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61. 发明公开

KR1020150040610A 모터의 회전자 및 그 제조방법 审中-实审
标题翻译：电机转子及其制造方法
公开(公告)号：KR1020150040610A
公开(公告)日：2015-04-15
申请号：KR1020130119348
申请日：2013-10-07
申请人： 삼성전자주식회사
发明人： 강동우 , 고병수 , 김강립 , 김영관 , 김홍석
IPC分类号： H02K1/28 , H02K1/27 , H02K15/03 , H02K15/02
CPC分类号： H02K1/28 , H02K1/2773 , H02K15/03
摘要： 자속누설을최소화할수 있도록하는모터의회전자및 그제조방법을개시한다. 모터의회전자는비자성체로마련되는원통형상의지지부재와, 지지부재에결합되며회전중심을기준으로방사형으로배치되는일체형철심과, 철심사이에배치되는다수의영구자석을포함하는것을특징으로한다.
摘要翻译：公开了能够最小化漏磁的电动机的转子及其制造方法。电动机的转子包括：由非磁性材料制成的圆柱形支撑构件，与支撑构件组合并且基于旋转中心以径向形式布置的嵌入铁芯和布置在铁芯之间的永磁体。

62. 发明公开

KR1020140040306A 모터 审中-实审
标题翻译：发动机
公开(公告)号：KR1020140040306A
公开(公告)日：2014-04-03
申请号：KR1020120105717
申请日：2012-09-24
申请人： 삼성전자주식회사
发明人： 윤태호 , 고병수 , 김홍석 , 김홍정 , 전용현
IPC分类号： H02K1/06 , H02K1/14 , H02K1/27
CPC分类号： H02K1/274 , H02K1/148 , H02K2213/03
摘要： The present invention relates to a motor which includes a rotor core and a plurality of magnets which are installed on the rotor core. The rotor core includes a plurality of first groove parts which are concavely formed on the outside between two adjacent magnets, multiple pairs of second groove parts which are separately formed to be symmetrical around the first groove parts, and a protrusion part which is formed on the leading edge of a teeth part facing the rotor core and protrudes to the rotor core. Thereby, magnetic flux density in an air gap between the teeth part of a stator core and the outer circumference of the rotor core becomes sinusoidal.
摘要翻译：电动机技术领域本发明涉及一种电动机，其包括转子铁芯和安装在转子铁芯上的多个磁体。转子芯包括多个第一凹槽部分，其在两个相邻磁体之间的外侧凹入地形成，多对第二凹槽部分分别形成为围绕第一凹槽部分对称;以及突出部分，面向转子芯的齿部分的前缘突出到转子芯上。由此，定子铁芯的齿部与转子铁芯的外周之间的空气间隙的磁通密度变为正弦。

63. 发明公开

KR1020140032238A 반도체 장치 및 그 제조 방법 无效
标题翻译：半导体器件及其制造方法
公开(公告)号：KR1020140032238A
公开(公告)日：2014-03-14
申请号：KR1020120098897
申请日：2012-09-06
申请人： 삼성전자주식회사
发明人： 김성길 , 허성회 , 김정환 , 김홍석 , 연국현 , 최재호
IPC分类号： H01L27/115 , H01L21/8247 , H01L21/31
CPC分类号： H01L29/788 , H01L21/764 , H01L27/11521 , H01L27/11556 , H01L27/11568 , H01L27/11582 , H01L29/42332 , H01L29/4234 , H01L29/66825 , H01L29/66833 , H01L21/76205
摘要： Provided are a semiconductor device and a method for fabricating the same. The semiconductor device comprises a semiconductor substrate with a trench to define active areas; a gate electrode crossing the active areas; a charge storage pattern between the gate electrode and the active areas; a porous insulation film to extend on the trench between the gate electrode and the charge storage pattern; and an air gap between the porous insulation film and the bottom surface of the trench.
摘要翻译：提供一种半导体器件及其制造方法。半导体器件包括具有沟槽以限定有源区的半导体衬底; 栅电极穿过有源区; 栅电极和有源区之间的电荷存储图案; 多孔绝缘膜，用于在栅电极和电荷存储图案之间的沟槽上延伸; 以及多孔绝缘膜和沟槽的底表面之间的气隙。

