会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明专利
    • Nitride semiconductor substrate
    • 氮化物半导体基板
    • JP2010269970A
    • 2010-12-02
    • JP2009123018
    • 2009-05-21
    • Hitachi Cable Ltd日立電線株式会社
    • YAMAMOTO SHUNSUKE
    • C30B29/38C23C16/01C23C16/02C30B25/18H01L21/205
    • H01L21/0262C30B25/02C30B29/406H01L21/0242H01L21/02458H01L21/0254Y10T83/0405
    • PROBLEM TO BE SOLVED: To provide a nitride semiconductor substrate capable of growing an epitaxial film uniform in characteristics such as film thickness, by increasing its adhesion to a substrate holder so as to achieve a uniform temperature distribution within the substrate plane when growing the film on the nitride semiconductor substrate. SOLUTION: The nitride semiconductor substrate 28 is characterized in that, when defining warpages concave and convex toward a surface plane of the substrate 28 as negative and positive, respectively, drawing a line segment from one end of a rear plane 28a of the substrate to the other end of the rear plane 28a of the substrate via a center line L of the substrate, cutting the substrate 28 along the line segment in the thickness direction, defining the largest value among shortest distances between given points on the drawn line segment and an outline of the cut plane on the rear plane as a warpage H in the diameter direction, obtaining values of the warpage H in the diameter direction in the circumferential direction of the substrate and defining the largest and smallest values among the same as Hmax and Hmin, respectively, the warpage H in the diameter direction is specified so as to satisfy the relation: Hmax-Hmin≤30 μm. COPYRIGHT: (C)2011,JPO&INPIT
    • 要解决的问题:提供一种氮化物半导体衬底,其能够通过增加其对衬底保持器的粘附性而使诸如膜厚度的特性生长均匀的氮化物半导体衬底,以便当生长时在衬底平面内实现均匀的温度分布 该氮化物半导体衬底上的膜。 解决方案:氮化物半导体基板28的特征在于,当分别将基板28的表面平面凹凸的翘曲定义为负的和正的时,从该基板28的后平面28a的一端 基板经由基板的中心线L与基板的后平面28a的另一端相连,沿着线段在厚度方向上切割基板28,在绘制线段上的给定点之间的最短距离内定义最大值 以及作为直径方向的翘曲H的后平面上的切割面的轮廓,求出基板的周向的直径方向的翘曲H的值,并将与Hmax相同的最大值和最小值定义为 Hmin中,规定了直径方向的翘曲H,以满足关系:Hmax-Hmin≤30μm。 版权所有(C)2011,JPO&INPIT