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1. 发明申请

US20060231850A1 Semiconductor laser diode having ridge portion and method of manufacturing the same 审中-公开
标题翻译：具有脊部的半导体激光二极管及其制造方法
公开(公告)号：US20060231850A1
公开(公告)日：2006-10-19
申请号：US11350936
申请日：2006-02-10
申请人： Tan Sakong , Tae-hoon Jang , Joong-kon Son , Han-youl Ryu
发明人： Tan Sakong , Tae-hoon Jang , Joong-kon Son , Han-youl Ryu
IPC分类号： H01L33/00
CPC分类号： H01S5/2231 , H01S5/0422 , H01S5/221 , H01S5/2226 , H01S5/2227 , H01S5/32341 , H01S2304/04
摘要： Provided is a semiconductor laser diode having a ridge portion and a method of manufacturing the semiconductor laser diode. The semiconductor laser diode includes: a first clad layer, an active layer formed on the first clad layer, a second clad layer formed on the active layer and having a stripe shaped ridge portion; and a buried layer formed of AlGaInN and grown on the second clad layer except for a region of an upper surface of the ridge portion.
摘要翻译：提供了具有脊部分的半导体激光二极管和制造半导体激光二极管的方法。半导体激光二极管包括：第一覆盖层，形成在第一覆盖层上的有源层，形成在有源层上并具有条形脊部分的第二覆盖层; 以及由AlGaInN形成的埋层，并且在除了所述脊部的上表面的区域之外的所述第二包覆层上生长。

2. 发明授权

US07483463B2 Ridge-waveguide semiconductor laser diode 有权
标题翻译：脊波导半导体激光二极管
公开(公告)号：US07483463B2
公开(公告)日：2009-01-27
申请号：US11505871
申请日：2006-08-18
申请人： Joong-kon Son , Tae-hoon Jang , Youn-joon Sung , Tan Sakong , Ho-sun Paek , Sung-nam Lee
发明人： Joong-kon Son , Tae-hoon Jang , Youn-joon Sung , Tan Sakong , Ho-sun Paek , Sung-nam Lee
IPC分类号： H01S5/00
CPC分类号： H01S5/2231 , B82Y20/00 , H01S5/0422 , H01S5/0425 , H01S5/2009 , H01S5/2214 , H01S5/3216 , H01S5/34333
摘要： A ridge-waveguide semiconductor laser diode with an improved current injection structure is provided. The ridge-waveguide semiconductor laser diode includes: a substrate; a lower multi-semiconductor layer formed on the substrate; an active layer formed on the lower multi-semiconductor layer; an upper multi-semiconductor layer having a ridge portion and formed on the active layer; and an upper electrode formed on the upper multi-semiconductor layer, wherein the upper electrode covers at least one side surface of the ridge portion.
摘要翻译：提供了具有改进的电流注入结构的脊 - 波导半导体激光二极管。脊波导半导体激光二极管包括：基板; 形成在所述基板上的下部多半导体层; 形成在下多层半导体层上的有源层; 具有脊部并形成在有源层上的上多层半导体层; 以及形成在所述上多层半导体层上的上电极，其中所述上电极覆盖所述脊部的至少一个侧表面。

3. 发明申请

US20060280215A1 Ridge-waveguide semiconductor laser diode 有权
公开(公告)号：US20060280215A1
公开(公告)日：2006-12-14
申请号：US11505871
申请日：2006-08-18
申请人： Joong-kon Son , Tae-hoon Jang , Youn-loon Sung , Tan Sakong , Ho-sun Paek , Sung-nam Lee
发明人： Joong-kon Son , Tae-hoon Jang , Youn-loon Sung , Tan Sakong , Ho-sun Paek , Sung-nam Lee
IPC分类号： H01S5/00 , H01S3/097
CPC分类号： H01S5/2231 , B82Y20/00 , H01S5/0422 , H01S5/0425 , H01S5/2009 , H01S5/2214 , H01S5/3216 , H01S5/34333
摘要： A ridge-waveguide semiconductor laser diode with an improved current injection structure is provided. The ridge-waveguide semiconductor laser diode includes: a substrate; a lower multi-semiconductor layer formed on the substrate; an active layer formed on the lower multi-semiconductor layer; an upper multi-semiconductor layer having a ridge portion and formed on the active layer; and an upper electrode formed on the upper multi-semiconductor layer, wherein the upper electrode covers at least one side surface of the ridge portion.

