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91. 发明公开

KR1020100093958A 자구벽 이동을 이용한 정보저장장치 및 그 동작방법 无效
标题翻译：使用磁畴壁移动的信息存储装置及其操作方法
公开(公告)号：KR1020100093958A
公开(公告)日：2010-08-26
申请号：KR1020090013130
申请日：2009-02-17
申请人： 삼성전자주식회사
发明人： 김호정 , 박철우 , 강상범 , 김종완 , 최현호 , 김영필 , 이성철
IPC分类号： G11B5/02 , G11B5/012 , G11C11/15 , H01L27/115
CPC分类号： G11C11/161 , G11C11/1673 , G11C11/1675 , G11C11/15 , G11B5/012 , G11B5/02 , H01L27/222
摘要： PURPOSE: An information storage device using magnetic domain wall movement and a method of operating the same are provided to achieve a structure beneficial for high integration and facilitate control of a record/playback operation. CONSTITUTION: An information storage device comprises a magnetic track(100), a first unit(200A), a plurality of switching elements(T1,T2,T3,T4), and a second unit(200B). The magnetic track has a plurality of magnetic domains and magnetic domain walls arranged between the magnetic domains. The first unit is installed on the magnetic track and performs one or both of record and playback of information. The switching elements are connected to one or both ends of the magnetic track and to the first unit and share signal lines. The second unit is separate from the first unit. One of the first and second units is a record unit while the other is a playback unit.
摘要翻译：目的：提供一种使用磁畴壁移动的信息存储装置及其操作方法，以实现有利于高集成度和有利于控制记录/重放操作的结构。构成：信息存储装置包括磁道（100），第一单元（200A），多个开关元件（T1，T2，T3，T4）和第二单元（200B）。磁道具有布置在磁畴之间的多个磁畴和磁畴壁。第一个单元安装在磁道上，并执行信息的记录和重放中的一个或两个。开关元件连接到磁道的一端或两端并连接到第一单元并共享信号线。第二单元与第一单元分开。第一和第二单元之一是记录单元，而另一个是回放单元。

92. 发明公开

KR1020100073870A 플로팅 바디 효과를 이용한 자기저항 메모리셀, 이를 포함하는 메모리 소자 및 그 동작 방법 有权
标题翻译：使用浮动体效应的磁性存储单元，包括其的存储器件及其操作方法
公开(公告)号：KR1020100073870A
公开(公告)日：2010-07-01
申请号：KR1020080132652
申请日：2008-12-23
申请人： 에스케이하이닉스 주식회사
发明人： 정성웅
IPC分类号： G11C11/15 , G11C11/21 , G11C11/34
CPC分类号： G11C13/003 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C11/1693 , G11C2213/79 , H01L27/1203 , H01L27/228 , H01L29/7841
摘要： PURPOSE: A magneto-resistive memory cell using floating body effect, a memory device, and an operating method thereof are provided to implement the high integration of the magneto-resistive memory device by minimizing the area of a selection transistor. CONSTITUTION: A magneto-resistive memory cell comprises a magnetic tunnel junction device and a selection transistor. The selection transistor includes a first conductive semiconductor layer(103), a gate electrode(20), and first and second diffusion regions(40) of a second conductive type. The gate electrode is made by forming a gate insulation layer(22) on the upper side of the semiconductor layer. The first diffusion region is separated from a second diffusion region on the semiconductor layer. A part of the semiconductor layer between the first and second diffusion regions is comprised of an electrically floated body region.
摘要翻译：目的：提供使用浮体效应的磁阻存储单元，存储器件及其操作方法，以通过最小化选择晶体管的面积来实现磁阻存储器件的高集成度。构成：磁阻存储器单元包括磁性隧道结器件和选择晶体管。选择晶体管包括第一导电半导体层（103），栅极电极（20）以及第二导电类型的第一和第二扩散区域（40）。栅电极通过在半导体层的上侧形成栅绝缘层（22）而制成。第一扩散区域与半导体层上的第二扩散区域分离。第一和第二扩散区域之间的半导体层的一部分由电漂浮体区域组成。

