会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 92. 发明授权
    • Method for forming a multi-layer metallic wiring structure
    • 用于形成多层金属布线结构的方法
    • US5385867A
    • 1995-01-31
    • US216968
    • 1994-03-24
    • Tetsuya UedaKousaku YanoTomoyasu MurakamiMichinari YamanakaShuji HiraoNoboru Nomura
    • Tetsuya UedaKousaku YanoTomoyasu MurakamiMichinari YamanakaShuji HiraoNoboru Nomura
    • H01L21/3205H01L21/768H01L23/522H01L21/283H01L21/31
    • H01L21/76847H01L21/76844H01L21/76877H01L21/76885H01L23/5226H01L2924/0002Y10S438/948
    • After accumulating a BPSG film layer on a silicon substrate, a first Al--Si--Cu film layer, a W film layer and a second Al--Si--Cu film layer are successively accumulated on this BPSG film layer. A resist pattern with wide-width and narrow-width pattern portions is formed on the second Al--Si--Cu film layer. The wide-width pattern portion is provided at a position corresponding to a contact for connecting a first-layer metallic wiring and a second-layer metallic wiring, while the narrow-width pattern portion is provided at a position corresponding to a wiring portion for the first-layer metallic wiring. After applying first etching on the second Al--Si--Cu film layer with a mask of the resist patter, second etching is applied on the W film layer. Thereafter, by applying third etching, the resist pattern remaining on the first-layer metallic wiring is removed and the first Al--Si--Cu film layer is transfigured into a tall metallic film portion and a short metallic film portion. After accumulating an inter-layer insulating film layer on the first Al--Si--Cu film layer, etchback is applied on this inter-layer insulating film layer until the top of the tall metallic film portion is bared. Then, the second-layer metallic wiring is formed on the inter-layer insulating film layer so that the second-layer metallic wiring is connected with the tall metallic film portion.
    • 在硅衬底上积累BPSG膜层之后,第一Al-Si-Cu膜层,W膜层和第二Al-Si-Cu膜层依次堆积在该BPSG膜层上。 在第二Al-Si-Cu膜层上形成具有宽幅和窄宽图案部分的抗蚀剂图案。 宽幅图形部分设置在与用于连接第一层金属布线和第二层金属布线的接触件相对应的位置处,而窄宽图案部分设置在与布线部分相对应的位置处 第一层金属布线。 在具有抗蚀剂图案的掩模的第二Al-Si-Cu膜层上施加第一蚀刻之后,在W膜层上施加第二蚀刻。 此后,通过施加第三蚀刻,去除残留在第一层金属布线上的抗蚀剂图案,并将第一Al-Si-Cu膜层变形为高金属膜部分和短金属膜部分。 在第一Al-Si-Cu膜层上积累层间绝缘膜层之后,在该层间绝缘膜层上施加回蚀,直到高金属膜部分的顶部露出。 然后,在层间绝缘膜层上形成第二层金属布线,使得第二层金属布线与高金属膜部分连接。
    • 93. 发明授权
    • Method and apparatus for generating highly dense uniform plasma in a
high frequency electric field
    • 用于在高频电场中产生高密度均匀等离子体的方法和装置
    • US5345145A
    • 1994-09-06
    • US39911
    • 1993-03-30
    • Kenji HarafujiMitsuhiro OhkuniTokuhiko TamakiMasafumi KubotaNoboru Nomura
    • Kenji HarafujiMitsuhiro OhkuniTokuhiko TamakiMasafumi KubotaNoboru Nomura
    • H01J37/32H05H1/46H01J7/24
    • H01J37/32623H01J37/32165H01J37/3266H05H1/46
    • A plasma generating method comprises: a first step of disposing a plurality of lateral electrodes at lateral sides of a plasma generating part in a vacuum chamber; a second step of respectively applying, to the lateral electrodes, high frequency electric powers of which frequencies are the same as one another and of which phases are different from one another, thereby to excite, in the plasma generating part, a high frequency rotating electric field to cause electrons under translational motions in the plasma generating part to present oscillating or rotating motions; and a third step of applying, to the plasma generating part, a magnetic field substantially at a right angle to the working plane of the high frequency rotating electric field, thereby to convert the translational movement of the electrons in the plasma generating part into revolving motions under oscillating or rotating motions by which the electrons revolve in the plasma generating part. The high frequency rotating electric field and the magnetic field cause the electrons in the plasma generating part to be confined therein.
