开(公告)号：US20070290242A1
公开(公告)日：2007-12-20
申请号：US11806715
申请日：2007-06-04
申请人： Motonari Katsuno , Ryohei Miyagawa
发明人： Motonari Katsuno , Ryohei Miyagawa
IPC分类号： H01L31/113
CPC分类号： H01L27/14609 , H01L27/14603
摘要： A solid-imaging device having a plurality of image pixels arranged along a main surface of a semiconductor substrate, wherein each of the plurality of image pixels includes a photodiode that converts incident light into an electric charge and a transmission gate that is formed so as to have a crossing area that partially passes over the photodiode when seen from the thickness direction of the semiconductor substrate. The transmission gate of the solid-state imaging device is formed in a manner that (i) a first region including a laminated body of a silicon film and a silicide film, and (ii) a second region that includes the silicon film and does not include the silicide film, both arranged along a main surface of the semiconductor substrate, and the second region in the transmission gate is formed in at least one part of the crossing area.
摘要翻译：一种具有沿着半导体基板的主表面布置的多个图像像素的固体成像装置，其中，所述多个图像像素中的每一个包括将入射光转换为电荷的光电二极管和形成为具有从半导体基板的厚度方向观察时部分地越过光电二极管的交叉区域。固态成像装置的传输门形成为：（i）包括硅膜和硅化物膜的层叠体的第一区域，以及（ii）包含硅膜的第二区域，不包括硅膜包括沿着半导体衬底的主表面布置的硅化物膜，并且传输门中的第二区域形成在交叉区域的至少一部分中。

8. 发明授权

US07859587B2 Solid-state image pickup device 有权
标题翻译：固态图像拾取装置
公开(公告)号：US07859587B2
公开(公告)日：2010-12-28
申请号：US11723459
申请日：2007-03-20
申请人： Motonari Katsuno , Ryohei Miyagawa
发明人： Motonari Katsuno , Ryohei Miyagawa
IPC分类号： H04N5/225
CPC分类号： H04N5/335
摘要： In a solid-state image pickup device, it is difficult to match an optimum incidence angle corresponding to an image height of a pixel array region with light incidence characteristics of a camera lens, thereby causing image quality deterioration due to sensitivity shading. Respective microlenses are disposed in a two-dimensional manner, i.e., in a row and a column directions. In particular, the microlenses are disposed such that each side of a disposition region where the microlenses are disposed has a concave curve with respect to a line connecting adjacent vertexes of the disposition region. In other words, a distance AH (AV) between center points of a pair of facing sides of the disposition region is set to be smaller than a distance BH (BV) between neighboring vertexes of the disposition region.
摘要翻译：在固态图像拾取装置中，难以将与像素阵列区域的图像高度相对应的最佳入射角与相机透镜的光入射特性相匹配，从而导致由于灵敏度阴影引起的图像质量劣化。各个微透镜以二维方式设置，即以行和列方向布置。特别地，微透镜被布置成使得布置微透镜的布置区域的每一侧相对于连接配置区域的相邻顶点的线具有凹曲线。换句话说，配置区域的一对相对侧的中心点之间的距离AH（AV）被设定为小于配置区域的相邻顶点之间的距离BH（BV）。

9. 发明授权

US07777260B2 Solid-state imaging device 有权
标题翻译：固态成像装置
公开(公告)号：US07777260B2
公开(公告)日：2010-08-17
申请号：US12166736
申请日：2008-07-02
申请人： Motonari Katsuno , Ryohei Miyagawa
发明人： Motonari Katsuno , Ryohei Miyagawa
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L27/14627 , H01L27/14623 , H01L27/14636
摘要： A solid-state imaging device includes: an imaging area in which light receiving portions are disposed; an interconnect layer disposed on the light receiving portions, the interconnect layer including metal interconnects having openings and first insulating films; inner-layer lenses formed over the interconnect layer in one-to-one relationship with the light receiving portions; a transparent second insulating film formed on the interconnect layer and the inner-layer lenses; top lenses formed on the second insulating film in one-to-one relationship with the light receiving portions, an upper face of each of the top lenses being a convexly curved face; and a transparent film on the top lenses, the transparent film being formed of a material having a refractive index smaller than a refractive index of the top lenses. In this way, a focal point of at least part of incident light can be situated above a semiconductor substrate.
摘要翻译：固态成像装置包括：配置有光接收部的摄像区域; 布置在所述光接收部分上的互连层，所述互连层包括具有开口的金属互连和第一绝缘膜; 在所述互连层上形成与所述光接收部分成一对一关系的内层透镜; 形成在所述互连层和所述内层透镜上的透明的第二绝缘膜; 与所述光接收部分成一对一关系地形成在所述第二绝缘膜上的顶部透镜，所述顶部透镜的上表面是凸曲面; 以及在顶部透镜上的透明膜，透明膜由折射率小于顶部透镜的折射率的材料形成。以这种方式，入射光的至少一部分的焦点可以位于半导体衬底之上。

10. 发明申请

US20100187582A1 SOLID-STATE IMAGING DEVICE HAVING TRANSMISSION GATES WHICH PASS OVER PART OF PHOTO DIODES WHEN SEEN FROM THE THICKNESS DIRECTION OF THE SEMICONDUCTOR SUBSTRATE 审中-公开
标题翻译：当从半导体衬底的厚度方向观察到具有透光栅的透射栅的固态成像装置
公开(公告)号：US20100187582A1
公开(公告)日：2010-07-29
申请号：US12752624
申请日：2010-04-01
申请人： Motonari Katsuno , Ryohei Miyagawa
发明人： Motonari Katsuno , Ryohei Miyagawa
IPC分类号： H01L31/113
CPC分类号： H01L27/14609 , H01L27/14603
摘要： A solid-state imaging device having a plurality of image pixels arranged along a main surface of a semiconductor substrate, wherein each of the plurality of image pixels includes a photodiode that converts incident light into an electric charge and a transmission gate that is formed so as to have a crossing area that partially passes over the photodiode when seen from the thickness direction of the semiconductor substrate. The transmission gate of the solid-state imaging device is formed in a manner that (i) a first region including a laminated body of a silicon film and a silicide film, and (ii) a second region that includes the silicon film and does not include the silicide film, both arranged along a main surface of the semiconductor substrate, and the second region in the transmission gate is formed in at least one part of the crossing area.
摘要翻译：一种固态成像装置，具有沿着半导体基板的主表面排列的多个图像像素，其中，所述多个图像像素中的每一个都包括将入射光转换成电荷的光电二极管和形成为具有从半导体基板的厚度方向观察时部分地越过光电二极管的交叉区域。固态成像装置的传输门形成为：（i）包括硅膜和硅化物膜的层叠体的第一区域，以及（ii）包含硅膜的第二区域，不包括硅膜包括沿着半导体衬底的主表面布置的硅化物膜，并且传输门中的第二区域形成在交叉区域的至少一部分中。

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