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11. 发明申请

US20100167503A1 Methods and systems of transferring, docking and processing substrates 有权
标题翻译：转移，对接和处理基材的方法和系统
公开(公告)号：US20100167503A1
公开(公告)日：2010-07-01
申请号：US12319231
申请日：2008-12-31
申请人： Lawrence Chung-Lai Lei , Alfred Mak , Rex Liu , Kon Park , Samuel S. Pak , Tzy-Chung Terry Wu , Simon Zhu , Ronald L. Rose , Gene Shin , Xiaoming Wang
发明人： Lawrence Chung-Lai Lei , Alfred Mak , Rex Liu , Kon Park , Samuel S. Pak , Tzy-Chung Terry Wu , Simon Zhu , Ronald L. Rose , Gene Shin , Xiaoming Wang
IPC分类号： H01L21/677 , H01L21/36 , H01L21/673
CPC分类号： H01L21/67173 , H01L21/6719 , H01L21/67706 , H01L21/67712 , H01L21/67727 , H01L21/67736 , H01L21/67748 , Y10S414/135
摘要： In accordance with some embodiments described herein, a method for transferring a substrate to two or more process modules is provided, comprising loading at least one substrate into one or more mobile transverse chambers, the mobile transverse chambers being carried on a rail positioned adjacent to the two or more process modules, and wherein each mobile transverse chamber is configured to maintain a specified gas condition during conveyance of the substrate. One or more drive systems are actuated to propel at least one of the one or more mobile transverse chambers along the rail. The at least one mobile transfer chamber docks to at least one of the process modules, and the substrate is conveyed from the mobile transverse chamber to the at least one process modules.
摘要翻译：根据本文描述的一些实施例，提供了一种用于将衬底转移到两个或更多个工艺模块的方法，包括将至少一个衬底加载到一个或多个移动横向室中，所述移动横向室承载在邻近两个或更多个处理模块，并且其中每个移动横向室被构造成在输送基板期间保持特定的气体状态。一个或多个驱动系统被致动以沿着轨道推进一个或多个移动横向室中的至少一个。所述至少一个移动传送室与所述处理模块中的至少一个对接，并且所述基板从所述移动横向室传送到所述至少一个处理模块。

12. 发明授权

US07705275B2 Substrate support having brazed plates and resistance heater 有权
标题翻译：具有钎焊板和电阻加热器的基板支撑
公开(公告)号：US07705275B2
公开(公告)日：2010-04-27
申请号：US11506460
申请日：2006-08-17
申请人： Salvador P. Umotoy , Lawrence Chung-Lai Lei , Gwo-chun Tzu , Xiangxiong (John) Yuan , Michael S. Jackson , Hymam Lam
发明人： Salvador P. Umotoy , Lawrence Chung-Lai Lei , Gwo-chun Tzu , Xiangxiong (John) Yuan , Michael S. Jackson , Hymam Lam
IPC分类号： A21B1/22
CPC分类号： H01L21/67103 , C23C16/45521 , C23C16/4586 , C23C16/466 , H01L21/6838 , H01L21/68735 , H01L21/6875 , H01L21/68785
摘要： A substrate support comprises top, middle and bottom plates which are brazed together. The top plate has a top surface with a plurality of outwardly projecting mesas dispersed across a recessed pocket, a network of recessed grooves, a vacuum port terminating in the recessed grooves, and plurality of gas ports. The middle plate has a plurality of middle feedthroughs aligned to corresponding top feedthroughs of the top plate, and the bottom plate has a plurality of bottom feedthroughs aligned to the middle feedthroughs of the middle plate. The top and middle plates are joined by a first brazed bond layer and the middle and bottom plates are joined by a second brazed bond layer.
摘要翻译：衬底支撑件包括钎焊在一起的顶板，中板和底板。顶板具有顶表面，多个向外突出的台面分散在凹槽中，凹槽网络，终止于凹槽中的真空端口以及多个气体端口。中间板具有与顶板的相应的顶部馈通对准的多个中间馈通，并且底板具有与中间板的中间馈通对准的多个底部馈通。顶板和中间板通过第一钎焊接合层连接，中间和底板通过第二钎焊接合层连接。

