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1. 发明授权

US07709385B2 Method for depositing tungsten-containing layers by vapor deposition techniques 失效
标题翻译：通过气相沉积技术沉积含钨层的方法
公开(公告)号：US07709385B2
公开(公告)日：2010-05-04
申请号：US12335976
申请日：2008-12-16
申请人： Ming Xi , Ashok Sinha , Moris Kori , Alfred W. Mak , Xinliang Lu , Ken Kaung Lai , Karl A. Littau
发明人： Ming Xi , Ashok Sinha , Moris Kori , Alfred W. Mak , Xinliang Lu , Ken Kaung Lai , Karl A. Littau
IPC分类号： H01L21/44
CPC分类号： C23C16/0272 , C23C16/34 , C23C16/45525 , C23C16/45527 , C23C16/45561 , C30B25/02 , C30B25/14 , C30B29/38 , H01L21/28562 , H01L21/76843 , H01L21/76876
摘要： In one embodiment, a method for forming a tungsten-containing material on a substrate is provided which includes forming a tungsten-containing layer by sequentially exposing a substrate to a processing gas and a tungsten-containing gas during an atomic layer deposition process, wherein the processing gas comprises a boron-containing gas and a nitrogen-containing gas, and forming a tungsten bulk layer over the tungsten-containing layer by exposing the substrate to a deposition gas comprising the tungsten-containing gas and a reactive precursor gas during a chemical vapor deposition process. In one example, the tungsten-containing layer and the tungsten bulk layer are deposited within the same processing chamber.
摘要翻译：在一个实施例中，提供了一种在基板上形成含钨材料的方法，其包括通过在原子层沉积工艺期间将衬底顺序地暴露于处理气体和含钨气体来形成含钨层，其中处理气体包括含硼气体和含氮气体，并且在化学气体中通过将衬底暴露于包含含钨气体和反应性前体气体的沉积气体而在含钨层上形成钨体层沉积工艺。在一个实例中，含钨层和钨体层沉积在相同的处理室内。

2. 发明申请

US20090156004A1 METHOD FOR FORMING TUNGSTEN MATERIALS DURING VAPOR DEPOSITION PROCESSES 有权
标题翻译：在蒸汽沉积过程中形成钨材料的方法
公开(公告)号：US20090156004A1
公开(公告)日：2009-06-18
申请号：US12335983
申请日：2008-12-16
申请人： MORIS KORI , Alfred W. Mak , Jeong Soo Byun , Lawrence Chung-Lai Lei , Hua Chung
发明人： MORIS KORI , Alfred W. Mak , Jeong Soo Byun , Lawrence Chung-Lai Lei , Hua Chung
IPC分类号： H01L21/285 , H01L21/443
CPC分类号： H01L21/76838 , C23C16/0272 , C23C16/14 , C23C16/4401 , C23C16/45525 , C23C16/45527 , C23C16/45529 , C23C16/45534 , C23C16/45561 , C30B25/02 , C30B25/14 , C30B29/38 , H01L21/28556 , H01L21/28562 , H01L21/76843 , H01L21/76876 , H01L21/76877
摘要： In one embodiment, a method for forming a tungsten material on a substrate surface is provide which includes positioning a substrate within a deposition chamber, heating the substrate to a deposition temperature, and exposing the substrate sequentially to diborane and a tungsten precursor gas to form a tungsten nucleation layer on the substrate during an atomic layer deposition (ALD) process. The method further provides exposing the substrate to a deposition gas comprising hydrogen gas and the tungsten precursor gas to form a tungsten bulk layer over the tungsten nucleation layer during a chemical vapor deposition (CVD) process. Examples are provided which include ALD and CVD processes that may be conducted in the same deposition chamber or in different deposition chambers.
摘要翻译：在一个实施例中，提供了一种在衬底表面上形成钨材料的方法，其包括将衬底定位在沉积室内，将衬底加热到沉积温度，并将衬底依次暴露于乙硼烷和钨前体气体，以形成在原子层沉积（ALD）过程中在基底上形成钨成核层。该方法进一步提供将衬底暴露于包含氢气和钨前体气体的沉积气体，以在化学气相沉积（CVD）工艺期间在钨成核层上形成钨体层。提供了包括可以在相同沉积室或不同沉积室中进行的ALD和CVD工艺的实例。

