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    • 1. 发明公开
    • 포토레지스트 조성물 및 이를 이용한 표시 기판의 제조 방법
    • 光电组合物和使用光电组合物制造显示基板的方法
    • KR1020110045418A
    • 2011-05-04
    • KR1020090101988
    • 2009-10-27
    • 삼성디스플레이 주식회사동우 화인켐 주식회사
    • 박정민이정수장원영이은상유인호김성현
    • G03F7/023G03F7/00G03F7/022G03F7/038H01L27/12
    • H01L27/1288G03F7/0007G03F7/0226G03F7/0233H01L27/1214Y10S438/948G03F7/0385
    • PURPOSE: A photo-resist composition and a method for manufacturing a display substrate using the same are provided to strip a photo-resist pattern and minimize the generation possibility of cracks in the photo-resist pattern. CONSTITUTION: A photo-resist composition includes an alkaline soluble resin, a dissolution inhibitor containing a quinine diazide-based compound, a first additive containing a benzenol-based compound, a second additive containing acrylic copolymer, and an organic solvent. The benzenol-based compound is represented by chemical formula 1. The acrylic copolymer is represented by chemical formula 2. In the chemical formula 1, R1, R2, and R3 are respectively hydrogen, hydroxyl group, C1 to C1 alkyl group, or C1 to C10 alkyl hydroxyl group. One of the R1 to R3 is hydroxyl group. In the chemical formula 2, R4 to R6 is respectively hydrogen atom or C1 to C3 alkyl group. R7 represents hydrogen atom substituted or non-substituted C1 to C6 hydro carbon, and R8 represents benzyl group or phenyl group. m, n, and k are respectively natural number of 1 to 99. m+n+k is 100.
    • 目的:提供光致抗蚀剂组合物和使用该光致抗蚀剂组合物的显示基板的制造方法,以剥离光致抗蚀剂图案并使光致抗蚀剂图案中的裂纹的产生可能性最小化。 构成:光致抗蚀剂组合物包括碱溶性树脂,含有奎宁重氮化合物的溶解抑制剂,含有苯酚类化合物的第一添加剂,含有丙烯酸共聚物的第二添加剂和有机溶剂。 苯酚类化合物由化学式1表示。丙烯酸共聚物由化学式2表示。在化学式1中,R 1,R 2和R 3分别为氢,羟基,C 1至C 1烷基或C 1至 C10烷基羟基。 R1至R3之一是羟基。 在化学式2中,R 4至R 6分别为氢原子或C 1至C 3烷基。 R 7表示氢原子取代或未取代的C1〜C6氢碳,R8表示苄基或苯基。 m,n和k分别为1〜99的自然数。m + n + k为100。
    • 4. 发明授权
    • 포지티브형 포토레지스트 조성물 및 이를 이용한 포토레지스트 패턴 형성방법
    • 正型光刻胶组合物及使用其的光刻胶图案形成方法
    • KR101791265B1
    • 2017-10-30
    • KR1020100126680
    • 2010-12-13
    • 동우 화인켐 주식회사
    • 임민주이은상김성현
    • G03F7/039H01L21/027
    • 본발명은알칼리가용성수지; 감광성화합물; 하기화학식 1의화합물; 및용매를포함하여하부기판, 예컨대구리계또는몰리브덴계금속막과의밀착성을개선한포지티브형포토레지스트조성물및 이를이용한포토레지스트패턴형성방법에관한것이다. [화학식 1]상기화학식 1에서, R및 R는각각독립적으로탄소수 1 내지 10의알킬기로치환또는비치환된탄소수 1 내지 10의알킬렌기; 탄소수 1 내지 10의알킬기로치환또는비치환된탄소수 2 내지 10의알케닐렌기; 또는탄소수 1 내지 10의알킬기로치환또는비치환된탄소수 2 내지 10의알키닐렌기이고, X는수소또는탄소수 1 내지 10의알킬기이다.
    • 本发明涉及一种碱溶性树脂; 光敏化合物; 下式1的化合物; 以及溶剂,以及使用其形成光刻胶图案的方法。背景技术 其中R和R各自独立地表示未取代的或被具有1至10个碳原子的烷基取代的具有1至10个碳原子的亚烷基; 具有1至10个碳原子的烷基取代或未取代的具有2至10个碳原子的亚烯基; 或者被具有1-10个碳原子的烷基取代或未被取代的具有2-10个碳原子的亚炔基,并且X是氢或具有1-10个碳原子的烷基。
    • 6. 发明公开
    • 포지티브 포토레지스트 조성물
    • 积极的光电组成
    • KR1020120068461A
    • 2012-06-27
    • KR1020100130095
    • 2010-12-17
    • 동우 화인켐 주식회사
    • 윤종흠김성현성시진송인각
    • G03F7/039G03F7/004
    • G03F7/0392G03F7/004G03F7/0045G03F7/022G03F7/039
    • PURPOSE: A positive photo-resist composition is provided to improve sensitivity and to reduce failure rate by stably securing thermal distribution. CONSTITUTION: A positive photo-resist composition includes a first alkali soluble resin represented by chemical formula 1, a second alkali soluble resin, a dissolution inhibitor, and a solvent. The polystyrene-reduced weight average molecular weight of the first alkali soluble resin is between 1,000 and 5,000. In chemical formula 1, R9 to R14 are respectively hydrogen atoms, C1 to C6 linear or branched alkyl groups, C1 to C6 linear or branched alkoxy groups, or C3 to C6 cycloalkyl groups; R16 to R18 are respectively selected from a group including hydrogen atoms, C1 to C6 linear or branched alkyl groups, and C6 to C18 aryl groups; N is 10 to 200.
