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    • 2. 发明授权
    • 입출력 래퍼들을 갖는 반도체 장치
    • 具有输入/输出封装的半导体器件
    • KR101681736B1
    • 2016-12-02
    • KR1020100045525
    • 2010-05-14
    • 삼성전자주식회사
    • 이종필이재영강무경
    • G01R31/3185H03K19/177H03K3/2885
    • G01R31/318572G01R31/318561H03K19/17744
    • 본발명은입출력래퍼들(I/O wrappers)을갖는반도체장치에관한것이다.본발명의실시예에따른반도체장치는제 1 패드, 제 1 스캔플립-플롭및 제 1 제어플립-플롭들을포함하는제 1 래퍼; 제 2 패드, 제 2 스캔플립-플롭및 제 2 제어플립-플롭들을포함하는제 2 래퍼; 및상기제 1 및제 2 래퍼를제어하기위한신호들을상기제 1 래퍼에제공하는입출력컨트롤러를포함한다. 여기서, 상기제 1 래퍼는상기신호들을상기제 2 래퍼에전달하며, 상기제 1 및제 2 스캔플립-플롭은상기신호들을통해전달되는데이터를저장및 시프트하기위한시프트레지스터로서구성된다. 그리고, 상기제 1 스캔플립-플롭의저장값은상기신호들중 선택신호에따라상기제 1 제어플립-플롭들중 하나에저장되고, 상기제 2 스캔플립-플롭의저장값은상기선택신호에따라상기제 2 제어플립-플롭들중 하나에저장된다. 본발명의실시예에따른반도체장치에의하면, 입출력컨트롤러(IO controller)와입출력패드(IO PAD)들사이의입출력제어신호라인(IO control signal line)들에소모되는면적이감소하여집적도가향상될수 있다. 또한, 설계상의복잡도가감소하여개발기간이단축될수 있다.
    • 一种半导体器件包括:第一封装件,包括第一扫描触发器,第一控制触发器和第一焊盘,第一扫描触发器接收第一值和第二值,并存储用于确定第一值的功能的第二值 垫; 包括第二扫描触发器,第二控制触发器和第二焊盘的第二封装件,所述第二扫描触发器从所述第一封装件接收所述第一值,并存储所述第一值以确定所述第二焊盘的功能; 以及输入/输出控制器,被配置为向第一包装提供具有第一和第二值的移位输入信号。
    • 4. 发明公开
    • 필드 프로그램 가능한 게이트 어레이용 구조체
    • 现场可编程门阵列架构
    • KR1020080041303A
    • 2008-05-09
    • KR1020087009321
    • 2001-12-20
    • 퀵로직 코퍼레이션
    • 푸로버트이튼데이빗디.이케빈케이.챈앤드류케이.
    • H03K19/00
    • H03K19/17736H03K19/1774H03K19/17744H03K19/1778H03L7/183
    • A field programmable gate array (100) includes a programmable interconnect structure (104) and plurality of logic cells (102). The logic cells each include a number of combinatorial logic circuits (110a, 110b), which have direct interconnections with the programmable interconnect structure, and a plurality of sequential logic element (162, 164), such as D type flip- flops that acts as registers. The combinatorial logic circuits may be directly connected to the programmable interconnect structure as well as connected to the input terminals of the sequential logic elements. Consequently, the logic cells (102) include both combinatorial and registered connections with the programmable interconnect structure (104). Moreover, one of the sequential elements may selectively receive a dedicated input from the programmable interconnect structure. The output leads of the logic cell is connected to the programmable interconnect structure through a driver that includes a protection transistor. The gate of the protection transistor is coupled to a primary charge pump that is shared with multiple drivers as well as a secondary charge pump associated with the driver.
    • 现场可编程门阵列(100)包括可编程互连结构(104)和多个逻辑单元(102)。 每个逻辑单元包括与可编程互连结构具有直接互连的多个组合逻辑电路(110a,110b)以及多个顺序逻辑元件(162,164),诸如D型触发器,其作为 寄存器。 组合逻辑电路可以直接连接到可编程互连结构,并且连接到顺序逻辑元件的输入端。 因此,逻辑单元(102)包括与可编程互连结构(104)的组合和注册连接。 此外,顺序元件之一可以选择性地从可编程互连结构接收专用输入。 逻辑单元的输出引线通过包括保护晶体管的驱动器连接到可编程互连结构。 保护晶体管的栅极耦合到与多个驱动器共享的主电荷泵以及与驱动器相关联的次级电荷泵。
    • 10. 发明公开
    • 반도체 장치
    • 半导体器件
    • KR1020120134056A
    • 2012-12-11
    • KR1020120057195
    • 2012-05-30
    • 가부시키가이샤 한도오따이 에네루기 켄큐쇼
    • 오마루다쿠로
    • H03K19/177H01L21/82
    • H03K19/177H01L25/00H01L2924/0002H03K19/0013H03K19/17744
    • PURPOSE: A semiconductor device is provide to precisely convert the output of a unit cell by controlling the output of the unit cell through an electric potential which is supplied to a node of a transistor. CONSTITUTION: A unit cell(320) is electrically connected to a bit line, a unit cell selection line, an analog device selection line, an input signal line, and an output signal line. The unit cell comprises a first transistor(340), a second transistor(350), a third transistor(342), and a fourth transistor(352), and an analog device(310). The unit cell selection line and a gate electrode of the first transistor are electrically connected. The bit line is connected to either a source electrode or a drain electrode of the first transistor and either a source electrode or a drain electrode of the third transistor. The analog device selection line and a gate electrode of the third transistor are electrically connected.
    • 目的:通过控制晶体管节点的电位来控制晶体管的输出,提供半导体器件来精确地转换晶体管的输出。 构成:单元电池(320)电连接到位线,单元电池选择线,模拟装置选择线,输入信号线和输出信号线。 单元包括第一晶体管(340),第二晶体管(350),第三晶体管(342)和第四晶体管(352),以及模拟装置(310)。 单元电池选择线和第一晶体管的栅电极电连接。 位线连接到第一晶体管的源电极或漏电极,以及第三晶体管的源电极或漏电极。 模拟装置选择线和第三晶体管的栅电极电连接。