13. 发明授权

US07660644B2 Atomic layer deposition apparatus 有权
标题翻译：原子层沉积装置
公开(公告)号：US07660644B2
公开(公告)日：2010-02-09
申请号：US11423535
申请日：2006-06-12
申请人： Barry L. Chin , Alfred W. Mak , Lawrence Chung-Lai Lei , Ming Xi , Hua Chung , Ken Kaung Lai , Jeong Soo Byun
发明人： Barry L. Chin , Alfred W. Mak , Lawrence Chung-Lai Lei , Ming Xi , Hua Chung , Ken Kaung Lai , Jeong Soo Byun
IPC分类号： G06F19/00
CPC分类号： C23C16/45544 , C23C16/45525 , C23C16/45548 , C23C16/45551 , C23C16/4583
摘要： A method and apparatus for atomic layer deposition (ALD) is described. The apparatus comprises a deposition chamber and a wafer support. The deposition chamber is divided into two or more deposition regions that are integrally connected one to another. The wafer support is movable between the two or more interconnected deposition regions within the deposition chamber.
摘要翻译：描述了用于原子层沉积（ALD）的方法和装置。该装置包括沉积室和晶片支架。沉积室被分成两个或更多个彼此一体地连接的沉积区域。晶片支撑件可在沉积室内的两个或更多互连的沉积区域之间移动。

14. 发明授权

US07465666B2 Method for forming tungsten materials during vapor deposition processes 有权
标题翻译：在气相沉积工艺中形成钨材料的方法
公开(公告)号：US07465666B2
公开(公告)日：2008-12-16
申请号：US11766121
申请日：2007-06-21
申请人： Moris Kori , Alfred W. Mak , Jeong Soo Byun , Lawrence Chung-Lai Lei , Hua Chung , Ashok Sinha , Ming Xi
发明人： Moris Kori , Alfred W. Mak , Jeong Soo Byun , Lawrence Chung-Lai Lei , Hua Chung , Ashok Sinha , Ming Xi
IPC分类号： H01L21/44
CPC分类号： H01L21/76838 , C23C16/0272 , C23C16/14 , C23C16/4401 , C23C16/45525 , C23C16/45527 , C23C16/45529 , C23C16/45534 , C23C16/45561 , C30B25/02 , C30B25/14 , C30B29/38 , H01L21/28556 , H01L21/28562 , H01L21/76843 , H01L21/76876 , H01L21/76877
摘要： In one embodiment, a method for forming a tungsten material on a substrate surface is provide which includes positioning a substrate within a deposition chamber, heating the substrate to a deposition temperature, and exposing the substrate sequentially to diborane and a tungsten precursor gas to form a tungsten nucleation layer on the substrate during an atomic layer deposition (ALD) process. The method further provides exposing the substrate to a deposition gas comprising hydrogen gas and the tungsten precursor gas to form a tungsten bulk layer over the tungsten nucleation layer during a chemical vapor deposition (CVD) process. Examples are provided which include ALD and CVD processes that may be conducted in the same deposition chamber or in different deposition chambers.
摘要翻译：在一个实施例中，提供了一种在衬底表面上形成钨材料的方法，其包括将衬底定位在沉积室内，将衬底加热到沉积温度，并将衬底依次暴露于乙硼烷和钨前体气体，以形成在原子层沉积（ALD）过程中在基底上形成钨成核层。该方法进一步提供将衬底暴露于包含氢气和钨前体气体的沉积气体，以在化学气相沉积（CVD）工艺期间在钨成核层上形成钨体层。提供了包括可以在相同沉积室或不同沉积室中进行的ALD和CVD工艺的实例。

