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1. 发明申请

US20070109432A1 Solid state imaging device, method for driving the same, and camera 有权
标题翻译：固态成像装置，其驱动方法和相机
公开(公告)号：US20070109432A1
公开(公告)日：2007-05-17
申请号：US11528523
申请日：2006-09-28
申请人： Takumi Yamaguchi , Takahiko Murata , Shigetaka Kasuga , Takayoshi Yamada , Yoshiyuki Matsunaga , Ryohei Miyagawa
发明人： Takumi Yamaguchi , Takahiko Murata , Shigetaka Kasuga , Takayoshi Yamada , Yoshiyuki Matsunaga , Ryohei Miyagawa
IPC分类号： H04N3/14 , H04N5/335
CPC分类号： H04N5/3741 , H04N5/3742
摘要： A solid state imaging device includes an imaging area where a plurality of first pixels and a plurality of second pixels are respectively arranged in the form of a matrix, each of the first pixels and the second pixels having a photoelectric conversion portion and outputting a signal in accordance with brightness of incident light when selected; a plurality of first memories that respectively store signals of selected first pixels out of the plurality of first pixels; and a plurality of second memories that are respectively connected in parallel to the first memories and respectively store signals of selected second pixels out of the plurality of second pixels. The signals stored in the first memories and in the second memories are successively read to a horizontal signal line.
摘要翻译：固态成像装置包括其中多个第一像素和多个第二像素分别以矩阵形式布置的成像区域，每个第一像素和第二像素具有光电转换部分，并且输出信号根据入射光的亮度选择; 多个第一存储器，分别存储多个第一像素中所选择的第一像素的信号; 以及分别与第一存储器并联连接并分别存储多个第二像素中所选择的第二像素的信号的多个第二存储器。存储在第一存储器和第二存储器中的信号被连续地读取到水平信号线。

2. 发明授权

US07567281B2 Solid state imaging device, method for driving the same, and camera 有权
标题翻译：固态成像装置，其驱动方法和相机
公开(公告)号：US07567281B2
公开(公告)日：2009-07-28
申请号：US11528523
申请日：2006-09-28
申请人： Takumi Yamaguchi , Takahiko Murata , Shigetaka Kasuga , Takayoshi Yamada , Yoshiyuki Matsunaga , Ryohei Miyagawa
发明人： Takumi Yamaguchi , Takahiko Murata , Shigetaka Kasuga , Takayoshi Yamada , Yoshiyuki Matsunaga , Ryohei Miyagawa
IPC分类号： H04N3/14 , H04N5/335
CPC分类号： H04N5/3741 , H04N5/3742
摘要： A solid state imaging device includes an imaging area where a plurality of first pixels and a plurality of second pixels are respectively arranged in the form of a matrix, each of the first pixels and the second pixels having a photoelectric conversion portion and outputting a signal in accordance with brightness of incident light when selected; a plurality of first memories that respectively store signals of selected first pixels out of the plurality of first pixels; and a plurality of second memories that are respectively connected in parallel to the first memories and respectively store signals of selected second pixels out of the plurality of second pixels. The signals stored in the first memories and in the second memories are successively read to a horizontal signal line.
摘要翻译：固态成像装置包括其中多个第一像素和多个第二像素分别以矩阵形式布置的成像区域，每个第一像素和第二像素具有光电转换部分，并且输出信号根据入射光的亮度选择; 多个第一存储器，分别存储多个第一像素中所选择的第一像素的信号; 以及分别与第一存储器并联连接并分别存储多个第二像素中所选择的第二像素的信号的多个第二存储器。存储在第一存储器和第二存储器中的信号被连续地读取到水平信号线。

