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1. 发明授权

US08472492B2 Vertical cavity surface emitting laser element, vertical cavity surface emitting laser array element, vertical cavity surface emitting laser device, light source device, and optical module 有权
标题翻译：垂直腔表面发射激光元件，垂直腔表面发射激光器阵列元件，垂直腔表面发射激光器件，光源器件和光学模块
公开(公告)号：US08472492B2
公开(公告)日：2013-06-25
申请号：US12726668
申请日：2010-03-18
申请人： Yasumasa Kawakita , Takeo Kageyama , Hitoshi Shimizu , Hirotatsu Ishii
发明人： Yasumasa Kawakita , Takeo Kageyama , Hitoshi Shimizu , Hirotatsu Ishii
IPC分类号： H01S5/00
CPC分类号： H01S5/18341 , B82Y20/00 , G11B7/123 , G11B7/127 , H01L2224/48091 , H01L2224/48137 , H01S5/0014 , H01S5/0071 , H01S5/0208 , H01S5/02228 , H01S5/02248 , H01S5/02284 , H01S5/02288 , H01S5/02292 , H01S5/18311 , H01S5/18369 , H01S5/305 , H01S5/3201 , H01S5/34306 , H01S5/423 , H01L2924/00014
摘要： Included are: an active layer provided between an upper multilayer film reflecting mirror and a lower multilayer film reflecting mirror formed on a GaAs substrate and formed of a periodic structure of a low-refractive-index layer formed of AlxGa1-xAs (0.8≦x≦1) and a high-refractive-index layer formed of AlyGa1-yAs (0≦y≦x), at least one of the low-refractive-index layer and the high-refractive-index layer being of n-type; and a lower electrode provided between the lower multilayer film reflecting mirror and the active layer and configured to inject an electric current into the active layer.
摘要翻译：包括：在上层多层膜反射镜和形成在GaAs衬底上的下层多层膜反射镜之间形成的有源层，其由Al x Ga 1-x As（0.8 @ x @ x As）形成的低折射率层的周期性结构形成， 1）和由AlyGa1-yAs（0 @ y @ x）形成的高折射率层，低折射率层和高折射率层中的至少一个为n型; 以及下电极，设置在所述下多层膜反射镜和所述有源层之间，并且被配置为向所述有源层注入电流。

2. 发明申请

US20100271690A1 VERTICAL CAVITY SURFACE EMITTING LASER ELEMENT, VERTICAL CAVITY SURFACE EMITTING LASER ARRAY ELEMENT, VERTICAL CAVITY SURFACE EMITTING LASER DEVICE, LIGHT SOURCE DEVICE, AND OPTICAL MODULE 有权
标题翻译：垂直孔表面发射激光元件，垂直孔表面发射激光阵列元件，垂直孔表面发射激光器件，光源器件和光学模块
公开(公告)号：US20100271690A1
公开(公告)日：2010-10-28
申请号：US12726668
申请日：2010-03-18
申请人： Yasumasa KAWAKITA , Takeo Kageyama , Hitoshi Shimizu , Hirotatsu Ishii
发明人： Yasumasa KAWAKITA , Takeo Kageyama , Hitoshi Shimizu , Hirotatsu Ishii
IPC分类号： H01S3/0941 , H01S5/323
CPC分类号： H01S5/18341 , B82Y20/00 , G11B7/123 , G11B7/127 , H01L2224/48091 , H01L2224/48137 , H01S5/0014 , H01S5/0071 , H01S5/0208 , H01S5/02228 , H01S5/02248 , H01S5/02284 , H01S5/02288 , H01S5/02292 , H01S5/18311 , H01S5/18369 , H01S5/305 , H01S5/3201 , H01S5/34306 , H01S5/423 , H01L2924/00014
摘要： Included are: an active layer provided between an upper multilayer film reflecting mirror and a lower multilayer film reflecting mirror formed on a GaAs substrate and formed of a periodic structure of a low-refractive-index layer formed of AlxGa1-xAs (0.8≦x≦1) and a high-refractive-index layer formed of AlyGa1-yAs (0≦y≦x), at least one of the low-refractive-index layer and the high-refractive-index layer being of n-type; and a lower electrode provided between the lower multilayer film reflecting mirror and the active layer and configured to inject an electric current into the active layer.
摘要翻译：包括：在上层多层膜反射镜和形成在GaAs衬底上的下层多层膜反射镜之间形成的有源层，其由Al x Ga 1-x As（0.8＆amp; N e; x＆nlE）形成的低折射率层的周期性结构 ; 1）和由AlyGa1-yAs（0＆lt; nlE; y＆nlE; x）形成的高折射率层，所述低折射率层和所述高折射率层中的至少一个为n型; 以及下电极，设置在所述下多层膜反射镜和所述有源层之间，并且被配置为向所述有源层注入电流。