    • 目的:提供正光致抗蚀剂组合物,以通过稳定地确保热分布来提高灵敏度和降低故障率。 构成:正型光致抗蚀剂组合物包括由化学式1表示的第一碱溶性树脂,第二碱溶性树脂,溶解抑制剂和溶剂。 第一碱溶性树脂的聚苯乙烯换算的重均分子量为1,000-5,000。 在化学式1中,R 9至R 14分别为氢原子,C 1至C 6直链或支链烷基,C 1至C 6直链或支链烷氧基或C 3至C 6环烷基; R16〜R18分别选自氢原子,C1〜C6直链或支链烷基和C6〜C18芳基; N为10〜200。
    • 7. 发明公开
    • 포지티브형 포토레지스트 조성물 및 이를 이용한 포토레지스트 패턴 형성방법
    • 使用它的光电子体的正电子成像组合物和图案方法
    • KR1020120065513A
    • 2012-06-21
    • KR1020100126680
    • 2010-12-13
    • 동우 화인켐 주식회사
    • 임민주이은상김성현
    • G03F7/039H01L21/027
    • G03F7/0395G03F7/004H01L21/0273H01L21/0274
    • PURPOSE: A positive type photoresist composition and a method for forming a photoresist pattern using the same are provided to prevent the pattern exfoliation and pattern collapse and to improve dispersibility. CONSTITUTION: A positive type photoresist composition includes 10 to 30 weight% of an alkali soluble resin, 1 to 15 weight% of a photo-sensitive compound, 0.01 to 0.1 weight% of a compound represented by chemical formula 1, and a solvent. In chemical formula 1, R1 and R2 are respectively C1 to C10 alkyl group substituted or non-substituted C1 to C10 alkylene group; C1 to C10 alkyl group substituted or non-substituted C2 to C10 alkenylene group; or C1 to C10 alkyl group substituted or non-substituted C2 to C10 alkynylene group; X is a hydrogen atom or a C1 to C10 alkyl group. The alkali soluble resin is a novolak resin. The photo-sensitive composition is the ester compound of a phenolic compound with a hydroxyl group and a diazide-based compound.
    • 目的:提供正型光致抗蚀剂组合物和使用其形成光致抗蚀剂图案的方法,以防止图案剥离和图案塌陷并提高分散性。 构成:正型光致抗蚀剂组合物包含10〜30重量%的碱溶性树脂,1〜15重量%的感光性化合物,0.01〜0.1重量%的化学式1表示的化合物和溶剂。 在化学式1中,R1和R2分别为C1至C10烷基取代或未取代的C1至C10亚烷基; C1至C10烷基取代或未取代的C2至C10亚烯基; 或C 1至C 10烷基取代或未取代的C 2至C 10亚炔基; X是氢原子或C1〜C10烷基。 碱溶性树脂是酚醛清漆树脂。 光敏组合物是具有羟基的酚类化合物和二叠氮基化合物的酯化合物。
    • 8. 发明公开
    • 포지티브 포토레지스트 조성물
    • 一个积极的光电组成
    • KR1020110035528A
    • 2011-04-06
    • KR1020090093295
    • 2009-09-30
    • 동우 화인켐 주식회사
    • 이은상임민주진성열김성현
    • G03F7/023G03F7/039G03F7/038C08F2/48
    • G03F7/023C08F2/48G03F7/0381G03F7/0385G03F7/0392Y10S430/1055
    • PURPOSE: A positive photo-resist composition is provided to overcome the damage of substrates and metal films in a four masks-based dry etching process by forming patterns into a nearly vertical shape. CONSTITUTION: A positive photo-resist composition includes an alkaline soluble resin, a photo-resist agent, an additive containing a compound represented by chemical formula 1, and a solvent. In the chemical formula 1, R1, R2, and R3 are respectively H or a group represented by chemical formula 2. The alkaline soluble resin is a novolak resin. The photo-resist agent is the ester compound of a phenolic compound containing hydroxyl group and a quinone diazide sulfonic acid compound. The solvent is one or more, or two or more selected from a group including glycol ether ester, glycol ether, ester, ketone, and cyclic ester.
    • 目的:提供正型光致抗蚀剂组合物,以通过将图案形成几乎垂直的形状来克服基于四个基于掩模的干蚀刻工艺中的基板和金属膜的损伤。 构成:正型光致抗蚀剂组合物包括碱溶性树脂,光致抗蚀剂,含有由化学式1表示的化合物的添加剂和溶剂。 在化学式1中,R1,R2和R3分别为H或由化学式2表示的基团。碱溶性树脂是酚醛清漆树脂。 光致抗蚀剂是含羟基的酚类化合物和醌二叠氮磺酸化合物的酯化合物。 溶剂是选自包括乙二醇醚酯,二醇醚,酯,酮和环酯的一个或多个或两个或更多个。