3. 发明授权

US07626622B2 Solid state image pickup device and camera using the same 有权
公开(公告)号：US07626622B2
公开(公告)日：2009-12-01
申请号：US10584883
申请日：2005-01-11
申请人： Shigetaka Kasuga , Takumi Yamaguchi , Takahiko Murata , Yoshiyuki Matsunaga , Ryohei Miyagawa , Atsushi Ueta
发明人： Shigetaka Kasuga , Takumi Yamaguchi , Takahiko Murata , Yoshiyuki Matsunaga , Ryohei Miyagawa , Atsushi Ueta
IPC分类号： H04N5/335
CPC分类号： H04N5/357 , H04N5/378
摘要： A solid state image pickup device 110 is provided with: a plurality of pixel units 10 that are arranged two-dimensionally and include a photoelectric conversion unit (photodiode PD) that converts light into a charge and an amplification unit (amplifier Q13) that converts the charge into a voltage and outputs it; a plurality of noise signal removal units (noise cancellation units 40) that are provided one for each column and remove noises contained in the voltage outputted from the amplifier Q31 of the pixel unit 10 belonging to the column; and a plurality of column amplification units (column amplifiers 70) that amplify the voltage outputted from the amplifier Q13 of the pixel unit 10 and output the amplified voltage to the noise cancellation unit 40, and enables increase in sensitivity and reduction in noise with low power consumption.

4. 发明申请

US20090021619A1 Solid state image pickup device and camera using the same 有权
标题翻译：固态摄像装置和使用相机的相机
公开(公告)号：US20090021619A1
公开(公告)日：2009-01-22
申请号：US10584883
申请日：2005-01-11
申请人： Shigetaka Kasuga , Takumi Yamaguchi , Takahiko Murata , Yoshiyuki Matsunaga , Ryohei Miyagawa , Atsushi Ueta
发明人： Shigetaka Kasuga , Takumi Yamaguchi , Takahiko Murata , Yoshiyuki Matsunaga , Ryohei Miyagawa , Atsushi Ueta
IPC分类号： H04N5/335
CPC分类号： H04N5/357 , H04N5/378
摘要： A solid state image pickup device 110 is provided with: a plurality of pixel units 10 that are arranged two-dimensionally and include a photoelectric conversion unit (photodiode PD) that converts light into a charge and an amplification unit (amplifier Q13) that converts the charge into a voltage and outputs it; a plurality of noise signal removal units (noise cancellation units 40) that are provided one for each column and remove noises contained in the voltage outputted from the amplifier Q31 of the pixel unit 10 belonging to the column; and a plurality of column amplification units (column amplifiers 70) that amplify the voltage outputted from the amplifier Q13 of the pixel unit 10 and output the amplified voltage to the noise cancellation unit 40, and enables increase in sensitivity and reduction in noise with low power consumption.
摘要翻译：固态图像拾取装置110具有：二维排列的多个像素单元10，包括将光转换为电荷的光电转换单元（光电二极管PD）和将光转换成电荷的放大单元（放大器Q13）充电到电压并输出; 多个噪声信号去除单元（噪声消除单元40），其针对每列设置一个，并且去除包含在属于列的像素单元10的放大器Q31输出的电压中的噪声; 以及多个列放大单元（列放大器70），其放大从像素单元10的放大器Q13输出的电压，并将放大的电压输出到噪声消除单元40，并且能够以低功率提高灵敏度和降低噪声消费。

