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1. 发明公开

KR1020110121301A 포토레지스트 조성물, 이를 이용한 패턴 형성 방법 및 박막 트랜지스터 기판의 제조 방법 无效
标题翻译：光刻胶组合物，形成图案的方法和使用其制造薄膜晶体管基板的方法
公开(公告)号：KR1020110121301A
公开(公告)日：2011-11-07
申请号：KR1020100040837
申请日：2010-04-30
申请人： 삼성디스플레이 주식회사 , 동우 화인켐 주식회사
发明人： 홍필순 , 박귀현 , 주진호 , 송진호 , 김상태 , 김성현 , 장원영 , 윤종흠 , 이은상 , 임민주
IPC分类号： G03F7/022 , H01L21/027
CPC分类号： H01L27/1288 , G03F7/0226 , G03F7/0236 , G03F7/085 , G03F7/40 , H01L21/32139 , H01L27/1214 , H01L21/0274
摘要： PURPOSE: A photo-resist composition, a method for forming patterns using the same, and a method for manufacturing a thin film transistor substrate using the same are provided to prevent the delamination of photo-resist patterns after an etching process. CONSTITUTION: A photo-resist composition includes an alkali soluble resin, a photo-sensitive compound, a compound represented by chemical formula 1, and a solvent. In the chemical formula 1, the R is hydrogen C1-C1 alkyl group, C4-C8 cycloalkyl group, or benzene group. A method for forming patterns using the composition includes the following: A photo-resist film is formed on a film to be etched by applying the composition. The photo-resist film is exposed by the irradiation of light. The photo-resist film is developed to form photo-resist patterns. The photo-resist pattern is used as an etching mask to etch the film to be etched.
摘要翻译：目的：提供光致抗蚀剂组合物，使用其形成图案的方法以及使用其制造薄膜晶体管基板的方法，以防止在蚀刻工艺之后的光致抗蚀剂图案的分层。构成：光致抗蚀剂组合物包括碱溶性树脂，光敏化合物，化学式1表示的化合物和溶剂。在化学式1中，R是氢C1-C1烷基，C4-C8环烷基或苯基。使用该组合物形成图案的方法包括以下：通过施加该组合物在待蚀刻的膜上形成光致抗蚀剂膜。通过照射光使光致抗蚀剂膜曝光。显影光致抗蚀剂膜以形成光刻胶图案。光刻胶图案用作蚀刻掩模以蚀刻待蚀刻的膜。

2. 发明公开

KR1020160025125A 감광성 수지 조성물 및 이를 이용하여 제조된 유기막을 포함하는 표시장치 审中-实审
标题翻译：包含使用其制造的有机层的感光性树脂组合物和显示装置
公开(公告)号：KR1020160025125A
公开(公告)日：2016-03-08
申请号：KR1020140111494
申请日：2014-08-26
申请人： 삼성디스플레이 주식회사 , 동우 화인켐 주식회사
发明人： 강훈 , 박철원 , 정양호 , 김재성 , 주진호 , 김종백 , 박한우 , 백기범 , 양돈식 , 임민주
IPC分类号： G03F7/075 , G03F7/085
CPC分类号： G03F7/033 , C07D409/12 , C07D498/04 , C08F2/50 , C08L79/08 , G03F7/0045 , G03F7/0233 , G03F7/027
摘要： 본발명의일 실시예는감광성수지조성물, 이를이용하여만들어진유기막을포함하는표시장치를제공한다.
摘要翻译：提供一种感光性树脂组合物和包含通过使用该有机膜的有机膜的显示装置。为此，感光性树脂组合物包含：5-50重量％的粘合剂树脂; 0.01-10重量％的光酸产生剂; 0.01-2重量％的偶联剂; 和残留溶剂。更具体地说，提供一种确保生产与具有硅酮基表面的基材具有优异粘合性的有机膜的感光性树脂组合物。

