会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 4. 发明授权
    • Production method for shallow trench insulation
    • 浅沟槽隔离的生产方法
    • US06703287B2
    • 2004-03-09
    • US09791763
    • 2001-02-26
    • Yoshitaka FujiishiAtsushi Ueno
    • Yoshitaka FujiishiAtsushi Ueno
    • H01L2176
    • H01L21/76229H01L21/31053
    • An improved method for producing a semiconductor device in which overpolishing is prevented at a chemical mechanical polishing time to eliminate the influence of peripheries on the object part. A plasma oxide film is formed on a semiconductor substrate so as to fill a recess and a trench. With the use of a resist film as a mask, the plasma oxide film is selectively etched to leave an overpolish-preventing support member in a neighborhood of the recess, which is a photo-related mark, for providing a support against overpolishing at a chemical mechanical polishing time. The surface of the semiconductor substrate is polished by chemical mechanical polishing. Thereafter, a nitride film and an oxide film are removed.
    • 一种用于制造半导体器件的改进方法,其中在化学机械抛光时间期间防止了过度抛光以消除外围对物体部分的影响。 在半导体基板上形成等离子体氧化膜,以填充凹槽和沟槽。 通过使用抗蚀剂膜作为掩模,选择性地蚀刻等离子体氧化物膜以在作为光相关标记的凹部附近留下防多余的支撑构件,以提供用于在化学品上过度抛光的支撑 机械抛光时间。 通过化学机械抛光对半导体基板的表面进行抛光。 之后,除去氮化物膜和氧化物膜。
    • 6. 发明授权
    • Rotation angle sensor
    • 旋转角传感器
    • US07200515B2
    • 2007-04-03
    • US11049082
    • 2005-02-03
    • Takashi SakabeEmi TakumaAtsushi Ueno
    • Takashi SakabeEmi TakumaAtsushi Ueno
    • G01D5/12
    • G01D5/04B62D15/0215
    • A rotation angle sensor includes a first and a second detection gears rotatable with a steering shaft, a first detector configured to detect a rotation angle of the first detection gear, a second detector configured to detect a rotation angle of the second detection gear, a processor configured to calculate a rotation angle of the steering shaft based on the rotation angles detected by the first and second detectors and a discriminator configured to discriminate whether the rotational angle of the steering shaft, calculated by the processor, falls in an abnormal value, wherein a least common multiple between a cycle of the first detector and a cycle of the second detector is greater than a steering angle measurement range.
    • 旋转角度传感器包括可与转向轴一起旋转的第一和第二检测齿轮,被配置为检测第一检测齿轮的旋转角度的第一检测器,被配置为检测第二检测齿轮的旋转角度的第二检测器, 被配置为基于由第一和第二检测器检测的旋转角度来计算转向轴的旋转角度;以及鉴别器,其被配置为鉴别由处理器计算的转向轴的旋转角度是否处于异常值,其中 第一检测器的循环与第二检测器的循环之间的最小公倍数大于转向角测量范围。
    • 8. 发明授权
    • Photomask, semiconductor device, and method for exposing through photomask
    • 光掩模,半导体器件和通过光掩模曝光的方法
    • US06617080B1
    • 2003-09-09
    • US09563953
    • 2000-05-02
    • Toshihide KawachiTakuya MatsushitaShigenori YamashitaYuki MiyamotoAtsushi UenoShinroku Maejima
    • Toshihide KawachiTakuya MatsushitaShigenori YamashitaYuki MiyamotoAtsushi UenoShinroku Maejima
    • G03F900
    • G03F7/70633
    • The present invention provides a photomask, a semiconductor device, and a method for exposing through the photomask. The photomask comprises a photomask substrate, and an on-mask circuit area including an on-mask circuit pattern and an on-mask test mark area including an on-mask test pattern, both formed on the surface of the substrate, wherein the photomask substrate further includes an on-mask photolithography screening mark area including an on-mask comparison pattern and an on-mask screening pattern, the on-mask comparison pattern has substantially the same configuration as at least a part of the on-mask circuit pattern, and the on-mask screening pattern has substantially the same configuration as at least a part of the on-mask test pattern. The present invention allows it to measure the actual displacement generated from an overlaying (i.e. alignment) process for the purpose of eliminating of an the overlay displacement which can take place in a photolithography process.
    • 本发明提供了一种光掩模,半导体器件和用于曝光光掩模的方法。 光掩模包括光掩模基板和包括掩模电路图案的掩模电路区域和包括掩模测试图案的掩模测试标记区域,二者都形成在基板的表面上,其中光掩模基板 进一步包括包括掩膜比较图案和掩模屏蔽图案的掩模光刻掩模标记区域,掩模比较图案具有与至少一部分屏蔽电路图案基本相同的配置,以及 掩模掩模图案具有与掩模测试图案的至少一部分基本相同的构造。 本发明允许它测量从重叠(即对准)过程产生的实际位移,以消除可能在光刻工艺中发生的覆盖位移。
    • 10. 发明授权
    • Method of reducing registration error in exposure step of semiconductor
device
    • 降低半导体器件曝光步骤中的配准误差的方法
    • US5879843A
    • 1999-03-09
    • US7362
    • 1998-01-15
    • Atsushi Ueno
    • Atsushi Ueno
    • G03F7/20G03F9/00H01L21/027
    • G03F7/70633G03F7/70425G03F7/70458G03F9/70
    • A method of reducing a registration error is provided in which the registration error can be uniformly distributed even if an amount of displacement is larger than others at only one of a plurality of measuring points. According to the method, amounts of displacement are measured first at a plurality of measuring points, then one half the sum of the maximum value and the minimum value of the measured amounts of displacement is calculated to obtain a correction value. The correction value is fed back to an exposure apparatus as a correction value for an exposure condition setting file within the exposure apparatus used in an exposure step. The registration error can be distributed uniformly even if amounts of displacement at a plurality of measuring points are considerably different from each other.
    • 提供了一种降低配准误差的方法,其中即使在仅多个测量点中的一个测量点处的位移量大于其他位置时,配准误差也可以均匀分布。 根据该方法,首先在多个测量点测量位移量,然后计算测量的位移量的最大值和最小值之和的一半以获得校正值。 将校正值反馈到曝光装置,作为曝光步骤中使用的曝光装置内的曝光条件设定文件的校正值。 即使在多个测量点处的位移量彼此大不相同,也可以均匀地分布配准误差。