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1. 发明授权

US07317218B2 Solid-state imaging device having a punch-through stopper region positioned closer to a signal accumulation region than is an end of the drain region 有权
标题翻译：具有比漏极区域的端部更靠近信号聚集区域的穿通停止区域的固态成像装置
公开(公告)号：US07317218B2
公开(公告)日：2008-01-08
申请号：US11263973
申请日：2005-11-02
申请人： Syouji Tanaka , Ryohei Miyagawa , Kazunari Koga , Tatsuya Hirata , Hiroki Nagasaki
发明人： Syouji Tanaka , Ryohei Miyagawa , Kazunari Koga , Tatsuya Hirata , Hiroki Nagasaki
IPC分类号： H01L31/062
CPC分类号： H01L27/14643 , H01L27/14632 , H01L27/14687 , H01L27/14689 , H01L31/035236
摘要： A solid-state imaging device can increase the amount of signal charge accumulation in a photodiode. The solid-state imaging device includes a gate electrode formed on a p-type semiconductor substrate. An n-type signal accumulation region accumulates the signal charge obtained through a photo-electrical conversion, and is formed in the semiconductor substrate so that a portion of the signal accumulation region is positioned below the gate electrode. An n-type drain region is positioned in the semiconductor substrate so that the n-type drain region is positioned opposite the signal accumulation region across the gate electrode. A p-type punch-through stopper region has a higher impurity concentration than the semiconductor substrate, and is formed in the semiconductor substrate so that the p-type punch-through region is positioned below the drain region, wherein an end of the punch-through stopper region is positioned closer to the signal accumulation region than the end of the drain region.
摘要翻译：固态成像装置可以增加光电二极管中的信号电荷积累量。固态成像器件包括形成在p型半导体衬底上的栅电极。 n型信号累积区域累积通过光电转换获得的信号电荷，并且形成在半导体衬底中，使得信号聚集区域的一部分位于栅电极下方。 n型漏极区域位于半导体衬底中，使得n型漏极区域与栅电极两端的信号聚集区域相对。 p型穿通停止区域具有比半导体衬底更高的杂质浓度，并且形成在半导体衬底中，使得p型穿通区域位于漏极区域下方，其中，通过停止区域比漏极区域的端部更靠近信号聚集区域。

2. 发明申请

US20060157756A1 Solid-state imaging device and manufacturing method thereof 有权
标题翻译：固态成像装置及其制造方法
公开(公告)号：US20060157756A1
公开(公告)日：2006-07-20
申请号：US11263973
申请日：2005-11-02
申请人： Syouji Tanaka , Ryohei Miyagawa , Kazunari Koga , Tatsuya Hirata , Hiroki Nagasaki
发明人： Syouji Tanaka , Ryohei Miyagawa , Kazunari Koga , Tatsuya Hirata , Hiroki Nagasaki
IPC分类号： H01L31/113 , H01L21/00
CPC分类号： H01L27/14643 , H01L27/14632 , H01L27/14687 , H01L27/14689 , H01L31/035236
摘要： An object of the present invention is to provide a solid-state imaging device which can increase the amount of signal charge accumulation in a photodiode, and a manufacturing method thereof. The solid-state imaging device according to the present invention includes: a gate electrode formed on a p-type semiconductor substrate; an n-type signal accumulation region which accumulates the signal charge obtained through a photo-electrical conversion, and is formed in the semiconductor substrate so that a portion of the signal accumulation region is positioned below the gate electrode; an n-type drain region which is positioned in the semiconductor substrate so that the n-type drain region is positioned opposite the signal accumulation region across the gate electrode; and a p-type punch-through stopper region which has a higher impurity concentration than the semiconductor substrate, and is formed in the semiconductor substrate so that the p-type punch-through region is positioned below the drain region, wherein an end of the punch-through stopper region is positioned closer to the signal accumulation region than the end of the drain region.
摘要翻译：本发明的目的是提供一种能够增加光电二极管中的信号电荷积聚量的固态成像装置及其制造方法。根据本发明的固态成像装置包括：形成在p型半导体衬底上的栅电极; 累积通过光电转换获得的信号电荷的n型信号存储区域，并形成在半导体衬底中，使得信号存储区域的一部分位于栅电极下方; 位于所述半导体衬底中的n型漏极区，使得所述n型漏极区域与所述栅电极相交的所述信号聚集区域相对; 以及具有比半导体衬底更高的杂质浓度的p型穿通止挡区域，并且形成在半导体衬底中，使得p型穿通区域位于漏极区域的下方，其中，穿通停止区域比漏极区域的端部更靠近信号聚集区域。

