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81. 发明授权

KR100823180B1 노광장치 有权
标题翻译：曝光装置
公开(公告)号：KR100823180B1
公开(公告)日：2008-04-18
申请号：KR1020070026692
申请日：2007-03-19
申请人： 주식회사 코디엠 , 이우영 , 김광선 , 김종원
发明人： 강흥석 , 이우영 , 김광선 , 김종원
IPC分类号： H01L21/027
CPC分类号： G03F7/70191 , G03F7/70316
摘要： An exposure apparatus is provided to adjust the quantity of light of a lamp by using an inexpensive light quantity adjusting part having a plurality of light transmission holes without using an expensive ND(neutral density) filter. A reflection plate collects the light generated from a lamp to reflect the collected light downward, installed in a chamber. A light quantity adjusting part(210) adjusts the quantity of light transferred from the reflection plate, installed under the reflection plate and capable of being changed. A pair of first and second reflection mirrors reflect the light having passed through the light quantity adjusting part in both lateral directions. A pair of lenses collects the light transferred as a dispersed state through the second reflection mirror to transfer the collected light to the edge of the substrate. A sub chamber can guarantee the path of parallel light transferred to the first reflection mirror, connected to the lower part of the chamber, and the light quantity adjusting part can be installed in the sub chamber.
摘要翻译：提供一种曝光装置，通过使用具有多个透光孔的便宜的光量调节部件，而不使用昂贵的ND（中性密度）滤光片来调节灯的光量。反射板收集从灯产生的光以将收集的光向下反射，安装在室中。光量调节部（210）调整从安装在反射板的下方的能够变化的反射板传递的光量。一对第一反射镜和第二反射镜在两个横向上反射通过光量调节部分的光。一对透镜通过第二反射镜收集作为分散状态传送的光，以将收集的光转移到基板的边缘。子室可以保证传送到第一反射镜的平行光的路径，连接到室的下部，并且光量调节部可以安装在子室中。

82. 发明授权

KR100818424B1 노광 에너지 자동 조절 방법 失效
标题翻译：自动控制暴露能量的方法
公开(公告)号：KR100818424B1
公开(公告)日：2008-04-01
申请号：KR1020060135896
申请日：2006-12-28
申请人： 동부일렉트로닉스 주식회사
发明人： 이동진
IPC分类号： H01L21/027
CPC分类号： G03F7/70558 , G03F7/7015 , G03F7/70316
摘要： A method for automatically adjusting exposure energy is provided to reduce rework caused by an adjustment error of exposure energy by grouping exposure parameters and by forming a database with respect to the energy fluctuation of each grouping. Wafer lots for performing an exposure process are grouped into a plurality of groups according to the parameter values of an exposure process. The parameter values can include the kind and thickness of photoresist, a bake temperature and the information of a laser source. The fluctuation of the exposure energy of each grouping is databased. The exposure energy of each grouped wafer lot is automatically adjusted in an exposure process by using the information of the database(S108,S120).
摘要翻译：提供了一种用于自动调节曝光能量的方法，用于通过分组曝光参数和通过形成关于每个分组的能量波动的数据库来减少由曝光能量的调整误差引起的返工。根据曝光处理的参数值将用于进行曝光处理的晶片批次分组成多个组。参数值可以包括光刻胶的种类和厚度，烘烤温度和激光源的信息。每个组的曝光能量的波动是数据库。通过使用数据库的信息，在曝光处理中自动调整每个分组的晶片批次的曝光能量（S108，S120）。

