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11. 发明申请

US20070237200A1 Semiconductor laser diode array 失效
标题翻译：半导体激光二极管阵列
公开(公告)号：US20070237200A1
公开(公告)日：2007-10-11
申请号：US11513053
申请日：2006-08-31
申请人： Han-youl Ryu , Ok-hyun Nam , Kyoung-ho Ha
发明人： Han-youl Ryu , Ok-hyun Nam , Kyoung-ho Ha
IPC分类号： H01S5/00
CPC分类号： H01S5/405 , B82Y20/00 , H01S5/0224 , H01S5/042 , H01S5/0425 , H01S5/22 , H01S5/34333
摘要： A semiconductor laser diode array is provided. The semiconductor laser diode array includes: a lower semiconductor laser diode chip having a dual structure including a lower substrate, a first laser generating region disposed on the lower substrate, and a second laser generating region disposed on the lower substrate and separated from the first laser generating region; an upper semiconductor laser diode chip having a dual structure including an upper substrate, a third laser generating region disposed on the upper substrate, and a fourth laser generating region disposed on the upper substrate and separated from the third laser generating region; and an electrode unit electrically connecting the first through fourth laser generating regions to the outside. The first and second laser generating regions are vertically bonded to the third and fourth laser generating regions, respectively, so that the first through fourth light-emitting points in the first through fourth laser generating regions from which laser beams are emitted are arranged in a two-dimensional fashion.
摘要翻译：提供半导体激光二极管阵列。半导体激光二极管阵列包括：具有双结构的下半导体激光二极管芯片，包括下基板，设置在下基板上的第一激光产生区域和设置在下基板上并与第一激光器分离的第二激光产生区域生成区域具有双重结构的上半导体激光二极管芯片，包括上基板，设置在上基板上的第三激光产生区域和设置在上基板上并与第三激光产生区域分离的第四激光发生区域; 以及将第一至第四激光产生区域电连接到外部的电极单元。第一和第二激光产生区域分别垂直地结合到第三和第四激光产生区域，使得发射激光束的第一至第四激光产生区域中的第一至第四发光点被布置成两个维度时尚。

12. 发明申请

US20070081570A1 Side light emitting type semiconductor laser diode having dielectric layer formed on active layer 失效
标题翻译：具有形成在有源层上的电介质层的侧面发光型半导体激光二极管
公开(公告)号：US20070081570A1
公开(公告)日：2007-04-12
申请号：US11545546
申请日：2006-10-11
申请人： Han-youl Ryu , Kyoung-ho Ha
发明人： Han-youl Ryu , Kyoung-ho Ha
IPC分类号： H01S5/00
CPC分类号： H01S5/2231 , B82Y20/00 , H01S5/0422 , H01S5/0425 , H01S5/0655 , H01S5/2063 , H01S5/2222 , H01S5/24 , H01S5/34333 , H01S2301/173
摘要： Provided is a side light emitting type semiconductor laser diode in which a dielectric layer is formed on an active layer. The side light emitting type semiconductor laser diode includes an n-clad layer, an n-light guide layer, an active layer and a p-light guide layer sequentially formed on a substrate, and a dielectric layer with a ridge structure formed on the p-light guide layer.
摘要翻译：提供一种在有源层上形成电介质层的侧面发光型半导体激光二极管。侧面发光型半导体激光二极管包括依次形成在基板上的n包覆层，n导光层，有源层和p导光层，以及在p上形成有脊结构的电介质层指导层。

13. 发明申请

US20060231850A1 Semiconductor laser diode having ridge portion and method of manufacturing the same 审中-公开
标题翻译：具有脊部的半导体激光二极管及其制造方法
公开(公告)号：US20060231850A1
公开(公告)日：2006-10-19
申请号：US11350936
申请日：2006-02-10
申请人： Tan Sakong , Tae-hoon Jang , Joong-kon Son , Han-youl Ryu
发明人： Tan Sakong , Tae-hoon Jang , Joong-kon Son , Han-youl Ryu
IPC分类号： H01L33/00
CPC分类号： H01S5/2231 , H01S5/0422 , H01S5/221 , H01S5/2226 , H01S5/2227 , H01S5/32341 , H01S2304/04
摘要： Provided is a semiconductor laser diode having a ridge portion and a method of manufacturing the semiconductor laser diode. The semiconductor laser diode includes: a first clad layer, an active layer formed on the first clad layer, a second clad layer formed on the active layer and having a stripe shaped ridge portion; and a buried layer formed of AlGaInN and grown on the second clad layer except for a region of an upper surface of the ridge portion.
摘要翻译：提供了具有脊部分的半导体激光二极管和制造半导体激光二极管的方法。半导体激光二极管包括：第一覆盖层，形成在第一覆盖层上的有源层，形成在有源层上并具有条形脊部分的第二覆盖层; 以及由AlGaInN形成的埋层，并且在除了所述脊部的上表面的区域之外的所述第二包覆层上生长。

