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1. 发明专利

KR20210037878A KR20210037878A - Welding Apparatus for Diamond Tip for carbide tool bite 审中-公开
公开(公告)号：KR20210037878A
公开(公告)日：2021-04-07
申请号：KR1020190120330A
申请日：2019-09-30
申请人： 김성태
发明人： 김성태
IPC分类号： B23K11/30 , B23K15/06 , B23K31/12
CPC分类号： B23K11/30 , B23K15/06 , B23K31/125
摘要： 본 발명은 다이아몬드 팁 용접 장치에 관한 것으로서, 작업 공간이 구비된 챔버, 섕크 홀더, 다이아몬드 팁이 놓인 솔더 부분에 전류를 제공하는 한 쌍의 전극, 다이아몬드 팁의 위치를 조절하는 위치조절부, 다이아몬드 팁에 광을 조사하는 광 조사부, 광 조사부에 의해 조사된 광이 다이아몬드 팁에서 반사된 광을 수신하는 광 수신부, 광 수신부에 의해 수신된 광을 기초로, 다이아몬드 팁의 안착 상태를 나타내는 안착상태신호를 출력하는 안착상태확인부, 시각적 방식이나 청각적 방식으로 다이아몬드 팁의 안착 상태를 알리는 안착상태알림부를 포함하여 이루어진다. 본 발명에 따르면, 바이트에 다이아몬드 팁을 용접할 때, 광을 이용하여 다이아몬드 팁이 정확한 위치에 놓여 있는지를 확인할 수 있으므로, 다이아몬드 팁의 위치를 올바로 조절할 수 있으며, 작업자의 숙련도나 집중도에 전적으로 의존하지 않고, 다이아몬드 팁을 정확한 위치에 올바로 용접할 수 있다.

2. 发明专利

JP6563166B2 FIBおよび/または電子顕微鏡とともに使用するデュアル・レーザ・ビーム・システム有权
公开(公告)号：JP6563166B2
公开(公告)日：2019-08-21
申请号：JP2013228872
申请日：2013-11-04
申请人：エフ・イ−・アイ・カンパニー
发明人：ケリー・ブルランド
IPC分类号： B23K26/00 , B23K26/36 , B23K26/06 , B23K26/067 , B23K15/00 , B23K15/06 , H01J37/317 , H01J37/28 , B23K26/12

3. 发明专利

JP2017060961A 電子ビーム溶接装置及びオリフィス审中-公开
公开(公告)号：JP2017060961A
公开(公告)日：2017-03-30
申请号：JP2015186825
申请日：2015-09-24
申请人： NECエンジニアリング株式会社
发明人：中島透 , 児玉浩三 , 大野春彦
IPC分类号： B23K15/00 , B23K15/06
摘要：【課題】スパッタ分子がフィラメントを有する真空チャンバに流入することを、抑制することのできる電子ビーム溶接装置の提供。【解決手段】電子ビーム溶接装置(100)が備える電子銃部(110)は、第1の真空チャンバ(VC1)と、第1の真空チャンバ(VC1)と第1の開口(151)を介して連結され、第1の真空チャンバ(VC1)よりも試料室(120)側に設けられている第2の真空チャンバ(VC2)と、第1の開口(151)に設けられている第1のオリフィス(171)と、を含む。第1のオリフィス(171)は、電子ビーム(140)を溶接対象物(W1、W2)に照射したときに溶接対象物(W1、W2)から生じたスパッタ分子(M1〜M4)が、第2の真空チャンバ(VC2)から第1の真空チャンバ(VC1)へ流入することを抑制する孔(171a)を有する。【選択図】図1

4. 发明专利

JP6037741B2 移動型真空溶接装置有权
标题翻译：移动真空焊接装置
公开(公告)号：JP6037741B2
公开(公告)日：2016-12-07
申请号：JP2012204689
申请日：2012-09-18
申请人：三菱重工工作機械株式会社
发明人：堀匠 , 藤谷泰之 , 奥田剛久 , 長谷川修 , 仙入克也 , 渡辺眞生 , 貝漕高明
IPC分类号： F16J12/00 , F16J13/22 , B23K26/21 , B23K26/70 , B23K15/06 , B23K15/04 , B23K26/12
CPC分类号： B23K26/1462 , B23K15/006 , B23K15/04 , B23K15/06 , B23K26/1224 , B23K26/127 , B23K26/24 , B23K26/282 , B23K2201/06 , B23K2203/05