3. 发明申请

US20110274131A1 TWO-DIMENSIONAL SURFACE-EMITTING LASER ARRAY ELEMENT, SURFACE-EMITTING LASER DEVICE AND LIGHT SOURCE 审中-公开
标题翻译：二维表面发射激光阵列元件，表面发射激光器件和光源
公开(公告)号：US20110274131A1
公开(公告)日：2011-11-10
申请号：US13142996
申请日：2010-01-20
申请人： Keishi Takaki , Hirotatsu Ishii , Hitoshi Shimizu , Norihiro Iwai
发明人： Keishi Takaki , Hirotatsu Ishii , Hitoshi Shimizu , Norihiro Iwai
IPC分类号： H01S5/42
CPC分类号： H01S5/423 , H01S5/02284 , H01S5/0422 , H01S5/18308 , H01S5/18311 , H01S5/18341 , H01S5/18358 , H01S5/18369 , H01S5/2214 , H01S5/4018
摘要： Included are a plurality of surface-emitting laser elements each of which includes a substrate; a lower multilayer reflective mirror and an upper multilayer reflective mirror that are formed on the substrate and are formed from a periodic structure of a high-refractive index layer and a low-refractive index layer; an active layer provided between the lower multilayer reflective mirror and the upper multilayer reflective mirror; a lower contact layer positioned between the active layer and the lower multilayer reflective mirror, and is extended to an outer peripheral side of the upper multilayer reflective mirror; a lower electrode formed on a surface of a portion where the lower contact layer is extended; and an upper electrode for injecting a current to the active layer, wherein the surface-emitting laser elements are electrically connected in series to each other to form a series-connected element array. This allows provision of a two-dimensional surface-emitting laser array element capable of achieving high energy conversion efficiency with a simple structure and capable of high integration, and a surface-emitting laser device and a light source using the same.
摘要翻译：包括多个表面发射激光器元件，每个表面发射激光器元件包括衬底; 形成在基板上并由高折射率层和低折射率层的周期性结构形成的下多层反射镜和上多层反射镜; 设置在所述下多层反射镜和所述上多层反射镜之间的有源层; 位于有源层和下多层反射镜之间的下接触层，并延伸到上多层反射镜的外周侧; 形成在下接触层延伸的部分的表面上的下电极; 以及用于向有源层注入电流的上电极，其中所述表面发射激光元件彼此串联电连接以形成串联连接的元件阵列。这允许提供能够以简单结构实现高能量转换效率且能够高集成度的二维表面发射激光器阵列元件，以及使用该二维表面发射激光器阵列元件的光源。