14. 发明申请

US20120087673A1 OPTICAL INTERCONNECTION SYSTEM FOR TRANSMITTING AND RECEIVING A THREE-LEVEL SIGNAL AND METHOD OF OPERATING THE SAME 审中-公开
标题翻译：用于发送和接收三级信号的光学互连系统及其操作方法
公开(公告)号：US20120087673A1
公开(公告)日：2012-04-12
申请号：US13323105
申请日：2011-12-12
申请人： Han-youl Ryu , Sung-dong Suh , Kyoung-ho Ha , Seong-gu Kim
发明人： Han-youl Ryu , Sung-dong Suh , Kyoung-ho Ha , Seong-gu Kim
IPC分类号： H04B10/00
CPC分类号： H04B10/2504
摘要： Provided is an optical interconnection system that transmits and receives a three-level signal. The optical interconnection system includes a first and a second optical interconnection device that transmits and receives a two-level signal, and a synthesizer that outputs a three-level signal by synthesizing signals from the first and second optical interconnection devices. The optical interconnection system may transmit and receive a three-level signal while using an optical interconnection device that interconnects a two-level signal.
摘要翻译：提供了发送和接收三电平信号的光互连系统。光互连系统包括发送和接收两电平信号的第一和第二光学互连装置，以及通过合成来自第一和第二光学互连装置的信号输出三电平信号的合成器。光互连系统可以在使用互连两级信号的光互连装置的同时发送和接收三电平信号。

15. 发明授权

US07826505B2 III-V group GaN-based compound semiconductor device 有权
标题翻译： III-V族GaN基化合物半导体器件
公开(公告)号：US07826505B2
公开(公告)日：2010-11-02
申请号：US11445220
申请日：2006-06-02
申请人： Joong-kon Son , Kyoung-ho Ha , Han-youl Ryu
发明人： Joong-kon Son , Kyoung-ho Ha , Han-youl Ryu
IPC分类号： H01S5/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/04 , H01L33/06 , H01L33/32 , H01S5/0213 , H01S5/2004 , H01S5/2013 , H01S5/22 , H01S5/3213 , H01S5/3216
摘要： A III-V Group GaN-based compound semiconductor device with an improved structure having low current comsumption, high optical output, and a long lifetime is provided. The III-V Group GaN-based compound semiconductor device includes an active layer and a first clad layer and a second clad layer, wherein at least one of the first clad layer and the second clad layer has a superlattice structure formed of a plurality of alternating AlxGa(1-x)N layers (0
摘要翻译：提供了具有低电流消耗，高光输出和长寿命的改进结构的III-V族GaN基化合物半导体器件。 III-V族GaN基化合物半导体器件包括有源层和第一覆盖层和第二覆盖层，其中，第一覆盖层和第二覆盖层中的至少一个具有由多个交替形成的超晶格结构 Al x Ga（1-x）N层（0

16. 发明申请

US20080102546A1 Method of manufacturing semiconductor laser device including light shield plate 失效
标题翻译：制造包括遮光板的半导体激光装置的方法
公开(公告)号：US20080102546A1
公开(公告)日：2008-05-01
申请号：US11889121
申请日：2007-08-09
申请人： Han-youl Ryu , Kyoung-ho Ha , Youn-joon Sung
发明人： Han-youl Ryu , Kyoung-ho Ha , Youn-joon Sung
IPC分类号： H01L33/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0213 , H01S5/0286 , H01S5/2027 , H01S5/22 , H01S2301/18
摘要： Provided is a method of manufacturing a semiconductor laser device having a light shield film comprising: forming a light emission structure by depositing a first clad layer, an active layer and a second clad layer on a substrate; depositing a light shield film and a protection film on the light emission face of the light emission structure; removing the light shield film corresponding to an area of the light emission face of the light emission structure including and above the first clad layer; and removing the protection layer.
摘要翻译：提供一种制造具有遮光膜的半导体激光器件的方法，包括：通过在衬底上沉积第一覆盖层，有源层和第二覆盖层来形成发光结构; 在发光结构的发光面上沉积遮光膜和保护膜; 去除与包括第一包层以上的发光结构的发光面的区域相对应的遮光膜; 并去除保护层。