4. 发明授权

US07632742B2 Substrate for growing Pendeo epitaxy and method of forming the same 有权
标题翻译：用于生长Pendeo外延的底物及其形成方法
公开(公告)号：US07632742B2
公开(公告)日：2009-12-15
申请号：US11650981
申请日：2007-01-09
申请人： Ho-sun Paek , Tae-hoon Jang , Youn-joon Sung , Tan Sakong , Min-ho Yang
发明人： Ho-sun Paek , Tae-hoon Jang , Youn-joon Sung , Tan Sakong , Min-ho Yang
IPC分类号： H01L21/20
CPC分类号： C30B7/005 , C30B29/403 , H01L21/0237 , H01L21/0254 , H01L21/02639 , H01L21/0265
摘要： A Pendeo-epitaxy growth substrate and a method of manufacturing the same are provided. The Pendeo-epitaxy growth substrate includes a substrate, a plurality of pattern areas formed on the substrate in a first direction for Pendeo-epitaxy growth, and at least one solution blocking layer contacting the plurality of pattern areas and formed on the substrate in a second direction, thereby preventing contamination of a semiconductor device due to air gaps and reducing the percentage defects of the semiconductor device during a Pendeo-epitaxy growth process.
摘要翻译：提供了一种外延生长衬底及其制造方法。骨架外延生长衬底包括衬底，在第一方向上形成在衬底上的用于Pendeo-外延生长的多个图案区域，以及至少一个溶液阻挡层，其与多个图案区域接触并在第二个衬底上形成从而防止由于空气间隙而导致的半导体器件的污染，并且在Pendeo-外延生长工艺期间减少半导体器件的缺陷百分比。

5. 发明申请

US20070190755A1 Substrate for growing Pendeo epitaxy and method of forming the same 有权
标题翻译：用于生长Pendeo外延的底物及其形成方法
公开(公告)号：US20070190755A1
公开(公告)日：2007-08-16
申请号：US11650981
申请日：2007-01-09
申请人： Ho-sun Paek , Tae-hoon Jang , Youn-Joon Sung , Tan Sakong , Min-ho Yang
发明人： Ho-sun Paek , Tae-hoon Jang , Youn-Joon Sung , Tan Sakong , Min-ho Yang
IPC分类号： H01L21/20
CPC分类号： C30B7/005 , C30B29/403 , H01L21/0237 , H01L21/0254 , H01L21/02639 , H01L21/0265
摘要： A Pendeo-epitaxy growth substrate and a method of manufacturing the same are provided. The Pendeo-epitaxy growth substrate includes a substrate, a plurality of pattern areas formed on the substrate in a first direction for Pendeo-epitaxy growth, and at least one solution blocking layer contacting the plurality of pattern areas and formed on the substrate in a second direction, thereby preventing contamination of a semiconductor device due to air gaps and reducing the percentage defects of the semiconductor device during a Pendeo-epitaxy growth process.
摘要翻译：提供了一种外延生长衬底及其制造方法。骨架外延生长衬底包括衬底，在第一方向上形成在衬底上的用于Pendeo-外延生长的多个图案区域，以及至少一个溶液阻挡层，其与多个图案区域接触并在第二个衬底上形成从而防止由于空气间隙而导致的半导体器件的污染，并且在Pendeo-外延生长工艺期间减少半导体器件的缺陷百分比。