4. 发明授权

US08488644B2 Semiconductor laser element and manufacturing method thereof 有权
标题翻译：半导体激光元件及其制造方法
公开(公告)号：US08488644B2
公开(公告)日：2013-07-16
申请号：US13133946
申请日：2009-12-10
申请人： Suguru Imai , Keishi Takaki , Norihiro Iwai , Kinuka Tanabe , Hitoshi Shimizu , Hirotatsu Ishii
发明人： Suguru Imai , Keishi Takaki , Norihiro Iwai , Kinuka Tanabe , Hitoshi Shimizu , Hirotatsu Ishii
IPC分类号： H01S5/00
CPC分类号： H01S5/18341 , H01S5/0425 , H01S5/18308 , H01S5/18311 , H01S5/18369 , H01S5/2072
摘要： A semiconductor laser element includes a first electrode, a second electrode, a first reflecting mirror, a second reflecting mirror, and a resonator. The resonator includes an active layer, a current confinement layer, a first semiconductor layer having a first doping concentration formed at a side opposite to the active layer across the current confinement layer, and a second semiconductor layer having a second doping concentration higher than the first doping concentration formed between the first semiconductor layer and the current confinement layer. The first electrode is provided to contact a part of a surface of the first semiconductor layer. The first semiconductor layer has a diffusion portion into which a component of the first electrode diffuses. The second semiconductor layer contacts the diffusion portion. The second semiconductor layer is positioned at a node of a standing wave at a time of laser oscillation of the semiconductor laser element.
摘要翻译：半导体激光元件包括第一电极，第二电极，第一反射镜，第二反射镜和谐振器。谐振器包括有源层，电流限制层，具有形成在跨过电流限制层的有源层相反侧的第一掺杂浓度的第一半导体层，以及具有高于第一掺杂浓度的第二掺杂浓度的第二半导体层在第一半导体层和电流限制层之间形成的掺杂浓度。第一电极设置成接触第一半导体层的表面的一部分。第一半导体层具有扩散部，第一电极的成分扩散到该扩散部。第二半导体层与扩散部接触。第二半导体层位于半导体激光元件的激光振荡时的驻波的节点处。

5. 发明申请

US20110261852A1 SEMICONDUCTOR LASER ELEMENT AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体激光元件及其制造方法
公开(公告)号：US20110261852A1
公开(公告)日：2011-10-27
申请号：US13133946
申请日：2009-12-10
申请人： Suguru Imai , Keishi Takaki , Norihiro Iwai , Kinuka Tanabe , Hitoshi Shimizu , Hirotatsu Ishii
发明人： Suguru Imai , Keishi Takaki , Norihiro Iwai , Kinuka Tanabe , Hitoshi Shimizu , Hirotatsu Ishii
IPC分类号： H01S5/10 , H01L33/20 , B82Y20/00
CPC分类号： H01S5/18341 , H01S5/0425 , H01S5/18308 , H01S5/18311 , H01S5/18369 , H01S5/2072
摘要： A semiconductor laser element includes a first electrode, a second electrode, a first reflecting mirror, a second reflecting mirror, and a resonator. The resonator includes an active layer, a current confinement layer, a first semiconductor layer having a first doping concentration formed at a side opposite to the active layer across the current confinement layer, and a second semiconductor layer having a second doping concentration higher than the first doping concentration formed between the first semiconductor layer and the current confinement layer. The first electrode is provided to contact a part of a surface of the first semiconductor layer. The first semiconductor layer has a diffusion portion into which a component of the first electrode diffuses. The second semiconductor layer contacts the diffusion portion. The second semiconductor layer is positioned at a node of a standing wave at a time of laser oscillation of the semiconductor laser element.
摘要翻译：半导体激光元件包括第一电极，第二电极，第一反射镜，第二反射镜和谐振器。谐振器包括有源层，电流限制层，具有形成在跨过电流限制层的有源层相反侧的第一掺杂浓度的第一半导体层，以及具有高于第一掺杂浓度的第二掺杂浓度的第二半导体层在第一半导体层和电流限制层之间形成的掺杂浓度。第一电极设置成接触第一半导体层的表面的一部分。第一半导体层具有扩散部，第一电极的成分扩散到该扩散部。第二半导体层与扩散部接触。第二半导体层位于半导体激光元件的激光振荡时的驻波的节点处。

