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1. 发明申请

US20070237200A1 Semiconductor laser diode array 失效
标题翻译：半导体激光二极管阵列
公开(公告)号：US20070237200A1
公开(公告)日：2007-10-11
申请号：US11513053
申请日：2006-08-31
申请人： Han-youl Ryu , Ok-hyun Nam , Kyoung-ho Ha
发明人： Han-youl Ryu , Ok-hyun Nam , Kyoung-ho Ha
IPC分类号： H01S5/00
CPC分类号： H01S5/405 , B82Y20/00 , H01S5/0224 , H01S5/042 , H01S5/0425 , H01S5/22 , H01S5/34333
摘要： A semiconductor laser diode array is provided. The semiconductor laser diode array includes: a lower semiconductor laser diode chip having a dual structure including a lower substrate, a first laser generating region disposed on the lower substrate, and a second laser generating region disposed on the lower substrate and separated from the first laser generating region; an upper semiconductor laser diode chip having a dual structure including an upper substrate, a third laser generating region disposed on the upper substrate, and a fourth laser generating region disposed on the upper substrate and separated from the third laser generating region; and an electrode unit electrically connecting the first through fourth laser generating regions to the outside. The first and second laser generating regions are vertically bonded to the third and fourth laser generating regions, respectively, so that the first through fourth light-emitting points in the first through fourth laser generating regions from which laser beams are emitted are arranged in a two-dimensional fashion.
摘要翻译：提供半导体激光二极管阵列。半导体激光二极管阵列包括：具有双结构的下半导体激光二极管芯片，包括下基板，设置在下基板上的第一激光产生区域和设置在下基板上并与第一激光器分离的第二激光产生区域生成区域具有双重结构的上半导体激光二极管芯片，包括上基板，设置在上基板上的第三激光产生区域和设置在上基板上并与第三激光产生区域分离的第四激光发生区域; 以及将第一至第四激光产生区域电连接到外部的电极单元。第一和第二激光产生区域分别垂直地结合到第三和第四激光产生区域，使得发射激光束的第一至第四激光产生区域中的第一至第四发光点被布置成两个维度时尚。

2. 发明授权

US07616674B2 Semiconductor laser diode array 失效
标题翻译：半导体激光二极管阵列
公开(公告)号：US07616674B2
公开(公告)日：2009-11-10
申请号：US11513053
申请日：2006-08-31
申请人： Han-youl Ryu , Ok-hyun Nam , Kyoung-ho Ha
发明人： Han-youl Ryu , Ok-hyun Nam , Kyoung-ho Ha
IPC分类号： H01S5/40
CPC分类号： H01S5/405 , B82Y20/00 , H01S5/0224 , H01S5/042 , H01S5/0425 , H01S5/22 , H01S5/34333
摘要： A semiconductor laser diode array is provided. The semiconductor laser diode array includes: a lower semiconductor laser diode chip having a dual structure including a lower substrate, a first laser generating region disposed on the lower substrate, and a second laser generating region disposed on the lower substrate and separated from the first laser generating region; an upper semiconductor laser diode chip having a dual structure including an upper substrate, a third laser generating region disposed on the upper substrate, and a fourth laser generating region disposed on the upper substrate and separated from the third laser generating region; and an electrode unit electrically connecting the first through fourth laser generating regions to the outside. The first and second laser generating regions are vertically bonded to the third and fourth laser generating regions, respectively, so that the first through fourth light-emitting points in the first through fourth laser generating regions from which laser beams are emitted are arranged in a two-dimensional fashion.
摘要翻译：提供半导体激光二极管阵列。半导体激光二极管阵列包括：具有双结构的下半导体激光二极管芯片，包括下基板，设置在下基板上的第一激光产生区域和设置在下基板上并与第一激光器分离的第二激光产生区域生成区域具有双重结构的上半导体激光二极管芯片，包括上基板，设置在上基板上的第三激光产生区域和设置在上基板上并与第三激光产生区域分离的第四激光发生区域; 以及将第一至第四激光产生区域电连接到外部的电极单元。第一和第二激光产生区域分别垂直地结合到第三和第四激光产生区域，使得发射激光束的第一至第四激光产生区域中的第一至第四发光点被布置成两个维度时尚。

