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11. 发明公开

KR1020120023840A 기판처리장치 失效
标题翻译：基板处理装置
公开(公告)号：KR1020120023840A
公开(公告)日：2012-03-13
申请号：KR1020120005203
申请日：2012-01-17
申请人： 가부시키가이샤 스크린 세미컨덕터 솔루션즈
发明人： 오구라히로유키 , 미츠하시츠요시 , 후쿠토미요시테루 , 모리니시켄야 , 카와마츠야스오 , 나가시마히로미치
IPC分类号： H01L21/027 , H01L21/677 , G03F7/16 , G03F7/30
CPC分类号： H01L21/67225 , B05C9/12 , B05C9/14 , B05C13/00 , B05C13/02 , H01L21/6715 , H01L21/67173 , H01L21/67178 , H01L21/67196 , H01L21/67276 , H01L21/67742 , G03F7/162 , G03F7/3042 , G03F7/305 , G03F7/3071 , H01L21/0273
摘要： PURPOSE: A substrate processing apparatus is provided to change a process performed on a substrate for each substrate processing row, thereby suitably changing the process performed on the substrate for each substrate. CONSTITUTION: A supply part(34) comprises a plurality of nozzles(35), a grip part(36), and a nozzle transfer device(37). The nozzle transfer device transfers the nozzle between a standby position and a processing position of the upper side of a substrate(W). The nozzle transfer device comprises a first guide rail(37a) and a second guide rail(37b). One end of a processing liquid pipe(38) is connected to the nozzle. A heat treatment unit comprises a plate for mounting the substrate.
摘要翻译：目的：提供一种基板处理装置，用于改变对每个基板处理行在基板上执行的处理，从而适当地改变对于每个基板在基板上执行的处理。构成：供给部分（34）包括多个喷嘴（35），夹持部分（36）和喷嘴传送装置（37）。喷嘴传送装置在待机位置和衬底（W）的上侧的处理位置之间传送喷嘴。喷嘴传送装置包括第一导轨（37a）和第二导轨（37b）。处理液管38的一端与喷嘴连接。热处理单元包括用于安装基板的板。

12. 发明授权

KR101072282B1 기판 처리 장치, 기판 처리 방법, 기판 처리 프로그램 및 그 프로그램을 기록한 컴퓨터 판독 가능한 기록 매체 有权
标题翻译：基板处理设备，基板处理方法，基板处理程序以及使用此程序记录的计算机可读记录介质
公开(公告)号：KR101072282B1
公开(公告)日：2011-10-11
申请号：KR1020087003969
申请日：2006-09-13
申请人： 도쿄엘렉트론가부시키가이샤
发明人： 오가타구니에 , 도미타히로시 , 다나카미치오 , 우에무라료이치
IPC分类号： G03F7/26 , H01L21/027 , H01L21/02 , H01L21/66
CPC分类号： H01L21/67225 , G03F7/168 , G03F7/3071 , G03F7/40 , H01L22/12 , H01L22/20 , H01L2924/0002 , H01L2924/00
摘要： 패턴형성장치(1)는현상처리후에기판(W)에형성된레지스트패턴의상태를측정검사하여제1 검사결과를출력하고, 에칭처리후에기판(W)에형성된패턴의상태를측정검사하여제2 검사결과를출력하는검사장치(400)와, 상기제1 검사결과와상기제2 검사결과로부터구한상관식을기록한기억수단(502)과, 상기상관식에기초하여상기에칭처리후의패턴상태의목표값으로부터상기현상처리후의패턴상태의목표값을구하고, 상기현상처리후의패턴상태의목표값과상기제1 검사결과의차분에기초하여상기제1 가열처리및/또는상기제2 가열처리에있어서의조건설정을행하는제어부(500)를구비한다.

13. 发明公开

KR1020100138541A 포토레지스트 패턴 형성방법 无效
标题翻译：光电子图案的制造方法
公开(公告)号：KR1020100138541A
公开(公告)日：2010-12-31
申请号：KR1020090057124
申请日：2009-06-25
申请人： 에스케이하이닉스 주식회사
发明人： 최철찬
IPC分类号： H01L21/027
CPC分类号： G03F7/3057 , G03F7/092 , G03F7/094 , G03F7/11 , G03F7/3071 , G03F7/70925 , H01L21/67028
摘要： PURPOSE: A photoresist patterns formation method is provided to reduce the surface tension by the cleaning solution by surface processing the surface of the photoresist pattern using organic solution before implementing the cleaning process. CONSTITUTION: A photoresist film is formed on the top of the semiconductor substrate. A photoresist film is patterned by patterning the photoresist layer with the exposure and development processes(S11-S13). The surface of the photoresist pattern uses the organic solvent for surface-process(S15).
摘要翻译：目的：提供光致抗蚀剂图案形成方法，以在实施清洁过程之前通过使用有机溶液表面处理光致抗蚀剂图案的表面来减少清洁溶液的表面张力。构成：在半导体基板的顶部形成有光致抗蚀剂膜。通过曝光和显影处理图案化光致抗蚀剂层来对光致抗蚀剂膜进行图案化（S11-S13）。光致抗蚀剂图案的表面使用有机溶剂进行表面处理（S15）。