83. 发明公开

KR1020080001201A 노광 장비, 노광 방법 및 이를 이용한 반도체 소자의 제조방법 无效
标题翻译：曝光装置，曝光方法及使用其制造半导体器件的方法
公开(公告)号：KR1020080001201A
公开(公告)日：2008-01-03
申请号：KR1020060059373
申请日：2006-06-29
申请人： 에스케이하이닉스 주식회사
发明人： 오순호 , 정헌록
IPC分类号： H01L21/027
CPC分类号： G03F7/70316 , G03F7/70158 , G03F7/7075
摘要： An exposure apparatus, an exposure method, and a method for manufacturing a semiconductor device using the same are provided to prevent distortion of patterns due to unnecessary noise by using only the diffracted light on an exposure mask. An exposure apparatus comprises an exposure mask(100), a focusing lens(110), and a wafer stage(130). A variable chopper(120) is installed between the focusing lens and the wafer stage to perform a pulsing process to a frequency corresponding to a wavelength of the diffracted light. A lock-in amplifier(140) is connected to the variable chopper to transmit a signal having the same frequency as the frequency of the variable chopper. The variable chopper has a frequency control function. The frequency has a range of 0.0027 to 0.0052 Hz.
摘要翻译：提供曝光装置，曝光方法以及使用其的半导体装置的制造方法，以通过仅在曝光掩模上使用衍射光来防止由于不必要的噪声引起的图案的失真。曝光装置包括曝光掩模（100），聚焦透镜（110）和晶片台（130）。可变斩波器（120）安装在聚焦透镜和晶片台之间，以对与衍射光的波长相对应的频率执行脉冲处理。锁定放大器（140）连接到可变斩波器以传输具有与可变斩波器的频率相同频率的信号。变频斩波器具有频率控制功能。频率范围为0.0027至0.0052 Hz。

84. 发明公开

KR1020070092327A 노광 방법 및 장치, 및 전자 장치 제조 방법 失效
标题翻译：曝光方法和装置，以及电子装置制造方法
公开(公告)号：KR1020070092327A
公开(公告)日：2007-09-12
申请号：KR1020077018580
申请日：2006-01-13
申请人： 가부시키가이샤 니콘
发明人： 시라이시나오마사
IPC分类号： H01L21/027 , G03F7/20
CPC分类号： G03F7/70408 , G03F7/70316 , G03F7/7035 , G03F7/70341
摘要： A high resolution and low-cost exposure method suitable for forming a fine pattern configuring an electronic device. A diffraction grating is arranged adjacent to a wafer, or the like, which configures the electronic device, and wafer exposure is performed by irradiating the wafer with illuminating light having a specific incidence angle characteristic to the diffraction grating. The exposure is performed by changing a positional relationship between the semiconductor wafer and the diffraction grating when required.
摘要翻译：适用于形成配置电子设备的精细图案的高分辨率和低成本曝光方法。衍射光栅被布置成与配置电子设备的晶片等相邻，并且通过用衍射光栅具有特定入射角特性的照明光照射晶片来进行晶片曝光。当需要时，通过改变半导体晶片和衍射光栅之间的位置关系来进行曝光。

85. 发明授权

KR100699858B1 극자외선 리소그래피용 반사 디바이스 및 그 제조 방법 및이를 적용한 극자외선 리소그래피용 마스크, 프로젝션광학계 및 리소그래피 장치 失效
标题翻译：一种用于极紫外光刻的反射装置及其制造方法，以及用于使用其的极紫外光刻的掩模，投影光学系统和光刻设备
公开(公告)号：KR100699858B1
公开(公告)日：2007-03-27
申请号：KR1020050071080
申请日：2005-08-03
申请人： 삼성전자주식회사
发明人： 김훈 , 김석필 , 송이헌 , 박영수 , 장승혁
IPC分类号： H01L21/027
CPC分类号： G03F1/24 , B82Y10/00 , B82Y40/00 , G03F7/70316 , G03F7/70958 , G21K1/062
摘要： 극자외선 리소그래피용 반사 디바이스 및 반사 디바이스 제조방법이 개시되어 있다.
개시된 반사 디바이스는, 기판과, 기판 상에 형성되고 극자외(EUV:Extreme Ultra Violet)선을 반사시킬 수 있는 재료로 이루어진 다중 반사층을 포함하며, 다중 반사층은, 제1물질층과, 제1물질층을 표면 처리한 표면처리막과, 표면 처리막 상에 형성된 제2물질층을 포함하는 층 그룹이 다수개 적층되어 형성된 다.
개시된 반사 디바이스 제조 방법은, 기판을 준비하는 단계와; 상기 기판 상에 극자외(EUV:Extreme Ultra Violet)선을 반사시킬 수 있는 재료로 다중 반사층;을 형성하는 단계를 포함하며, 상기 다중 반사층을 형성하는 단계는, 제1물질층을 형성하는 단계와; 상기 제1물질층을 표면 처리하는 단계와; 표면 처리된 상기 제1물질층 상에 제2물질층을 형성하는 단계;를 포함하며, 다시, 상기 제2물질층 상에 제1물질층 형성, 제1물질층 표면 처리, 제2물질층 형성과정을 복수회 반복하여 상기 다중 반사층을 형성한다.
摘要翻译：公开了用于极紫外光刻的反射装置和用于制造反射装置的方法。