93. 发明公开

KR1020100030580A 자성 세선 유닛 및 기억 장치 无效
标题翻译：磁线单元和存储设备
公开(公告)号：KR1020100030580A
公开(公告)日：2010-03-18
申请号：KR1020090082719
申请日：2009-09-02
申请人： 후지쯔 가부시끼가이샤
发明人： 나가사카게이이치 , 아시다히로시 , 오치아이다카오 , 다마노이겐
IPC分类号： H01L21/8246 , H01L27/105 , H01L43/08 , G11C11/15
CPC分类号： G11C19/0841 , G11C11/161 , G11C11/1673 , G11C11/1675
摘要： PURPOSE: A magnetic wire unit and a storage device are provided to reduce the current for the movement of a magnetic domain walls using a material of which an easy magnetization axis is switchable between a first direction and a second direction perpendicular to the first direction as a magnetic wire. CONSTITUTION: A magnetic wire(12) includes a material with a easy magnetization axis. The easy magnetization axis is switchable between a first direction and a second direction. The second direction is perpendicular to the first direction. A current supply unit(20) supplies current to the metal wire and moves the magnetic domain wall(48).
摘要翻译：目的：提供一种磁线单元和存储装置，以减少磁畴壁运动的电流，使用易磁化轴可在第一方向和垂直于第一方向的第二方向之间切换的材料作为磁线。构成：磁线（12）包括易磁化轴的材料。易磁化轴可在第一方向和第二方向之间切换。第二方向垂直于第一方向。电流供应单元（20）向金属线提供电流并移动磁畴壁（48）。

94. 发明公开

KR1020100013930A 스핀 홀 효과를 이용한 자기메모리셀 판독 방법 및자기메모리 장치 有权
标题翻译：磁性记忆体装置及使用旋转效应读取磁记忆体的方法
公开(公告)号：KR1020100013930A
公开(公告)日：2010-02-10
申请号：KR1020080075690
申请日：2008-08-01
申请人： 한국과학기술연구원
发明人： 구현철 , 한석희 , 장준연 , 김형준
IPC分类号： G11C11/15
CPC分类号： H01L43/065 , G11C11/161 , G11C11/1673 , G11C11/18 , H01L27/226 , H01L29/66462 , H01L29/7781
摘要： PURPOSE: A magnetic memory cell reading method using a spin hall effect and a memory device thereof are provided to easily read the information of a magnetic memory cell by including a magnetic material in the magnetic memory cell and using a spin hole effect. CONSTITUTION: A substrate unit for reading includes a channel layer. A magnetic memory cell(150) is located on the substrate unit. The magnetic memory cell includes a magnetic material. A magnetic material transfers a spin information to an electronics passing through a channel layer(107). Information stored in the magnetic memory cell is found by the voltage between side terminals of the channel layer caused by an electronics movement to the direction of the channel layer width by a spin hall effect.
摘要翻译：目的：提供使用旋转霍尔效应的磁存储单元读取方法及其存储器件，以通过在磁存储单元中包括磁性材料并使用旋转孔效应来容易地读取磁存储单元的信息。构成：用于读取的衬底单元包括通道层。磁性存储单元（150）位于衬底单元上。磁存储单元包括磁性材料。磁性材料将自旋信息传送到穿过沟道层（107）的电子器件。存储在磁存储单元中的信息由通过电子装置引起的沟道层的侧端之间的电压通过纺丝室效应而发生到沟道层宽度的方向上。