3. 发明申请

US20060093001A1 Multiple-wavelength laser diode and method of fabricating the same 审中-公开
标题翻译：多波长激光二极管及其制造方法
公开(公告)号：US20060093001A1
公开(公告)日：2006-05-04
申请号：US11220790
申请日：2005-09-08
申请人： Han-youl Ryu , Ok-hyun Nam , Kyoung-ho Ha
发明人： Han-youl Ryu , Ok-hyun Nam , Kyoung-ho Ha
IPC分类号： H01S5/00
CPC分类号： H01S5/4043 , H01S5/32325 , H01S5/32341 , H01S5/4087
摘要： A multiple-wavelength laser diode (LD) and method of fabricating the same are provided. The multiple-wavelength LD includes at least three LDs, which are sequentially stacked and aligned such that centers of emission points of the at least three LDs form a line.
摘要翻译：提供了一种多波长激光二极管（LD）及其制造方法。多波长LD包括至少三个LD，其顺序地堆叠和对准，使得至少三个LD的发射点的中心形成一条线。

4. 发明申请

US20060093000A1 Multiple-wavelength laser diode and method of fabricating the same 审中-公开
标题翻译：多波长激光二极管及其制造方法
公开(公告)号：US20060093000A1
公开(公告)日：2006-05-04
申请号：US11220789
申请日：2005-09-08
申请人： Ok-hyun Nam , Kyoung-ho Ha , Han-youl Ryu
发明人： Ok-hyun Nam , Kyoung-ho Ha , Han-youl Ryu
IPC分类号： H01S5/00
CPC分类号： H01S5/4031 , H01S5/0224 , H01S5/02268 , H01S5/32316 , H01S5/32325 , H01S5/32341 , H01S5/4087
摘要： A multiple-wavelength laser diode (LD) and method of fabricating the same are provided. The multiple-wavelength LD includes at least three LDs, which are bonded onto a plate and aligned such that centers of emission points of the three LDs form a line. Also, the multiple-wavelength LD includes a first LD, an insulating layer disposed on a substrate that extends from the first LD, and at least a second LD and a third LD bonded onto the insulating layer. The first, second, and third LDs are aligned such that centers of emission points are aligned.
摘要翻译：提供了一种多波长激光二极管（LD）及其制造方法。多波长LD包括至少三个LD，其被结合到板上并对齐，使得三个LD的发射点的中心形成一条线。此外，多波长LD包括第一LD，设置在从第一LD延伸的基板上的绝缘层，以及键合到绝缘层上的至少第二LD和第三LD。第一，第二和第三LD对准，使发射点的中心对准。