5. 发明专利

JP2013107084A Beam welding method, vacuum packaging method, vacuum insulating material produced by the vacuum packaging method, and heating cooker using the vacuum insulating material 有权
标题翻译：光束焊接方法，真空包装方法，由真空包装方法生产的真空绝热材料和使用真空绝热材料的加热烹饪器
公开(公告)号：JP2013107084A
公开(公告)日：2013-06-06
申请号：JP2011251662
申请日：2011-11-17
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： SHINOKI TOSHIO , SEKINE KATSUTEN
IPC分类号： B23K15/00 , A47J27/00 , B23K15/06 , B23K26/20 , B23K26/38 , B65D81/20 , B65D81/38 , F16L59/06
摘要： PROBLEM TO BE SOLVED: To provide: a beam welding method by which metal foils can be welded more easily and reliably; a vacuum packaging method; a vacuum insulating material produced by the vacuum packaging method; and a heating cooker using the vacuum insulating material.SOLUTION: A beam welding method includes: a metal foil-laminating step of putting a first metal foil and a second metal foil placed on top of the first metal foil, on each of a main-placing surface of a supporting pedestal and a sub-placing surface thereof, both surfaces being adjacent to each other; an adhesion step of causing portions of the first and second metal foils put on the main-placing surface to adhere to each other along an assumed welding line, in a state that portions of the first and second metal foils put on the sub-placing surface are released; and a welding and cutting step of cutting the portions of the first and second metal foils put on the sub-placing surface while welding the portions of the first and second metal foils put on the main-placing surface along the assumed welding line, by heating the first and second metal foils through a concentration irradiation of electron beam under a specified vacuum environment after conducting the adhesion step.
摘要翻译：要解决的问题：提供：能够更容易且可靠地焊接金属箔的光束焊接方法; 真空包装方法; 通过真空包装方法制造的真空绝热材料; 以及使用真空绝热材料的加热烹调器。解决方案：一种焊接方法，包括：将金属箔层压步骤，将第一金属箔和第二金属箔放置在第一金属箔的顶部上，在支撑台的主放置表面和两个表面彼此相邻; 在第一和第二金属箔的放置在副放置面上的部分的状态下，使第一和第二金属箔的放置在主放置面上的部分沿着假设焊接线彼此粘合的粘合步骤被释放以及焊接和切割步骤，在沿着假定的焊接线焊接放置在主放置表面上的第一和第二金属箔的部分时，通过加热来切割放置在辅助放置表面上的第一和第二金属箔的部分第一和第二金属箔在进行粘合步骤之后通过电子束的浓度照射在特定的真空环境下进行。版权所有（C）2013，JPO＆INPIT

6. 发明专利

JP2010541210A Wafer bonding, which is activated by ion implantation 审中-公开
公开(公告)号：JP2010541210A
公开(公告)日：2010-12-24
申请号：JP2010525965
申请日：2008-09-18
申请人：バリアン・セミコンダクター・エクイップメント・アソシエイツ・インコーポレイテッド
发明人：エローヒン、ユリ , サリバン、ポール , ヌナン、ピーター , ワルター、スティーブン、アール．
IPC分类号： H01L21/02 , B23K15/00 , B23K15/06 , B23K20/00 , B23K20/14 , B23K20/24 , H01L21/265 , H01L27/12
CPC分类号： H01L21/76251 , H01J37/20 , H01J37/3171 , H01J2237/201 , H01J2237/202 , H01L21/26506 , H01L21/6835 , H01L2221/68359 , H01L2924/30105
摘要：【解決手段】イオン注入によって活性化された２つの基板を接合するウェハ接合方法を開示する。インサイチュイオン接合チャンバによって、イオン活性化および接合を、製造処理ラインで利用されている既存の処理ツールで、実行することができるようになっている。基板のうち少なくとも一方の基板のイオン活性化を低い注入エネルギーで行って、薄い表面層よりも下方のウェハ材料がイオン活性化によって影響をうけないようにする。
【選択図】図８

