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1. 发明授权

US08300671B2 Surface emitting laser 有权
标题翻译：表面发射激光
公开(公告)号：US08300671B2
公开(公告)日：2012-10-30
申请号：US13176921
申请日：2011-07-06
申请人： Yasumasa Kawakita , Hitoshi Shimizu , Takeo Kageyama
发明人： Yasumasa Kawakita , Hitoshi Shimizu , Takeo Kageyama
IPC分类号： H01S5/00
CPC分类号： H01S5/18311 , H01S5/02208 , H01S5/02284 , H01S5/02288 , H01S5/0425 , H01S5/18322 , H01S5/18369 , H01S2304/04
摘要： A surface emitting laser includes a cavity region formed on a group-III-V compound substrate, which includes an active layer and a current confinement layer that has an aluminum oxide compound and confines a current path through which a current is injected into the active layer, an upper DBR mirror and a lower DBR mirror formed on the substrate, sandwiching the cavity region, and a graded-composition layer disposed to contact the current confinement layer, which has an aluminum composition ratio decreasing monotonically as a distance from the current confinement layer increases. The graded-composition layer includes a first region that contacts the current confinement layer and an oxidation stop layer that contacts the first region and that has a change rate of the aluminum composition ratio larger than that of the first region. The graded-composition layer is oxidized from an interface with the current confinement layer to at least a portion of the oxidation stop layer.
摘要翻译：表面发射激光器包括形成在III-V族化合物衬底上的空腔区域，该腔体区域包括有源层和具有氧化铝化合物的电流限制层，并限制电流通过该电流通路流入有源层，形成在基板上的上DBR镜和下DBR镜，夹着腔区，以及设置成接触电流限制层的渐变组成层，其具有与当前限制层距离单调减小的铝组成比增加渐变组成层包括接触电流限制层的第一区域和与第一区域接触的氧化停止层，并且其铝组成比的变化率大于第一区域的变化率。梯度组合物层从与电流限制层的界面氧化成氧化停止层的至少一部分。

2. 发明申请

US20100271690A1 VERTICAL CAVITY SURFACE EMITTING LASER ELEMENT, VERTICAL CAVITY SURFACE EMITTING LASER ARRAY ELEMENT, VERTICAL CAVITY SURFACE EMITTING LASER DEVICE, LIGHT SOURCE DEVICE, AND OPTICAL MODULE 有权
标题翻译：垂直孔表面发射激光元件，垂直孔表面发射激光阵列元件，垂直孔表面发射激光器件，光源器件和光学模块
公开(公告)号：US20100271690A1
公开(公告)日：2010-10-28
申请号：US12726668
申请日：2010-03-18
申请人： Yasumasa KAWAKITA , Takeo Kageyama , Hitoshi Shimizu , Hirotatsu Ishii
发明人： Yasumasa KAWAKITA , Takeo Kageyama , Hitoshi Shimizu , Hirotatsu Ishii
IPC分类号： H01S3/0941 , H01S5/323
CPC分类号： H01S5/18341 , B82Y20/00 , G11B7/123 , G11B7/127 , H01L2224/48091 , H01L2224/48137 , H01S5/0014 , H01S5/0071 , H01S5/0208 , H01S5/02228 , H01S5/02248 , H01S5/02284 , H01S5/02288 , H01S5/02292 , H01S5/18311 , H01S5/18369 , H01S5/305 , H01S5/3201 , H01S5/34306 , H01S5/423 , H01L2924/00014
摘要： Included are: an active layer provided between an upper multilayer film reflecting mirror and a lower multilayer film reflecting mirror formed on a GaAs substrate and formed of a periodic structure of a low-refractive-index layer formed of AlxGa1-xAs (0.8≦x≦1) and a high-refractive-index layer formed of AlyGa1-yAs (0≦y≦x), at least one of the low-refractive-index layer and the high-refractive-index layer being of n-type; and a lower electrode provided between the lower multilayer film reflecting mirror and the active layer and configured to inject an electric current into the active layer.
摘要翻译：包括：在上层多层膜反射镜和形成在GaAs衬底上的下层多层膜反射镜之间形成的有源层，其由Al x Ga 1-x As（0.8＆amp; N e; x＆nlE）形成的低折射率层的周期性结构 ; 1）和由AlyGa1-yAs（0＆lt; nlE; y＆nlE; x）形成的高折射率层，所述低折射率层和所述高折射率层中的至少一个为n型; 以及下电极，设置在所述下多层膜反射镜和所述有源层之间，并且被配置为向所述有源层注入电流。

