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101. 发明授权

US06939434B2 Externally excited torroidal plasma source with magnetic control of ion distribution 失效
标题翻译：外部激发的环形等离子体源与磁控制的离子分布
公开(公告)号：US06939434B2
公开(公告)日：2005-09-06
申请号：US10164327
申请日：2002-06-05
申请人： Kenneth S. Collins , Hiroji Hanawa , Yan Ye , Kartik Ramaswamy , Andrew Nguyen , Michael S. Barnes , Huong Thanh Nguyen
发明人： Kenneth S. Collins , Hiroji Hanawa , Yan Ye , Kartik Ramaswamy , Andrew Nguyen , Michael S. Barnes , Huong Thanh Nguyen
IPC分类号： H01J37/32 , C23C16/00 , C23F1/00
CPC分类号： H01J37/321 , H01J37/32082 , H01J37/32412
摘要： A plasma reactor is described that includes a vacuum chamber defined by an enclosure including a side wall and a workpiece support pedestal within the chamber defining a processing region overlying said pedestal. The chamber has at least a first pair of ports near opposing sides of said processing region and a first external reentrant tube is connected at respective ends thereof to the pair of ports. The reactor further includes a process gas injection apparatus (such as a gas distribution plate) and an RF power applicator coupled to the reentrant tube for applying plasma source power to process gases within the tube to produce a reentrant torroidal plasma current through the first tube and across said processing region. A magnet controls radial distribution of plasma ion density in the processing region, the magnet having an elongate pole piece defining a pole piece axis intersecting the processing region.
摘要翻译：描述了一种等离子体反应器，其包括由壳体限定的真空室，所述外壳包括在所述腔室内的侧壁和工件支撑基座，其限定覆盖所述基座的处理区域。所述腔室具有在所述处理区域的相对侧附近的至少第一对端口，并且第一外部可折入管的相应端部连接到所述一对端口。反应器还包括工艺气体注入装置（例如气体分配板）和耦合到可折入管的RF功率施加器，其用于施加等离子体源功率以处理管内的气体，以产生通过第一管的可重入环形等离子体电流，跨越所述处理区域。磁体控制处理区域中的等离子体离子密度的径向分布，磁体具有限定与加工区域相交的极片轴线的细长极片。

102. 发明授权

US06894245B2 Merie plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression 有权
标题翻译： Merie等离子体反应器，其具有用电弧抑制调谐到等离子体的架空RF电极
公开(公告)号：US06894245B2
公开(公告)日：2005-05-17
申请号：US10007367
申请日：2001-10-22
申请人： Daniel J. Hoffman , Yan Ye , Dan Katz , Douglas A. Buchberger, Jr. , Xiaoye Zhao , Kang-Lie Chiang , Robert B. Hagen , Matthew L. Miller
发明人： Daniel J. Hoffman , Yan Ye , Dan Katz , Douglas A. Buchberger, Jr. , Xiaoye Zhao , Kang-Lie Chiang , Robert B. Hagen , Matthew L. Miller
IPC分类号： H05H1/46 , H01J37/32 , H01L21/205 , H01L21/3065 , B23K10/00
CPC分类号： H01J37/3244 , H01J37/32082 , H01J37/32183 , H01J37/3266
摘要： A plasma reactor for processing a semiconductor workpiece, includes a reactor chamber having a chamber wall and containing a workpiece support for holding the semiconductor support, the electrode comprising a portion of the chamber wall, an RF power generator for supplying power at a frequency of the generator to the overhead electrode and capable of maintaining a plasma within the chamber at a desired plasma ion density level. The overhead electrode has a capacitance such that the overhead electrode and the plasma formed in the chamber at the desired plasma ion density resonate together at an electrode-plasma resonant frequency, the frequency of the generator being at least near the electrode-plasma resonant frequency. The reactor further includes a set of MERIE magnets surrounding the plasma process area overlying the wafer surface that produce a slowly circulating magnetic field which stirs the plasma to improve plasma ion density distribution uniformity.
摘要翻译：一种用于处理半导体工件的等离子体反应器，包括具有室壁并具有用于保持半导体支撑件的工件支撑件的反应室，所述电极包括室壁的一部分，RF发电机，用于以发电机到顶置电极并且能够将室内的等离子体保持在期望的等离子体离子密度水平。顶置电极具有这样的电容，使得在期望的等离子体离子密度下在室中形成的顶置电极和等离子体以电极 - 等离子体共振频率共振，发电机的频率至少接近电极 - 等离子体共振频率。反应器还包括围绕晶片表面的等离子体处理区域的一组MERIE磁体，其产生缓慢循环的磁场，其搅动等离子体以改善等离子体离子密度分布均匀性。