5. 发明授权

US5506429A CCD image sensor with stacked charge transfer gate structure 失效
标题翻译： CCD图像传感器具有堆叠的电荷转移门结构
公开(公告)号：US5506429A
公开(公告)日：1996-04-09
申请号：US208750
申请日：1994-03-11
申请人： Nagataka Tanaka , Nobuo Nakamura , Yoshiyuki Matsunaga , Shinji Ohsawa , Michio Sasaki , Hirofumi Yamashita , Ryohei Miyagawa
发明人： Nagataka Tanaka , Nobuo Nakamura , Yoshiyuki Matsunaga , Shinji Ohsawa , Michio Sasaki , Hirofumi Yamashita , Ryohei Miyagawa
IPC分类号： H01L27/148 , H04N5/335 , H04N5/341 , H04N5/357 , H04N5/3728 , H01L29/765
CPC分类号： H01L27/14831
摘要： A CCD imager has an array of rows and columns of picture elements on a semiconductor substrate. A vertical charge transfer gate section extends in a first direction on the substrate to be associated with the columns. The transfer gate section includes CCD channels in the substrate, and insulated transfer gate electrodes overlying these CCD channels. A plurality of buffer electrodes are formed at a first level over the substrate surface to overlie the transfer gate electrodes. A plurality of shunt wires are formed at a second level over the substrate surface to overlie the buffer electrodes. The charge transfer gate electrodes and the buffer electrodes are connected with each other by first contact holes. The buffer electrodes and the shunt wires are coupled together by second contact holes. The second contact holes are distributed so that the repeat period thereof as defined at least in a second direction transverse to the first direction on the substrate is equal to or less than two picture elements, whereby their spatial frequency at least in the second direction is half the sampling frequency of photoconversion in the CCD imager, or more.
摘要翻译： CCD成像器在半导体衬底上具有一列行和列的像素。垂直电荷转移栅极部分在衬底上的第一方向上延伸以与柱相关联。传输门部分包括衬底中的CCD通道，以及覆盖这些CCD通道的绝缘传输栅电极。多个缓冲电极形成在衬底表面上的第一层上以覆盖传输栅电极。在衬底表面上的第二层上形成多个分流电线以覆盖缓冲电极。电荷转移栅电极和缓冲电极通过第一接触孔相互连接。缓冲电极和并联线通过第二接触孔耦合在一起。分布第二接触孔，使得其至少沿与衬底上的第一方向横切的第二方向限定的重复周期等于或小于两个图像元素，由此其至少在第二方向上的空间频率为一半 CCD成像仪中光电转换的采样频率，或更多。

6. 发明授权

US5504526A Solid-state image sensing device with storage-diode potential controller 失效
标题翻译：具有存储二极管电位控制器的固态摄像装置
公开(公告)号：US5504526A
公开(公告)日：1996-04-02
申请号：US155833
申请日：1993-11-23
申请人： Ryohei Miyagawa , Shinji Ohsawa , Hirofumi Yamashita , Michio Sasaki , Yoshiyuki Matsunaga
发明人： Ryohei Miyagawa , Shinji Ohsawa , Hirofumi Yamashita , Michio Sasaki , Yoshiyuki Matsunaga
IPC分类号： H01L27/148 , H04N1/028 , H04N5/335 , H04N5/341 , H04N5/365 , H04N5/369 , H04N5/3728 , H04N5/376
CPC分类号： H04N5/3728 , H01L27/14831 , H04N5/3597
摘要： A solid-state imaging device includes a substrate, and an array of charge-packet storage cells or picture elements (or "pixels") arranged on the substrate, each including a storage diode that stores therein a signal charge packet indicative of an incident light. A charge transfer section is coupled with the array of picture elements. The transfer section includes a charge-coupled device (CCD) register layer that is spaced apart from the storage diode to define a channel region therebetween, and a first insulated electrode overlying the register layer and the channel region. A reset section is coupled to the storage diode, for potentially resetting the storage diode by additionally injecting an extra charge packet into the storage diode and by causing the charge to drained from the storage diode. A potential controller is provided which forces, when a signal charge packet is read out of the storage diode toward the CCD register layer, the storage diode to decrease in potential so that the storage diode becomes potentially less than its potential as set during the reset operation, while causing the channel region to be fixed at almost the same potential during the read operation and the reset operation.
摘要翻译：固态成像装置包括基板和布置在基板上的电荷分组存储单元或像素（或“像素”）的阵列，每个包括存储二极管，其中存储指示入射光的信号电荷分组。电荷转移部分与图像元素阵列耦合。转印部分包括与存储二极管间隔开以限定它们之间的沟道区域的电荷耦合器件（CCD）寄存器层，以及覆盖寄存器层和沟道区域的第一绝缘电极。复位部分耦合到存储二极管，用于通过额外地将额外的电荷分组注入到存储二极管中并通过使电荷从存储二极管排出来潜在地复位存储二极管。提供了一种电位控制器，当将信号电荷分组从存储二极管朝向CCD寄存器层读出时，存储二极管降低电位，使得存储二极管潜在地小于其在复位操作期间设置的电位同时在读取操作和复位操作期间使通道区域固定在几乎相同的电位。