3. 发明授权

US07358475B2 Solid-state imaging device and camera 有权
标题翻译：固态成像装置和相机
公开(公告)号：US07358475B2
公开(公告)日：2008-04-15
申请号：US10916590
申请日：2004-08-12
申请人： Syouji Tanaka , Ryohei Miyagawa , Toshiya Fujii , Yasuhiro Tanaka , Michihiro Yamagata , Hiroaki Okayama
发明人： Syouji Tanaka , Ryohei Miyagawa , Toshiya Fujii , Yasuhiro Tanaka , Michihiro Yamagata , Hiroaki Okayama
IPC分类号： H01L27/00 , H04N5/225
CPC分类号： H01L27/14601 , H01L27/14603 , H01L27/14605 , H01L27/14625 , H01L27/14627 , H01L27/14685
摘要： A solid-state imaging device includes pixels 2 arranged two-dimensionally on a semiconductor substrate 1. In a predetermined area in each pixel is formed a light-sensitive area 3 for receiving incident light 11, and each pixel includes a photoelectric conversion portion 4 for converting the incident light into a signal charge. In at least some of the pixels, the center of the light-sensitive area is offset from the center of the pixel when seen from directly above a principal surface of the semiconductor substrate. Each pixel further includes a light-path change member 12a and 12b for deflecting incident light traveling toward the center of the pixel so as to be directed toward the center of the light-sensitive area. Thus, a solid-state imaging device simultaneously realizing the miniaturization of pixels and a high image quality is provided.
摘要翻译：固体摄像器件包括二维布置在半导体衬底1上的像素2。在每个像素中的预定区域中形成有用于接收入射光11的感光区域3，并且每个像素包括用于将入射光转换成信号电荷的光电转换部分4。在至少一些像素中，当从半导体衬底的主表面的正上方观察时，感光区域的中心偏离像素的中心。每个像素还包括光路改变构件12a和12b，用于偏转朝向像素的中心行进的入射光，以便朝向感光区域的中心。因此，提供了同时实现像素的小型化和高图像质量的固态成像装置。

4. 发明申请

US20050161584A1 Solid-state imaging device and camera 有权
标题翻译：固态成像装置和相机
公开(公告)号：US20050161584A1
公开(公告)日：2005-07-28
申请号：US10916590
申请日：2004-08-12
申请人： Syouji Tanaka , Ryohei Miyagawa , Toshiya Fujii , Yasuhiro Tanaka , Michihiro Yamagata , Hiroaki Okayama
发明人： Syouji Tanaka , Ryohei Miyagawa , Toshiya Fujii , Yasuhiro Tanaka , Michihiro Yamagata , Hiroaki Okayama
IPC分类号： G02B3/00 , H01L27/14 , H01L27/146 , H01L31/0232 , H01L31/10 , H04N5/335 , H04N5/361 , H04N5/369 , H04N5/372 , H04N5/374 , H01L27/00 , G11B7/135
CPC分类号： H01L27/14601 , H01L27/14603 , H01L27/14605 , H01L27/14625 , H01L27/14627 , H01L27/14685
摘要： A solid-state imaging device includes pixels 2 arranged two-dimensionally on a semiconductor substrate 1. In a predetermined area in each pixel is formed a light-sensitive area 3 for receiving incident light 11, and each pixel includes a photoelectric conversion portion 4 for converting the incident light into a signal charge. In at least some of the pixels, the center of the light-sensitive area is offset from the center of the pixel when seen from directly above a principal surface of the semiconductor substrate. Each pixel further includes a light-path change member 12a and 12b for deflecting incident light traveling toward the center of the pixel so as to be directed toward the center of the light-sensitive area. Thus, a solid-state imaging device simultaneously realizing the miniaturization of pixels and a high image quality is provided.
摘要翻译：固体摄像器件包括二维布置在半导体衬底1上的像素2。在每个像素中的预定区域中形成有用于接收入射光11的感光区域3，并且每个像素包括用于将入射光转换成信号电荷的光电转换部分4。在至少一些像素中，当从半导体衬底的主表面的正上方观察时，感光区域的中心偏离像素的中心。每个像素还包括光路改变构件12a和12b，用于偏转朝向像素的中心行进的入射光，以便朝向感光区域的中心。因此，提供了同时实现像素的小型化和高图像质量的固态成像装置。