3. 发明申请

US20070030874A1 Surface-emitting laser element and laser module using the same 审中-公开
标题翻译：表面发射激光元件和使用其的激光模块
公开(公告)号：US20070030874A1
公开(公告)日：2007-02-08
申请号：US11515017
申请日：2006-09-05
申请人： Maiko Ariga , Norihiro Iwai , Setiagung Casimirus , Hitoshi Shimizu , Fumio Koyama , Masakazu Arai , Takeo Kageyama
发明人： Maiko Ariga , Norihiro Iwai , Setiagung Casimirus , Hitoshi Shimizu , Fumio Koyama , Masakazu Arai , Takeo Kageyama
IPC分类号： H01S3/13 , H01S5/00
CPC分类号： B82Y20/00 , H01S5/0658 , H01S5/1221 , H01S5/18311 , H01S5/2213 , H01S5/2214 , H01S5/3054 , H01S5/3086 , H01S5/32366 , H01S5/3407 , H01S5/34306 , H01S5/34313 , H01S2301/02
摘要： A cavity is formed by a lower multilayer mirror and an upper multilayer mirror and an active layer is arranged between the lower multilayer mirror and the upper multilayer mirror in a surface-emitting laser element. A relaxation oscillation frequency at a bias point in the cavity is set to exceed an optical communication frequency for modulating a laser light output from the surface-emitting laser element.
摘要翻译：通过下多层反射镜和上多层反射镜形成空腔，并且在表面发射激光元件中的下多层反射镜和上多层反射镜之间布置有源层。空腔中的偏置点处的弛豫振荡频率被设定为超过用于调制从表面发射激光器元件输出的激光的光通信频率。

4. 发明授权

US08494022B2 Surface emitting laser, surface emitting laser array, light source and optical module 有权
标题翻译：表面发射激光器，表面发射激光器阵列，光源和光学模块
公开(公告)号：US08494022B2
公开(公告)日：2013-07-23
申请号：US13075302
申请日：2011-03-30
申请人： Hitoshi Shimizu , Takeo Kageyama , Keishi Takaki , Norihiro Iwai
发明人： Hitoshi Shimizu , Takeo Kageyama , Keishi Takaki , Norihiro Iwai
IPC分类号： H01S5/00
CPC分类号： G02B6/4214 , G02B6/421 , H01S5/0014 , H01S5/02284 , H01S5/02288 , H01S5/02292 , H01S5/06226 , H01S5/18311 , H01S5/18341 , H01S5/18347 , H01S5/18358 , H01S5/18369 , H01S5/3215
摘要： A surface emitting laser is formed of a composition in which bandgap energy of layers from immediately above a current confinement layer to a second conductivity type contact layer is reduced towards the second conductivity type contact layer in a stacking direction, and a composition in which bandgap energy of layers from immediately below the current confinement layer to a first conductivity type contact layer is reduced towards the first conductivity type contact layer in a stacking direction while bypassing a quantum well layer or a quantum dot of an active layer, and includes a second conductivity type cladding layer including a material for reducing the mobility of carriers.
摘要翻译：表面发射激光器由其中紧邻电流限制层上方到第二导电类型接触层的层的带隙能量沿层叠方向朝向第二导电类型接触层减小的组合物形成，并且其中带隙能量从紧邻电流限制层下方到第一导电类型接触层的层沿叠层方向朝向第一导电类型接触层减少，同时旁路有源层的量子阱层或量子点，并且包括第二导电类型包层，其包括用于降低载流子迁移率的材料。

5. 发明授权

US08144742B2 Surface emitting laser device 有权
标题翻译：表面发射激光器件
公开(公告)号：US08144742B2
公开(公告)日：2012-03-27
申请号：US12500757
申请日：2009-07-10
申请人： Hitoshi Shimizu , Takeo Kageyama
发明人： Hitoshi Shimizu , Takeo Kageyama
IPC分类号： H01S5/20 , H01S5/00
CPC分类号： H01S5/18311 , B82Y20/00 , H01S5/0422 , H01S5/0425 , H01S5/18341 , H01S5/18369 , H01S5/3095 , H01S5/3201 , H01S5/3406 , H01S5/3412 , H01S5/34306 , H01S2301/173
摘要： To provide a surface emitting laser device including a substrate; an optical resonator arranged on the substrate, the optical resonator including a lower multilayer reflector and an upper multilayer reflector; a strained active layer arranged in the resonator, the strained active layer having a multiple quantum well structure formed with a quantum well layer and a barrier layer; and a current confinement layer arranged on an upper side of the strained active layer, the current confinement layer including a selectively oxidized portion, where the current confinement layer is arranged at a position where a strain in the selectively oxidized portion influences the strained active layer.
摘要翻译：提供一种包括基板的表面发射激光器件; 布置在所述基板上的光学谐振器，所述光学谐振器包括下部多层反射器和上部多层反射器; 布置在所述谐振器中的应变有源层，所述应变有源层具有由量子阱层和阻挡层形成的多量子阱结构; 以及电流限制层，其布置在所述应变有源层的上侧，所述电流限制层包括选择性氧化部分，其中所述电流限制层布置在所述选择性氧化部分中的应变影响所述应变有源层的位置。