64. 发明授权

KR101335001B1 프로세서 및 인스트럭션 스케줄링 방법 失效
标题翻译：处理器和指令调度方法
公开(公告)号：KR101335001B1
公开(公告)日：2013-12-02
申请号：KR1020070113435
申请日：2007-11-07
申请人： 삼성전자주식회사
发明人： 오태욱 , 김홍석 , 말키스캇 , 박현철
IPC分类号： G06F9/50
CPC分类号： G06F9/30065 , G06F9/3836
摘要： 프로세서 및 인스트럭션 스케줄링 방법이 제공된다. 본 발명의 인스트럭션 스케줄링 방법은 복수의 인스트럭션들 중 가장 높은 우선 순위를 가지는 제1 인스트럭션을 선택하는 단계; 상기 선택된 제1 인스트럭션 및 제1 시간 구간을 상기 복수의 연산 유닛들 중 하나에 할당하는 단계; 상기 제1 인스트럭션에 직접적으로 의존하는 하나 이상의 제2 인스트럭션 각각 및 하나 이상의 제2 시간 구간 각각을 상기 복수의 연산 유닛들 중 하나에 할당하는 단계; 및 상기 하나 이상의 제2 인스트럭션 각각 및 상기 하나 이상의 제2 시간 구간 각각이 상기 복수의 연산 유닛들 중 하나에 유효하게 할당되었는지 판단하는 단계를 포함하는 것을 특징으로 하며, 이를 통해 인스트럭션 스케줄링 시간을 줄일 수 있다.
CGA, 재구성 프로세서, 인스트럭션 스케줄링

65. 发明公开

KR1020130025204A 반도체 장치 및 이의 제조 방법 无效
标题翻译：装置隔离结构，具有该装置的半导体装置及其形成方法
公开(公告)号：KR1020130025204A
公开(公告)日：2013-03-11
申请号：KR1020110088583
申请日：2011-09-01
申请人： 삼성전자주식회사
发明人： 김대웅 , 양준규 , 김홍석 , 한태종
IPC分类号： H01L27/115 , H01L21/8247
CPC分类号： H01L27/11521 , H01L21/764 , H01L21/28141 , H01L21/3213
摘要： PURPOSE: A semiconductor device and a manufacturing method thereof are provided to minimize interference between adjacent cells by reducing a coupling effect between the adjacent cells. CONSTITUTION: A device isolation structure(20) is arranged on the substrate and defines an active region and includes a bottom insulation pattern(11a), a top insulation pattern(21a), and a gap region(17). The gap region is located between the bottom insulation pattern and the top insulation pattern. The bottom insulation pattern includes a silicon oxide layer. The top insulation pattern includes a buried insulation recess pattern and a spacer recess pattern(15c) arranged on both sidewalls of the buried insulation recess pattern.
摘要翻译：目的：提供一种半导体器件及其制造方法，以通过减少相邻单元之间的耦合效应来最小化相邻单元之间的干扰。构成：器件隔离结构（20）布置在衬底上并且限定有源区，并且包括底部绝缘图案（11a），顶部绝缘图案（21a）和间隙区域（17）。间隙区域位于底部绝缘图案和顶部绝缘图案之间。底部绝缘图案包括氧化硅层。顶部绝缘图案包括埋置绝缘凹槽图案和布置在掩埋绝缘凹槽图案的两个侧壁上的间隔凹槽图案（15c）。

66. 发明公开

KR1020120128882A 이온빔을 이용한 알루미늄 초친수 처리방법 및 장치 无效
标题翻译：铝超亲水表面处理方法和使用离子束的设备
公开(公告)号：KR1020120128882A
公开(公告)日：2012-11-28
申请号：KR1020110046807
申请日：2011-05-18
申请人： 한국원자력연구원 , 삼성전자주식회사
发明人： 이재상 , 이찬영 , 김주호 , 오승진 , 갈승훈 , 김홍석
IPC分类号： C23C14/46
摘要： PURPOSE: An aluminum superhydrophilic treatment method and apparatus using ion beam are provided to prevent the loss of hydrophilicity of aluminum and to manufacture a cooling fin of a heat exchanger capable of maintaining superior cooling effect for a long time. CONSTITUTION: An aluminum superhydrophilic treatment method comprises the steps of: ionizing injected gas and generating ion beam(ST110,ST120,ST130), accelerating the ion beam(ST140), and injecting the accelerated ion beam to the surface of a material for surface treatment(ST150). [Reference numerals] (ST110) N_2, O_2, Ar, and Na gas injection; (ST120) Plasma ionization; (ST130) Ion beam generation; (ST140) Ion beam acceleration with 5KeV-100KeV energy; (ST150) Ion beam injection in an ion amount range of 1E17 ions/cm^2-2E18 ions/cm^2
摘要翻译：目的：提供一种使用离子束的铝超亲水处理方法和装置，以防止铝的亲水性的损失，并制造长时间保持优异的冷却效果的热交换器的冷却翅片。构成：铝超亲水处理方法包括以下步骤：离子注入气体并产生离子束（ST110，ST120，ST130），加速离子束（ST140），并将加速离子束注入到用于表面处理的材料的表面（ST150）。（标号）（ST110）N_2，O_2，Ar，Na气体注入; （ST120）等离子体电离; （ST130）离子束产生; （ST140）具有5KeV-100KeV能量的离子束加速度; （ST150）离子束注入离子量范围为1E17离子/ cm ^ 2-2E18离子/ cm ^ 2