3. 发明授权

US07220673B2 Method for depositing tungsten-containing layers by vapor deposition techniques 有权
标题翻译：通过气相沉积技术沉积含钨层的方法
公开(公告)号：US07220673B2
公开(公告)日：2007-05-22
申请号：US11461909
申请日：2006-08-02
申请人： Ming Xi , Ashok Sinha , Moris Kori , Alfred W. Mak , Xinliang Lu , Ken Kaung Lai , Karl A. Littau
发明人： Ming Xi , Ashok Sinha , Moris Kori , Alfred W. Mak , Xinliang Lu , Ken Kaung Lai , Karl A. Littau
IPC分类号： H01L21/44
CPC分类号： C23C16/0272 , C23C16/34 , C23C16/45525 , C23C16/45527 , C23C16/45561 , C30B25/02 , C30B25/14 , C30B29/38 , H01L21/28562 , H01L21/76843 , H01L21/76876
摘要： In one embodiment, a method for forming a tungsten-containing material on a substrate is provided which includes forming a tungsten nucleation layer by sequentially exposing a substrate to a boron-containing gas and a tungsten-containing gas within a processing chamber during an atomic layer deposition process, and forming a tungsten bulk layer on the tungsten nucleation layer by exposing the substrate to a processing gas that contains the tungsten-containing gas and a reactive precursor gas within another processing chamber during a chemical vapor deposition process. In one example, the tungsten nucleation layer is deposited on a dielectric material, such as silicon oxide. In another example, the tungsten nucleation layer is deposited on a barrier material, such as titanium or titanium nitride. Other examples provide that the tungsten nucleation layer and the tungsten bulk layer are deposited in the same processing chamber.
摘要翻译：在一个实施例中，提供了一种用于在基板上形成含钨材料的方法，其包括通过在原子层中将衬底顺序地暴露于处理室内的含硼气体和含钨气体来形成钨成核层通过在化学气相沉积工艺期间将衬底暴露于另一处理室内含有含钨气体和反应性前体气体的处理气体，在钨成核层上形成钨体层。在一个实例中，钨成核层沉积在介电材料如氧化硅上。在另一个实例中，钨成核层沉积在诸如钛或氮化钛的阻挡材料上。其他实例提供了钨成核层和钨本体层沉积在相同的处理室中。

4. 发明授权

US06939804B2 Formation of composite tungsten films 有权
公开(公告)号：US06939804B2
公开(公告)日：2005-09-06
申请号：US10299212
申请日：2002-11-18
申请人： Ken K. Lai , Jeong Soo Byun , Frederick C. Wu , Ramanujapuran A. Srinivas , Avgerinos Gelatos , Mei Chang , Moris Kori , Ashok K. Sinha , Hua Chung , Hongbin Fang , Alfred W. Mak , Michael X. Yang , Ming Xi
发明人： Ken K. Lai , Jeong Soo Byun , Frederick C. Wu , Ramanujapuran A. Srinivas , Avgerinos Gelatos , Mei Chang , Moris Kori , Ashok K. Sinha , Hua Chung , Hongbin Fang , Alfred W. Mak , Michael X. Yang , Ming Xi
IPC分类号： C23C16/14 , C23C16/02 , C23C16/04 , C23C16/08 , C23C16/44 , C23C16/455 , H01L21/28 , H01L21/285 , H01L21/768 , H01L21/44
CPC分类号： C23C16/45525 , C23C16/0281 , C23C16/08 , C23C16/14 , C23C16/45523 , H01L21/28556 , H01L21/28562 , H01L21/76843 , H01L21/76876 , H01L21/76877
摘要： Methods for the deposition of tungsten films are provided. The methods include depositing a nucleation layer by alternatively adsorbing a tungsten precursor and a reducing gas on a substrate, and depositing a bulk layer of tungsten over the nucleation layer.