3. 发明授权

KR102122075B1 감광성 수지 조성물 및 이를 이용하여 제조된 유기막을 포함하는 표시장치 有权
公开(公告)号：KR102122075B1
公开(公告)日：2020-06-12
申请号：KR1020140111494
申请日：2014-08-26
申请人： 삼성디스플레이 주식회사 , 동우 화인켐 주식회사
发明人： 강훈 , 박철원 , 정양호 , 김재성 , 주진호 , 김종백 , 박한우 , 백기범 , 양돈식 , 임민주
IPC分类号： G03F7/033 , C07D498/04 , G03F7/004 , G03F7/023 , C08F2/50 , C08L79/08 , C07D409/12 , G03F7/027

4. 发明授权

KR100455652B1 포지티브형 포토레지스트 막의 제조방법 有权
标题翻译： 포지티브형포토레지스트막의제조방법
公开(公告)号：KR100455652B1
公开(公告)日：2004-11-06
申请号：KR1019990037690
申请日：1999-09-06
申请人： 동우 화인켐 주식회사 , 삼성전자주식회사
发明人： 주진호 , 이유경 , 박홍식 , 나윤정 , 김기수 , 강성철
IPC分类号： H01L21/027
CPC分类号： G03F7/0048 , G03F7/0226 , G03F7/162
摘要： A method for preparing a positive photoresist layer is provided. In this method, a photoresist composition is drop-wise applied on an insulator layer or a conductive metal layer formed on a substrate. The photoresist composition includes a polymer resin, a sensitizer for changing solubility of the photoresist layer when exposed and a solvent. The coated substrate is rotated at the speed of 1,250 to 1,350 rpm for 4.2 to 4.8 seconds. The coated substrate is then dried and the dried substrate is exposed to some form of radiation. Next, the exposed portion is removed by using an alkaline developing solution. The solvent preferably includes 3-methoxybutyl acetate and 4-butyrolactone, or includes 3-methoxybutyl acetate, 2-heptanone, and 4-butyrolactone.
摘要翻译：提供了制备正型光刻胶层的方法。在该方法中，将光致抗蚀剂组合物逐滴施加在形成在基板上的绝缘层或导电金属层上。光致抗蚀剂组合物包含聚合物树脂，用于改变曝光时光致抗蚀剂层的溶解性的敏化剂和溶剂。涂布的基材以1250至1350rpm的速度旋转4.2至4.8秒。然后干燥涂覆的基材并将干燥的基材暴露于某种形式的辐射。接下来，使用碱性显影液除去曝光部分。溶剂优选包括乙酸3-甲氧基丁酯和4-丁内酯，或者包括乙酸3-甲氧基丁酯，2-庚酮和4-丁内酯。

5. 发明公开

KR1020010026391A 포지티브형 포토레지스트 막의 제조방법 有权
标题翻译：制作光电子层的方法
公开(公告)号：KR1020010026391A
公开(公告)日：2001-04-06
申请号：KR1019990037690
申请日：1999-09-06
申请人： 동우 화인켐 주식회사 , 삼성전자주식회사
发明人： 주진호 , 이유경 , 박홍식 , 나윤정 , 김기수 , 강성철
IPC分类号： H01L21/027
CPC分类号： G03F7/0048 , G03F7/0226 , G03F7/162
摘要： PURPOSE: A method for manufacturing a positive photoresist layer is provided to shorten process time, by operating a spin coater at a high speed, and by carrying out sufficient exposure even with a little quantity of exposure. CONSTITUTION: A positive photoresist composition includes polymer resin, a photosensitive compound and a solvent. The polymer resin is formed on an insulating layer or conductive metal layer formed on a substrate. The photosensitive compound changes solubility of a photoresist layer by exposure. The photoresist composition is coated by accelerating the substrate for 4.2 to 4.8 seconds to make the substrate rotate at a rate from 1250 to 1350 revolutions per minute. The coated composition is dried. An exposure process is performed regarding the dried composition. The composition near the exposure portion is eliminated by using alkaline developing liquid.
摘要翻译：目的：提供一种用于制造正性光致抗蚀剂层的方法，以通过高速操作旋转涂布机，以及甚至在少量曝光的情况下进行足够的曝光来缩短处理时间。构成：正性光致抗蚀剂组合物包括聚合物树脂，光敏化合物和溶剂。聚合物树脂形成在形成在基板上的绝缘层或导电金属层上。光敏化合物通过曝光改变光致抗蚀剂层的溶解度。通过将基板加速4.2至4.8秒来涂覆光致抗蚀剂组合物，以使基板以1250至1350转每分钟的速度旋转。将涂覆的组合物干燥。对干燥的组合物进行曝光处理。通过使用碱性显影液来消除曝光部分附近的组成。

