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    • 1. 发明公开
    • 무납 주석 합금 전기도금 조성물 및 방법
    • 无铅钛合金电镀组合物及方法
    • KR1020100080481A
    • 2010-07-08
    • KR1020090134621
    • 2009-12-30
    • 롬 앤드 하스 일렉트로닉 머트어리얼즈 엘엘씨
    • 뤄위브라운네일디.토벤마이클피.
    • C25D3/34
    • C23C18/54C25D3/60C25D3/34
    • PURPOSE: A lead-free tin alloy electroplating composition and a method thereof are provided to create tin alloying composition having little bubbling by plating tin alloy at high current density and plating rate. CONSTITUTION: A lead-free tin alloy electroplating composition comprises one or more tin ion supply sources, one or more alloy metal supply sources, one or more flavone compounds, and one or more compositions having chemical formula HOR(R")SR'SR(R")OH. The alloy metal ion supply source is selected from a group consisting of silver ion, copper ion and bismuth ion. R, R' and R" are the same or different in the chemical formula. The composition additionally includes one or more grain refiners/stabilizer compounds.
    • 目的:提供一种无铅锡合金电镀组合物及其制备方法,通过以高电流密度和电镀速率镀锡锡合金,制造出具有很少鼓泡性的锡合金组合物。 构成:无铅锡合金电镀组合物包含一种或多种锡离子供应源,一种或多种合金金属供应源,一种或多种黄酮化合物和一种或多种化学式为HOR(R“)SR'SR(R” R“)OH。 合金金属离子供体源选自银离子,铜离子和铋离子。 R,R'和R“在化学式中相同或不同。组合物另外包括一种或多种晶粒细化剂/稳定剂化合物。
    • 2. 发明公开
    • 전기도금 조성물 및 방법
    • 电镀组合物与基体上的钛合金的沉积物,用于在基板上沉积钛合金的方法,以及在半导体器件上形成互连保护的方法
    • KR1020040087883A
    • 2004-10-15
    • KR1020040023249
    • 2004-04-06
    • 롬 앤드 하스 일렉트로닉 머트어리얼즈 엘엘씨
    • 베이카로잘리아브라운네일디.왕카이
    • C25D3/30
    • C25D3/60H01L2224/11
    • PURPOSE: To provide an electroplating composition with deposition of tin alloy on a substrate, which is substantially free of lead and cyanide, forms an alloy with excellent mechanical properties, and is easily solderable and electrolytically co-deposited, a method for depositing tin alloy on a substrate, and a method for forming an interconnect bump on a semiconductor device. CONSTITUTION: The electrolyte composition for depositing a tin alloy on a substrate comprises tin ions, ions of one or more alloy metals, acid, thiourea derivative, and an additive selected from alkanol amine, polyethylene amine, alkoxylated aromatic alcohol and a mixture thereof. The method for forming an interconnect bump on a semiconductor device comprises a step(a) of providing a semiconductor die having a plural interconnect bump pads(102); a step(b) of forming a seed layer on the interconnect bump pads; a step(c) of contacting the semiconductor die with the electrolyte composition and flowing an electric current through the electrolyte composition, thereby depositing a tin alloy interconnect bump layer on a substrate(100) so that the tin alloy interconnect bump layer is deposited on the interconnect bump pads; and a step(d) of reflowing the interconnect bump layer.
    • 目的:提供一种电镀组合物,其在基本上不含铅和氰化物的基底上沉积锡合金,形成具有优异机械性能的合金,并且易于焊接和电解共沉积,将锡合金沉积在 衬底,以及在半导体器件上形成互连凸块的方法。 构成:用于在基材上沉积锡合金的电解质组合物包括锡离子,一种或多种合金金属的离子,酸,硫脲衍生物和选自烷醇胺,聚乙烯胺,烷氧基化芳族醇及其混合物的添加剂。 在半导体器件上形成互连凸点的方法包括提供具有多个互连凸块焊盘(102)的半导体管芯的步骤(a)。 在所述互连凸块上形成种子层的步骤(b); 将所述半导体管芯与所述电解质组合物接触并使电流流过所述电解质组合物的步骤(c),从而在基板(100)上沉积锡合金互连凸点层,以使所述锡合金互连凸点层沉积在所述电解质组合物上 互连凸块; 以及回流所述互连凸点层的步骤(d)。
    • 5. 发明公开
    • 복합 기판의 전기도금법
    • 在复合基板上选择性沉积锡或锡合金膜时使用的电解质和在复合基板上沉积锡或钛合金的方法
    • KR1020050018616A
    • 2005-02-23
    • KR1020040061271
    • 2004-08-04
    • 롬 앤드 하스 일렉트로닉 머트어리얼즈 엘엘씨
    • 토벤마이클피.브라운네일디.치라피시앵겔로
    • C25D3/30
    • H05K3/244C25D3/32C25D3/60H05K1/0306
    • PURPOSE: To provide a composition and a method for selectively electroplating tin or tin alloy on a composite substrate comprising a metal part and a ceramic part without reduction of adhesive force between the metal part and the ceramic part, wherein the composition contains constituents that do not damage adhesive force on a boundary surface of metal and ceramic. CONSTITUTION: A method for electroplating a composite substrate comprises a step of contacting the composite substrate with a composition comprising one or more tin or tin alloy sources selected from stannous organic sulfonate, stannous sulfate, stannous gluconate, stannous citrate, stannous lactate and stannous halide, one or more aromatic diols, at least one surfactant that is an alcohol ethoxylate, and one or more compounds, salts thereof or ester thereof having an amount of 15 to 55 gm/L represented as the following general formula: HOOCBCOOH where B is chemical bond or (-CH2-)n, and n is an integer of 1 to 4; and selectively depositing tin or tin alloy on a metal part on the composite substrate by generating an electric current in the composition.
