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91. 发明申请

US20060130969A1 Partial edge bead removal to allow improved grounding during e-beam mask writing 审中-公开
标题翻译：部分边缘珠去除以允许在电子束掩模写入期间改进接地
公开(公告)号：US20060130969A1
公开(公告)日：2006-06-22
申请号：US11329504
申请日：2006-01-11
申请人： J. Rolfson
发明人： J. Rolfson
IPC分类号： C23F1/00
CPC分类号： G03F1/40 , G03F1/86
摘要： A method to provide a ground point for second, or subsequent, e-beam mask-writing steps by selectively removing the photoresist edge bead of a photomask substrate to expose the underlying chrome layer. The selective removal leaves at least one tab of photoresist edge bead over the chrome layer. After the first e-beam mask writing step and subsequent etch, the tab can be removed to expose a portion of the chromium layer that can act as a new ground point for a second e-beam etch. Also, a nozzle for use in selectively removing the edge bead to leave a tab of photoresist edge bead.
摘要翻译：通过选择性地去除光掩模衬底的光致抗蚀剂边缘以暴露下面的铬层来为第二或随后的电子束掩模写入步骤提供接地点的方法。选择性去除在铬层上留下光致抗蚀剂边缘珠的至少一个突片。在第一电子束掩模写入步骤和随后的蚀刻之后，可以去除突片以暴露可以充当第二电子束蚀刻的新接地点的铬层的一部分。而且，用于选择性地去除边缘珠以留下光致抗蚀剂边缘珠的突片的喷嘴。

92. 发明授权

US07063921B2 Photomask, in particular alternating phase shift mask, with compensation structure 失效
标题翻译：光掩模，特别是交替相移掩模，具有补偿结构
公开(公告)号：US07063921B2
公开(公告)日：2006-06-20
申请号：US10667552
申请日：2003-09-22
申请人： Wolfgang Dettman , Josef Mathuni , Oliver Fagerer , Bettina Schiessl , Stephen Rahn
发明人： Wolfgang Dettman , Josef Mathuni , Oliver Fagerer , Bettina Schiessl , Stephen Rahn
IPC分类号： G01F9/00 , G03C5/00
CPC分类号： G03F1/34 , G03F1/30 , G03F1/36 , G03F1/40 , Y10T403/5773
摘要： The invention relates to a method for the production of masks, in particular for the production of alternating phase shift masks (1), or of chromeless phase shift masks or phase shift masks structured by quartz etching, respectively, as well as to a mask (1), in particular photomask, for the production of semiconductor devices, comprising at least one product field area (6a) and a compensation structure (5) positioned outside the product field area (6a), wherein the compensation structure (5) comprises at least one electroconductive region (8b) that is electrically connected with the product field area (6a).
摘要翻译：本发明涉及一种用于制造掩模的方法，特别是用于生产交替相移掩模（1）或由石英蚀刻构成的无铬相移掩模或相移掩模以及掩模（ 1），特别是光掩模，用于生产半导体器件，包括至少一个产品场区（6a）和位于产品场区（6a）外部的补偿结构（5），其中补偿结构（5）包括与产品场区域（6a）电连接的至少一个导电区域（8b）。

93. 发明授权

US06984475B1 Extreme ultraviolet (EUV) lithography masks 失效
标题翻译：极紫外（EUV）光刻掩模
公开(公告)号：US06984475B1
公开(公告)日：2006-01-10
申请号：US10699767
申请日：2003-11-03
申请人： Harry J. Levinson , Bruno M. LaFontaine , Ivan Lalovic , Adam R. Pawloski
发明人： Harry J. Levinson , Bruno M. LaFontaine , Ivan Lalovic , Adam R. Pawloski
IPC分类号： G01F9/00
CPC分类号： G03F1/24 , B82Y10/00 , B82Y40/00 , G03F1/38 , G03F1/40
摘要： An extreme ultraviolet (EUV) lithography mask blank. The mask blank can include a substrate having a reflector film disposed over an upper surface of the substrate. The mask blank is provided with structural features to facilitate indirect grounding of the reflector film.
摘要翻译：极紫外（EUV）光刻掩模板。掩模坯料可以包括具有设置在基板的上表面上的反射膜的基板。面罩坯料具有促进反射膜间接接地的结构特征。

