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    • 14. 发明授权
    • Method and apparatus for the inspection of defects
    • 用于检查缺陷的方法和装置
    • US5293538A
    • 1994-03-08
    • US705537
    • 1991-05-24
    • Hisafumi IwataYukio MatsuyamaHitoshi Kubota
    • Hisafumi IwataYukio MatsuyamaHitoshi Kubota
    • G01N21/88G01N21/95G01N21/956G01N21/47
    • G01N21/8806G01N21/956G01N2021/8427G01N2021/8825
    • A defect inspection method and apparatus detect a defect which exists on the surface of a protection layer or a defect which exists in the protection layer and scatters the light on its surface, through the detection of the light which is derived from an illumination light and reflected on the protection layer surface and the light which is derived from a slit-formed illumination light and scattered in the area between the position where the light is incident to the transparent protection layer and the position where the surface of an element underneath the transparent protection layer is illuminated. An image process, which images two elements having the same appearance and compares the images, thereby to reduce inconsistent components emerging in portions other than a defective portion, is conducted through imaging under the bright field illumination and bright/dark field combined illumination, and the images are rendered the minimum filtering process based on 3-by-3 pixels and the defect judgement process based on comparison.
    • 缺陷检查方法和装置通过检测从照明光导出的光并检测出存在于保护层的表面上的缺陷或者存在于保护层中的缺陷并将光散射在其表面上 在保护层表面上和由狭缝形成的照明光导出并散射在光入射到透明保护层的位置和透明保护层下面的元件表面之间的区域中的光 被照亮。 一种图像处理,其对具有相同外观的两个元件进行图像比较,从而减少在缺陷部分以外的部分中出现的不一致的成分,通过在明场照明和亮/暗场组合照明下的成像进行,并且 基于3×3像素的图像被渲染为最小滤波处理,并且基于比较的缺陷判断处理。
    • 20. 发明授权
    • Inspection system and semiconductor device manufacturing method
    • 检测系统和半导体器件制造方法
    • US06775817B2
    • 2004-08-10
    • US10004168
    • 2001-10-30
    • Makoto OnoHisafumi IwataKeiko Kirino
    • Makoto OnoHisafumi IwataKeiko Kirino
    • G06F1750
    • H01L21/67271G01N21/9501G01N21/956H01L22/20
    • A method and system are provided for analyzing defects having the potential to become electrical failures, during the inspection of particles and/or pattern defects of a wafer used in the manufacture of electronic devices such as semiconductor integrated circuits. Defect map data is processed along with failure probability data. Next, defect-dependent failure probability calculations are made to obtain the failure probability of each defect in the defect map data. That data is then used to prepare failure-probability-added defect map data. Further, a selection process of defects to be reviewed is used to reorder and filter defects from the failure-probability-added defect map data, thus selecting one or more defects for review.
    • 提供了一种方法和系统,用于在用于制造诸如半导体集成电路的电子器件的晶片的颗粒和/或图案缺陷的检查期间分析具有变为电气故障的可能性的缺陷。 缺陷图数据与故障概率数据一起处理。 接下来,进行与缺陷相关的故障概率计算,以获得缺陷图数据中的每个缺陷的故障概率。 然后将该数据用于准备故障概率添加缺陷图数据。 此外,使用要检查的缺陷的选择处理用于从故障概率添加缺陷图数据重新排序和过滤缺陷,从而选择一个或多个缺陷以供审查。