    • 一种等离子体产生方法包括:第一步骤,在真空室中的等离子体产生部分的侧面设置多个横向电极; 分别向横向电极施加频率彼此相同并且相位彼此不同的高频电力的第二步骤,从而在等离子体产生部分中激发高频旋转电力 场引起电子在等离子体产生部分中的平移运动以呈现振荡或旋转运动; 以及向所述等离子体产生部施加与所述高频旋转电场的工作面大致成直角的磁场的第3工序,将所述等离子体产生部中的电子的平移运动转换为旋转运动 电子在等离子体产生部分中旋转的摆动或旋转运动。 高频旋转电场和磁场使得等离子体产生部分中的电子被限制在其中。
    • 95. 发明授权
    • Exposure apparatus
    • 曝光装置
    • US4828392A
    • 1989-05-09
    • US837766
    • 1986-03-10
    • Noboru NomuraKazuhiro YamashitaTakayoshi MatsumuraMidori Yamaguchi
    • Noboru NomuraKazuhiro YamashitaTakayoshi MatsumuraMidori Yamaguchi
    • G03F9/00
    • G03F9/7049G03F9/7076
    • A reduction projection type alignment and exposure apparatus which comprises a light source, a reticle having a first grating, first lens system, a spatial filter disposed around a Fourier spectral plane of the first lens system, second lens system, a substrate having a second grating, and a plurality of photo-detectors for detecting light intensities of a plurality of spectrums appearing on the spatial filter.The light beam generated from the light source is applied to the reticle at which it is divided into a plurality of diffracted light beams by the first grating, and the diffracted light beams are applied through the first lens system, the spatial filter and the second lens system onto the substrate so that the diffracted light beams are re-diffracted by the second grating, and the re-diffracted light beams appear as a plurality of spectrums on the spatial filter. These spectrums are detected by photo-detectors and used for alignment of the reticle and the substrate.
    • 一种还原投影型取向曝光装置,包括光源,具有第一光栅的掩模版,第一透镜系统,设置在第一透镜系统的傅立叶光谱平面附近的空间滤光器,第二透镜系统,具有第二光栅的基板 以及用于检测出现在空间滤波器上的多个光谱的光强度的多个光检测器。 从光源产生的光束被施加到光掩模,在该掩模版处,由第一光栅将其分成多个衍射光束,衍射光束通过第一透镜系统,空间滤光器和第二透镜 系统到基板上,使得衍射光束被第二光栅重衍射,并且再衍射光束在空间滤光器上表现为多个光谱。 这些光谱由光电检测器检测并用于对准标线片和基板。
    • 97. 发明授权
    • Method of manufacturing isolated semiconductor devices
    • 制造隔离半导体器件的方法
    • US4685198A
    • 1987-08-11
    • US758962
    • 1985-07-25
    • Kenji KawakitaNoboru NomuraToyoki Takemoto
    • Kenji KawakitaNoboru NomuraToyoki Takemoto
    • H01L21/762H01L21/763H01L29/06
    • H01L21/76264H01L21/762H01L21/763H01L21/76281H01L21/76283Y10S148/05Y10S148/115Y10S438/973
    • Disclosed is a method of isolating a transistor perfectly by employing a selective oxidation technology (LOCOS technology). More particularly, vertical openings are formed in the surface of {100} silicon substrate, and oxidation resistant films are formed of this surface and in part of the side walls of these openings. In succession, by etching with an etchant having an orientation anisotropy, dents are formed at high precision in the side walls of the openings. By oxidizing using the oxidation resistant film as the mask, an oxide film growing out from a dent in the opening side wall is connected with another oxide film growing out from an adjacent dent. The transistor thus formed in the active region of the silicon electrically isolated from the substrate is small in parasitic capacitance and may be formed into a small size, so that it possesses the features suited to VLSI, that is, high speed, low power consumption, and processability to high density integration.