94. 发明申请

US20050238964A1 PHOTOMASK 审中-公开
标题翻译：照片
公开(公告)号：US20050238964A1
公开(公告)日：2005-10-27
申请号：US10709276
申请日：2004-04-26
申请人： Chao-Yung Chu , Wen-Bin Hsieh , Te-Yang Fang
发明人： Chao-Yung Chu , Wen-Bin Hsieh , Te-Yang Fang
IPC分类号： A47G1/12 , B44F1/00 , G03C5/00 , G03F1/14 , G03F9/00
CPC分类号： G03F1/64 , G03F1/40 , G03F1/62
摘要： A photomask includes a substrate having a transparent substrate, a mask pattern positioned on a surface of the transparent substrate, a transparent electrostatic discharge (ESD) ring positioned on the surface of the transparent substrate and surrounding the mask pattern, a pellicle covering over the mask pattern, and a mounting adhesive used for sticking the pellicle on the transparent electrostatic discharge ring. The transparent electrostatic discharge ring is utilized to examine a binding condition between the pellicle and the transparent substrate and to suppress an electrostatic discharge.
摘要翻译：光掩模包括具有透明基板的基板，位于透明基板的表面上的掩模图案，位于透明基板的表面上且围绕掩模图案的透明静电放电（ESD）环，覆盖在掩模上的防护薄膜图案和用于将防护薄膜组件粘贴在透明静电放电环上的安装粘合剂。透明静电放电环用于检查防护薄膜组件和透明基板之间的结合状态并抑制静电放电。

95. 发明授权

US06927345B2 Guard ring having electrically isolated lightening bars 有权
标题翻译：防护环具有电隔离的减光棒
公开(公告)号：US06927345B2
公开(公告)日：2005-08-09
申请号：US10150321
申请日：2002-05-16
申请人： Tien-Chi Wu , Kou-Chou Chen , Huai-Jen Hsu , George Huang
发明人： Tien-Chi Wu , Kou-Chou Chen , Huai-Jen Hsu , George Huang
IPC分类号： G03F1/00 , G03F1/40 , G03F7/20 , H01L21/687 , H05K1/03
CPC分类号： G03F1/40 , G03F7/70941 , H01L21/68714 , Y10T29/49155
摘要： A guard ring for protecting against electrostatic discharge (ESD) that has electrically isolated lightning bars has a substrate, a first ring, and a second ring. The first ring is on the substrate and has a number of electrically connected lightning bars. The second ring is also on the substrate and concentric to the first ring, but has a number of lightning bars that are electrically isolated from one another. The first ring may be the outer ring and the second ring may be the inner ring, or vice-versa. The guard ring has an ESD breakdown voltage that does not change, even after the first ring or the second ring has protected against ESD. The guard ring may protect a semiconductor component like a semiconductor photomask or a semiconductor device.
摘要翻译：用于防止具有电隔离避雷针的静电放电（ESD）的保护环具有基板，第一环和第二环。第一个环在基板上，并有多个电气连接的避雷针。第二个环也在基板上并且与第一个环同心，但是具有彼此电隔离的多个避雷针。第一环可以是外环，第二环可以是内环，反之亦然。即使在第一个环或第二个环保护了ESD之后，保护环的ESD击穿电压也不会改变。保护环可以保护半导体元件像半导体光掩模或半导体器件。

96. 发明授权

US06893780B1 Photomask and method for reducing electrostatic discharge on the same with an ESD protection pattern 失效
标题翻译：用于减少ESD保护图案上的静电放电的光掩模和方法
公开(公告)号：US06893780B1
公开(公告)日：2005-05-17
申请号：US10290574
申请日：2002-11-08
申请人： Gérald Galan , Eric Souleillet
发明人： Gérald Galan , Eric Souleillet
IPC分类号： A47G1/12 , G03F1/14 , G03F9/00
CPC分类号： G03F1/40
摘要： A photomask and method for reducing electrostatic discharge on the photomask with an ESD protection pattern are disclosed. A photomask includes a substrate and a patterned layer formed on at least a portion of the substrate. The patterned layer includes an electrostatic discharge (ESD) patterned formed between an outer perimeter of an active region and an inner perimeter of a frame region. The ESD pattern reduces ESD effects in the patterned layer.
摘要翻译：公开了一种用于减少具有ESD保护图案的光掩模上的静电放电的光掩模和方法。光掩模包括衬底和形成在衬底的至少一部分上的图案层。图案化层包括在有源区域的外周边和框架区域的内周边之间形成图案的静电放电（ESD）。 ESD图案降低了图案层中的ESD效应。