6. 发明授权

KR100299689B1 포지티브형 포토레지스트 조성물 有权
标题翻译：正型光刻胶组合物
公开(公告)号：KR100299689B1
公开(公告)日：2001-09-13
申请号：KR1019990036321
申请日：1999-08-30
申请人： 동우 화인켐 주식회사 , 삼성전자주식회사
发明人： 주진호 , 이유경 , 박홍식 , 나윤정 , 김기수 , 강성철
IPC分类号： G03F7/039
CPC分类号： G03F7/0048 , G03F7/0226
摘要： 본발명은감광속도, 잔막율등이우수하고, 악취의발생량이적어작업환경을개선할수 있는포토레지스트조성물로서, 포토레지스트막을형성하기위한고분자수지, 노광에의하여포토레지스트막의용해도를변화시키는감광성화합물및 용매로서 3-메톡시부틸아세테이트및 4-부티로락톤을포함하는포지티브형포토레지스트조성물을제공한다.
摘要翻译：本发明的光敏化合物和用于改变成膜速度快，残留涂膜等yiwoosu和，作为可写下来产生气味改善工作环境的量的光致抗蚀剂组合物，用于形成膜的光致抗蚀剂聚合物树脂，通过曝光光刻胶膜的溶解度以及包含乙酸3-甲氧基丁酯和4-丁内酯作为溶剂的正型光刻胶组合物。

7. 发明授权

KR100299688B1 포지티브형 포토레지스트 조성물 有权
标题翻译：积极工作光电组合物
公开(公告)号：KR100299688B1
公开(公告)日：2001-09-13
申请号：KR1019990036320
申请日：1999-08-30
申请人： 동우 화인켐 주식회사 , 삼성전자주식회사
发明人： 주진호 , 이유경 , 박홍식 , 나윤정 , 김기수 , 강성철
IPC分类号： G03F7/039
CPC分类号： G03F7/0048 , G03F7/0226
摘要： 본발명은감광속도, 잔막율등이우수하고, 악취의발생량이적어작업환경을개선할수 있는포토레지스트조성물로서, 포토레지스트막을형성하기위한고분자수지, 노광에의하여포토레지스트막의용해도를변화시키는감광성화합물및 용매로서 3-메톡시부틸아세테이트, 2-헵탄온과 4-부티로락톤을포함하는포지티브형포토레지스트조성물을제공한다.

