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    • 1. 发明授权
    • 미소 구동기 제조방법
    • 미소구동기제조방법
    • KR100465914B1
    • 2005-01-13
    • KR1020020016681
    • 2002-03-27
    • 한국과학기술원
    • 이춘섭이재덕황치호한철희
    • B81B7/00
    • PURPOSE: A method for fabricating a micro-sized driving device is provided to drive the micro-sized driving device with low operating voltage by allowing electrodes having a comb shape to have fine interval. CONSTITUTION: A substrate is firstly prepared. Then, a first oxide layer, a first silicon layer, a second oxide layer, a nitride layer and a third oxide layer are sequentially deposited on the substrate. A first electrode pattern is formed on the third oxide layer by using a photosensitive film. The third oxide layer, the nitride layer, the second oxide layer and the first silicon layer are etched along the first electrode pattern in order to expose the first oxide layer, thereby obtaining a first electrode having a plurality of fingers. An oxide layer is formed at a lateral portion of the first electrode. Then, a second electrode is formed by etching a fourth oxide layer and a second silicon layer formed on the second silicon layer. After that, the first oxide layer, the second oxide layer, the lateral oxide layer, the fourth oxide layer and the nitride layer are removed, thereby achieving a micro-sized driving device.
    • 目的:提供一种用于制造微型驱动装置的方法,以通过使具有梳形形状的电极具有精细间隔来以低操作电压驱动微型驱动装置。 构成:首先准备基材。 然后,在衬底上顺序沉积第一氧化物层,第一硅层,第二氧化物层,氮化物层和第三氧化物层。 通过使用光敏膜在第三氧化物层上形成第一电极图案。 沿着第一电极图案蚀刻第三氧化物层,氮化物层,第二氧化物层和第一硅层以暴露第一氧化物层,由此获得具有多个指状物的第一电极。 氧化物层形成在第一电极的横向部分处。 然后,通过蚀刻形成在第二硅层上的第四氧化物层和第二硅层来形成第二电极。 之后,去除第一氧化物层,第二氧化物层,横向氧化物层,第四氧化物层和氮化物层,由此实现微尺寸驱动装置。
    • 4. 发明授权
    • 수동 매트릭스-어드레스 가능한 메모리 장치
    • 被动矩阵可寻址存储器
    • KR100913424B1
    • 2009-08-21
    • KR1020080063307
    • 2008-07-01
    • 한국과학기술원
    • 이희철김우영황치호이용수김상율가두연
    • G11C11/22B82Y30/00
    • G11C11/22
    • A passive matrix-addressable memory apparatus is provided to continually maintain the data state of memory cell by minimizing the interference. A memory device comprises the first electrode line(210), the second electrode line(220), a memory unit(100), and switches(310,320,330). The first electrode line is arranged to be parallel each other. The second electrode lines are arranged to intersect the first electrode lines. The memory unit is arranged between first electrode lines and the second electrode lines. The memory unit has the material which electrically can polarize while having the hysteresis. The switch is arranged between the first electrode lines and the memory unit. The switch is electrically connected to the first electrodes and the memory unit. The first electrodes are electrically connected to the first electrode lines while having the cantilever form. The switch has the second electrodes facing the first electrodes.
    • 提供无源矩阵寻址存储装置,通过最小化干扰来连续地维持存储单元的数据状态。 存储器件包括第一电极线(210),第二电极线(220),存储器单元(100)和开关(310,320,330)。 第一电极线被布置为彼此平行。 第二电极线布置成与第一电极线相交。 存储单元布置在第一电极线和第二电极线之间。 存储单元具有能够具有滞后性的电极化的材料。 开关布置在第一电极线和存储器单元之间。 开关电连接到第一电极和存储单元。 第一电极与第一电极线电连接,同时具有悬臂形式。 开关具有面向第一电极的第二电极。
    • 5. 发明授权
    • 트렌스듀서와 이를 이용한 응용 소자 및 그 제조 방법
    • 传感器及其各种适用的装置及其制造方法
    • KR100805756B1
    • 2008-02-21
    • KR1020060078936
    • 2006-08-21
    • 한국과학기술원
    • 권일웅황치호김태식이용수이희철
    • H01L31/10H01P1/161
    • H01L31/101H01L31/18
    • A transducer, an application device using the same and a manufacturing method thereof are provided to isolate an absorbent from a substrate thermally by separating a driving unit from a signal unit. First and second conductive layers(120,130) are formed on a substrate(110), and are spaced apart from each other. An absorbent(140) is formed on the first and second conductive layers at a predetermined interval, and is electrically floated. A driving unit(150) supports the absorbent to adjust the interval of the absorbent, and has a bimaterial member. One end of the driving unit is connected to the absorbent, and the other end is connected to the substrate. The first and second conductive layers are connected to each other by a circuit.
    • 提供换能器,使用该换能器的应用装置及其制造方法,通过将驱动单元与信号单元分离来将吸收剂与基板热隔离。 第一和第二导电层(120,130)形成在基板(110)上并且彼此间隔开。 吸收剂(140)以预定的间隔形成在第一和第二导电层上,并且被电漂浮。 驱动单元(150)支撑吸收剂以调节吸收剂的间隔,并且具有双重材料构件。 驱动单元的一端与吸收体连接,另一端与基板连接。 第一和第二导电层通过电路彼此连接。
    • 7. 发明公开
    • 미소 구동기 제조방법
    • 制造微尺寸驱动装置的方法
    • KR1020030077791A
    • 2003-10-04
    • KR1020020016681
    • 2002-03-27
    • 한국과학기술원
    • 이춘섭이재덕황치호한철희
    • B81B7/00
    • B81C1/00015B81B7/02B81B2201/03B81B2201/031B81B2203/0136B81C1/00349B81C1/00388B81C1/00555
    • PURPOSE: A method for fabricating a micro-sized driving device is provided to drive the micro-sized driving device with low operating voltage by allowing electrodes having a comb shape to have fine interval. CONSTITUTION: A substrate is firstly prepared. Then, a first oxide layer, a first silicon layer, a second oxide layer, a nitride layer and a third oxide layer are sequentially deposited on the substrate. A first electrode pattern is formed on the third oxide layer by using a photosensitive film. The third oxide layer, the nitride layer, the second oxide layer and the first silicon layer are etched along the first electrode pattern in order to expose the first oxide layer, thereby obtaining a first electrode having a plurality of fingers. An oxide layer is formed at a lateral portion of the first electrode. Then, a second electrode is formed by etching a fourth oxide layer and a second silicon layer formed on the second silicon layer. After that, the first oxide layer, the second oxide layer, the lateral oxide layer, the fourth oxide layer and the nitride layer are removed, thereby achieving a micro-sized driving device.
    • 目的:提供一种制造微型驱动装置的方法,通过允许具有梳形形状的电极具有精细的间隔来驱动具有低工作电压的微型驱动装置。 构成:首先制备底物。 然后,在衬底上依次沉积第一氧化物层,第一硅层,第二氧化物层,氮化物层和第三氧化物层。 通过使用感光膜在第三氧化物层上形成第一电极图案。 沿着第一电极图案蚀刻第三氧化物层,氮化物层,第二氧化物层和第一硅层,以暴露第一氧化物层,从而获得具有多个指状物的第一电极。 在第一电极的侧部形成氧化物层。 然后,通过蚀刻形成在第二硅层上的第四氧化物层和第二硅层来形成第二电极。 之后,去除第一氧化物层,第二氧化物层,横向氧化物层,第四氧化物层和氮化物层,从而实现微型驱动装置。