5. 发明授权

US5709772A Non-plasma halogenated gas flow to prevent metal residues 失效
标题翻译：非等离子体卤化气体流动，防止金属残留
公开(公告)号：US5709772A
公开(公告)日：1998-01-20
申请号：US625485
申请日：1996-03-29
申请人： Steve Ghanayem , Moris Kori , Maitreyee Mahajani , Ravi Rajagopalan
发明人： Steve Ghanayem , Moris Kori , Maitreyee Mahajani , Ravi Rajagopalan
IPC分类号： C23C16/02 , C23C16/44 , C23C16/455 , C23C16/52 , H01L21/302 , H01L21/3065 , H01L21/306 , C23F1/00
CPC分类号： C23C16/52 , C23C16/02 , C23C16/4405
摘要： An apparatus and process for limiting residue remaining after the etching of metal in a semiconductor manufacturing process by injecting a halogen-containing gas without a plasma into a processing chamber. The wafer is then exposed to the remnants of the halogen-containing gas in the chamber before the metal is deposited on the wafer. The exposure can occur in the same chamber as the metal deposition, or a different chamber. The wafer can remain in the chamber or be moved to another chamber for etching after exposure and deposition.
摘要翻译：一种用于限制半导体制造工艺中的金属蚀刻后剩余残留物的装置和方法，其中将不含等离子体的含卤素气体注入到处理室中。然后在金属沉积在晶片上之前，将晶片暴露于腔室中的含卤素气体的残留物。曝光可能发生在与金属沉积相同的室中，或者在不同的室中。晶片可以保留在腔室中，或者在曝光和沉积之后移动到另一个腔室进行蚀刻。

6. 发明授权

US07846840B2 Method for forming tungsten materials during vapor deposition processes 有权
公开(公告)号：US07846840B2
公开(公告)日：2010-12-07
申请号：US12645117
申请日：2009-12-22
申请人： Moris Kori , Alfred W. Mak , Jeong Soo Byun , Lawrence Chung-Lai Lei , Hua Chung
发明人： Moris Kori , Alfred W. Mak , Jeong Soo Byun , Lawrence Chung-Lai Lei , Hua Chung
IPC分类号： H01L21/44
CPC分类号： H01L21/76838 , C23C16/0272 , C23C16/14 , C23C16/4401 , C23C16/45525 , C23C16/45527 , C23C16/45529 , C23C16/45534 , C23C16/45561 , C30B25/02 , C30B25/14 , C30B29/38 , H01L21/28556 , H01L21/28562 , H01L21/76843 , H01L21/76876 , H01L21/76877
摘要： In one embodiment, a method for forming a tungsten material on a substrate surface is provide which includes positioning a substrate within a deposition chamber, heating the substrate to a deposition temperature, and exposing the substrate sequentially to diborane and a tungsten precursor gas to form a tungsten nucleation layer on the substrate during an atomic layer deposition (ALD) process. The method further provides exposing the substrate to a deposition gas comprising hydrogen gas and the tungsten precursor gas to form a tungsten bulk layer over the tungsten nucleation layer during a chemical vapor deposition (CVD) process. Examples are provided which include ALD and CVD processes that may be conducted in the same deposition chamber or in different deposition chambers.