6. 发明授权

US08222639B2 Nitride based semiconductor device and method of manufacturing the same 有权
标题翻译：氮化物基半导体器件及其制造方法
公开(公告)号：US08222639B2
公开(公告)日：2012-07-17
申请号：US12535009
申请日：2009-08-04
申请人： Tatsuyuki Shinagawa , Hirotatsu Ishii , Akihiko Kasukawa
发明人： Tatsuyuki Shinagawa , Hirotatsu Ishii , Akihiko Kasukawa
IPC分类号： H01L29/10
CPC分类号： H01S5/32341 , H01S5/0218
摘要： An interfacial reaction suppressing layer 12 formed between an oxide layer including a ZnO single crystal substrate 11 and a nitride layer including an InGaN semiconductor layer 13 restrains the interfacial reaction between the oxide layer and the nitride layer and formation of a reaction layer (Al2ZnO4) at the interface, which makes it possible to grow and thermally treat the InGaN semiconductor layer 13 at a high temperature. Thus, a crystal quality of the InGaN semiconductor layer 13 is improved.
摘要翻译：在包括ZnO单晶衬底11的氧化物层和包括InGaN半导体层13的氮化物层之间形成的界面反应抑制层12抑制氧化物层和氮化物层之间的界面反应，并形成反应层（Al 2 ZnO 4）该界面使得可以在高温下生长和热处理InGaN半导体层13。因此，提高了InGaN半导体层13的晶体质量。

7. 发明授权

US08222658B2 Semiconductor light emitting element and method of manufacturing therefor 有权
标题翻译：半导体发光元件及其制造方法
公开(公告)号：US08222658B2
公开(公告)日：2012-07-17
申请号：US12399520
申请日：2009-03-06
申请人： Tatsuyuki Shinagawa , Hirotatsu Ishii , Akihiko Kasukawa
发明人： Tatsuyuki Shinagawa , Hirotatsu Ishii , Akihiko Kasukawa
IPC分类号： H01L33/00 , H01S3/13
CPC分类号： H01S5/0218 , B82Y20/00 , H01S5/3202 , H01S5/3214 , H01S5/34333
摘要： A semiconductor light emitting element of the present invention comprises: a zinc oxide (ZnO) single crystal substrate 12 with a substrate surface of a plane orientation insusceptible to a piezo electric field; a Lattice-matched layer 13 formed on the substrate surface to be lattice-matched with the ZnO single crystal substrate 12; an active layer 15 of indium gallium nitride (InxGa1-xN, 0
摘要翻译：本发明的半导体发光元件包括：氧化锌（ZnO）单晶衬底12，其具有不受压电场敏感的面取向的衬底表面; 形成在与ZnO单晶衬底12晶格匹配的衬底表面上的晶格匹配层13; 氮化铟镓（In x Ga 1-x N，0

8. 发明申请

US20110261849A1 SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD OF MANUFACTURING THEREOF 审中-公开
标题翻译：半导体发光元件及其制造方法
公开(公告)号：US20110261849A1
公开(公告)日：2011-10-27
申请号：US13038951
申请日：2011-03-02
申请人： Tatsuyuki Shinagawa , Hirotatsu Ishii , Hirokazu Sasaki , Akihiko Kasukawa
发明人： Tatsuyuki Shinagawa , Hirotatsu Ishii , Hirokazu Sasaki , Akihiko Kasukawa
IPC分类号： H01S5/323 , H01S5/18 , H01L33/02
CPC分类号： H01S5/2201 , H01L33/007 , H01L33/12 , H01L33/16 , H01L33/32 , H01S5/0202 , H01S5/028 , H01S5/18308 , H01S5/18341 , H01S5/18369 , H01S5/2214 , H01S5/3202 , H01S5/32341 , H01S2304/02
摘要： A semiconductor light emitting element comprising: a buffer layer that is grown by using a growth substrate including ZnO, the buffer layer being made by using an AlGaInN-based material including In and being configured so that the growth surface thereof has a nitrogen polar plane; and an active layer that is formed on the buffer layer, the active layer being made by using an AlGaInN-based material including In and being configured so that the growth surface thereof has a group-III polar plane.
摘要翻译：一种半导体发光元件，包括：缓冲层，其通过使用包含ZnO的生长衬底生长，所述缓冲层通过使用包括In的AlGaInN基材料制成并且被构造成使得其生长表面具有氮极平面; 以及形成在所述缓冲层上的有源层，所述有源层通过使用包括In的AlGaInN基材料制成，并且被配置为使得其生长表面具有III族极性平面。