67. 发明公开

KR1020090088651A 비휘발성 메모리 소자 및 그 제조 방법 无效
标题翻译：非易失性存储器件及其制造方法
公开(公告)号：KR1020090088651A
公开(公告)日：2009-08-20
申请号：KR1020080014063
申请日：2008-02-15
申请人： 삼성전자주식회사
发明人： 백승재 , 최한메 , 임주완 , 김홍석 , 이주열 , 박광민 , 최시영 , 황기현
IPC分类号： H01L27/115 , H01L21/8247
CPC分类号： H01L29/792 , H01L21/0223 , H01L21/02252 , H01L21/0226 , H01L29/4234 , H01L29/66833
摘要： A nonvolatile memory device and a manufacturing method thereof are provided to improve reliability of a device by preventing concentration of an electron in interface between a charge trapping layer and a blocking layer during a programming or removing operation. A tunnel layer(110) is formed on a semiconductor substrate(100). A charge trapping layer(120) is formed on the tunnel layer. A first blocking layer(132) is formed on the charge trapping layer. A second blocking layer(134) is formed on the first blocking layer, and is made of material having a dielectric constant higher than the first blocking layer. A gate electrode is formed on the second blocking layer. A band gap of the first blocking layer is arranged in the gate electrode, and includes a source/drain region.
摘要翻译：提供非易失性存储器件及其制造方法，以通过在编程或去除操作期间防止电荷在电荷捕获层和阻挡层之间的界面中的浓缩来提高器件的可靠性。隧道层（110）形成在半导体衬底（100）上。在隧道层上形成电荷捕获层（120）。在电荷俘获层上形成第一阻挡层（132）。第一阻挡层（134）形成在第一阻挡层上，并且由具有高于第一阻挡层的介电常数的材料制成。在第二阻挡层上形成栅电极。第一阻挡层的带隙设置在栅电极中，并且包括源/漏区。

68. 发明公开

KR1020090025597A 플래시 메모리 소자 및 그 제조 방법 无效
标题翻译：闪存存储器件及其制造方法
公开(公告)号：KR1020090025597A
公开(公告)日：2009-03-11
申请号：KR1020070090567
申请日：2007-09-06
申请人： 삼성전자주식회사
发明人： 박광민 , 백승재 , 황기현 , 최시영 , 임주완 , 김홍석
IPC分类号： H01L21/8247 , H01L27/115
CPC分类号： H01L27/11568 , H01L21/28282 , H01L29/4234 , H01L29/66833 , H01L29/792
摘要： A flash memory device and a manufacturing method thereof are provided to reduce the loss of the electron in a horizontal direction by changing the property of a charge trapping layer by implanting the ion to the outside of the cell of a charge trap layer. A semiconductor substrate includes an active region(100) restricted by an element isolation layer(110). A tunnel insulating layer(120) is formed on a semiconductor substrate. A charge trap layer is formed on the semiconductor substrate. A blocking insulation layer(140) is formed on the charge trap layer. A control electrode(150) crosses the charge trap layer. An upper part(130b) of the element isolation layer of the charge trap layer has the hopping mobility lower than the upper part(130a) of an active region of the charge trap layer.
摘要翻译：提供了一种闪速存储器件及其制造方法，通过将电离离子注入到电荷陷阱层的电池的外部，通过改变电荷俘获层的性质来减小电子在水平方向上的损耗。半导体衬底包括由元件隔离层（110）限制的有源区（100）。隧道绝缘层（120）形成在半导体衬底上。在半导体衬底上形成电荷陷阱层。在电荷陷阱层上形成阻挡绝缘层（140）。控制电极（150）穿过电荷陷阱层。电荷陷阱层的元件隔离层的上部（130b）的跳跃迁移率低于电荷陷阱层的有源区的上部（130a）。