    • 公开了通过采用选择氧化技术(LOCOS技术)将晶体管完全隔离的方法。 更具体地,在{100}硅衬底的表面中形成垂直开口,并且由该表面和这些开口的一部分侧壁形成抗氧化膜。 相继地,通过用具有取向各向异性的蚀刻剂进行蚀刻,在开口的侧壁中以高精度形成凹痕。 通过使用抗氧化膜作为掩模进行氧化,从开口侧壁中的凹陷生长的氧化膜与从相邻凹坑生长的另一氧化膜连接。 因此,在与衬底电隔离的硅的有源区中形成的晶体管的寄生电容小,并且可以形成为小尺寸,使得其具有适合于VLSI的特征,即高速度,低功耗, 和可加工性的高密度集成。
    • 98. 发明授权
    • Magnetoresistive thin film head
    • 磁阻薄膜头
    • US4660113A
    • 1987-04-21
    • US448058
    • 1982-12-09
    • Noboru NomuraYasuharu Shimeki
    • Noboru NomuraYasuharu Shimeki
    • G11B5/39G11B5/30
    • G11B5/3964G11B5/399
    • A magnetoresistive type thin film magnetic head is completely unaffected by external noise and produces only low interference with a recording medium. A magnetoresistive element which constitutes the thin film magnetic head has three terminals constituted by two end terminals and an intermediate terminal. Constant currents which flow in opposite directions are respectively supplied to the two end terminals. A magnetic field of a signal recorded on and reproduced from a single track of the recording medium is applied to the magnetoresistive element, and reproduction outputs of opposite phases appear at the two end terminals. These outputs are differentially amplified by a differential amplifier. Furthermore, the magnetoresistive element is biased by an induced magnetic anisotropy means in a predetermined direction.
    • 磁阻型薄膜磁头完全不受外部噪声的影响,并且仅对记录介质产生低干扰。 构成薄膜磁头的磁阻元件具有由两个端子和中间端子构成的三个端子。 沿相反方向流动的恒定电流分别提供给两个端子。 记录在记录介质的单个轨道上并从其再现的信号的磁场被施加到磁阻元件,并且在两个端子端出现相反相位的再现输出。 这些输出由差分放大器差分放大。 此外,磁阻元件被感应磁各向异性装置沿预定方向偏置。
    • 100. 发明授权
    • Thin-film magnetic head
    • 薄膜磁头
    • US4490760A
    • 1984-12-25
    • US340367
    • 1982-01-18
    • Nobuyuki KaminakaKenji KanaiNoboru Nomura
    • Nobuyuki KaminakaKenji KanaiNoboru Nomura
    • G11B5/187G11B5/31H01F10/28G11B5/16G11B5/20G11B5/25
    • G11B5/31
    • A thin-film magnetic head having a magnetic substrate made from ferrite, iron-aluminum-silicon alloy or like material, and an upper magnetic layer formed on the magnetic substrate with a lower magnetic layer and a conductive layer interposed therebetween. A portion of the upper magnetic layer is jointed to the magnetic substrate while another portion of the upper magnetic layer is jointed to the lower magnetic layer through a non-magnetic layer of SiO.sub.2 or like material constituting a magnetic gap. The lower magnetic layer, magnetic substrate, upper magnetic layer and the non-magnetic layer in combination form a closed magnetic circuit. A groove is defined between the lower magnetic layer and the magnetic substrate, and formed in the side surface of the magnetic substrate adapted to face a magnetic recording medium. The recess is filled with a non-magnetic material such as glass. Accordingly, it is possible to realize a definite pole piece length to permit an improvement in short-wavelength reproduction characteristics.
    • 具有由铁氧体,铁 - 铝 - 硅合金等材料制成的磁性基板的薄膜磁头和在磁性基板上形成有较低磁性层和介于其间的导电层的上部磁性层。 上部磁性层的一部分与磁性基板接合,另一部分上部磁性层通过构成磁隙的SiO 2或类似材料的非磁性层与下部磁性层接合。 下磁层,磁性基板,上磁层和非磁性层组合形成闭合磁路。 在下磁性层和磁性基板之间形成凹槽,并且形成在适于面向磁记录介质的磁性基板的侧表面中。 该凹部填充有诸如玻璃之类的非磁性材料。 因此,可以实现确定的极片长度以允许改善短波长再现特性。