5. 发明授权

US07358105B2 Solid-state imaging device, method for manufacturing the same and interline transfer CCD image sensor 有权
标题翻译：固态成像装置及其制造方法和行间传输CCD图像传感器
公开(公告)号：US07358105B2
公开(公告)日：2008-04-15
申请号：US11292835
申请日：2005-12-02
申请人： Hiroki Nagasaki , Syouji Tanaka , Yoshiyuki Matsunaga
发明人： Hiroki Nagasaki , Syouji Tanaka , Yoshiyuki Matsunaga
IPC分类号： H01L21/00
CPC分类号： H01L27/14609 , H01L21/76237 , H01L27/1463 , H01L27/14643 , H01L27/14806 , H01L27/14843
摘要： A high-performance solid-state imaging device is provided. The solid-state imaging device includes: a plurality of pixel cells; and a driving unit. Each of the plurality of pixel cells includes: a photodiode that converts incident light into a signal charge and stores the signal charge; a MOS transistor that is provided for reading out the signal charge stored in the photodiode; an element isolation portion that is formed of a STI that is a grooved portion of the semiconductor substrate so that the photodiode and the MOS transistor are isolated from each other; and a deep-portion isolation implantation layer that is formed under the element isolation portion for preventing a flow of a charge from the photodiode to the MOS transistor.
摘要翻译：提供了一种高性能固态成像装置。固态成像装置包括：多个像素单元; 和驱动单元。多个像素单元中的每一个包括：将入射光转换为信号电荷并存储信号电荷的光电二极管; 提供用于读出存储在光电二极管中的信号电荷的MOS晶体管; 元件隔离部分，其由作为半导体衬底的沟槽部分的STI形成，使得光电二极管和MOS晶体管彼此隔离; 以及形成在元件隔离部分下方的用于防止电荷从光电二极管流向MOS晶体管的深部隔离注入层。

6. 发明申请

US20050253214A1 Solid-state imaging device 审中-公开
标题翻译：固态成像装置
公开(公告)号：US20050253214A1
公开(公告)日：2005-11-17
申请号：US11039782
申请日：2005-01-24
申请人： Hiroki Nagasaki , Syouji Tanaka
发明人： Hiroki Nagasaki , Syouji Tanaka
IPC分类号： H01L27/146 , H01L27/14 , H01L31/0352 , H01L31/06 , H04N5/335 , H04N5/369 , H04N5/374
CPC分类号： H01L27/1463 , H01L27/14603 , H01L27/14643 , H01L27/14689 , H01L31/035272
摘要： Photodiodes 20a and 20b are formed in the main surface of the semiconductor substrate 10. The photodiode 20a includes a P+-type surface layer 22a and a charge accumulating portion 21a, and the photodiode 20b includes a P+-type surface layer 22b and a charge accumulating portion 21b. The photodiodes 20a and 20b are separated by an element isolating portion 33a having an STI structure. The bottom portions of the charge accumulating portions 21a and 21b constituting the photodiodes 20a and 20b are located in a deeper position from the main surface of the semiconductor substrate 10 than the bottom portions of the element isolating portion 33a. Thus, a solid-state imaging device in which color mixing can be prevented and the capacity of the charge accumulating portions is large, and the sensitivity and the saturation characteristics are excellent can be provided.
摘要翻译：光电二极管20a和20b形成在半导体衬底10的主表面中。光电二极管20a包括P + H +型表面层21a和电荷累积部分21a，以及光电二极管 20b包括P + H +型表面层22b和电荷累积部分21b。光电二极管20a和20b由具有STI结构的元件隔离部分33a分开。构成光电二极管20a和20b的电荷累积部分21a和21b的底部位于比半导体衬底10的主表面比元件隔离部分33a的底部更深的位置。因此，可以提供其中可以防止混色并且电荷累积部分的容量大的固态成像装置，并且可以提供灵敏度和饱和特性优异的固态成像装置。