97. 发明申请

US20040076834A1 Reticle with antistatic coating 失效
标题翻译：带防静电涂层的光罩
公开(公告)号：US20040076834A1
公开(公告)日：2004-04-22
申请号：US10273682
申请日：2002-10-18
申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
发明人： Wei-Yu Su , Dong-Hsu Cheng , Li-Kong Turn
IPC分类号： G03G016/00
CPC分类号： G03F1/64 , G03F1/40 , G03F1/48
摘要： A static resistant reticle comprises a substrate and a patterning layer and is covered by an antistatic conductive film of quaternary amine (R4N)nullClnull. A pellicle structure comprising an optically transparent membrane tightly stretched on a frame is also coated by an antistatic electro conductive film of a similar material. The reticle with the pellicle form a shielded structure isolating the reticle from ESD.
摘要翻译：防静电掩模版包括基底和图案化层，并被季胺（R 4 N）Cl - 的抗静电导电膜覆盖。包括在框架上紧密拉伸的光学透明膜的防护薄膜组件也用类似材料的抗静电导电膜涂覆。具有防护薄膜的掩模版形成将掩模版与ESD隔离的屏蔽结构。

98. 发明授权

US06596552B2 Test photomask and method for investigating ESD-induced reticle defects 有权
公开(公告)号：US06596552B2
公开(公告)日：2003-07-22
申请号：US09874818
申请日：2001-06-05
申请人： Andreas Englisch
发明人： Andreas Englisch
IPC分类号： H01L2166
CPC分类号： G03F1/40 , G03F1/84 , H01L22/34
摘要： A method and apparatus for monitoring and evaluating effects of electrostatic discharge associated with semiconductor manufacturing are disclosed. The method may include, for example, exposing a test photomask that contains an ESD sensitive geometry to a single or a variety of semiconductor manufacturing procedures. The test photomask may be analyzed to determine how much, if any, degradation of its geometry has occurred as a result of the exposure.

99. 发明申请

US20030031934A1 Electrostatic damage (ESD) protected photomask 失效
标题翻译：静电损伤（ESD）保护光掩模
公开(公告)号：US20030031934A1
公开(公告)日：2003-02-13
申请号：US09920504
申请日：2001-08-01
申请人： Infineon Technologies North America Corp.
发明人： Shahzad Akbar
IPC分类号： G03F009/00
CPC分类号： G03F1/40
摘要： A photomask (19) protected against electrostatic damage and a method of manufacturing such a photomask is disclosed. The photomask (8) comprises a transparent substrate (10) on which is deposited an opaque pattern such as lines (12), (14), (16) and (18). A transparent conductive film (30) is deposited over the substrate (10) and pattern such that the various portions of the pattern (lines (12), (14), (16) and (18)) are all maintained at the same electrical potential thereby preventing damage due to an electrostatic discharge.
摘要翻译：公开了防止静电损伤的光掩模（19）和制造这种光掩模的方法。光掩模（8）包括透明基板（10），在其上沉积不透明图案，例如线（12），（14），（16）和（18）。在衬底（10）上沉积透明导电膜（30）并且使图案（线（12），（14），（16）和（18））的各个部分全部保持在相同的电从而防止由静电放电引起的损坏。

100. 发明授权

US5798192A Structure of a mask for use in a lithography process of a semiconductor fabrication 失效
标题翻译：用于半导体制造的光刻工艺中的掩模的结构
公开(公告)号：US5798192A
公开(公告)日：1998-08-25
申请号：US834330
申请日：1997-04-15
申请人： Ming-Chu King , Shih-Shiung Chen , Ying-Chen Chao
发明人： Ming-Chu King , Shih-Shiung Chen , Ying-Chen Chao
IPC分类号： G03F1/00 , G03F9/00
CPC分类号： G03F1/40 , G03F1/50
摘要： A structure of a mask for use in a lithography process in a semiconductor fabrication procedure is disclosed. The structure comprising: a mask base being made of transparent material; a plurality of patterns formed on said mask base, said patterns being used for generating an image on a wafer and being made of a conductive opaque material; and a conductive layer formed on said mask base and said plurality of patterns.
摘要翻译：公开了一种用于半导体制造过程中的光刻工艺中的掩模的结构。该结构包括：掩模基底，由透明材料制成; 形成在所述掩模基底上的多个图案，所述图案用于在晶片上产生图像并由导电不透明材料制成; 以及形成在所述掩模基底和所述多个图案上的导电层。

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