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    • 18. 发明申请
    • SUSCEPTOR WITH BACKSIDE AREA OF CONSTANT EMISSIVITY
    • 具有不断发生的背景区域的障碍物
    • US20080274604A1
    • 2008-11-06
    • US11744760
    • 2007-05-04
    • Errol SanchezDavid CarlsonCraig Metzner
    • Errol SanchezDavid CarlsonCraig Metzner
    • H01L21/20C23C16/00
    • H01L21/68757C23C16/4581C23C16/481C23C16/52
    • Methods and apparatus for providing constant emissivity of the backside of susceptors are provided. Provided is a susceptor comprising: a susceptor plate having a surface for supporting a wafer and a backside surface opposite the wafer supporting surface; a layer comprising an oxide, a nitride, an oxynitride, or combinations thereof located on the backside surface of the susceptor plate, the layer being stable in the presence of a reactive process gas. The layer comprises, for example, silicon dioxide, silicon nitride, silicon oxynitride, or combinations thereof. Also provided is a method comprising: providing a susceptor in a deposition chamber, the susceptor comprising a susceptor plate and a layer comprising an oxide, a nitride, an oxynitride, or combinations thereof, the layer being stable in the presence of the reactive process gases; locating the wafer on a support surface of the susceptor plate. The method can further comprises selectively depositing an epitaxial layer or a non-epitaxial layer on a surface of the wafer. The method further comprises selectively etching to maintain the oxide, nitride, oxynitride, or combinations thereof layer.
    • 提供了用于提供感受器背面恒定发射率的方法和装置。 本发明提供一种基座,其特征在于,包括:具有用于支撑晶片的表面的基座板和与所述晶片支撑面相对的背面; 位于基座板的背面上的包含氧化物,氮化物,氧氮化物或其组合的层,该层在反应性工艺气体存在下是稳定的。 该层包括例如二氧化硅,氮化硅,氮氧化硅或其组合。 还提供了一种方法,其包括:在沉积室中提供感受器,所述基座包括基座板和包含氧化物,氮化物,氧氮化物或其组合的层,所述层在反应性工艺气体存在下是稳定的 ; 将晶片定位在基座板的支撑表面上。 该方法还可以包括在晶片的表面上选择性地沉积外延层或非外延层。 该方法还包括选择性蚀刻以维持氧化物,氮化物,氧氮化物或其组合层。