5. 发明授权

US08120044B2 Multi-chips with an optical interconnection unit 有权
标题翻译：具有光互连单元的多芯片
公开(公告)号：US08120044B2
公开(公告)日：2012-02-21
申请号：US12081277
申请日：2008-04-14
申请人： Soo-haeng Cho , Kyoung-ho Ha , Han-youl Ryu , Sung-dong Suh , Seong-gu Kim , Bok-ki Min
发明人： Soo-haeng Cho , Kyoung-ho Ha , Han-youl Ryu , Sung-dong Suh , Seong-gu Kim , Bok-ki Min
IPC分类号： H01L27/15 , H01L29/16 , H01L31/12 , H01L33/00
CPC分类号： G02B6/43 , H01L2224/05554 , H01L2224/48137 , H01L2224/49175 , H01L2924/00
摘要： A multi-chip having an optical interconnection unit is provided. The multi-chip having an optical interconnection unit includes a plurality of silicon chips sequentially stacked, a plurality of optical device arrays on a side of each of the plurality of the silicon chips such that the optical device arrays correspond to each other and a wiring electrically connecting the silicon chip and the optical device array attached to a side of the silicon chip, wherein the corresponding optical device arrays forms an optical connection unit by transmitting and receiving an optical signal between the corresponding optical device arrays in different layers. Each of the optical device arrays includes at least one of a light emitting device and a light receiving device.
摘要翻译：提供具有光互连单元的多芯片。具有光学互连单元的多芯片包括顺序层叠的多个硅芯片，多个硅芯片中的每一个的一侧的多个光学器件阵列，使得光学器件阵列彼此对应，并且布线电连接连接硅芯片和安装在硅芯片一侧的光学器件阵列，其中相应的光学器件阵列通过在不同层中的相应的光学器件阵列之间发送和接收光学信号来形成光学连接单元。每个光学器件阵列包括发光器件和光接收器件中的至少一个。

6. 发明授权

US07693200B2 Semiconductor laser diode having ridge 有权
标题翻译：具有脊的半导体激光二极管
公开(公告)号：US07693200B2
公开(公告)日：2010-04-06
申请号：US11657672
申请日：2007-01-25
申请人： Jung-hye Chae , Jong-in Shim , Kyoung-ho Ha , Kyu-sang Kim , Han-youl Ryu
发明人： Jung-hye Chae , Jong-in Shim , Kyoung-ho Ha , Kyu-sang Kim , Han-youl Ryu
IPC分类号： H01S5/00
CPC分类号： H01S5/22 , B82Y20/00 , H01S5/0425 , H01S5/34333
摘要： A semiconductor laser diode including a substrate, and a first semiconductor layer, an active layer, a second semiconductor layer and an electrode sequentially formed on the substrate is provided. In the semiconductor laser diode, the second semiconductor layer has a ridge and the electrode is formed on the ridge of the second semiconductor layer at a width which is less than the width of the ridge.
摘要翻译：提供一种半导体激光二极管，其包括基板，以及顺序地形成在基板上的第一半导体层，有源层，第二半导体层和电极。在半导体激光二极管中，第二半导体层具有脊，电极形成在第二半导体层的脊上，宽度小于脊的宽度。

7. 发明申请

US20070081570A1 Side light emitting type semiconductor laser diode having dielectric layer formed on active layer 失效
标题翻译：具有形成在有源层上的电介质层的侧面发光型半导体激光二极管
公开(公告)号：US20070081570A1
公开(公告)日：2007-04-12
申请号：US11545546
申请日：2006-10-11
申请人： Han-youl Ryu , Kyoung-ho Ha
发明人： Han-youl Ryu , Kyoung-ho Ha
IPC分类号： H01S5/00
CPC分类号： H01S5/2231 , B82Y20/00 , H01S5/0422 , H01S5/0425 , H01S5/0655 , H01S5/2063 , H01S5/2222 , H01S5/24 , H01S5/34333 , H01S2301/173
摘要： Provided is a side light emitting type semiconductor laser diode in which a dielectric layer is formed on an active layer. The side light emitting type semiconductor laser diode includes an n-clad layer, an n-light guide layer, an active layer and a p-light guide layer sequentially formed on a substrate, and a dielectric layer with a ridge structure formed on the p-light guide layer.
摘要翻译：提供一种在有源层上形成电介质层的侧面发光型半导体激光二极管。侧面发光型半导体激光二极管包括依次形成在基板上的n包覆层，n导光层，有源层和p导光层，以及在p上形成有脊结构的电介质层指导层。

