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1. 发明专利

KR20210032395A KR20210032395A - Solid-state imaging device, and electronic device 审中-公开
公开(公告)号：KR20210032395A
公开(公告)日：2021-03-24
申请号：KR1020217001935A
申请日：2019-07-23
申请人： 소니 세미컨덕터 솔루션즈 가부시키가이샤
发明人： 나오키 사카
IPC分类号： H01L27/146 , H01L29/08 , H01L29/78 , H04N5/374
CPC分类号： H01L27/146 , H01L29/0847 , H01L29/78 , H01L29/7833 , H04N5/369 , H04N5/374
摘要： 본 기술은, 전류가 흐르는 방향에 응한 특성의 변동에 대응할 수 있도록 하는 고체 촬상 장치, 및, 전자 기기에 관한 것이다. 광전변환부를 갖는 화소가 2차원 형상으로 배치되는 화소 어레이부를 구비하고, 화소의 트랜지스터는, 소스측의 LDD 영역과 드레인측의 LDD 영역에서의 게이트의 하측에의 오버랩량이 다르고, 또한, 소스측의 LDD 영역의 접합 깊이와 드레인측의 LDD 영역의 접합 깊이가 다른 구조를 갖는 고체 촬상 장치가 제공된다. 본 기술은, 예를 들면, CMOS 이미지 센서에 적용할 수 있다.

2. 发明专利

JP5467781B2 Trench-gate semiconductor device, and a mis method of manufacturing a device 有权
公开(公告)号：JP5467781B2
公开(公告)日：2014-04-09
申请号：JP2009049460
申请日：2009-03-03
申请人：シリコニックスインコーポレーテッド
发明人：ダーウィッシュ，モハメド・エヌ , ユー，クリスティーナ , ジャイルズ，フレドリック・ピィ , ルイ，カム・ホン , チェン，クオ−イン , テリル，カイル , パタナヤック，デバ・エヌ
IPC分类号： H01L29/78 , H01L21/28 , H01L21/336 , H01L29/06 , H01L29/08 , H01L29/423 , H01L29/49 , H01L29/51
CPC分类号： H01L29/42368 , H01L21/28185 , H01L21/28194 , H01L21/28211 , H01L21/28238 , H01L29/0634 , H01L29/0847 , H01L29/4983 , H01L29/512 , H01L29/518 , H01L29/66621 , H01L29/7813 , H01L29/7834
摘要： The gate oxide layer of a trench MIS device includes a graduated transition region, where the thickness of the gate oxide layer decreases gradually from a thick section adjacent the bottom of the trench to a thin section adjacent the sidewall of the trench. The PN junction between the body and drain regions intersects the trench in the transition region. This structure allows for a greater margin of error in the placement of the PN junction during the manufacture of the device, since the intersection between the PN junction can be located anywhere in the transition region. The MIS device also has improved breakdown characteristics.