103. 发明授权

US06853141B2 Capacitively coupled plasma reactor with magnetic plasma control 有权
标题翻译：具有磁等离子体控制的电容耦合等离子体反应器
公开(公告)号：US06853141B2
公开(公告)日：2005-02-08
申请号：US10192271
申请日：2002-07-09
申请人： Daniel J. Hoffman , Matthew L. Miller , Jang Gyoo Yang , Heeyeop Chae , Michael Barnes , Tetsuya Ishikawa , Yan Ye
发明人： Daniel J. Hoffman , Matthew L. Miller , Jang Gyoo Yang , Heeyeop Chae , Michael Barnes , Tetsuya Ishikawa , Yan Ye
IPC分类号： H05H1/46 , H01J27/16 , H01J37/08 , H01J37/32 , H01L21/3065 , H01J7/24
CPC分类号： H01J37/32091 , H01J37/3244 , H01J37/32623 , H01J37/3266
摘要： A plasma reactor includes a vacuum enclosure including a side wall and a ceiling defining a vacuum chamber, and a workpiece support within the chamber and facing the ceiling for supporting a planar workpiece, the workpiece support and the ceiling together defining a processing region between the workpiece support and the ceiling. Process gas inlets furnish a process gas into the chamber. A plasma source power electrode is connected to an RF power generator for capacitively coupling plasma source power into the chamber for maintaining a plasma within the chamber. The reactor further includes at least a first overhead solenoidal electromagnet adjacent the ceiling, the overhead solenoidal electromagnet, the ceiling, the sidewall and the workpiece support being located along a common axis of symmetry. A current source is connected to the first solenoidal electromagnet and furnishes a first electric current in the first solenoidal electromagnet whereby to generate within the chamber a magnetic field which is a function of the first electric current, the first electric current having a value such that the magnetic field increases uniformity of plasma ion density radial distribution about the axis of symmetry near a surface of the workpiece support.
摘要翻译：等离子体反应器包括真空外壳，其包括限定真空室的侧壁和顶板，以及腔室内的工件支撑件，并面向天花板以支撑平面工件，工件支撑件和天花板一起限定了工件之间的加工区域支持和天花板。工艺气体入口将工艺气体提供到腔室中。等离子体源功率电极连接到RF功率发生器，用于将等离子体源功率电容耦合到腔室中，以在腔室内维持等离子体。所述反应器还包括至少邻近所述天花板的顶部螺线管电磁体，所述架空螺线管电磁体，所述天花板，所述侧壁和所述工件支撑件沿着公共对称轴线定位。电流源连接到第一螺线管电磁体并且在第一螺线管电磁体中提供第一电流，从而在腔室内产生与第一电流有关的磁场，第一电流具有使得磁场增加等离子体离子密度在工件支撑表面附近的对称轴的径向分布的均匀性。