14. 发明公开

KR1020100019318A 도포장치, 도포 방법, 도포 현상 장치 및 기억 매체 有权
标题翻译：涂装设备，涂装方法，涂装与开发设备和计算机可读记录介质
公开(公告)号：KR1020100019318A
公开(公告)日：2010-02-18
申请号：KR1020090047548
申请日：2009-05-29
申请人： 도쿄엘렉트론가부시키가이샤
发明人： 구보아키히로
IPC分类号： H01L21/027
CPC分类号： G03F7/162 , G03F7/3071 , G03F7/70608 , G03F7/70875
摘要： PURPOSE: A coating apparatus, a coating method, a coating developing apparatus and a recording media are provided to keep the uniformity of film thickness profile of a substrate by controlling a film thickness profile based on the number of rotation of the substrate when a coating solution is applied on the substrate. CONSTITUTION: A spin chuck(21) is composed to maintain the level of a wafer(W) by vacuum suction. The spin chuck rotates by a rotation driving unit(22). A guide ring(23) is installed in the lower part of the spin chuck. The section of the guide ring is mountain shape. A cup(24) is installed to surround the spin chuck and the guide ring and suppresses the scattering of a coating solution. An opening with bigger size than the size of the wafer is formed on the upper side of the cup in order to lift the spin chuck. An exhaust unit(26) is formed in the lower part of the cup and is connected to an exhaust pipe(26A).
摘要翻译：目的：提供涂布装置，涂布方法，涂布显影装置和记录介质，以通过基于涂布溶液的基板的旋转数来控制膜厚分布来保持基板的膜厚分布的均匀性施加在基板上。构成：旋转卡盘（21）被组成以通过真空吸力来保持晶片（W）的水平。旋转卡盘通过旋转驱动单元（22）旋转。引导环（23）安装在旋转卡盘的下部。导环的部分是山形。安装杯（24）以围绕旋转卡盘和引导环并抑制涂布溶液的散射。在杯的上侧形成具有比晶片尺寸大的尺寸的开口，以便提升旋转卡盘。排气单元（26）形成在杯的下部并连接到排气管（26A）。

15. 发明公开

KR1020080054052A 바닥반사방지막을 사용하지 않는 메탈 포토리소그래피공정의 패턴필링 방지방법 无效
标题翻译：不含底漆防反射涂层的图案剥离保护方法金属照相平版印刷工艺
公开(公告)号：KR1020080054052A
公开(公告)日：2008-06-17
申请号：KR1020060126122
申请日：2006-12-12
申请人： 동부일렉트로닉스 주식회사
发明人： 박유식
IPC分类号： H01L21/027
CPC分类号： G03F7/3071 , G03F7/3021
摘要： A pattern peeling prevention method of a metal photolithography process without using a bottom anti-reflective coating metal is provided to reduce pattern peeling by controlling scanning speed of an LD nozzle for spraying a developing solution on the surface of a photoresist. A pattern peeling prevention method of a metal photolithography process reduces the pattern peeling(30) by controlling the scan speed of an LD nozzle. Wherein, the scan speed is 55 mm/s to 65 mm/s, and the scan speed is applied even when the number times of scanning is 2. Generally, when performing a strip procedure for peeling a photoresist, a selected recipe condition is varied according to the process time, power, oxygen gas, and nitrogen gas. The result of the pattern peeling is changed according the recipe condition. This pattern peeling prevention method extracts experiment data and analyzes factors causing the pattern peeling, so as to minimize the pattern peeling.
摘要翻译：提供不使用底部抗反射涂层金属的金属光刻工艺的图案剥离防止方法，通过控制用于将显影溶液喷涂在光刻胶表面上的LD喷嘴的扫描速度来减少图案剥离。金属光刻工艺的图案剥离防止方法通过控制LD喷嘴的扫描速度来减少图案剥离（30）。其中，扫描速度为55mm / s至65mm / s，即使扫描次数为2时也施加扫描速度。通常，当执行剥离光致抗蚀剂的剥离步骤时，选择的配方条件变化根据工艺时间，功率，氧气和氮气。图案剥离的结果根据配方条件而改变。该图案剥离防止方法提取实验数据并分析导致图案剥离的因素，以使图案剥离最小化。