8. 发明公开

KR1020010019745A 포지티브형 포토레지스트 조성물 有权
标题翻译：正极型光电组合物
公开(公告)号：KR1020010019745A
公开(公告)日：2001-03-15
申请号：KR1019990036321
申请日：1999-08-30
申请人： 동우 화인켐 주식회사 , 삼성전자주식회사
发明人： 주진호 , 이유경 , 박홍식 , 나윤정 , 김기수 , 강성철
IPC分类号： G03F7/039
CPC分类号： G03F7/0048 , G03F7/0226
摘要： PURPOSE: Provided is a positive type photoresist composition useful in formation of photoresist film for liquid crystal display circuit and/or microcircuit used in semiconductor area by comprising polymer resin and sensitive compound and reducing bad smell. CONSTITUTION: A positive type photoresist composition comprises polymer resin to form photoresist film, sensitive compound to alterate solubility of the film and solvent such as 3-methoxybutylacetate and 4-butyrolactone. The composition preferably contains novolak resin as the polymer resin, diazide compound as the sensitive compound. The 3-methoxybutylacetate and 4-butyrolactone are blended, by weight part, in a ratio of 60-80 : 2-10. The positive type photoresist composition effects industrial application because of its excellent properties such as sensing rate, residual rate, resolution and/or adhesiveness to substrate.
摘要翻译：目的：提供一种正型光致抗蚀剂组合物，其可用于形成用于半导体领域的液晶显示电路和/或微电路的光致抗蚀剂膜，其包含聚合物树脂和敏感化合物，并减少不良气味。构成：正型光致抗蚀剂组合物包含聚合物树脂以形成光致抗蚀剂膜，敏化剂以改变膜的溶解性和溶剂如3-甲氧基丁酸乙酯和4-丁内酯。组合物优选含有酚醛清漆树脂作为聚合物树脂，重氮化合物作为敏感化合物。将3-甲氧基丁酸乙酯和4-丁内酯按重量比例混合，比例为60-80：2-10。正型光致抗蚀剂组合物由于其优异的性能如感光速率，残留率，分辨率和/或对基材的粘附性而具有工业应用。

9. 发明公开

KR1020010019744A 포지티브형 포토레지스트 조성물 有权
标题翻译：正极型光电组合物
公开(公告)号：KR1020010019744A
公开(公告)日：2001-03-15
申请号：KR1019990036320
申请日：1999-08-30
申请人： 동우 화인켐 주식회사 , 삼성전자주식회사
发明人： 주진호 , 이유경 , 박홍식 , 나윤정 , 김기수 , 강성철
IPC分类号： G03F7/039
CPC分类号： G03F7/0048 , G03F7/0226
摘要： PURPOSE: A positive type photoresist composition is useful in formation of photoresist film for liquid crystal display circuit and/or microcircuit used in semiconductor area by improving sensing rate and residual rate and reducing bad smell. CONSTITUTION: A positive type photoresist composition comprises polymer resin to form photoresist film, sensitive compound to alterate solubility of the film and solvent such as 3-methoxybutylacetate, 2-heptanone and 4-butyrolactone. The composition preferably contains novolak resin as the polymer resin, diazide compound as the sensitive compound. The 3-methoxybutylacetate, 2-heptanone and 4-butyrolactone are blended, by weight part, in a ratio of 50-70:5-15:2-10. The diazide compound is prepared by reacting polyhydroxy benzophenone and 1,2-naphthoquinone diazide, 2-diazo- 1-naphthol-5-sulphonic acid.
摘要翻译：目的：正型光致抗蚀剂组合物可用于形成用于半导体领域的液晶显示电路和/或微电路的光致抗蚀剂膜，通过提高感测速率和残留率，减少不良气味。构成：正型光致抗蚀剂组合物包含聚合物树脂以形成光致抗蚀剂膜，敏化化合物以改变膜的溶解性和溶剂，例如3-甲氧基丁酸乙酯，2-庚酮和4-丁内酯。组合物优选含有酚醛清漆树脂作为聚合物树脂，重氮化合物作为敏感化合物。将3-甲氧基丁酸乙酯，2-庚酮和4-丁内酯以50-70:5-15:2-10:10的比例重量份混合。二叠氮化合物通过多羟基二苯甲酮和1,2-重氮萘-1-磺酸1,2-重氮萘醌反应来制备。

10. 发明授权

KR102261638B1 세정제 조성물 및 이를 이용한 금속배선 제조방법 有权
公开(公告)号：KR102261638B1
公开(公告)日：2021-06-08
申请号：KR1020130139327
申请日：2013-11-15
申请人： 엘티씨에이엠 주식회사 , 삼성디스플레이 주식회사
发明人： 김봉연 , 주진호 , 우준혁 , 송정환 , 이석호 , 전성식 , 한종수
IPC分类号： C23G1/02 , C23F11/00

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