7. 发明专利

JP2004167536A Electron beam machine 有权
公开(公告)号：JP2004167536A
公开(公告)日：2004-06-17
申请号：JP2002335552
申请日：2002-11-19
申请人： Aisin Aw Co Ltd , Mitsubishi Electric Corp , アイシン・エィ・ダブリュ株式会社 , 三菱電機株式会社
发明人： SHINKO NOZOMI , KATO SUSUMU , YAMAMOTO YOSHIHIRO
IPC分类号： B23K15/06 , B23K15/00
摘要： PROBLEM TO BE SOLVED: To provide an electron beam machine in which a cycle time can be reduced.
SOLUTION: The electron beam machine 1 comprises a plurality of machining chambers 21 and 22 for storing the object 8 to be machined, an electron gun 23 applying electron beams to machining objects 8 stored in respective machining chambers 21 and 22, and a vacuum apparatus 3 for performing evacuation inside respective machining chambers 21 and 22. The electron gun 23 is provided so as to be movable between the respective machining chambers 21 and 22 while maintaining the airtight conditions of the machining chambers 21 and 22. In the vacuum apparatus 3, evacuation of each machining chamber 21 and 22 can respectively individually be performed. In the electron beam machine 1, while the electron gun 23 is moved to the machining chamber 21 or 22 storing the machining object 8, evacuation of the machining chamber 21 or 22 can be started.
COPYRIGHT: (C)2004,JPO

8. 发明专利

JP3536980B2 Processing method of laser ablation mask 有权
公开(公告)号：JP3536980B2
公开(公告)日：2004-06-14
申请号：JP2001070491
申请日：2001-03-13
申请人：アジレント・テクノロジーズ・インク
发明人：ローレンス・ハク・リー
IPC分类号： B41J2/16 , B23K15/06 , B23K26/00 , B23K26/06 , C23C14/54 , C23C14/56 , F04B37/16 , G03F1/00 , G03F1/68
CPC分类号： C23C14/564 , C23C14/54
摘要： A method of fabricating a high energy radiation mask, such as a laser ablation mask for manufacturing inkjet printheads, includes a multi-stage evacuation process and/or a step of reducing the deposition rate of silicon dioxide during formation of a dielectric stack. When the multi-stage evacuation procedure is combined with the slower deposition rate of silicon dioxide, the resulting mask has a surprisingly low defect density. In the first embodiment, the evacuation procedure is initiated using a low-rate first evacuation connection. The relatively slow purging of a vacuum chamber in which the dielectric stack is subsequently formed controls turbulence and environmental changes that can generate contamination and water along the surface of the substrate on which the dielectric stack is formed. When a pressure setpoint is reached, a second roughing connection is activated to increase the speed of the procedure. The second connection has a higher maximum rate than the first connection. In the preferred embodiment, there is an overlap in the activations of the first and second connections. When another setpoint is reached, a high vacuum connection is activated in order to bring the vacuum chamber to a high vacuum condition for deposition of the dielectric stack. The dielectric stack includes alternating layers of higher refractive index material and low refractive index material. The low refractive index material is silicon dioxide that is deposited at a rate in the optimal range of 1.0 Å/second to 3.0 Å/second. Practical considerations dictate a range of 1.6 Å/second to 2.4 Å/second.

9. 发明专利

JP2748804B2 失效
公开(公告)号：JP2748804B2
公开(公告)日：1998-05-13
申请号：JP30989492
申请日：1992-11-19
申请人： HITACHI SEISAKUSHO KK
发明人： UMEO KOJI , WAI SHINICHI , SASAKI HIDEAKI , TANI MITSUKYO , SHIOKAWA TAKEJI , IMAI KUNINORI
IPC分类号： B23K15/00 , B23K15/06 , B23K26/21 , B23K31/00 , B23K37/00 , B23K26/00

10. 发明专利

JPH08132256A ELECTRON BEAM MACHINING EQUIPMENT 失效
公开(公告)号：JPH08132256A
公开(公告)日：1996-05-28
申请号：JP27766594
申请日：1994-11-11
申请人： MITSUBISHI ELECTRIC CORP
发明人： TANAKA TOSHIYUKI , ARAKAWA KIYUUZOU , MIURA AKIRA
IPC分类号： B23K15/06
摘要： PURPOSE: To shorten the evacuating time and to execute the electron beam machining by reducing the volume of a machining chamber. CONSTITUTION: A gap between an opening part 18a of a machining chamber 18 and an object 8 to be machined is kept in vacuum freely rotating with a sealing member 19 and a jointing part 10 of both object 8, 9 to be machined are received inside the machining chamber 18. Then, the inside of machining chamber is evacuated with an evacuating means 13 in a state of exposing a jig table 20 and a rotary driving means 11 in the opposite end part of the joining part 10 of the object 8 to be machined to the outside of the machining chamber 18. Accordingly, the volume of the machining chamber 18 can be reduced remarkably and the evacuating time can be shortened.

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