95. 发明公开

KR1020090105132A 스핀 토크 변환을 이용한 이중 자기터널접합 소자를 사용한ＸＯＲ 및 ＸＮＯＲ 논리 연산장치 有权
标题翻译：使用双重STT-MTJ进行异或电磁逻辑电路的器件
公开(公告)号：KR1020090105132A
公开(公告)日：2009-10-07
申请号：KR1020080030405
申请日：2008-04-01
申请人： 이화여자대학교 산학협력단
发明人： 신형순 , 이승연 , 김지현 , 이현주 , 김소정
IPC分类号： H01L43/00 , H01L43/08 , G11C11/15
CPC分类号： G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C11/16 , G01R33/093 , H01L43/08
摘要： PURPOSE: An XOR and XNOR logic device using a magnetic tunnel junction device is provided to increase an operation speed by not requiring an initialization process. CONSTITUTION: An XOR and XNOR logic device includes a first magnetic tunnel junction device(100), a second magnetic tunnel junction device(200), and a third dielectric layer(330). The first magnetic tunnel junction device is comprised of a first pinned layer(110), a first dielectric layer(130), and a first free layer(120). A first input signal is applied to the first pinned layer. A magnetization direction of the first pinned layer is fixed. The first dielectric layer is formed under the first pinned layer. The first dielectric layer is used for electrical insulation. The first free layer is formed under the first dielectric layer. The magnetization direction of the first free layer is changed. The second magnetic tunnel junction device is comprised of a second pinned layer(210), a second dielectric layer(230), and a second free layer(220). A second input signal is applied to the second pinned layer. The magnetization direction of the second pinned layer is fixed. The second dielectric layer is formed on the second pinned layer. The second dielectric layer is used for the electrical insulation. The second free layer is formed on the second dielectric layer. The magnetization direction of the second free layer is changed. The third dielectric layer is formed between the first and second magnetic tunnel junction devices. The third dielectric layer is used for the electrical insulation.
摘要翻译：目的：提供使用磁性隧道结装置的XOR和XNOR逻辑器件，以通过不需要初始化过程来提高操作速度。构造：XOR和XNOR逻辑器件包括第一磁性隧道结器件（100），第二磁性隧道结器件（200）和第三介电层（330）。第一磁性隧道结装置包括第一被钉扎层（110），第一介电层（130）和第一自由层（120）。第一输入信号被施加到第一固定层。第一被钉扎层的磁化方向是固定的。第一介电层形成在第一固定层下面。第一介电层用于电绝缘。第一自由层形成在第一介电层下面。第一自由层的磁化方向发生变化。第二磁性隧道结装置包括第二被钉扎层（210），第二介电层（230）和第二自由层（220）。第二输入信号被施加到第二被钉扎层。第二被钉扎层的磁化方向是固定的。第二介电层形成在第二钉扎层上。第二电介质层用于电绝缘。第二自由层形成在第二介电层上。第二自由层的磁化方向发生变化。第三电介质层形成在第一和第二磁性隧道结器件之间。第三电介质层用于电绝缘。

96. 发明公开

KR1020090083870A 자기 저항 효과 소자 및 그 제조 방법 无效
标题翻译：磁阻效应器件及其制造方法
公开(公告)号：KR1020090083870A
公开(公告)日：2009-08-04
申请号：KR1020090006858
申请日：2009-01-29
申请人： 가부시끼가이샤 도시바
发明人： 후꾸자와히데아끼 , 무라까미슈이찌 , 유아사히로미 , 후지요시히꼬
IPC分类号： H01L43/08 , G11B5/39 , H01L27/10 , G06F1/16
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , G01R33/04 , G01R33/093 , G11B5/3906 , G11B2005/3996 , G11C11/16 , G11C11/161 , G11C11/1673 , G11C11/1675 , H01L27/228 , H01L43/10 , H01L43/12 , G11B5/39
摘要： A magnetic resistance effect device and a manufacturing method thereof are provided to generate the difference of the penetration of the up-spin electron and down-spin electron. The magnetization direction of the magnetization fixation is materially generated to one-direction. The magnetization direction of the magnetization free layer is changed corresponding to the external magnetic field. The intermediate layer is formed between the magnetization fixation and the magnetization free layer. A cap layer(19) is formed on the magnetization fixation or the magnetization free layer. A magneto-resistive film comprises the magnetization fixation or the magnetization free layer and the functional layer formed among the interface of the cap layer. A pair of electrodes(11,20) perpendicularly flow the current in the membrane surface of the magneto-resistive film.
摘要翻译：提供磁阻效应器件及其制造方法以产生上旋电子和向下旋转电子的穿透差。磁化固定的磁化方向在一个方向实质上产生。磁化自由层的磁化方向根据外部磁场而变化。中间层形成在磁化固定和无磁化层之间。在磁化固定或无磁化层上形成盖层（19）。磁阻膜包括磁化固定或磁化自由层和在盖层的界面之间形成的功能层。一对电极（11,20）垂直地流过磁阻膜的膜表面中的电流。