7. 发明授权

US5210433A Solid-state CCD imaging device with transfer gap voltage controller 失效
标题翻译：带传输间隙电压控制器的固态CCD成像装置
公开(公告)号：US5210433A
公开(公告)日：1993-05-11
申请号：US962003
申请日：1992-10-15
申请人： Shinji Ohsawa , Yoshiyuki Matsunaga , Ryohei Miyagawa
发明人： Shinji Ohsawa , Yoshiyuki Matsunaga , Ryohei Miyagawa
IPC分类号： H01L27/148 , H01L29/768
CPC分类号： H01L29/76841 , H01L27/14831
摘要： A solid-state CCD imaging device has a substrate, photosensitive pixel cells provided as pixel sections in the substrate, and a transfer section, provided in the substrate, for transferring signal charge carriers read out from the pixel cells in a predetermined transfer direction. The transfer section has a semiconductive charge transfer channel layer formed in the substrate and transfer electrodes insulatively provided above the substrate and arrayed in the above direction while predetermined gap sections are kept therebetween. Each of the transfer electrodes defines one charge transfer stage. A gap potential control electrode layer is insulatively disposed above the electrodes. The gap potential control electrode layer is applied with a gap potential control voltage and steadily sets, in accordance with the applied voltage, the potential in layer sections of the channel layer located below the gap section of the transfer electrodes at a predetermined level intermediate between "High" and "Low" level voltages of the channel layers upon charge transfer.
摘要翻译：固体CCD成像装置具有基板，设置在基板中的像素部的感光像素单元和设置在基板中的转印部，用于传送沿预定的传送方向从像素单元读出的信号电荷载流子。转印部分具有形成在衬底中的半导体电荷转移沟道层，并且绝缘地设置在衬底上方并沿上述方向排列的传输电极，同时保持预定的间隙部分。每个转移电极限定一个电荷转移级。间隙电位控制电极层绝缘地设置在电极上方。间隙电位控制电极层被施加间隙电位控制电压，并且根据施加的电压稳定地将位于传输电极的间隙部分下方的沟道层的层部分中的电位设置在“ 电荷转移时通道层的“高”和“低”电平电压。

8. 发明授权

US06507365B1 Solid-state imaging device 有权
标题翻译：固态成像装置
公开(公告)号：US06507365B1
公开(公告)日：2003-01-14
申请号：US09450749
申请日：1999-11-30
申请人： Nobuo Nakamura , Yoshitaka Egawa , Shinji Ohsawa , Yukio Endo , Yoshiyuki Matsunaga , Yoriko Tanaka , Fumio Izawa , Hiroki Miura , Ryohei Miyagawa , Ikuko Inoue , Tsuyoshi Arakawa , Yoshiyuki Tomizawa , Makoto Hoshino
发明人： Nobuo Nakamura , Yoshitaka Egawa , Shinji Ohsawa , Yukio Endo , Yoshiyuki Matsunaga , Yoriko Tanaka , Fumio Izawa , Hiroki Miura , Ryohei Miyagawa , Ikuko Inoue , Tsuyoshi Arakawa , Yoshiyuki Tomizawa , Makoto Hoshino
IPC分类号： H04N314
CPC分类号： H04N5/361 , H04N5/23274 , H04N5/2357 , H04N5/3452 , H04N5/3454 , H04N5/353 , H04N5/374
摘要： A solid-state imaging device with a variable (continuous) electronic shutter function comprises an imaging area where unit cells with photodiodes acting as pixels are arranged two-dimensionally, read lines for driving the read transistors in each pixel row, vertical selection lines for driving the vertical selection transistors in each pixel row, a vertical driving circuit for selectively driving vertical selection lines, vertical signal lines for outputting the signal from each unit cell in the pixel rows driven sequentially, and a row selection circuit for controlling the vertical driving circuit in such a manner that the vertical driving circuit drives the read transistors in each pixel row with the desired signal storage timing and signal read timing twice in that order and thereby drives the vertical selection transistors in the pixel row in synchronization with the signal read timing.
摘要翻译：具有可变（连续）电子快门功能的固态成像装置包括成像区域，其中以二维作为像素的光电二极管的单位单元被二维布置，用于驱动每个像素行中的读取晶体管的读取线，用于驱动的垂直选择线每个像素行中的垂直选择晶体管，用于选择性地驱动垂直选择线的垂直驱动电路，用于输出依次驱动的像素行中的每个单元的信号的垂直信号线和用于控制垂直驱动电路的行选择电路垂直驱动电路以期望的信号存储定时和信号读取定时以该顺序驱动每个像素行中的读取晶体管，从而与信号读取定时同步地驱动像素行中的垂直选择晶体管。