104. 发明授权

US06551446B1 Externally excited torroidal plasma source with a gas distribution plate 失效
标题翻译：外部激发的环形等离子体源与气体分配板
公开(公告)号：US06551446B1
公开(公告)日：2003-04-22
申请号：US09637174
申请日：2000-08-11
申请人： Hiroji Hanawa , Yan Ye , Kenneth S. Collins , Kartik Ramaswamy , Andrew Nguyen , Tsutomu Tanaka
发明人： Hiroji Hanawa , Yan Ye , Kenneth S. Collins , Kartik Ramaswamy , Andrew Nguyen , Tsutomu Tanaka
IPC分类号： C23C1600
CPC分类号： H01J37/321 , H01J37/32082
摘要： A plasma reactor for processing a workpiece includes a vacuum enclosure, including a wall, defining a vacuum chamber, the vacuum chamber having a main chamber portion on one side of the wall and a plenum on another side of the wall, the plenum communicating with the chamber portion through at least one opening in the wall, a workpiece support within the main chamber portion and facing the wall. A gas distribution plate is adjacent the wall and faces the workpiece support and is coupled to a reactive process gas supply for injecting reactive process gases directly into a process region adjacent the workpiece support. A gas injection port at the plenum is coupled to a diluent gas supply for injecting diluent gases into the plenum. A coil antenna adapted to accept RF power is inductively coupled to the interior of said plenum, and is capable of maintaining a plasma in a reentrant path through the plenum and across the process region.
摘要翻译：用于处理工件的等离子体反应器包括真空封壳，其包括限定真空室的壁，所述真空室具有在壁的一侧上的主室部分和在壁的另一侧上的增压室，室部分通过壁中的至少一个开口，主室部分内的工件支撑件并面向壁。气体分配板邻近壁并且面向工件支撑件并且与反应性工艺气体供应件相连接，用于将反应性工艺气体直接注入到与工件支撑件相邻的工艺区域中。增压室处的气体注入口与稀释气体供应装置连接，用于将稀释气体注入气室。适于接收RF功率的线圈天线感应耦合到所述增压室的内部，并且能够将等离子体维持在通过充气室并且跨越过程区域的折返路径中。

105. 发明授权

US06547977B1 Method for etching low k dielectrics 失效
标题翻译：蚀刻低k电介质的方法
公开(公告)号：US06547977B1
公开(公告)日：2003-04-15
申请号：US09610915
申请日：2000-07-05
申请人： Chun Yan , Gary C. Hsueh , Yan Ye , Diana Xiaobing Ma
发明人： Chun Yan , Gary C. Hsueh , Yan Ye , Diana Xiaobing Ma
IPC分类号： C03C1500
CPC分类号： H01L21/31138
摘要： The present disclosure pertains to a method for plasma etching of low k materials, particularly polymeric-based low k materials. Preferably the polymeric-based materials are organic-based materials. The method employs an etchant plasma where the major etchant species are generated from a halogen other than fluorine and oxygen. The preferred halogen is chlorine. The volumetric (flow rate) ratio of the halogen:oxygen in the plasma source gas ranges from about 1:20 to about 20:1. The atomic ratio of the halogen:oxygen preferably falls within the range from about 1:20 to about 20:1. When the halogen is chlorine, the preferred atomic ratio of chlorine:oxygen ranges from about 1:10 to about 5:1. When this atomic ratio of chlorine:oxygen is used, the etch selectivity for the low k material over adjacent oxygen-comprising or nitrogen-comprising layers is advantageous, typically in excess of about 10:1. The plasma source gas may contain additives in an amount of 15% or less by volume which are designed to improve selectivity for the low k dielectric over an adjacent material, to provide a better etch profile, or to provide better critical dimension control, for example. When the additive contains fluorine, the amount of the additive is such that residual chlorine on the etched surface of the low k material comprises less than 5 atomic %.
摘要翻译：本公开涉及用于等离子体蚀刻低k材料，特别是基于聚合物的低k材料的方法。优选地，基于聚合物的材料是有机基材料。该方法采用蚀刻剂等离子体，其中主要蚀刻剂物质由除氟和氧之外的卤素产生。优选的卤素是氯。等离子体源气体中的卤素：氧的体积（流速）比为约1:20至约20:1。卤素：氧的原子比优选在约1:20至约20:1的范围内。当卤素为氯时，氯：氧的优选原子比范围为约1:10至约5:1。当使用氯原子的氧原子比时，低k材料在相邻的含氧或含氮层上的蚀刻选择性是有利的，通常超过约10:1。等离子体源气体可以含有体积的15％或更少的添加剂，其被设计成提高相邻材料上的低k电介质的选择性，以提供更好的蚀刻轮廓，或提供更好的临界尺寸控制，例如。当添加剂含氟时，添加剂的量使得低k材料的蚀刻表面上的残留氯含量小于5原子％。