17. 发明申请

US20080095492A1 Semiconductor optoelectronic device and method of fabricating the same 有权
标题翻译：半导体光电器件及其制造方法
公开(公告)号：US20080095492A1
公开(公告)日：2008-04-24
申请号：US11878495
申请日：2007-07-25
申请人： Joong-kon Son , Han-youl Ryu , Tan Sakong , Ho-sun Paek , Sung-nam Lee
发明人： Joong-kon Son , Han-youl Ryu , Tan Sakong , Ho-sun Paek , Sung-nam Lee
IPC分类号： G02B6/12
CPC分类号： H01L33/02 , B82Y20/00 , H01L33/06 , H01L33/32 , H01S5/0014 , H01S5/2004 , H01S5/2009 , H01S5/321 , H01S5/3213 , H01S5/3403 , H01S5/3406 , H01S5/34333
摘要： Provided is a semiconductor opto-electronic device that may comprise an active layer including a quantum well and a barrier layer on a substrate, upper and lower waveguide layers on and underneath the active layer, respectively, and upper and lower clad layers on and underneath the upper and lower waveguide layers, respectively. The semiconductor opto-electronic device may further comprise an upper optical confinement layer (OCL) between the active layer and the upper waveguide layer and having an energy gap smaller than the energy gap of the upper waveguide layer and equal to or larger than the energy gap of the barrier layer, and a lower OCL between the active layer and the lower waveguide layer and having an energy gap smaller than the energy gap of the lower waveguide layer and equal to or smaller than the energy gap of the barrier layer. Also provided is a method of fabricating the semiconductor opto-electronic device.
摘要翻译：提供了一种半导体光电器件，其可以包括分别包括量子阱和在衬底上的势垒层，有源层上和下面的上波导层和下层波导层的有源层，以及位于有源层之上和之下的上和下包层上下波导层。半导体光电器件还可以包括在有源层和上波导层之间的上部光限制层（OCL），并且具有小于上波导层的能隙的能隙，并且等于或大于能隙以及有源层和下波导层之间的下部OCL，并且具有小于下部波导层的能隙的能隙，并且等于或小于势垒层的能隙。还提供了一种制造半导体光电器件的方法。

18. 发明申请

US20060093001A1 Multiple-wavelength laser diode and method of fabricating the same 审中-公开
标题翻译：多波长激光二极管及其制造方法
公开(公告)号：US20060093001A1
公开(公告)日：2006-05-04
申请号：US11220790
申请日：2005-09-08
申请人： Han-youl Ryu , Ok-hyun Nam , Kyoung-ho Ha
发明人： Han-youl Ryu , Ok-hyun Nam , Kyoung-ho Ha
IPC分类号： H01S5/00
CPC分类号： H01S5/4043 , H01S5/32325 , H01S5/32341 , H01S5/4087
摘要： A multiple-wavelength laser diode (LD) and method of fabricating the same are provided. The multiple-wavelength LD includes at least three LDs, which are sequentially stacked and aligned such that centers of emission points of the at least three LDs form a line.
摘要翻译：提供了一种多波长激光二极管（LD）及其制造方法。多波长LD包括至少三个LD，其顺序地堆叠和对准，使得至少三个LD的发射点的中心形成一条线。

19. 发明申请

US20120248404A1 GALLIUM-NITRIDE LIGHT EMITTING DIODE AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：氮化钠发光二极管及其制造方法
公开(公告)号：US20120248404A1
公开(公告)日：2012-10-04
申请号：US13406544
申请日：2012-02-28
申请人： Jong Moo LEE , Han Youl RYU , Eun Soo NAM , Sung Bum BAE
发明人： Jong Moo LEE , Han Youl RYU , Eun Soo NAM , Sung Bum BAE
IPC分类号： H01L33/04 , H01L33/32
CPC分类号： H01L33/0075 , H01L33/325
摘要： The present disclosure relates to a gallium-nitride light emitting diode and a manufacturing method thereof and the gallium-nitride light emitting diode includes an n-type nitride semiconductor layer formed on a substrate; an active layer formed on the n-type nitride semiconductor layer; a p-type doped intermediate layer formed on the active layer; and a p-type nitride semiconductor layer formed on the intermediate layer.
摘要翻译：本发明涉及氮化镓发光二极管及其制造方法，氮化镓发光二极管包括在基板上形成的n型氮化物半导体层; 形成在所述n型氮化物半导体层上的有源层; 形成在有源层上的p型掺杂中间层; 以及形成在中间层上的p型氮化物半导体层。

20. 发明授权

US08098994B2 Optical interconnection system for transmitting and receiving a three-level signal and method of operating the same 有权
标题翻译：用于发送和接收三电平信号的光互连系统及其操作方法
公开(公告)号：US08098994B2
公开(公告)日：2012-01-17
申请号：US12213151
申请日：2008-06-16
申请人： Han-youl Ryu , Sung-dong Suh , Kyoung-ho Ha , Seong-gu Kim
发明人： Han-youl Ryu , Sung-dong Suh , Kyoung-ho Ha , Seong-gu Kim
IPC分类号： H04B10/12
CPC分类号： H04B10/2504
摘要： Provided is an optical interconnection system that transmits and receives a three-level signal. The optical interconnection system includes a first and a second optical interconnection device that transmits and receives a two-level signal, and a synthesizer that outputs a three-level signal by synthesizing signals from the first and second optical interconnection devices. The optical interconnection system may transmit and receive a three-level signal while using an optical interconnection device that interconnects a two-level signal.
摘要翻译：提供了发送和接收三电平信号的光互连系统。光互连系统包括发送和接收两电平信号的第一和第二光学互连装置，以及通过合成来自第一和第二光学互连装置的信号输出三电平信号的合成器。光互连系统可以在使用互连两级信号的光互连装置的同时发送和接收三电平信号。

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