7. 发明授权

US07157754B2 Solid-state imaging device and interline transfer CCD image sensor 有权
标题翻译：固态成像装置和行间传输CCD图像传感器
公开(公告)号：US07157754B2
公开(公告)日：2007-01-02
申请号：US10742419
申请日：2003-12-19
申请人： Hiroki Nagasaki , Syouji Tanaka , Yoshiyuki Matsunaga
发明人： Hiroki Nagasaki , Syouji Tanaka , Yoshiyuki Matsunaga
IPC分类号： H01L27/148
CPC分类号： H01L27/14609 , H01L21/76237 , H01L27/1463 , H01L27/14643 , H01L27/14806 , H01L27/14843
摘要： A high-performance solid-state imaging device is provided. The solid-state imaging device includes: a plurality of pixel cells; and a driving unit. Each of the plurality of pixel cells includes: a photodiode that converts incident light into a signal charge and stores the signal charge; a MOS transistor that is provided for reading out the signal charge stored in the photodiode; an element isolation portion that is formed of a STI that is a grooved portion of the semiconductor substrate so that the photodiode and the MOS transistor are isolated from each other; and a deep-portion isolation implantation layer that is formed under the element isolation portion for preventing a flow of a charge from the photodiode to the MOS transistor.
摘要翻译：提供了一种高性能固态成像装置。固态成像装置包括：多个像素单元; 和驱动单元。多个像素单元中的每一个包括：将入射光转换为信号电荷并存储信号电荷的光电二极管; 提供用于读出存储在光电二极管中的信号电荷的MOS晶体管; 元件隔离部分，其由作为半导体衬底的沟槽部分的STI形成，使得光电二极管和MOS晶体管彼此隔离; 以及形成在元件隔离部分下方的用于防止电荷从光电二极管流到MOS晶体管的深部分隔离注入层。

8. 发明申请

US20060076582A1 Solid-state imaging device, method for manufacturing the same and interline transfer CCD image sensor 有权
标题翻译：固态成像装置及其制造方法和行间传输CCD图像传感器
公开(公告)号：US20060076582A1
公开(公告)日：2006-04-13
申请号：US11292835
申请日：2005-12-02
申请人： Hiroki Nagasaki , Syouji Tanaka , Yoshiyuki Matsunaga
发明人： Hiroki Nagasaki , Syouji Tanaka , Yoshiyuki Matsunaga
IPC分类号： H01L29/768
CPC分类号： H01L27/14609 , H01L21/76237 , H01L27/1463 , H01L27/14643 , H01L27/14806 , H01L27/14843
摘要： A high-performance solid-state imaging device is provided. The solid-state imaging device includes: a plurality of pixel cells; and a driving unit. Each of the plurality of pixel cells includes: a photodiode that converts incident light into a signal charge and stores the signal charge; a MOS transistor that is provided for reading out the signal charge stored in the photodiode; an element isolation portion that is formed of a STI that is a grooved portion of the semiconductor substrate so that the photodiode and the MOS transistor are isolated from each other; and a deep-portion isolation implantation layer that is formed under the element isolation portion for preventing a flow of a charge from the photodiode to the MOS transistor.
摘要翻译：提供了一种高性能固态成像装置。固态成像装置包括：多个像素单元; 和驱动单元。多个像素单元中的每一个包括：将入射光转换为信号电荷并存储信号电荷的光电二极管; 提供用于读出存储在光电二极管中的信号电荷的MOS晶体管; 元件隔离部分，其由作为半导体衬底的沟槽部分的STI形成，使得光电二极管和MOS晶体管彼此隔离; 以及形成在元件隔离部分下方的用于防止电荷从光电二极管流向MOS晶体管的深部隔离注入层。