16. 发明公开

KR1020080034935A 포토레지스트를 현상하는 장치 및 그 장치를 동작시키는방법 有权
标题翻译：用于开发光电装置的装置及其操作方法
公开(公告)号：KR1020080034935A
公开(公告)日：2008-04-22
申请号：KR1020087003757
申请日：2006-08-07
申请人： 램 리써치 코포레이션
发明人： 보이드존엠 , 레데커프리츠씨 , 헴커데이비드제이
IPC分类号： G03F7/20 , H01L21/027
CPC分类号： G03F7/30 , B08B3/04 , G03F7/3092 , H01L21/67028 , H01L21/67034 , H01L21/67051 , Y10S134/902 , G03F7/3071 , G03F7/70908 , G03F7/70925
摘要： A first proximity head is configured to define a meniscus of a photoresist developer solution on a substrate. The meniscus is to be defined between a bottom of the first proximity head and the substrate. A second proximity head is configured to define a rinsing meniscus on the substrate and remove the rinsing meniscus from the substrate. The second proximity head is positioned to follow the first proximity head relative to a traversal direction of the first and second proximity heads over the substrate. Exposure of the substrate to the meniscus of photoresist developer solution causes previously irradiated photoresist material on the substrate to be developed to render a patterned photoresist layer. The first and second proximity heads enable precise control of a residence time of the photoresist developer solution on the substrate during the development process.
摘要翻译：第一接近头被配置为在衬底上限定光致抗蚀剂显影剂溶液的弯液面。弯液面应限定在第一邻近头部的底部和基底之间。第二邻近头被配置为在衬底上限定冲洗弯液面并从衬底移除冲洗弯月面。第二接近头被定位成相对于基板上的第一和第二接近头的遍历方向跟随第一邻近头。将衬底暴露于光致抗蚀剂显影剂溶液的弯液面使得先前照射在衬底上的光致抗蚀剂材料被显影以形成图案化的光致抗蚀剂层。第一和第二接近头允许在显影过程中精确地控制光致抗蚀剂显影剂溶液在基底上的停留时间。

17. 发明公开

KR1020170103614A 플렉시블 용액 조절을 이용한 리소그래피 패터닝 审中-实审
标题翻译：光刻图案与灵活的解决方案控制
公开(公告)号：KR1020170103614A
公开(公告)日：2017-09-13
申请号：KR1020160139471
申请日：2016-10-25
申请人： 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드
发明人： 왕충-쳉
IPC分类号： G03F7/32 , G03F7/20
CPC分类号： G03F7/32 , G03F7/20 , G03F7/3071 , G03F7/322 , G03F7/325 , G03F7/40
摘要： 리소그래피패터닝방법은, 제1 층을기판위에형성하는단계를포함하고, 제1 층은복사선감응성(radiation-sensitive)이다. 방법은, 제1 층을복사선에노광시키는단계를더 포함한다. 방법은, 기판위에패턴이얻어지도록, 노광된제1 층에현상제를도포하는단계를더 포함하고, 현상제는, 현상제에서의농도가현상제를도포하는단계동안시간의함수인현상용화학물질을포함한다.
摘要翻译：光刻图案化方法包括在衬底上形成第一层，其中第一层对辐射敏感。该方法还包括将第一层暴露于辐射。方法中，在基板上得到的图案，还包括涂覆步骤和显影jereul到暴露的第一层，和显影剂，同时将显影剂eseoui浓度现象jereul包括函数inhyeon的时间商购化学品。