8. 发明申请

US20120087673A1 OPTICAL INTERCONNECTION SYSTEM FOR TRANSMITTING AND RECEIVING A THREE-LEVEL SIGNAL AND METHOD OF OPERATING THE SAME 审中-公开
标题翻译：用于发送和接收三级信号的光学互连系统及其操作方法
公开(公告)号：US20120087673A1
公开(公告)日：2012-04-12
申请号：US13323105
申请日：2011-12-12
申请人： Han-youl Ryu , Sung-dong Suh , Kyoung-ho Ha , Seong-gu Kim
发明人： Han-youl Ryu , Sung-dong Suh , Kyoung-ho Ha , Seong-gu Kim
IPC分类号： H04B10/00
CPC分类号： H04B10/2504
摘要： Provided is an optical interconnection system that transmits and receives a three-level signal. The optical interconnection system includes a first and a second optical interconnection device that transmits and receives a two-level signal, and a synthesizer that outputs a three-level signal by synthesizing signals from the first and second optical interconnection devices. The optical interconnection system may transmit and receive a three-level signal while using an optical interconnection device that interconnects a two-level signal.
摘要翻译：提供了发送和接收三电平信号的光互连系统。光互连系统包括发送和接收两电平信号的第一和第二光学互连装置，以及通过合成来自第一和第二光学互连装置的信号输出三电平信号的合成器。光互连系统可以在使用互连两级信号的光互连装置的同时发送和接收三电平信号。

9. 发明授权

US07826505B2 III-V group GaN-based compound semiconductor device 有权
标题翻译： III-V族GaN基化合物半导体器件
公开(公告)号：US07826505B2
公开(公告)日：2010-11-02
申请号：US11445220
申请日：2006-06-02
申请人： Joong-kon Son , Kyoung-ho Ha , Han-youl Ryu
发明人： Joong-kon Son , Kyoung-ho Ha , Han-youl Ryu
IPC分类号： H01S5/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/04 , H01L33/06 , H01L33/32 , H01S5/0213 , H01S5/2004 , H01S5/2013 , H01S5/22 , H01S5/3213 , H01S5/3216
摘要： A III-V Group GaN-based compound semiconductor device with an improved structure having low current comsumption, high optical output, and a long lifetime is provided. The III-V Group GaN-based compound semiconductor device includes an active layer and a first clad layer and a second clad layer, wherein at least one of the first clad layer and the second clad layer has a superlattice structure formed of a plurality of alternating AlxGa(1-x)N layers (0
摘要翻译：提供了具有低电流消耗，高光输出和长寿命的改进结构的III-V族GaN基化合物半导体器件。 III-V族GaN基化合物半导体器件包括有源层和第一覆盖层和第二覆盖层，其中，第一覆盖层和第二覆盖层中的至少一个具有由多个交替形成的超晶格结构 Al x Ga（1-x）N层（0

10. 发明申请

US20080102546A1 Method of manufacturing semiconductor laser device including light shield plate 失效
标题翻译：制造包括遮光板的半导体激光装置的方法
公开(公告)号：US20080102546A1
公开(公告)日：2008-05-01
申请号：US11889121
申请日：2007-08-09
申请人： Han-youl Ryu , Kyoung-ho Ha , Youn-joon Sung
发明人： Han-youl Ryu , Kyoung-ho Ha , Youn-joon Sung
IPC分类号： H01L33/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0213 , H01S5/0286 , H01S5/2027 , H01S5/22 , H01S2301/18
摘要： Provided is a method of manufacturing a semiconductor laser device having a light shield film comprising: forming a light emission structure by depositing a first clad layer, an active layer and a second clad layer on a substrate; depositing a light shield film and a protection film on the light emission face of the light emission structure; removing the light shield film corresponding to an area of the light emission face of the light emission structure including and above the first clad layer; and removing the protection layer.
摘要翻译：提供一种制造具有遮光膜的半导体激光器件的方法，包括：通过在衬底上沉积第一覆盖层，有源层和第二覆盖层来形成发光结构; 在发光结构的发光面上沉积遮光膜和保护膜; 去除与包括第一包层以上的发光结构的发光面的区域相对应的遮光膜; 并去除保护层。

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