97. 发明授权

KR100902850B1 자기 랜덤 액세스 메모리의 정보판독방법 失效
标题翻译：在磁随机存取存储器中读出信息的方法
公开(公告)号：KR100902850B1
公开(公告)日：2009-07-06
申请号：KR1020070105604
申请日：2007-10-19
申请人： 서울대학교산학협력단
发明人： 김상국 , 이기석 , 유영상
IPC分类号： G11C11/15
CPC分类号： G11C11/161 , G11C11/1673
摘要： 자기 랜덤 액세스 메모리의 정보판독방법이 개시된다. 본 발명에 따른 자기 랜덤 액세스 메모리의 정보판독방법은 판독전극, 자기고정층, 자기소용돌이가 형성되어 있는 자기자유층 및 상기 자기자유층과 오믹 콘택되도록 배치되어 있는 복수의 구동전극쌍을 구비한 자기기록소자가 행 및 열로 정렬된 자기 랜덤 액세스 메모리를 준비한다. 그리고 자기기록소자에 구비된 자기자유층에 형성되어 있는 자기소용돌이 중심의 수직자화 방향에 따라 "0" 또는 "1"을 할당한다. 그리고 선택된 자기기록소자에 구비된 복수의 구동전극쌍에 전압을 인가하여, 선택된 자기기록소자에 구비된 자기자유층에 형성되어 있는 자기소용돌이 중심을 선택된 자기기록소자에 구비된 자기자유층 상에서 회전시킨다. 그리고 선택된 자기기록소자에 전압을 인가하여 발생되는 전류로부터 도출되는 자기저항의 특성을 측정함으로써, 상기 선택된 자기기록소자에 할당된 "0" 또는 "1"을 판독한다. 본 발명에 의하면, 자기기록소자의 자기자유층에 형성되어 있는 자기소용돌이 중심의 수직자화 방향에 따라 선택적으로 자기소용돌이 중심의 회전 반경을 크게 증가시킬 수 있게 되어 적은 전력으로 명확하게 정보를 판독할 수 있다. 또한, 시간에 따라 방향이 변하는 전류 또는 자기장을 이용함으로써 정보를 판독하고자 하는 자기기록소자의 선택이 용이하게 된다.

98. 发明公开

KR1020090057781A 저항체를 이용한 비휘발성 메모리 장치, 이를 포함하는메모리 시스템 有权
标题翻译：使用可变电阻元件的非易失性存储器件，包含其的存储器系统
公开(公告)号：KR1020090057781A
公开(公告)日：2009-06-08
申请号：KR1020070124512
申请日：2007-12-03
申请人： 삼성전자주식회사
发明人： 이광진 , 김두응 , 김혜진
IPC分类号： G11C16/10 , G11C16/06 , G11C16/20 , H01L21/8247
CPC分类号： G11C13/0064 , G11C7/1078 , G11C7/1096 , G11C11/1673 , G11C11/1675 , G11C11/1693 , G11C11/56 , G11C11/5628 , G11C11/5678 , G11C13/0004 , G11C13/0061 , G11C13/0069 , G11C15/00 , G11C2013/0078 , G11C2211/5621 , G11C2211/5642 , G11C2211/5643
摘要： A non-volatile memory device and a memory system including the device are provided to increase a write cycle time, thereby optimizing or minimizing size of a write buffer. A memory cell array(110) comprises plural non-volatile memory cells. A timer(140) counts data recovery time of the non-volatile memory cells. A write circuit(170) writes write data on the non-volatile memory cells. A write buffer(165) stores the write data written on the non-volatile memory cells. The write buffer has a size capable of storing m write data. The write circuit writes first to mth write data on the non-volatile memory cells during first to mth write cycles. The write circuit controls at least one write cycle time, and stores the first to mth write data in the write buffer during the data recovery time.
摘要翻译：提供非易失性存储器件和包括该器件的存储器系统以增加写周期时间，从而优化或最小化写缓冲器的大小。存储单元阵列（110）包括多个非易失性存储单元。定时器（140）对非易失性存储器单元的数据恢复时间进行计数。写入电路（170）将写入数据写入非易失性存储器单元。写缓冲器（165）存储写入非易失性存储单元的写数据。写入缓冲器具有能够存储m个写入数据的大小。写电路在第一到第m写周期期间首先写入非易失性存储器单元上的第m个写入数据。写入电路控制至少一个写入周期时间，并且在数据恢复时间期间将第一至第m写入数据存储在写入缓冲器中。