18. 发明公开

KR1020130125751A 경화막 형성 방법 无效
标题翻译：形成固化膜的方法
公开(公告)号：KR1020130125751A
公开(公告)日：2013-11-19
申请号：KR1020137003072
申请日：2011-07-05
申请人： 스미또모 베이크라이트 가부시키가이샤
发明人： 호리이마코토 , 다나카유마
IPC分类号： H01L21/027 , G03F7/30
CPC分类号： G03F7/20 , G03F7/0233 , G03F7/40 , G03F7/405 , H01L21/0274 , G03F7/3071
摘要： The present invention provides a method for forming a cured film of a positive type photosensitive polymer composition over a support, including: a coating step for coating the aforementioned support with the aforementioned positive type photosensitive polymer composition; an exposure step for selectively irradiating the aforementioned positive type photosensitive polymer composition with a chemical ray to achieve an exposure; a developing step for developing an exposed section of the aforementioned positive type photosensitive polymer composition with an alkaline developer solution; a rinsing process for rinsing the aforementioned developer solution off with a rinsing solution and removing the exposed section of the aforementioned positive type photosensitive polymer composition; and a curing step for heating the aforementioned positive type photosensitive polymer composition to form a cured film, wherein the aforementioned rinsing step includes a first rinsing step and a second rinsing step, the aforementioned first rinsing step including supplying the aforementioned rinsing solution while the aforementioned support is rotated at a circumferential velocity of equal to or lower than 0.53 m/s, and the aforementioned second rinsing step including supplying the rinsing solution while the aforementioned support is rotated at a circumferential velocity that is higher than the circumferential velocity of the aforementioned first rinsing step.

19. 发明公开

KR1020100089754A 현상 처리 방법 및 현상 처리 장치 有权
标题翻译：发展处理方法和开发处理装置
公开(公告)号：KR1020100089754A
公开(公告)日：2010-08-12
申请号：KR1020100006488
申请日：2010-01-25
申请人： 도쿄엘렉트론가부시키가이샤
发明人： 야마모토타로 , 요시하라고우스케 , 요시다유이치
IPC分类号： H01L21/027
CPC分类号： G03F7/3071 , B05B1/30 , B05B1/3046 , G03F7/16 , G03F7/70425
摘要： PURPOSE: A development processing method and a development processing apparatus are provided to improve a development process by supplying gas having higher temperature than a substrate. CONSTITUTION: A substrate holding unit(40) keeps a substrate level(W). A rotation driving apparatus(42) rotates the substrate holding unit around a vertical axis. A developer supply nozzle(52) supplies developer on the surface of the substrate held by the substrate holding unit. A gas supply nozzle(53) supplies gas to the edge of a sediment area on which the developer is laminated. A temperature control unit(75) controls the temperature of gas supplied from a gas supply nozzle to be higher than the temperature of the substrate.
摘要翻译：目的：提供一种开发处理方法和显影处理装置，以通过提供比衬底温度高的气体来改进显影处理。构成：衬底保持单元（40）保持衬底水平（W）。旋转驱动装置（42）使基板保持单元绕垂直轴旋转。显影剂供应喷嘴（52）在由基板保持单元保持的基板的表面上供应显影剂。供气喷嘴（53）将气体供给到其上层叠有显影剂的沉积区域的边缘。温度控制单元（75）控制从气体供给喷嘴供给的气体的温度高于基板的温度。

20. 发明公开

KR1020100078027A 포토레지스트 공급 장치 无效
标题翻译：提供光电设备的设备
公开(公告)号：KR1020100078027A
公开(公告)日：2010-07-08
申请号：KR1020080136158
申请日：2008-12-30
申请人： 주식회사 디비하이텍
发明人： 조영훈
IPC分类号： H01L21/027
CPC分类号： G03F7/16 , G03F7/3071 , G03F7/70533 , G03F7/7085 , H01L21/6715 , H01L21/67276
摘要： PURPOSE: An apparatus for providing a photoresist is provided to minimize the remaining of a photoresist in replacing a storage tank by mounting a storage tank in reverse direction. CONSTITUTION: A photoresist supplying apparatus comprises a storage tank(10). An opening(13) is formed in the lower part of the storage tank. A cap(15) seals hermetically the opening of the storage tank. A hole(20) penetrates through the cap. A nitrogen connector(17) is connected to the lower edge of the hole. The nitrogen connector supplies the nitrogen gas to the storage tank interior. A tube penetrates through the cap and is inserted into the storage tank. The end of tube is opposite the top side of the cap. The check valve is installed in the hole.
摘要翻译：目的：提供一种用于提供光致抗蚀剂的设备，以通过以相反方向安装储罐来最小化替换储罐中的光致抗蚀剂的剩余部分。构成：光致抗蚀剂供给装置包括储罐（10）。在储罐的下部形成开口（13）。盖（15）密封地密封储罐的开口。孔（20）穿过盖子。氮连接器（17）连接到孔的下边缘。氮气连接器将氮气供应到储罐内部。管穿过盖子并插入储罐中。管的端部与盖的顶侧相对。止回阀安装在孔中。

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