3. 发明专利

JP2013225685A Metal-oxide-semiconductor device including buried lightly-doped drain region 审中-公开
标题翻译：金属氧化物半导体器件，包括埋入式轻型漏水区域
公开(公告)号：JP2013225685A
公开(公告)日：2013-10-31
申请号：JP2013123280
申请日：2013-06-12
申请人： Agere Systems Inc , アギアシステムズインコーポレーテッド
发明人： MUHAMMED AIMAN SHIBIB , XU SHUMING
IPC分类号： H01L21/336 , H01L29/78 , H01L23/58 , H01L29/06 , H01L29/08 , H01L29/40 , H01L29/417 , H01L29/76 , H01L31/062
CPC分类号： H01L29/402 , H01L29/0615 , H01L29/0847 , H01L29/4175 , H01L29/66659 , H01L29/7835
摘要： PROBLEM TO BE SOLVED: To reduce the on-resistance of a MOS device without significantly increasing HCD and/or the gate-to-drain capacitance, thereby improving high-frequency performance and reliability.SOLUTION: A MOS device comprises: a semiconductor layer 204 of a first conductivity type; a source region 206 of a second conductivity type formed in the semiconductor layer; and a drain region 208 of the second conductivity type formed in the semiconductor layer and separated from the source region. A gate 210 is formed in the vicinity of an upper surface of the semiconductor layer and at least partially between the source region and the drain region. The MOS device further includes a buried LDD region 216 of the second conductivity type formed in the semiconductor layer between the gate region and the drain region. The buried LDD region is separated laterally from the drain region, and a second LDD region 214 of the first conductivity type is formed in the buried LDD region in the vicinity of the upper surface of the semiconductor layer. The second LDD region is self-aligned with the gate and separated laterally from the gate such that the gate does not overlap with the second LDD region.
摘要翻译：要解决的问题：为了降低MOS器件的导通电阻而不显着增加HCD和/或栅极至漏极电容，从而提高高频性能和可靠性。解决方案：MOS器件包括：半导体层204 的第一导电类型; 形成在半导体层中的第二导电类型的源极区206; 以及形成在半导体层中并与源极区分离的第二导电类型的漏极区域208。栅极210形成在半导体层的上表面附近，并且至少部分地形成在源极区域和漏极区域之间。 MOS器件还包括形成在栅极区域和漏极区域之间的半导体层中的第二导电类型的埋入LDD区域216。埋入的LDD区域从漏极区域侧向分离，并且在半导体层的上表面附近的掩埋LDD区域中形成第一导电类型的第二LDD区域214。第二LDD区域与栅极自对准并且从栅极横向分离，使得栅极不与第二LDD区域重叠。

4. 发明专利

JP5198823B2 Method of manufacturing a new transistor having a ultra-thin tip 有权
公开(公告)号：JP5198823B2
公开(公告)日：2013-05-15
申请号：JP2007251079
申请日：2007-09-27
申请人：インテル・コーポレーション
发明人：チョウ，ロバート・エス , チェーン，チャーン−ホン , ジャン，シア−ホン , ウェルドン，ケヴィン・アール , パッカン，ポール・エイ , ヨー，レオポルド・ディ
IPC分类号： H01L21/336 , H01L21/225 , H01L21/28 , H01L21/8238 , H01L29/08 , H01L29/417 , H01L29/423 , H01L29/45 , H01L29/49 , H01L29/78
CPC分类号： H01L29/66613 , H01L21/2254 , H01L21/2257 , H01L21/2807 , H01L21/823814 , H01L21/823828 , H01L21/823864 , H01L29/0847 , H01L29/41775 , H01L29/41783 , H01L29/45 , H01L29/4925 , H01L29/4933 , H01L29/665 , H01L29/6656 , H01L29/6659 , H01L29/66628 , H01L29/66636 , H01L29/7834
摘要： A novel transistor (200) with a low resistance ultra shallow tip region (214) and its method of fabrication. The novel transistor of the present invention has a source/drain extension of tip region (210) comprising an ultra shallow region (214) which extends beneath the gate electrode and a raised region (216).

5. 发明专利

JP4965067B2 The organic thin film transistor having a charge mobility was improved by the surface uneven structure 有权
公开(公告)号：JP4965067B2
公开(公告)日：2012-07-04
申请号：JP2004291174
申请日：2004-10-04
申请人：三星電子株式会社Samsung Electronics Co.,Ltd.
发明人：バレリーシバエフ , エフゲニーバルマトーフ , 銀美徐 , 重漢愼 , 國 ▲みん▼ 韓
IPC分类号： H01L21/312 , H01L29/786 , H01L21/314 , H01L21/336 , H01L27/01 , H01L29/04 , H01L29/08 , H01L31/0392 , H01L51/00 , H01L51/05 , H01L51/30 , H01L51/40
CPC分类号： H01L51/00 , H01L21/312 , H01L51/0002 , H01L51/0036 , H01L51/0039 , H01L51/0043 , H01L51/0516 , H01L51/0545
摘要： Disclosed herein is an organic thin film transistor comprising a substrate, a gate electrode, an organic insulating layer, an organic active layer and source/drain electrodes, wherein the interface between the organic insulating layer and the organic active layer is of relief structure. According to the present invention, an organic thin film transistor of enhanced electric properties can be obtained regardless of the organic insulating materials used.