106. 发明授权

US06453842B1 Externally excited torroidal plasma source using a gas distribution plate 失效
标题翻译：使用气体分配板的外部激发的环形等离子体源
公开(公告)号：US06453842B1
公开(公告)日：2002-09-24
申请号：US09636700
申请日：2000-08-11
申请人： Hiroji Hanawa , Yan Ye , Kenneth S Collins , Kartik Ramaswamy , Andrew Nguyen , Tsutomu Tanaka
发明人： Hiroji Hanawa , Yan Ye , Kenneth S Collins , Kartik Ramaswamy , Andrew Nguyen , Tsutomu Tanaka
IPC分类号： C23C1600
CPC分类号： H01J37/321 , H01J37/32082
摘要： A plasma chamber defining an evacuated interior environment for processing a substrate includes a substrate support, an apertured gas distribution plate in spaced facing relationship to the substrate support, and adapted to flow process gases into the chamber interior environment adjacent the substrate support, the gas distribution plate and substrate support defining a substrate processing region therebetween, a hollow reentrant conduit having respective ends opening into the substrate processing region on opposite sides of the gas distribution plate, with the interior of said conduit sharing the interior environment. The conduit is adapted to accept irradiation of processing gases within the conduit to sustain a plasma in a path extending around the conduit interior and across the substrate processing region within the chamber interior environment.
摘要翻译：限定用于处理衬底的抽空的内部环境的等离子体室包括衬底支撑件，与衬底支撑件间隔开的面对关系的多孔气体分配板，并且适于将工艺气体流入邻近衬底支撑件的腔室内部环境中，气体分布板和基板支撑件，其间限定了其间的基板加工区域，中空折痕导管，其相应的端部通向气体分配板的相对侧上的基板处理区域，所述导管的内部共享内部环境。导管适于接受管道内的处理气体的照射，以在围绕导管内部延伸并且在腔室内部环境内的衬底处理区域上延伸的路径中维持等离子体。

107. 发明授权

US06410449B1 Method of processing a workpiece using an externally excited torroidal plasma source 失效
标题翻译：使用外部激发的环形等离子体源处理工件的方法
公开(公告)号：US06410449B1
公开(公告)日：2002-06-25
申请号：US09636436
申请日：2000-08-11
申请人： Hiroji Hanawa , Yan Ye , Kenneth S Collins , Kartik Ramaswamy , Andrew Nguyen , Tsutomu Tanaka
发明人： Hiroji Hanawa , Yan Ye , Kenneth S Collins , Kartik Ramaswamy , Andrew Nguyen , Tsutomu Tanaka
IPC分类号： H01L21302
CPC分类号： H01J37/321 , H01J37/32082
摘要： A method of processing a workpiece in a plasma reactor includes establishing a torroidal path for a plasma current to flow that passes near and transverse to the surface of said workpiece, maintaining a plasma current in the torroidal path by applying RF power to a portion of the torroidal path away from the surface of the workpiece, and increasing the ion density of the plasma current in the vicinity of the workpiece by constricting the area of a portion of the torroidal path overlying the workpiece.
摘要翻译：在等离子体反应器中处理工件的方法包括建立用于等离子体电流的环形路径，其流过靠近和横向于所述工件的表面的流动，通过将RF功率施加到环形路径的一部分来维持在环形路径中的等离子体电流环形路径远离工件的表面，并且通过收缩覆盖工件的一部分环形路径的面积来增加工件附近的等离子体电流的离子密度。