86. 发明公开

KR1020060009950A 노광 장치 및 디바이스 제조 방법 无效
标题翻译：曝光装置和装置的制造方法
公开(公告)号：KR1020060009950A
公开(公告)日：2006-02-01
申请号：KR1020057022146
申请日：2004-05-24
申请人： 가부시키가이샤 니콘
发明人： 고바야시나오유키 , 다니모토아키카즈 , 미즈노야스시 , 시라이시겐이치 , 나카노가츠시 , 오와소이치
IPC分类号： H01L21/027 , G06F7/20
CPC分类号： G03F7/7085 , G03B27/52 , G03F7/00 , G03F7/2041 , G03F7/70316 , G03F7/70341 , G03F7/70775 , G03F7/70916 , G03F7/70925 , G03F7/70958 , G03F9/7015 , G03F9/7088 , G03F9/7096
摘要： There is provided an exposure device capable of forming a desirable device pattern by removing unnecessary liquid when performing exposure by projecting a pattern onto the substrate via a projection optical system and liquid. The exposure device projects a pattern image onto the substrate (P) via the projection optical system and the liquid so as to expose the substrate (P). The exposure device includes a liquid removal mechanism (40) for removing residual liquid from a part (7) arranged in the vicinity of the image surface of the projection optical system.
摘要翻译：提供了一种曝光装置，其能够通过经由投影光学系统和液体将图案投影到基板上时通过去除不需要的液体来形成期望的装置图案。曝光装置经由投影光学系统和液体将图案图像投影到基板（P）上，以露出基板（P）。曝光装置包括用于从布置在投影光学系统的图像表面附近的部分（7）去除残留液体的液体移除机构（40）。

87. 发明公开

KR1020050085026A 광학 소자 및 그 광학 소자를 사용한 투영 노광 장치 无效
标题翻译：使用这种光学装置的光学装置和投影曝光装置
公开(公告)号：KR1020050085026A
公开(公告)日：2005-08-29
申请号：KR1020057008871
申请日：2003-12-10
申请人： 가부시키가이샤 니콘
发明人： 시라이다케시
IPC分类号： H01L21/027
CPC分类号： G03F7/70341 , G03F7/70316 , G03F7/70875 , G03F7/70958 , G03F7/70983
摘要： An immersion exposure apparatus comprises a projection optical system (PL) for projecting an image of a pattern onto a substrate (W) and a unit (5) for supplying a liquid (7) between an optical device (4) at the end of the projection optical system (PL) and the substrate (W). An erosion-resistant film composed of an oxide is formed over the surface of the optical device (4) so as to prevent erosion by the liquid (7). Consequently, a desired performance of the projection optical system can be secured for a long time even where a block exposure in a step-and-repeat system or a scanning exposure in a step-and-scan system is performed in an immersion state.
摘要翻译：浸没曝光装置包括用于将图案的图像投影到基板（W）上的投影光学系统（PL）和用于在液晶体（5）的端部处的光学装置（4）之间供应液体的单元（5）投影光学系统（PL）和衬底（W）。在光学器件（4）的表面上形成由氧化物构成的耐腐蚀膜，以防止液体（7）的侵蚀。因此，即使在步进扫描系统中的块曝光或步进扫描系统中的扫描曝光在浸没状态下进行，也可以长时间确保投影光学系统的期望性能。