69. 发明公开

KR1020080078131A 3-Ｄ 주소 매핑을 이용한 메모리 접근 방법 有权
标题翻译：使用三维地址映射的存储器访问方法
公开(公告)号：KR1020080078131A
公开(公告)日：2008-08-27
申请号：KR1020070017775
申请日：2007-02-22
申请人： 삼성전자주식회사
发明人： 김종면 , 류수정 , 유동훈 , 김홍석 , 김희석 , 김정욱 , 민경준
IPC分类号： G06F12/02 , G06F12/08 , G06F12/00
CPC分类号： G06F8/443 , G06F8/447 , G06F12/0207
摘要： A method for accessing a memory with 3D(Dimensional) address mapping is provided to enable a triple loop included in a program to access a LAM(Linear Addressable Memory) efficiently by using the 3D address mapping and map a linear address to a 3D address suitable for address calculation of the memory accessed by the tripe loop. 'a', 'b', and 'c' are obtained from a code accessing a memory by a triple loop included in a program(810). 'a', 'b', and 'c' are the number available to a loop parameter of the innermost loop, a middle loop, and the outmost loop of the triple loop. A start address of the memory accessed by the tripe loop is obtained(820). 'aXbXc' addresses of the memory accessed by the triple loop are obtained by using the start address and a predetermined formula(830). A linear address of the memory is mapped to an (x,y,z) 3D address.
摘要翻译：提供了一种使用3D（维度）地址映射来访问存储器的方法，以使程序中包含的三重循环能够通过使用3D地址映射有效地访问LAM（线性可寻址存储器），并将线性地址映射到适合的3D地址用于由tripe循环访问的存储器的地址计算。通过包含在程序（810）中的三重循环的访问存储器的代码获得'a'，'b'和'c'。 'a'，'b'和'c'是可循环参数的最多循环，中间循环和最后一个循环的循环次数。获得由tripe循环访问的存储器的起始地址（820）。通过使用起始地址和预定公式（830）获得由三重环路访问的存储器的'aXbXc'地址。存储器的线性地址映射到（x，y，z）3D地址。

70. 发明公开

KR1020080076102A 시각장애인을 위한 화상형성장치 및 화상형성장치의화상형성방법 无效
标题翻译：图像形成装置的图像形成装置和图像形成装置的图像形成方法
公开(公告)号：KR1020080076102A
公开(公告)日：2008-08-20
申请号：KR1020070015591
申请日：2007-02-14
申请人： 삼성전자주식회사
发明人： 김홍석 , 박종우
IPC分类号： G03G15/00 , G06F3/12
CPC分类号： H04N1/00405 , H04N1/00488 , H04N2201/0094
摘要： An image forming apparatus for visually impaired people and an image forming method of the apparatus are provided to convert sound switched information contained in the document into sound data and to output the sound data for allowing the people to check the contents of the document and to shorten the time for searching the image data. A fax transmission process of an image forming apparatus comprises the steps of; receiving a fax number(S110), scanning documents and generating image data(S111), judging whether a sound attached signal for visually impaired people is inputted(S112), converting sound switched information contained in the document into sound data and outputting the sound data(S113), inputting whether the image data is transferred(S116), transferring the image data to a fax receiving device(S117), and displaying a transferred result of the image data(S118).
摘要翻译：用于视觉障碍者的图像形成装置和该装置的图像形成方法被提供以将包含在文档中的声音切换信息转换成声音数据并输出声音数据，以允许人们检查文档的内容并缩短搜索图像数据的时间。图像形成装置的传真发送处理包括以下步骤：接收传真号码（S110），扫描文件并生成图像数据（S111），判断是否输入了视觉障碍者的声音附加信号（S112），将包含在文档中的声音切换信息转换为声音数据并输出声音数据（S113），输入图像数据是否被传送（S116），将图像数据传送到传真接收装置（S117），并显示图像数据的传送结果（S118）。

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