6. 发明授权

US07522649B2 Submount of a multi-beam laser diode module 有权
标题翻译：多光束激光二极管模块的底座
公开(公告)号：US07522649B2
公开(公告)日：2009-04-21
申请号：US11808174
申请日：2007-06-07
申请人： Kyoung-ho Ha , Tae-hoon Jang , Hyung-kun Kim
发明人： Kyoung-ho Ha , Tae-hoon Jang , Hyung-kun Kim
IPC分类号： H01S5/00
CPC分类号： H01S5/4031 , H01S5/0224 , H01S5/02272 , H01S5/02276 , H01S5/22
摘要： Example embodiments may provide a submount in to which a multi-beam laser diode may be flip-chip bonded and a multi-beam laser diode module including the submount. The submount may include a first submount and a second submount. The first submount may include a first substrate, a plurality of first solder layers formed on the first substrate corresponding to electrodes of the multi-beam laser diode, and a plurality of via holes that may penetrate the first substrate and may be filled with conductive materials to electrically connect to the first solder layers. The electrodes may be bonded to the first solder layers. The second submount may include a second substrate under the first substrate and a plurality of bonding pads corresponding to the number of electrodes formed on the second substrate to electrically connect to the conductive materials filled in the via holes.
摘要翻译：示例性实施例可以提供一个子基座，多子束激光二极管可以被倒装接合到其上，并且包括该子基座的多光束激光二极管模块。子安装板可以包括第一子安装座和第二子安装座。第一基座可以包括第一基板，形成在对应于多光束激光二极管的电极的第一基板上的多个第一焊料层和可以穿透第一基板的多个通孔，并且可以填充导电材料以电连接到第一焊料层。电极可以结合到第一焊料层。第二基座可以包括在第一基板下面的第二基板和对应于形成在第二基板上的电极的数量的多个接合焊盘，以电连接到填充在通孔中的导电材料。

7. 发明申请

US20070286252A1 Submount of a multi-beam laser diode module 有权
标题翻译：多光束激光二极管模块的底座
公开(公告)号：US20070286252A1
公开(公告)日：2007-12-13
申请号：US11808174
申请日：2007-06-07
申请人： Kyoung-ho Ha , Tae-hoon Jang , Hyung-kun Kim
发明人： Kyoung-ho Ha , Tae-hoon Jang , Hyung-kun Kim
IPC分类号： H01S5/00
CPC分类号： H01S5/4031 , H01S5/0224 , H01S5/02272 , H01S5/02276 , H01S5/22
摘要： Example embodiments may provide a submount in to which a multi-beam laser diode may be flip-chip bonded and a multi-beam laser diode module including the submount. The submount may include a first submount and a second submount. The first submount may include a first substrate, a plurality of first solder layers formed on the first substrate corresponding to electrodes of the multi-beam laser diode, and a plurality of via holes that may penetrate the first substrate and may be filled with conductive materials to electrically connect to the first solder layers. The electrodes may be bonded to the first solder layers. The second submount may include a second substrate under the first substrate and a plurality of bonding pads corresponding to the number of electrodes formed on the second substrate to electrically connect to the conductive materials filled in the via holes.
摘要翻译：示例性实施例可以提供一个子基座，多子束激光二极管可以被倒装接合到其上，并且包括该子基座的多光束激光二极管模块。子安装板可以包括第一子安装座和第二子安装座。第一基座可以包括第一基板，形成在对应于多光束激光二极管的电极的第一基板上的多个第一焊料层和可以穿透第一基板的多个通孔，并且可以填充导电材料以电连接到第一焊料层。电极可以结合到第一焊料层。第二基座可以包括在第一基板下面的第二基板和对应于形成在第二基板上的电极的数量的多个接合焊盘，以电连接到填充在通孔中的导电材料。