7. 发明申请

US20060264031A1 METHOD FOR DEPOSITING TUNGSTEN-CONTAINING LAYERS BY VAPOR DEPOSITION TECHNIQUES 有权
标题翻译：通过蒸发沉积技术沉积含钨层的方法
公开(公告)号：US20060264031A1
公开(公告)日：2006-11-23
申请号：US11461909
申请日：2006-08-02
申请人： Ming Xi , Ashok Sinha , Moris Kori , Alfred Mak , Xinliang Lu , Ken Lai , Karl Littau
发明人： Ming Xi , Ashok Sinha , Moris Kori , Alfred Mak , Xinliang Lu , Ken Lai , Karl Littau
IPC分类号： H01L21/4763
CPC分类号： C23C16/0272 , C23C16/34 , C23C16/45525 , C23C16/45527 , C23C16/45561 , C30B25/02 , C30B25/14 , C30B29/38 , H01L21/28562 , H01L21/76843 , H01L21/76876
摘要： In one embodiment, a method for forming a tungsten-containing material on a substrate is provided which includes forming a tungsten nucleation layer by sequentially exposing a substrate to a boron-containing gas and a tungsten-containing gas within a processing chamber during an atomic layer deposition process, and forming a tungsten bulk layer on the tungsten nucleation layer by exposing the substrate to a processing gas that contains the tungsten-containing gas and a reactive precursor gas within another processing chamber during a chemical vapor deposition process. In one example, the tungsten nucleation layer is deposited on a dielectric material, such as silicon oxide. In another example, the tungsten nucleation layer is deposited on a barrier material, such as titanium or titanium nitride. Other examples provide that the tungsten nucleation layer and the tungsten bulk layer are deposited in the same processing chamber.
摘要翻译：在一个实施例中，提供了一种用于在基板上形成含钨材料的方法，其包括通过在原子层中将衬底顺序地暴露于处理室内的含硼气体和含钨气体来形成钨成核层通过在化学气相沉积工艺期间将衬底暴露于另一处理室内含有含钨气体和反应性前体气体的处理气体，在钨成核层上形成钨体层。在一个实例中，钨成核层沉积在介电材料如氧化硅上。在另一个实例中，钨成核层沉积在诸如钛或氮化钛的阻挡材料上。其他实例提供了钨成核层和钨本体层沉积在相同的处理室中。

8. 发明授权

US06729824B2 Dual robot processing system 失效
标题翻译：双机器人处理系统
公开(公告)号：US06729824B2
公开(公告)日：2004-05-04
申请号：US10017039
申请日：2001-12-14
申请人： Lawrence C. Lei , Moris Kori
发明人： Lawrence C. Lei , Moris Kori
IPC分类号： B65G4907
CPC分类号： H01L21/67184 , H01L21/67126 , H01L21/67201 , H01L21/67742 , H01L21/67745 , H01L21/67748 , Y10S414/139
摘要： A substrate processing system having a transfer chamber having two processing chambers and two load lock chambers coupled thereto is generally provided. The transfer chamber includes a body having a first transfer area and a second transfer area defined therein on either side of a center axis. A first passage couples one of the load locks with the first transfer area and a second passage couples the other one of the load locks with the second transfer area. The first passage and the second passage form an acute angle about the center axis. A transfer platform is disposed between the first transfer area and the second transfer area. A first transfer robot and a second transfer robot are disposed in the first and second transfer areas, respectively. Each robot is adapted to transfer substrates between the load locks, the transfer platform and a processing chamber.
摘要翻译：通常提供具有传送室的基板处理系统，该传送室具有两个处理室和与其连接的两个加载锁定室。传送室包括在中心轴线的任一侧上具有限定在其中的第一传送区域和第二传送区域的主体。第一通道将负载锁中的一个与第一传送区域耦合，并且第二通道将另一个负载锁与第二传送区域耦合。第一通道和第二通道围绕中心轴线形成锐角。传送平台设置在第一传送区域和第二传送区域之间。第一传送机器人和第二传送机器人分别设置在第一传送区域和第二传送区域中。每个机器人适于在负载锁，转移平台和处理室之间传送衬底。