15. 发明授权

US07235486B2 Method for forming tungsten materials during vapor deposition processes 有权
标题翻译：在气相沉积工艺中形成钨材料的方法
公开(公告)号：US07235486B2
公开(公告)日：2007-06-26
申请号：US11468156
申请日：2006-08-29
申请人： Moris Kori , Alfred W. Mak , Jeong Soo Byun , Lawrence Chung-Lai Lei , Hua Chung , Ashok Sinha , Ming Xi
发明人： Moris Kori , Alfred W. Mak , Jeong Soo Byun , Lawrence Chung-Lai Lei , Hua Chung , Ashok Sinha , Ming Xi
IPC分类号： H01L21/44
CPC分类号： H01L21/76838 , C23C16/0272 , C23C16/14 , C23C16/4401 , C23C16/45525 , C23C16/45527 , C23C16/45529 , C23C16/45534 , C23C16/45561 , C30B25/02 , C30B25/14 , C30B29/38 , H01L21/28556 , H01L21/28562 , H01L21/76843 , H01L21/76876 , H01L21/76877
摘要： In one embodiment, a method for forming a tungsten material on a substrate surface is provide which includes positioning a substrate within a deposition chamber, heating the substrate to a deposition temperature, and exposing the substrate sequentially to a first reducing gas and a tungsten precursor gas to form a tungsten nucleation layer on the substrate during an atomic layer deposition (ALD) process. The method may further provide exposing the substrate to a deposition gas comprising a second reducing gas and the tungsten precursor gas to form a tungsten bulk layer on the tungsten nucleation layer during a chemical vapor deposition (CVD) process. Examples include that the ALD and CVD processes are conducted in the same deposition chamber or in different deposition chambers.
摘要翻译：在一个实施例中，提供了一种在衬底表面上形成钨材料的方法，其包括将衬底定位在沉积室内，将衬底加热至沉积温度，并将衬底依次暴露于第一还原气体和钨前体气体以在原子层沉积（ALD）工艺期间在衬底上形成钨成核层。该方法可以进一步提供将衬底暴露于包含第二还原气体和钨前体气体的沉积气体，以在化学气相沉积（CVD）工艺期间在钨成核层上形成钨体层。实例包括ALD和CVD工艺在相同的沉积室或不同的沉积室中进行。

16. 发明授权

US06603269B1 Resonant chamber applicator for remote plasma source 失效
标题翻译：用于远程等离子体源的谐振室施加器
公开(公告)号：US06603269B1
公开(公告)日：2003-08-05
申请号：US09593586
申请日：2000-06-13
申请人： Be Van Vo , Salvador P. Umotoy , Son N. Trinh , Lawrence Chung-Lai Lei , Sergio Edelstein , Avi Tepman , Chien-Teh Kao , Kenneth Tsai
发明人： Be Van Vo , Salvador P. Umotoy , Son N. Trinh , Lawrence Chung-Lai Lei , Sergio Edelstein , Avi Tepman , Chien-Teh Kao , Kenneth Tsai
IPC分类号： C23C1600
CPC分类号： H01J37/32192
摘要： An improved plasma applicator for remotely generating a plasma for use in semiconductor manufacturing is provided. In one embodiment, a plasma applicator is comprised of a chamber assembly, a removable waveguide adapter and a circular clamp which secures the adapter to the chamber assembly. The chamber assembly includes an aperture plate, a microwave transparent window, a chamber body and a microwave sensor which is mounted on the chamber body. The chamber body has a proximate end opening adapted to admit microwave energy into the cavity and a distal end disposed generally on the opposite side of the cavity from the proximate end opening. The chamber body further has a gas outlet port adapted to permit the flow of an excited gas out of the cavity and a gas inlet port adapted to admit a precursor gas into the cavity. The gas inlet port has a center axis which is disposed between the proximate end opening of the chamber body and the midpoint between the proximate end opening and the distal end of the body.
摘要翻译：提供了用于远程产生用于半导体制造的等离子体的改进的等离子体施加器。在一个实施例中，等离子体施加器由腔室组件，可移除波导适配器和将适配器固定到腔室组件的圆形夹具构成。腔室组件包括孔板，微波透明窗，室主体和安装在腔体上的微波传感器。室主体具有适于将微波能量引入空腔中的近端开口，以及大致位于与近端开口相反的空腔相对侧的远端。腔体还具有气体出口端口，其适于允许将激发气体流出空腔，气体入口端口适于将前体气体引入空腔。气体入口具有中心轴线，该中心轴线设置在腔室主体的近端开口和本体的近端开口和远端之间的中点之间。

