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    • 1. 发明申请
    • Semiconductor laser diode array
    • 半导体激光二极管阵列
    • US20070237200A1
    • 2007-10-11
    • US11513053
    • 2006-08-31
    • Han-youl RyuOk-hyun NamKyoung-ho Ha
    • Han-youl RyuOk-hyun NamKyoung-ho Ha
    • H01S5/00
    • H01S5/405B82Y20/00H01S5/0224H01S5/042H01S5/0425H01S5/22H01S5/34333
    • A semiconductor laser diode array is provided. The semiconductor laser diode array includes: a lower semiconductor laser diode chip having a dual structure including a lower substrate, a first laser generating region disposed on the lower substrate, and a second laser generating region disposed on the lower substrate and separated from the first laser generating region; an upper semiconductor laser diode chip having a dual structure including an upper substrate, a third laser generating region disposed on the upper substrate, and a fourth laser generating region disposed on the upper substrate and separated from the third laser generating region; and an electrode unit electrically connecting the first through fourth laser generating regions to the outside. The first and second laser generating regions are vertically bonded to the third and fourth laser generating regions, respectively, so that the first through fourth light-emitting points in the first through fourth laser generating regions from which laser beams are emitted are arranged in a two-dimensional fashion.
    • 提供半导体激光二极管阵列。 半导体激光二极管阵列包括:具有双结构的下半导体激光二极管芯片,包括下基板,设置在下基板上的第一激光产生区域和设置在下基板上并与第一激光器分离的第二激光产生区域 生成区域 具有双重结构的上半导体激光二极管芯片,包括上基板,设置在上基板上的第三激光产生区域和设置在上基板上并与第三激光产生区域分离的第四激光发生区域; 以及将第一至第四激光产生区域电连接到外部的电极单元。 第一和第二激光产生区域分别垂直地结合到第三和第四激光产生区域,使得发射激光束的第一至第四激光产生区域中的第一至第四发光点被布置成两个 维度时尚。
    • 2. 发明授权
    • Semiconductor laser diode array
    • 半导体激光二极管阵列
    • US07616674B2
    • 2009-11-10
    • US11513053
    • 2006-08-31
    • Han-youl RyuOk-hyun NamKyoung-ho Ha
    • Han-youl RyuOk-hyun NamKyoung-ho Ha
    • H01S5/40
    • H01S5/405B82Y20/00H01S5/0224H01S5/042H01S5/0425H01S5/22H01S5/34333
    • A semiconductor laser diode array is provided. The semiconductor laser diode array includes: a lower semiconductor laser diode chip having a dual structure including a lower substrate, a first laser generating region disposed on the lower substrate, and a second laser generating region disposed on the lower substrate and separated from the first laser generating region; an upper semiconductor laser diode chip having a dual structure including an upper substrate, a third laser generating region disposed on the upper substrate, and a fourth laser generating region disposed on the upper substrate and separated from the third laser generating region; and an electrode unit electrically connecting the first through fourth laser generating regions to the outside. The first and second laser generating regions are vertically bonded to the third and fourth laser generating regions, respectively, so that the first through fourth light-emitting points in the first through fourth laser generating regions from which laser beams are emitted are arranged in a two-dimensional fashion.
    • 提供半导体激光二极管阵列。 半导体激光二极管阵列包括:具有双结构的下半导体激光二极管芯片,包括下基板,设置在下基板上的第一激光产生区域和设置在下基板上并与第一激光器分离的第二激光产生区域 生成区域 具有双重结构的上半导体激光二极管芯片,包括上基板,设置在上基板上的第三激光产生区域和设置在上基板上并与第三激光产生区域分离的第四激光发生区域; 以及将第一至第四激光产生区域电连接到外部的电极单元。 第一和第二激光产生区域分别垂直地结合到第三和第四激光产生区域,使得发射激光束的第一至第四激光产生区域中的第一至第四发光点被布置成两个 维度时尚。