9. 发明授权

US6166405A Solid-state imaging device 有权
标题翻译：固态成像装置
公开(公告)号：US6166405A
公开(公告)日：2000-12-26
申请号：US295061
申请日：1999-04-20
申请人： Toshihiro Kuriyama , Syouji Tanaka
发明人： Toshihiro Kuriyama , Syouji Tanaka
IPC分类号： H01L27/146 , H04N5/335 , H04N5/369 , H04N5/374 , H01L31/062 , H01L29/04 , H01L31/036 , H01L31/113
CPC分类号： H01L27/14689 , H01L27/14609 , H01L27/1462 , H01L27/14643
摘要： A solid-state imaging device comprises a plurality of pixels, each pixel comprising a semiconductor substrate; a photo-receiving portion formed in the semiconductor substrate; a detecting region formed in the semiconductor substrate; an insulating film formed on the semiconductor substrate, a gate electrode formed on the insulating film above the region between the photo-receiving portion and the detecting region; and a read-out circuit, which is electrically connected to the detecting portion. A reflection reducing film is formed on the insulating film above the region including at least one part of the photo-receiving portion and excluding at least one part of the detecting portion in the semiconductor substrate. With this solid-state imaging device and with the method for manufacturing the same, a highly sensitive MOS solid-state imaging device and the method for manufacturing the same are provided.
摘要翻译：固态成像装置包括多个像素，每个像素包括半导体衬底; 形成在所述半导体衬底中的光接收部分; 形成在所述半导体衬底中的检测区域; 形成在所述半导体衬底上的绝缘膜，在所述光接收部分和所述检测区域之间的区域上方的所述绝缘膜上形成的栅电极; 以及电连接到检测部的读出电路。在包括光接收部分的至少一部分并且不包括半导体衬底中的检测部分的至少一部分的区域之上的绝缘膜上形成反射降低膜。利用该固态成像装置及其制造方法，提供了高灵敏度的MOS固态成像装置及其制造方法。

10. 发明授权

US5598716A Ice thermal storage refrigerator unit 失效
标题翻译：冰蓄冷冰箱单元
公开(公告)号：US5598716A
公开(公告)日：1997-02-04
申请号：US501788
申请日：1995-07-13
申请人： Syouji Tanaka , Naoyuki Inoue , Kyoichi Katoh
发明人： Syouji Tanaka , Naoyuki Inoue , Kyoichi Katoh
IPC分类号： F24F5/00 , F25D16/00 , F25D17/02
CPC分类号： F25D16/00 , F25D17/02
摘要： An ice thermal storage refrigerator unit includes a brine path consisting essentially of a refrigerator, an ice thermal storage tank, a water heat exchanger, a brine pump, and control valves, which are connected by piping, and a cold water path consisting essentially of the water heat exchanger, a cooling load, and a cold water pump, which are connected by piping, so that brine is cooled in the refrigerator, and water in the ice thermal storage tank is frozen by the brine, thereby storing heat, and when heat is to be discharged, the brine is cooled by heat of fusion of the ice in the ice thermal storage tank, and the brine is introduced into the water heat exchanger to cool cold water, thereby taking out a cooling capacity. The ice thermal storage refrigerator unit further includes apparatus for detecting a quantity of stored heat remaining in the ice thermal storage tank and apparatus for detecting a quantity of heat discharged from the ice thermal storage tank in order to calculate an allowable discharging heat quantity from the quantity of stored heat remaining in the ice thermal storage tank, thereby providing an energy-saving and low-cost ice thermal storage refrigerator unit which enables a thermal storage tank to be effectively used to the full extent by adding only a simple measuring instrument.
摘要翻译：冰蓄冷式冰箱单元包括基本上由冰箱，冰蓄热箱，水热交换器，盐水泵和控制阀组成的盐水通道，其通过管道连接，冷水路径基本上由水热交换器，冷却负载和冷水泵，其通过管道连接，使得在冰箱中冷却盐水，冰蓄热箱中的水被盐水冻结，从而储存热量，当加热要排出，盐水通过冰储存罐中的冰的融合热而被冷却，盐水被引入水热交换器以冷却冷水，从而取出冷却能力。冰蓄冷式冰箱单元还包括用于检测冰蓄热箱中剩余的积存量的装置和用于检测从冰蓄热箱排出的热量的装置，以便从该数量计算允许排放热量存储在冰蓄热箱中的热量，从而提供一种节能和低成本的冰蓄冷式冰箱单元，其通过仅添加简单的测量仪器能够在全部程度上有效地使用蓄热箱。

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