17. 发明授权

US06551929B1 Bifurcated deposition process for depositing refractory metal layers employing atomic layer deposition and chemical vapor deposition techniques 有权
$Bifurcated deposition process for depositing refractory metal layers employing atomic layer deposition and chemical vapor deposition techniques$
标题翻译：使用原子层沉积和化学气相沉积技术沉积难熔金属层的分叉沉积工艺
公开(公告)号：US06551929B1
公开(公告)日：2003-04-22
申请号：US09605593
申请日：2000-06-28
申请人： Moris Kori , Alfred W. Mak , Jeong Soo Byun , Lawrence Chung-Lai Lei , Hua Chung , Ashok Sinha , Ming Xi
发明人： Moris Kori , Alfred W. Mak , Jeong Soo Byun , Lawrence Chung-Lai Lei , Hua Chung , Ashok Sinha , Ming Xi
IPC分类号： H01L2144
CPC分类号： H01L21/76838 , C23C16/0272 , C23C16/14 , C23C16/4401 , C23C16/45525 , C23C16/45527 , C23C16/45529 , C23C16/45534 , C23C16/45561 , C30B25/02 , C30B25/14 , C30B29/38 , H01L21/28556 , H01L21/28562 , H01L21/76843 , H01L21/76876 , H01L21/76877
摘要： A method and system to form a refractory metal layer on a substrate features a bifurcated deposition process that includes nucleating a substrate using ALD techniques to serially expose the substrate to first and second reactive gases followed forming a bulk layer, adjacent to the nucleating layer, using CVD techniques to concurrently exposing the nucleation layer to the first and second gases.
摘要翻译：在衬底上形成难熔金属层的方法和系统具有分叉沉积工艺，其包括使用ALD技术使衬底成核，以将衬底串行地暴露于第一和第二反应气体，然后使用邻近成核层的本体层，使用同时将成核层暴露于第一和第二气体的CVD技术。

18. 发明授权

US06206971B1 Integrated temperature controlled exhaust and cold trap assembly 有权
标题翻译：集成温度控制排气和冷阱组件
公开(公告)号：US06206971B1
公开(公告)日：2001-03-27
申请号：US09281998
申请日：1999-03-29
申请人： Salvador P. Umotoy , Lawrence Chung-Lai Lei , Russell C. Ellwanger , Ronald L. Rose , Joel Huston , James Jin-Long Chen
发明人： Salvador P. Umotoy , Lawrence Chung-Lai Lei , Russell C. Ellwanger , Ronald L. Rose , Joel Huston , James Jin-Long Chen
IPC分类号： C23C1600
CPC分类号： B01D8/00 , C23C16/4412 , Y10S55/15 , Y10S55/30
摘要： A temperature-controlled exhaust assembly with cold trap capability. One embodiment of the exhaust assembly comprises a multi-heater design which allows for independent multi-zone closed-loop temperature control. Another embodiment comprises a compact multi-valve uni-body design incorporating a single heater for simplified closed-loop temperature control. The cold trap incorporates a heater for temperature control at the inlet of the trap to minimize undesirable deposits. One embodiment also comprises a multi-stage cold trap and a particle trap. As a removable unit, this cold trap provides additional safety in the handling and disposal of the adsorbed condensables.
摘要翻译：具有冷阱能力的温度控制排气组件。排气组件的一个实施例包括允许独立的多区域闭环温度控制的多加热器设计。另一个实施例包括紧凑的多阀单体设计，其包括用于简化闭环温度控制的单个加热器。冷阱包含一个加热器，用于在陷阱入口进行温度控制，以尽量减少不必要的沉积物。一个实施例还包括多级冷阱和颗粒捕集器。作为可拆卸单元，该冷阱在吸附的可冷凝物的处理和处理中提供了额外的安全性。