108. 发明授权

US06352081B1 Method of cleaning a semiconductor device processing chamber after a copper etch process 失效
标题翻译：在铜蚀刻工艺之后清洁半导体器件处理室的方法
公开(公告)号：US06352081B1
公开(公告)日：2002-03-05
申请号：US09350802
申请日：1999-07-09
申请人： Danny Chien Lu , Allen Zhao , Peter Hsieh , Hong Shih , Li Xu , Yan Ye
发明人： Danny Chien Lu , Allen Zhao , Peter Hsieh , Hong Shih , Li Xu , Yan Ye
IPC分类号： B08B900
CPC分类号： H01L21/67028 , Y10S438/905
摘要： The present invention is a method for removing deposited etch byproducts from surfaces of a semiconductor processing chamber after a copper etch process. The method of the invention comprises the following general steps: (a) an oxidation step, in which interior surfaces of the processing chamber are contacted with an oxidizing plasma; (b) a first non-plasma cleaning step, in which interior surfaces of the processing chamber are contacted with an H+hfac-comprising gas; and (c) a second cleaning step, in which interior surfaces of the processing chamber are contacted with a plasma containing reactive fluorine species, whereby at least a portion of the copper etch byproducts remaining after step (b) are volatilized into gaseous species, which are removed from the processing chamber. The method of the invention is preferably performed at a chamber wall temperature of at least 150° C. in order to achieve optimum cleaning of the chamber at the chamber operating pressures typically used during the cleaning process. The dry cleaning method of the invention can be performed between wafer processing runs without opening the processing chamber, thereby minimizing potential contamination to the chamber as well as chamber downtime.
摘要翻译：本发明是在铜蚀刻工艺之后从半导体处理室的表面去除沉积的蚀刻副产物的方法。本发明的方法包括以下一般步骤：（a）氧化步骤，其中处理室的内表面与氧化等离子体接触; （b）第一非等离子体清洗步骤，其中处理室的内表面与含H + hfac的气体接触; 和（c）第二清洁步骤，其中处理室的内表面与含有反应性氟物质的等离子体接触，由此在步骤（b）之后残留的铜蚀刻副产物的至少一部分挥发成气态物质，其中从处理室中取出。本发明的方法优选在至少150℃的室壁温度下进行，以便在清洁过程中通常使用的室的操作压力下实现室的最佳清洁。本发明的干式清洗方法可以在晶片处理运行之间进行，而不会打开处理室，从而最小化对室的潜在污染以及室停机时间。

109. 发明授权

US06277251B1 Apparatus and method for shielding a dielectric member to allow for stable power transmission into a plasma processing chamber 失效
标题翻译：用于屏蔽电介质构件以允许稳定的电力传输到等离子体处理室中的装置和方法
公开(公告)号：US06277251B1
公开(公告)日：2001-08-21
申请号：US09515695
申请日：2000-02-29
申请人： Jeng H. Hwang , Steve S. Y. Mak , Yan Ye
发明人： Jeng H. Hwang , Steve S. Y. Mak , Yan Ye
IPC分类号： C23C1434
CPC分类号： H01J37/32504
摘要： An assembly for allowing stable power transmission into a plasma processing chamber comprising a dielectric member; and at least one material deposition support assembly secured to the dielectric member for receiving and supporting the deposition of materials during processing of a substrate and a chamber having a controlled environment and containing a plasma of a processing gas. A plasma reactor for processing substrates having a reactor chamber including a chamber sidewall and a dielectric window supported by the chamber sidewall. A plurality of deposition support members is coupled to an inside surface of the dielectric window for receiving and supporting a deposition of materials during processing of substrates. In an alternative embodiment of the invention, the plurality of deposition support members is connected to a liner assembly instead of to the dielectric window. The liner assembly is supported by the chamber sidewall. A pedestal is disposed in the reactor chamber for supporting substrates, such as semiconductor wafers, in the reacting chamber. The plasma reactor also includes a processing power source, a processing power gas-introducing assembly for introducing processing gas into the reactor chamber, and a processing power-transmitting member for transmitting power into the reactor interior to aid in sustaining a plasma from the processing gas within the reacting chamber. A method for adjusting the density of plasma contained in a chamber wherein substrates are to be processed. A method of processing (e.g. etching or depositing) a metal layer disposed on a substrate.
摘要翻译：一种用于允许稳定的电力传输到包括电介质构件的等离子体处理室中的组件; 以及固定到电介质构件的至少一个材料沉积支撑组件，用于在衬底和具有受控环境的腔室的处理过程中接收和支撑材料的沉积并且包含处理气体的等离子体。一种用于处理基板的等离子体反应器，其具有包括室侧壁和由室侧壁支撑的电介质窗的反应室。多个沉积支撑构件联接到电介质窗口的内表面，用于在衬底的处理期间接收和支撑材料的沉积。在本发明的替代实施例中，多个沉积支撑构件连接到衬垫组件而不是电介质窗口。衬套组件由腔室侧壁支撑。基座设置在反应室中，用于在反应室中支撑诸如半导体晶片的衬底。等离子体反应器还包括处理电源，用于将处理气体引入反应室的处理能力气体引入组件和用于将动力传送到反应器内部以帮助维持来自处理气体的等离子体的处理能力传递部件在反应室内。一种用于调节包含在其中将要处理衬底的腔室中的等离子体的密度的方法。处理（例如蚀刻或沉积）设置在基板上的金属层的方法。