99. 发明公开

KR1020090029751A 스핀 전달을 이용하여 자성 메모리 구조물을 제공하기 위한방법 및 시스템 有权
标题翻译：用于提供使用旋转转移的磁记忆结构的方法和系统
公开(公告)号：KR1020090029751A
公开(公告)日：2009-03-23
申请号：KR1020087032156
申请日：2007-05-23
申请人： 그랜디스, 인코포레이티드 , 가부시끼가이샤 르네사스 테크놀로지
发明人： 루오,씨아오 , 첸,유진,유준 , 왕,리엔-창 , 후아이,이밍
IPC分类号： G11C11/00
CPC分类号： G11C11/1675 , G11C8/12 , G11C8/14 , G11C11/1657 , G11C11/1659 , G11C11/1673
摘要： A method and system for providing a magnetic memory is described. The method and system include providing magnetic memory cells, local and global word lines, bit lines, and source lines. Each magnetic memory cell includes a magnetic element and a selection device connected with the magnetic element. The magnetic element is programmed by first and second write currents driven through the magnetic element in first and second directions. The local word lines are connected with the selection device of and have a first resistivity. Each global word line corresponds to a portion of the local word lines and has a resistivity lower than the first resistivity. The bit lines are connected with the magnetic element. The source lines are connected with the selection device. Each source line corresponds to a more than one of the magnetic memory cells and carries the first and second write currents.
摘要翻译：描述了一种用于提供磁存储器的方法和系统。该方法和系统包括提供磁存储器单元，局部和全局字线，位线和源极线。每个磁存储单元包括磁性元件和与该磁性元件连接的选择装置。磁性元件通过在第一和第二方向通过磁性元件驱动的第一和第二写入电流来编程。局部字线与第一电阻率的选择装置连接。每个全局字线对应于局部字线的一部分，并具有低于第一电阻率的电阻率。位线与磁性元件连接。源极线与选择器件连接。每个源极线对应于多个磁存储器单元并且承载第一和第二写入电流。

100. 发明公开

KR1020090007201A 자기저항 디바이스 有权
标题翻译：磁电装置
公开(公告)号：KR1020090007201A
公开(公告)日：2009-01-16
申请号：KR1020080025611
申请日：2008-03-19
申请人： 가부시키가이샤 히타치세이사쿠쇼 , 유니베르시떼 파리스-쉬드 , 상뜨르 나쇼날 드 라 러쉐르쉬 샹띠피끄
发明人： 분더리히,요르그 , 샤뻬르,끌로드 , 융비르트,토마스 , 제멘,잔 , 갈라거,브라이언 , 드볼데,띠보
IPC分类号： G11C11/15 , G11B5/39
CPC分类号： G01R33/093 , G11C11/161 , G11C11/1673 , G11C11/1675 , G11C11/5607 , H01L43/08
摘要： A magnetoresistive device is provided to switch a magnetization of a ferromagnetic region between a first orientation and a second orientation by using only electric field pulse. A magnetization(3) of a ferromagnetic device(1) is arranged according to a magnetic easy axis(2). An external magnetic field(5) is selectively supplied in order to support a processional switching and in order to stabilize reorientation of the magnetization according to orientation, and is fixed according to a hard axis. A magnetic anisotropy field and the selective external magnetic field cause an effective electric field(6). A electric field pulse(7) is vertically supplied at a plane of a layer in order to trigger a processional reorientation of the magnetization and in order to change the magnetic anisotropy of the ferromagnetic device.
摘要翻译：提供磁阻器件以通过仅使用电场脉冲来在第一取向和第二取向之间切换铁磁区域的磁化。磁性装置（1）的磁化（3）根据易磁化轴（2）布置。选择性地提供外部磁场（5）以支持行程切换，并且为了稳定根据取向的磁化的重新定向，并且根据硬轴固定。磁各向异性场和选择性外部磁场引起有效电场（6）。在层的平面上垂直地提供电场脉冲（7），以便触发磁化的重新取向，并改变铁磁性器件的磁各向异性。

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