    • 目的:提供一种组合物和方法,用于在包含金属部分和陶瓷部件的复合基材上选择性地电镀锡或锡合金,而不会降低金属部件和陶瓷部件之间的粘合力,其中组合物含有不含 损伤金属和陶瓷边界表面的粘合力。 组合物:复合基材的电镀方法包括使复合基材与包含一种或多种选自亚锡有机磺酸盐,硫酸锡,葡萄糖酸亚锡,柠檬酸亚锡,乳酸亚锡和卤化亚锡的一种或多种锡或锡合金源接触的步骤, 一种或多种芳族二醇,至少一种醇乙氧基化物的表面活性剂,以及一种或多种15至55gm / L的化合物,其盐或酯,其表示如下通式:HOOCBCOOH,其中B是化学键 或(-CH 2 - )n,n为1〜4的整数。 并通过在组合物中产生电流,将锡或锡合金选择性地沉积在复合衬底上的金属部分上。
    • 8. 发明公开
    • 유전체의 금속화
    • 电介质金属化
    • KR1020070058986A
    • 2007-06-11
    • KR1020060122051
    • 2006-12-05
    • 롬 앤드 하스 일렉트로닉 머트어리얼즈 엘엘씨
    • 스카라글리노프랭크소머월터브라운네일디.왕카이
    • C23C18/16C23C18/54C23C18/04
    • C23C18/48C23C18/1653C23C18/208C23C18/30C25D5/54Y10T428/31678
    • Compositions comprising one or more cerium(IV) ion sources, one or more silver(I) ion sources and one or more hydrogen ion sources, and a method comprising providing the composition, contacting a dielectric with the composition to activate the dielectric by conditioning the dielectric, and depositing a metal on the dielectric are provided. A composition comprises one or more cerium(IV) ion sources, one or more silver(I) ion sources and one or more hydrogen ion sources. The one or more cerium(IV) ion sources are selected from ammonium cerium nitrate, cerium tetrasulfate, ammonium cerium sulfate, cerium oxide, cerium sulfate, and cerium sulfate tetrahydrate. The one or more silver(I) ion sources are selected from silver nitrate, silver tetrafluoroborate, silver perchlorate, silver fluoride, silver acetate, silver carbonate, silver oxide, silver sulfate, and silver hydroxide. The one or more hydrogen ion sources are selected from sulfuric acid, nitric acid, hydrochloric acid, hydrofluoric acid, and phosphoric acid. A method comprises: (a) providing a composition comprising one or more cerium(IV) ion sources, one or more silver(I) ion sources and one or more hydrogen ion sources; (b) contacting a dielectric with the composition to activate the dielectric by conditioning the dielectric; and (c) depositing a metal on the dielectric.
    • 包含一种或多种铈(IV)离子源,一种或多种银离子源和一种或多种氢离子源的组合物,以及包括提供组合物的方法,使电介质与组合物接触以通过调节 电介质和在电介质上沉积金属。 组合物包含一种或多种铈(IV)离子源,一种或多种离子源(I)和一种或多种氢离子源。 一种或多种铈(IV)离子源选自硝酸铈铵,四硫酸铈,硫酸铈铵,氧化铈,硫酸铈和四水合硫酸铈。 一种或多种离子源(I)选自硝酸银,四氟硼酸银,高氯酸银,氟化银,乙酸银,碳酸银,氧化银,硫酸银和氢氧化银。 一个或多个氢离子源选自硫酸,硝酸,盐酸,氢氟酸和磷酸。 一种方法包括:(a)提供包含一种或多种铈(IV)离子源,一种或多种银离子源和一种或多种氢离子源的组合物; (b)使电介质与组合物接触以通过调节电介质来激活电介质; 和(c)在电介质上沉积金属。