9. 发明授权

US07696546B2 Solid-state imaging device having wiring layer which includes lamination of silicide layer in order to reduce wiring resistance, and manufacturing method for the same 失效
标题翻译：具有包括硅化物层的叠层以便降低布线电阻的布线层的固态成像装置及其制造方法
公开(公告)号：US07696546B2
公开(公告)日：2010-04-13
申请号：US12015930
申请日：2008-01-17
申请人： Tatsuya Hirata , Shouzi Tanaka , Ryohei Miyagawa
发明人： Tatsuya Hirata , Shouzi Tanaka , Ryohei Miyagawa
IPC分类号： H01L31/062
CPC分类号： H01L27/14689 , H01L27/14603 , H01L27/14623 , H01L27/14636 , H01L27/14643
摘要： A silicide layer (first silicide layer, second silicide layer) is laminated on top laminate surfaces of gates of a transmission transistor and a reset transistor, respectively. Each of the first silicide layer and the second silicide layer respectively formed on each of the gates extends in a direction along the main surface of the semiconductor substrate among at least a portion of a plurality of image pixels, connecting gates with one another among the respective image pixels. On the other hand, a signal outputter is not in contact with any silicide layers, has the top laminate surface that is covered with an insulating layer, and is connected with other transistors via a metal wiring layer.
摘要翻译：硅化物层（第一硅化物层，第二硅化物层）分别层叠在透射晶体管和复位晶体管的栅极的顶层叠表面上。分别形成在每个栅极上的第一硅化物层和第二硅化物层中的每一个在多个图像像素的至少一部分中沿着半导体衬底的主表面的方向延伸，在相应的多个图像像素中彼此连接栅极图像像素。另一方面，信号输出器不与任何硅化物层接触，顶层叠表面被绝缘层覆盖，并且通过金属布线层与其它晶体管连接。

10. 发明授权

US07485939B2 Solid-state imaging device having a defect control layer and an inversion layer between a trench and a charge accumulating area 有权
标题翻译：具有缺陷控制层和沟槽与电荷累积区之间的反型层的固态成像装置
公开(公告)号：US07485939B2
公开(公告)日：2009-02-03
申请号：US11435098
申请日：2006-05-17
申请人： Shouzi Tanaka , Ryohei Miyagawa
发明人： Shouzi Tanaka , Ryohei Miyagawa
IPC分类号： H01L27/146
CPC分类号： H01L27/1463 , H01L27/14603 , H01L27/14609 , H01L27/14689
摘要： An inversion layer is formed in a part as a boundary between (a) a defect control layer formed along a trench surface for isolating pixel calls and (b) a photo diode. The defect control layer is a P-type, and the photo diode and the inversion layer are N-type. Here, an impurity concentration in the inversion layer is at least twice as high as an impurity concentration in the photo diode.
摘要翻译：在（a）沿着沟槽表面形成的用于隔离像素调用的缺陷控制层和（b）光电二极管之间的边界部分中形成反转层。缺陷控制层为P型，光电二极管和反型层为N型。这里，反转层中的杂质浓度至少是光电二极管中杂质浓度的两倍。

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