9. 发明授权

US08929692B2 Integrated optical device and manufacturing method of the same 有权
标题翻译：集成光学器件及其制造方法相同
公开(公告)号：US08929692B2
公开(公告)日：2015-01-06
申请号：US13594978
申请日：2012-08-27
申请人： Norihiro Iwai , Hirotatsu Ishii
发明人： Norihiro Iwai , Hirotatsu Ishii
IPC分类号： G02B6/43 , G02B6/12 , H01S5/024 , H01S5/026 , H01S5/06 , H01S5/10 , H01S5/227 , H01S5/343 , H01S5/20 , G02B6/122
CPC分类号： G02B6/12004 , B82Y20/00 , G02B6/1228 , H01S5/02453 , H01S5/026 , H01S5/0612 , H01S5/106 , H01S5/2063 , H01S5/227 , H01S5/34306
摘要： Provided is an optical integrated device comprising a first waveguide that is formed on a substrate and includes a first optical path; an electrode formed on the first waveguide; a second waveguide that is formed on the substrate and includes a second optical path; and a transparent waveguide that is formed on the substrate between the first waveguide and the second waveguide, and includes a transparent core that serves as an optical path and is formed of a material having higher bandgap energy than the first optical path. The electrode is formed above the first waveguide and is not formed above the transparent waveguide, and elements including the first waveguide are optically active elements that operate according to current injected thereto.
摘要翻译：提供了一种光学集成器件，包括形成在衬底上并包括第一光路的第一波导; 形成在第一波导上的电极; 第二波导，其形成在所述基板上并且包括第二光路; 以及形成在第一波导和第二波导之间的基板上的透明波导，并且包括用作光路并由具有比第一光路更高的带隙能量的材料形成的透明芯。电极形成在第一波导上方，并且不形成在透明波导的上方，并且包括第一波导的元件是根据注入的电流而工作的光学活性元件。

10. 发明申请

US20100195685A1 SEMICONDUCTOR LASER ELEMENT AND METHOD OF MANUFACTURING SEMICONDUCTOR LASER ELEMENT 有权
标题翻译：半导体激光器元件和制造半导体激光器元件的方法
公开(公告)号：US20100195685A1
公开(公告)日：2010-08-05
申请号：US12716315
申请日：2010-03-03
申请人： Hidehiro Taniguchi , Hirotatsu Ishii , Takeshi Namegaya
发明人： Hidehiro Taniguchi , Hirotatsu Ishii , Takeshi Namegaya
IPC分类号： H01S5/34 , H01S5/343 , H01S5/16 , H01L21/20
CPC分类号： H01S5/164 , H01S5/0421 , H01S5/162 , H01S5/168 , H01S5/2072 , H01S5/3054 , H01S5/3223 , H01S5/3427
摘要： A semiconductor laser element includes: a window region including a disordered portion formed by diffusion of a group-III vacancy, the diffusion promoted by providing on the window region a promoting film that absorbs a predetermined atom; a non-window region including an active layer of a quantum well structure; and a difference equal to or larger than 50 meV between an energy band gap in the window region and an energy band gap in the non-window region.
摘要翻译：半导体激光元件包括：窗口区域，其包括通过III族空位扩散形成的无序部分，通过在窗口区域上提供吸收预定原子的促进膜促进的扩散; 包括量子阱结构的有源层的非窗口区域; 并且在窗口区域中的能带间隙和非窗口区域中的能带间隙之间的差异等于或大于50meV。

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