9. 发明授权

US6040011A Substrate support member with a purge gas channel and pumping system 失效
标题翻译：衬底支撑构件，具有吹扫气体通道和泵送系统
公开(公告)号：US6040011A
公开(公告)日：2000-03-21
申请号：US103462
申请日：1998-06-24
申请人： Joseph Yudovsky , Moris Kori
发明人： Joseph Yudovsky , Moris Kori
IPC分类号： C23C16/44 , C23C16/455 , C23C16/458 , H01L21/205 , H01L21/683 , H01L21/687 , C23C16/06
CPC分类号： C23C16/45521 , C23C16/4412 , C23C16/4585 , H01L21/68735 , H01L21/68785 , H01L21/68792
摘要： The present invention discloses susceptor used in vacuum CVD chambers which provides a purge gas delivery and removal system that inhibits the deposition of process gas on the edge and back side of a substrate, while providing access to the entire surface of the substrate for processing. The susceptor has a substrate receiving surface having a perimeter. A purge gas such as argon is passed over the perimeter of the surface using a purge gas system having an inlet disposed adjacent to the substrate receiving surface. The purge gas is removed by a pump system having an outlet disposed adjacent to the substrate receiving surface.
摘要翻译：本发明公开了一种在真空CVD室中使用的基座，其提供了一种吹扫气体输送和去除系统，该系统抑制工艺气体沉积在衬底的边缘和背面，同时提供对衬底的整个表面的接近进行处理。基座具有具有周边的基板接收表面。诸如氩气的吹扫气体使用具有邻近基板接收表面设置的入口的吹扫气体系统在表面周界上通过。通过具有邻近基板接收表面设置的出口的泵系统去除吹扫气体。

10. 发明授权

US07605083B2 Formation of composite tungsten films 有权
标题翻译：复合钨膜的形成
公开(公告)号：US07605083B2
公开(公告)日：2009-10-20
申请号：US12128499
申请日：2008-05-28
申请人： Ken K. Lai , Jeong Soo Byun , Frederick C. Wu , Ramanujapuran A. Srinivas , Avgerinos Gelatos , Mei Chang , Moris Kori , Ashok K. Sinha , Hua Chung , Hongbin Fang , Alfred W. Mak , Michael X. Yang , Ming Xi
发明人： Ken K. Lai , Jeong Soo Byun , Frederick C. Wu , Ramanujapuran A. Srinivas , Avgerinos Gelatos , Mei Chang , Moris Kori , Ashok K. Sinha , Hua Chung , Hongbin Fang , Alfred W. Mak , Michael X. Yang , Ming Xi
IPC分类号： H01L21/44
CPC分类号： C23C16/45525 , C23C16/0281 , C23C16/08 , C23C16/14 , C23C16/45523 , H01L21/28556 , H01L21/28562 , H01L21/76843 , H01L21/76876 , H01L21/76877
摘要： Embodiments of the invention provide methods for depositing tungsten materials. In one embodiment, a method for forming a composite tungsten film is provided which includes positioning a substrate within a process chamber, forming a tungsten nucleation layer on the substrate by subsequently exposing the substrate to a tungsten precursor and a reducing gas containing hydrogen during a cyclic deposition process, and forming a tungsten bulk layer during a plasma-enhanced chemical vapor deposition (PE-CVD) process. The PE-CVD process includes exposing the substrate to a deposition gas containing the tungsten precursor while depositing the tungsten bulk layer over the tungsten nucleation layer. In some example, the tungsten nucleation layer has a thickness of less than about 100 Å, such as about 15 Å. In other examples, a carrier gas containing hydrogen is constantly flowed into the process chamber during the cyclic deposition process.
摘要翻译：本发明的实施例提供了沉积钨材料的方法。在一个实施例中，提供了一种用于形成复合钨膜的方法，其包括将衬底定位在处理室内，通过在循环中随后将衬底暴露于钨前体和含氢的还原气体，在衬底上形成钨成核层沉积工艺，以及在等离子体增强化学气相沉积（PE-CVD）工艺期间形成钨体层。 PE-CVD工艺包括将衬底暴露于含有钨前体的沉积气体，同时在钨成核层上沉积钨体层。在一些实例中，钨成核层的厚度小于约，例如约为15。在其他实例中，在循环沉积过程中，含有氢气的载气不断地流入处理室。

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