8. 发明授权

US08390018B2 Nitride-based compound semiconductor light emitting device and method of fabricating the same 失效
标题翻译：氮化物系化合物半导体发光元件及其制造方法
公开(公告)号：US08390018B2
公开(公告)日：2013-03-05
申请号：US11448831
申请日：2006-06-08
申请人： Tae-hoon Jang
发明人： Tae-hoon Jang
IPC分类号： H01L33/00
CPC分类号： H01L33/40 , H01L33/0095 , H01L33/32
摘要： A nitride-based semiconductor light emitting device with improved characteristics of ohmic contact to an n-electrode and a method of fabricating the same are provided. The nitride-based semiconductor light emitting device includes an n-electrode, a p-electrode, an n-type compound semiconductor layer, and an active layer and a p-type compound semiconductor layer formed between the n- and p-electrodes. The n-electrode includes: a first electrode layer formed of at least one element selected from the group consisting of Pd, Pt, Ni, Co, Rh, Ir, Fe, Ru, Os, Cu, Ag, and Au; and a second electrode layer formed on the first electrode layer using a conductive material containing at least one element selected from the group consisting of Ti, V, Cr, Zr, Nb, Hf, Ta, Mo, W, Re, Ir, Al, In, Pb, Ni, Rh, Ru, Os, and Au.
摘要翻译：提供了具有改善的与n电极的欧姆接触特性的氮化物基半导体发光器件及其制造方法。氮化物系半导体发光元件包括形成在n电极和p电极之间的n电极，p电极，n型化合物半导体层以及有源层和p型化合物半导体层。 n电极包括：由选自Pd，Pt，Ni，Co，Rh，Ir，Fe，Ru，Os，Cu，Ag和Au中的至少一种元素形成的第一电极层; 以及第二电极层，其使用含有选自Ti，V，Cr，Zr，Nb，Hf，Ta，Mo，W，Re，Ir，Al中的至少一种元素的导电材料形成在第一电极层上， In，Pb，Ni，Rh，Ru，Os和Au。

9. 发明申请

US20060251137A1 Semiconductor laser diode and method for manufacturing the same 失效
标题翻译：半导体激光二极管及其制造方法
公开(公告)号：US20060251137A1
公开(公告)日：2006-11-09
申请号：US11340590
申请日：2006-01-27
申请人： Youn-joon Sung , Tae-hoon Jang
发明人： Youn-joon Sung , Tae-hoon Jang
IPC分类号： H01S5/00
CPC分类号： H01S5/22
摘要： In the semiconductor laser diode, a first material layer, an active layer, and a second material layer are sequentially formed on a substrate, a ridge portion and a first protrusion portion are formed on the second material layer in a direction perpendicular to the active layer, the first protrusion portion being formed at one side of the ridge portion, a second electrode layer is formed in contact with a top surface of the ridge portion, a current restricting layer is formed on an entire surface of the second material layer and exposes the second electrode layer, a protective layer is formed on a surface of the current restricting layer above the first protrusion portion and has an etch selectivity different from that of the current restricting layer, and a bonding metal layer is formed on the current restricting layer and the protective layer in electrical connection with the second electrode layer.
摘要翻译：在半导体激光二极管中，第一材料层，有源层和第二材料层依次形成在基板上，脊部和第一突出部分在垂直于有源层的方向上形成在第二材料层上所述第一突起部分形成在所述脊部的一侧，形成与所述脊部的顶面接触的第二电极层，在所述第二材料层的整个表面上形成限流层，第二电极层，在第一突起部分上方的电流限制层的表面上形成保护层，并且具有不同于电流限制层的蚀刻选择性，并且在电流限制层上形成接合金属层，与第二电极层电连接的保护层。

10. 发明授权

US08367443B2 Method of manufacturing semiconductor light emitting device 失效
标题翻译：制造半导体发光器件的方法
公开(公告)号：US08367443B2
公开(公告)日：2013-02-05
申请号：US13137374
申请日：2011-08-10
申请人： Youn-joon Sung , Su-hee Chae , Tae-hoon Jang , Kyu-sang Kim
发明人： Youn-joon Sung , Su-hee Chae , Tae-hoon Jang , Kyu-sang Kim
IPC分类号： H01L21/00
CPC分类号： H01L33/0095 , H01L33/22 , H01S5/0202 , H01S5/0425 , H01S5/22 , H01S5/32341
摘要： Provided is a method of manufacturing semiconductor light emitting devices including: forming light emitting structures by sequentially depositing a first material layer, an active layer and a second material layer; forming the roughness pattern on a region of the bottom of a substrate except at least a cleaving region for forming cleaving planes; and forming n-electrodes.
摘要翻译：提供一种制造半导体发光器件的方法，包括：通过顺序地沉积第一材料层，有源层和第二材料层来形成发光结构; 在至少一个用于形成裂开面的切割区域的基板的底部的区域上形成粗糙图案; 并形成n电极。

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