110. 发明授权

US06270687B1 RF plasma method 失效
标题翻译：射频等离子体法
公开(公告)号：US06270687B1
公开(公告)日：2001-08-07
申请号：US09564042
申请日：2000-04-27
申请人： Yan Ye , Donald Olgado , Avi Tepman , Diana Ma , Gerald Zheyao Yin , Peter Loewenhardt , Jeng Hwang , Steve S. Y. Mak
发明人： Yan Ye , Donald Olgado , Avi Tepman , Diana Ma , Gerald Zheyao Yin , Peter Loewenhardt , Jeng Hwang , Steve S. Y. Mak
IPC分类号： B44C122
CPC分类号： H01J37/32477 , H01J37/321
摘要： An RF plasma etch reactor having an etch chamber with electrically conductive walls and a protective layer forming the portion of the walls facing the interior of the chamber. The protective layer prevents sputtering of material from the chamber walls by a plasma formed within the chamber. The etch reactor also has an inductive coil antenna disposed within the etch chamber which is used to generate the plasma by inductive coupling. Like the chamber walls, the inductive coil antenna is constructed to prevent sputtering of the material making up the antenna by the plasma. The coil antenna can take on any configuration (e.g. location, shape, orientation) that is necessary to achieve a desired power deposition pattern within the chamber. Examples of potential coil antenna configurations for achieving the desired power deposition pattern include constructing the coil antenna with a unitary or a segmented structure. The segmented structure involves the use of at least two coil segments wherein each segment is electrically isolated from the other segments and connected to a separate RF power signal. The unitary coil antenna or each of the coil segments can have a planar shape, a cylindrical shape, a truncated conical shape, a dome shape, or any combination thereof. The conductive walls are electrically grounded to serve as an electrical ground (i.e. anode) for a workpiece-supporting pedestal which is connected to a source of RF power to create a bias voltage at the surface of the workpiece.
摘要翻译： RF等离子体蚀刻反应器具有具有导电壁的蚀刻室和形成面向腔室内部的部分壁的保护层。保护层防止在室内形成的等离子体从室壁溅射材料。蚀刻反应器还具有设置在蚀刻室内的感应线圈天线，其用于通过感应耦合产生等离子体。类似于室壁，感应线圈天线被构造成防止由等离子体溅射构成天线的材料。线圈天线可以承受在室内实现期望的功率沉积图案所必需的任何配置（例如位置，形状，取向）。用于实现期望的功率沉积模式的电位线圈天线配置的示例包括以整体或分段结构构造线圈天线。分段结构涉及使用至少两个线圈段，其中每个段与其它段电隔离并连接到单独的RF功率信号。单线圈天线或每个线圈段可以具有平面形状，圆柱形，截顶圆锥形，圆顶形或其任何组合。导电壁电接地以用作工件支撑基座的电接地（即阳极），工件支撑基座连接到RF功率源，以在工件的表面产生偏置电压。

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