6. 发明授权

US07577176B2 Surface emitting laser device 有权
标题翻译：表面发射激光器件
公开(公告)号：US07577176B2
公开(公告)日：2009-08-18
申请号：US12040348
申请日：2008-02-29
申请人： Hitoshi Shimizu , Takeo Kageyama
发明人： Hitoshi Shimizu , Takeo Kageyama
IPC分类号： H01S5/20 , H01S5/00
CPC分类号： H01S5/18311 , B82Y20/00 , H01S5/0422 , H01S5/0425 , H01S5/18308 , H01S5/18341 , H01S5/18369 , H01S5/3095 , H01S5/3201 , H01S5/3406 , H01S5/3412 , H01S5/34306 , H01S2301/173
摘要： An optical resonator including a lower multilayer reflector and an upper multilayer reflector is arranged on a substrate. A strained active layer having a multiple quantum well structure formed with a quantum well layer and a barrier layer is arranged in the resonator. A current confinement layer including a selectively oxidized portion is arranged on an upper side of the strained active layer. The current confinement layer is arranged at a position where a strain in the selectively oxidized portion influences the strained active layer.
摘要翻译：包括下多层反射器和上多层反射器的光学谐振器被布置在基板上。具有量子阱层和势垒层的多量子阱结构的应变有源层被布置在谐振器中。包含选择性氧化部分的电流限制层布置在应变有源层的上侧。电流限制层布置在选择性氧化部分的应变影响应变有源层的位置。

7. 发明申请

US20100008674A1 SURFACE EMITTING LASER DEVICE 有权
标题翻译：表面发射激光器件
公开(公告)号：US20100008674A1
公开(公告)日：2010-01-14
申请号：US12500757
申请日：2009-07-10
申请人： Hitoshi Shimizu , Takeo Kageyama
发明人： Hitoshi Shimizu , Takeo Kageyama
IPC分类号： H04B10/00
CPC分类号： H01S5/18311 , B82Y20/00 , H01S5/0422 , H01S5/0425 , H01S5/18341 , H01S5/18369 , H01S5/3095 , H01S5/3201 , H01S5/3406 , H01S5/3412 , H01S5/34306 , H01S2301/173
摘要： To provide a surface emitting laser device including a substrate; an optical resonator arranged on the substrate, the optical resonator including a lower multilayer reflector and an upper multilayer reflector; a strained active layer arranged in the resonator, the strained active layer having a multiple quantum well structure formed with a quantum well layer and a barrier layer; and a current confinement layer arranged on an upper side of the strained active layer, the current confinement layer including a selectively oxidized portion, where the current confinement layer is arranged at a position where a strain in the selectively oxidized portion influences the strained active layer.
摘要翻译：提供一种包括基板的表面发射激光器件; 布置在所述基板上的光学谐振器，所述光学谐振器包括下部多层反射器和上部多层反射器; 布置在所述谐振器中的应变有源层，所述应变有源层具有由量子阱层和阻挡层形成的多量子阱结构; 以及电流限制层，其布置在所述应变有源层的上侧，所述电流限制层包括选择性氧化部分，其中所述电流限制层布置在所述选择性氧化部分中的应变影响所述应变有源层的位置。