88. 发明公开

KR1020000066542A 복굴절 물질을 사용한 노광장비용 광학계장치 失效
标题翻译：使用双重材料的曝光设备的光学系统
公开(公告)号：KR1020000066542A
公开(公告)日：2000-11-15
申请号：KR1019990013748
申请日：1999-04-19
申请人： 한국전자통신연구원
发明人： 이각현 , 김도훈 , 최상수 , 정해빈 , 조경익
IPC分类号： G03F7/20
CPC分类号： G03F7/70191 , G03F7/70233 , G03F7/70241 , G03F7/70308 , G03F7/70316 , G03F9/7065
摘要： PURPOSE: An optical system for an exposure equipment using a birefringent material is provided to embody a fine line width, by using a light source having a short wavelength and a broad bandwidth, and by inserting optical parts composed of the double refraction material to extend a depth of a focus. CONSTITUTION: An optical system for an exposure equipment comprises a first group of lenses(10), a second group of lenses(20), a polarized beam splitter(41), a first wave plate, a spherical mirror, a second wave plate and a third group of lenses(30). The first group of lenses are positioned in a rear part of a light source and a material surface. The second group of lenses change an optical axis by almost 90 degrees, positioned in a rear part of a reflector. The polarized beam splitter is composed of two prisms, positioned in a rear part of the second group of lenses. The first wave plate is positioned in an upper part of the polarized beam splitter. The spherical mirror is positioned in an upper part of the wave plate. The second wave plate is positioned in a lower part of the polarized beam splitter. The third group of lenses corresponds to an upper surface to which light is irradiated, positioned in a lower part of the parallel plate.
摘要翻译：目的：提供一种使用双折射材料的曝光设备的光学系统，通过使用具有短波长和宽带宽的光源，并且通过插入由双折射材料组成的光学部件来实现细线宽度的扩展重点深度。构成：用于曝光设备的光学系统包括第一组透镜（10），第二组透镜（20），偏振分束器（41），第一波片，球面镜，第二波片和第三组透镜（30）。第一组透镜位于光源的后部和材料表面。第二组透镜将光轴改变近90度，位于反射器的后部。偏振分束器由两个棱镜组成，位于第二组透镜的后部。第一波片位于偏振分束器的上部。球面镜位于波片的上部。第二波片位于偏振分束器的下部。第三组透镜对应于照射光的上表面，位于平行板的下部。

89. 发明授权

KR1019950012546B1 경 X-선 비임 또는 감마선 비임을 집속시키기 위한 장치 및 방법 无效
标题翻译：用于聚焦硬X射线的装置和方法
公开(公告)号：KR1019950012546B1
公开(公告)日：1995-10-18
申请号：KR1019930700900
申请日：1992-06-15
申请人： 레이티언 컴파니
发明人： 발리,빅터 , 로렌스,앨버트에프. , 창,데이비드비.
IPC分类号： G03F7/20
CPC分类号： G21K1/06 , G03F7/70158 , G03F7/70316 , G21K2201/062
摘要： 내용 없음.

90. 发明授权

KR101923794B1 다층막 반사 미러 및 그 제조 방법, 및 노광 장치 有权
公开(公告)号：KR101923794B1
公开(公告)日：2018-11-29
申请号：KR1020167026172
申请日：2015-02-24
申请人： 가부시키가이샤 니콘
发明人： 무라카미가츠히코
IPC分类号： G02B5/08
CPC分类号： G02B5/0891 , G02B5/085 , G02B5/0875 , G03F7/702 , G03F7/70316 , G21K1/062 , G21K1/067
摘要： 입사하는광을반사하는다층막반사미러로서, 기판과, 기판의표면에 Mo층및 Si층을교대로적층하여형성된제 1 다층막과, 제 1 다층막상에형성되고, 제 1 다층막에대해박리가능한박리층과, 박리층상에 Mo층및 Si층을교대로적층하여형성된제 2 다층막을구비하며, 제 2 다층막은, 박리층을산에의한용해에의해박리하는것에의해박리층과함께제거가능하다. 다층막반사미러의반사율이저하한경우에, 간단한공정으로그 반사율을높게할 수있다.

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