19. 发明授权

US6103014A Chemical vapor deposition chamber 失效
标题翻译：化学气相沉积室
公开(公告)号：US6103014A
公开(公告)日：2000-08-15
申请号：US605809
申请日：1996-02-23
申请人： Lawrence Chung-Lai Lei , Ilya Perlov , Karl Anthony Littau , Alan Ferris Morrison , Mei Chang , Ashok K. Sinha
发明人： Lawrence Chung-Lai Lei , Ilya Perlov , Karl Anthony Littau , Alan Ferris Morrison , Mei Chang , Ashok K. Sinha
IPC分类号： C23C16/44 , C23C16/455 , C23C16/458 , C23C16/46 , H01L21/00 , H01L21/68 , H01L21/687 , C23C16/00
CPC分类号： C23C16/45519 , C23C16/4412 , C23C16/45521 , C23C16/458 , C23C16/4583 , C23C16/4585 , C23C16/46 , H01L21/67103 , H01L21/68 , H01L21/68721 , H01L21/68728 , H01L21/68735 , H01L21/6875 , H01L21/68785 , H01L21/68792 , Y10S438/935
摘要： Vacuum CVD chambers are disclosed which provide a more uniformly deposited thin film on a substrate. The chamber susceptor mount for the substrate is heated resistively with a single coil firmly contacting the metal of the susceptor on all sides, providing uniform temperatures across the susceptor mount for a substrate. A purge gas line is connected to openings in the susceptor outside of the periphery of the substrate to prevent edge and backside contamination of the substrate. A vacuum feed line mounts the substrate to the susceptor plate during processing. A refractory purge guide, or a plurality of placement pins, maintain a fixed gap passage for the purge gases to pass alongside the edge of the wafer and into the processing area of the chamber. An exhaust pumping plate improves the uniformity of exhaustion of spent gases from the chamber.
摘要翻译：公开了真空CVD室，其在衬底上提供更均匀地沉积的薄膜。用于衬底的腔室基座安装件被电阻加热，单个线圈在基座的所有侧面上牢固地接触基座的金属，从而在基座的基座上提供均匀的温度。吹扫气体管线连接到基座外部的基座上的开口，以防止衬底的边缘和背面污染。在加工过程中，真空进料管将基板安装到基座板上。耐火吹扫引导件或多个安置销保持固定的间隙通道，以使净化气体沿着晶片的边缘并入腔室的处理区域中。排气泵板改善了来自腔室的废气排出的均匀性。

20. 发明授权

US5856240A Chemical vapor deposition of a thin film onto a substrate 失效
标题翻译：将薄膜化学气相沉积到基底上
公开(公告)号：US5856240A
公开(公告)日：1999-01-05
申请号：US342522
申请日：1994-11-21
申请人： Ashok Sinha , Mei Chang , Ilya Perlov , Karl A. Littau , Alan F. Morrison , Lawrence Chung-Lai Lei
发明人： Ashok Sinha , Mei Chang , Ilya Perlov , Karl A. Littau , Alan F. Morrison , Lawrence Chung-Lai Lei
IPC分类号： C23C16/44 , C23C16/455 , C23C16/458 , C23C16/46 , H01L21/00 , H01L21/68 , H01L21/687 , C23C14/00
CPC分类号： C23C16/45519 , C23C16/4412 , C23C16/45521 , C23C16/458 , C23C16/4583 , C23C16/4585 , C23C16/46 , H01L21/67103 , H01L21/68 , H01L21/68721 , H01L21/68728 , H01L21/68735 , H01L21/6875 , H01L21/68785 , H01L21/68792 , Y10S438/935
摘要： Vacuum CVD chambers are disclosed which provide a more uniformly deposited thin film on a substrate. The chamber susceptor mount for the substrate is heated resistively with a single coil firmly contacting the metal of the susceptor on all sides, providing uniform temperatures across the susceptor mount for a substrate. A purge gas line is connected to openings in the susceptor outside of the periphery of the substrate to prevent edge and backside contamination of the substrate. A vacuum feed line mounts the substrate to the susceptor plate during processing. A refractory purge guide, or a plurality of placement pins, maintain a fixed gap passage for the purge gases to pass alongside the edge of the wafer and into the processing area of the chamber. An exhaust pumping plate improves the uniformity of exhaustion of spent gases from the chamber.
摘要翻译：公开了真空CVD室，其在衬底上提供更均匀地沉积的薄膜。用于衬底的腔室基座安装件被电阻加热，单个线圈在基座的所有侧面上牢固地接触基座的金属，从而在基座的基座上提供均匀的温度。吹扫气体管线连接到基座外部的基座上的开口，以防止衬底的边缘和背面污染。在加工过程中，真空进料管将基板安装到基座板上。耐火吹扫引导件或多个安置销保持固定的间隙通道，以使净化气体沿着晶片的边缘并入腔室的处理区域中。排气泵板改善了来自腔室的废气排出的均匀性。

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