8. 发明授权

US08472492B2 Vertical cavity surface emitting laser element, vertical cavity surface emitting laser array element, vertical cavity surface emitting laser device, light source device, and optical module 有权
标题翻译：垂直腔表面发射激光元件，垂直腔表面发射激光器阵列元件，垂直腔表面发射激光器件，光源器件和光学模块
公开(公告)号：US08472492B2
公开(公告)日：2013-06-25
申请号：US12726668
申请日：2010-03-18
申请人： Yasumasa Kawakita , Takeo Kageyama , Hitoshi Shimizu , Hirotatsu Ishii
发明人： Yasumasa Kawakita , Takeo Kageyama , Hitoshi Shimizu , Hirotatsu Ishii
IPC分类号： H01S5/00
CPC分类号： H01S5/18341 , B82Y20/00 , G11B7/123 , G11B7/127 , H01L2224/48091 , H01L2224/48137 , H01S5/0014 , H01S5/0071 , H01S5/0208 , H01S5/02228 , H01S5/02248 , H01S5/02284 , H01S5/02288 , H01S5/02292 , H01S5/18311 , H01S5/18369 , H01S5/305 , H01S5/3201 , H01S5/34306 , H01S5/423 , H01L2924/00014
摘要： Included are: an active layer provided between an upper multilayer film reflecting mirror and a lower multilayer film reflecting mirror formed on a GaAs substrate and formed of a periodic structure of a low-refractive-index layer formed of AlxGa1-xAs (0.8≦x≦1) and a high-refractive-index layer formed of AlyGa1-yAs (0≦y≦x), at least one of the low-refractive-index layer and the high-refractive-index layer being of n-type; and a lower electrode provided between the lower multilayer film reflecting mirror and the active layer and configured to inject an electric current into the active layer.
摘要翻译：包括：在上层多层膜反射镜和形成在GaAs衬底上的下层多层膜反射镜之间形成的有源层，其由Al x Ga 1-x As（0.8 @ x @ x As）形成的低折射率层的周期性结构形成， 1）和由AlyGa1-yAs（0 @ y @ x）形成的高折射率层，低折射率层和高折射率层中的至少一个为n型; 以及下电极，设置在所述下多层膜反射镜和所述有源层之间，并且被配置为向所述有源层注入电流。

9. 发明申请

US20080205463A1 METHOD OF MANUFACTURING VERTICAL-CAVITY SURFACE-EMITTING LASER DEVICE AND VERTICAL-CAVITY SURFACE-EMITTING LASER DEVICE 有权
标题翻译：制造垂直表面发射激光器件和垂直孔表面激光器件的方法
公开(公告)号：US20080205463A1
公开(公告)日：2008-08-28
申请号：US12029019
申请日：2008-02-11
申请人： Keishi TAKAKI , Norihiro Iwai , Hitoshi Shimizu , Takeo Kageyama
发明人： Keishi TAKAKI , Norihiro Iwai , Hitoshi Shimizu , Takeo Kageyama
IPC分类号： H01S5/183 , H01L21/02
CPC分类号： H01S5/18333 , H01S5/18311
摘要： A selective oxidation layer is formed by alternately growing an AlAs layer and an XAs layer containing a group III element X with a thickness ratio in a range between 97:3 and 99:1 on a plurality of semiconductor layers including an active layer. The selective oxidation layer is selectively oxidized to manufacture a vertical-cavity surface-emitting laser.
摘要翻译：通过在包括活性层的多个半导体层上交替地生长AlAs层和含有III族元素X的厚度比在97:3和99:1之间的范围的XAs层来形成选择性氧化层。选择性氧化层被选择性地氧化以制造垂直腔表面发射激光器。

10. 发明授权

US07888145B2 Method of manufacturing vertical-cavity surface-emitting laser device and vertical-cavity surface-emitting laser device 有权
标题翻译：制造垂直腔表面发射激光器件和垂直腔表面发射激光器件的方法
公开(公告)号：US07888145B2
公开(公告)日：2011-02-15
申请号：US12029019
申请日：2008-02-11
申请人： Keishi Takaki , Norihiro Iwai , Hitoshi Shimizu , Takeo Kageyama
发明人： Keishi Takaki , Norihiro Iwai , Hitoshi Shimizu , Takeo Kageyama
IPC分类号： H01L21/00 , H01L27/15
CPC分类号： H01S5/18333 , H01S5/18311
摘要： A selective oxidation layer is formed by alternately growing an AlAs layer and an XAs layer containing a group III element X with a thickness ratio in a range between 97:3 and 99:1 on a plurality of semiconductor layers including an active layer. The selective oxidation layer is selectively oxidized to manufacture a vertical-cavity surface-emitting laser.
摘要翻译：通过在包括活性层的多个半导体层上交替地生长AlAs层和含有III族元素X的厚度比在97:3和99:1之间的范围的XAs层来形成选择性氧化层。选择性氧化层被选择性地氧化以制造垂直腔表面发射激光器。

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