6. 发明专利

JP4892172B2 Semiconductor device and a method of manufacturing the same 有权
公开(公告)号：JP4892172B2
公开(公告)日：2012-03-07
申请号：JP2003286141
申请日：2003-08-04
申请人：ルネサスエレクトロニクス株式会社
发明人：芳人中沢 , 雄司谷ッ田
IPC分类号： H01L21/822 , H01L29/78 , H01L21/265 , H01L21/336 , H01L27/04 , H01L29/08 , H01L29/10 , H01L29/45 , H01L29/94 , H01L31/0328
CPC分类号： H01L29/7813 , H01L21/2652 , H01L21/26586 , H01L29/0878 , H01L29/1095 , H01L29/456 , H01L29/66727

7. 发明专利

JP4860821B2 Semiconductor device manufacturing method 有权
公开(公告)号：JP4860821B2
公开(公告)日：2012-01-25
申请号：JP2000603095
申请日：2000-03-01
申请人：ゼネラルセミコンダクター,インク.
发明人：ブランチャード、リチャード、エー
IPC分类号： H01L29/43 , H01L29/78 , H01L21/336 , H01L29/06 , H01L29/08 , H01L29/417 , H01L29/423 , H01L29/49
CPC分类号： H01L29/7813 , H01L29/0696 , H01L29/0847 , H01L29/41741 , H01L29/41766 , H01L29/7809

8. 发明专利

JP4847699B2 Device incorporating the method and the junction to pin release the Fermi level of the semiconductor in the electrical junction 有权
标题翻译：空值
公开(公告)号：JP4847699B2
公开(公告)日：2011-12-28
申请号：JP2004539828
申请日：2003-08-08
申请人：エイコーン・テクノロジイズ・インコーポレーテッド
发明人：グルップ，ダニエル・イー , コネリー，ダニエル・ジェイ
IPC分类号： H01L29/47 , H01L21/285 , H01L21/329 , H01L21/336 , H01L29/08 , H01L29/45 , H01L29/78 , H01L29/786 , H01L29/812 , H01L29/872
CPC分类号： H01L29/456 , H01L21/28537 , H01L29/0895 , H01L29/16 , H01L29/1608 , H01L29/161 , H01L29/45 , H01L29/47 , H01L29/66143 , H01L29/66643 , H01L29/78 , H01L29/7839 , H01L29/785 , H01L29/806 , H01L29/812 , H01L29/872
摘要： There is described an electrical junction comprising an interface layer disposed between a metal and a semiconductor. The interface layer includes a passivating material for passivating the surface of the semiconductor. The interface layer has a thickness configured to reduce contact resistance between the metal and the semiconductor from that which would exist at a junction between the metal and the semiconductor without the interface layer disposed therebetween.
摘要翻译：描述了一种电连接，其包括设置在金属和半导体之间的界面层。界面层包括用于钝化半导体表面的钝化材料。界面层具有被配置为降低金属和半导体之间的接触电阻与在金属和半导体之间的结处存在的接触电阻的厚度，而其间不设置界面层。

10. 发明专利

JP4791704B2 Reverse conducting semiconductor device and a method of manufacturing the same 有权
公开(公告)号：JP4791704B2
公开(公告)日：2011-10-12
申请号：JP2004133698
申请日：2004-04-28
申请人：三菱電機株式会社
发明人：綾山本 , 眞司青野 , 英樹高橋
IPC分类号： H01L29/06 , H01L29/739 , H01L21/322 , H01L21/331 , H01L21/336 , H01L21/8234 , H01L27/04 , H01L27/06 , H01L27/088 , H01L29/08 , H01L29/76 , H01L29/78
CPC分类号： H01L21/263 , H01L29/0834 , H01L29/7397

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