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1. 发明专利

JP2013149857A Magnetoresistance effect element and magnetic memory 有权
标题翻译：磁阻效应元件和磁记忆
公开(公告)号：JP2013149857A
公开(公告)日：2013-08-01
申请号：JP2012010359
申请日：2012-01-20
申请人： Renesas Electronics Corp , ルネサスエレクトロニクス株式会社
发明人： KARIYADA HIDETSUGU , SUEMITSU KATSUMI
IPC分类号： H01L21/8246 , H01F10/16 , H01F10/30 , H01F10/32 , H01L27/105 , H01L29/82 , H01L43/08
CPC分类号： H01L43/02 , G11C11/161 , G11C11/1673 , G11C11/1675 , H01L27/228 , H01L43/08 , H01L43/10
摘要： PROBLEM TO BE SOLVED: To suppress reduction of an MR ratio caused by a high temperature heat processing in a magnetoresistance effect element using a vertical magnetization film.SOLUTION: The magnetoresistance effect element comprises: a data storage layer; a data reference layer; and a MgO film sandwiched between the data storage layer and the data reference layer. The data storage layer comprises: a CoFeB film which contacts MgO film; a vertical magnetization film; and a Ta film sandwiched between the CoFeB film and the vertical magnetization film. The CoFeB film and the vertical magnetization film are magnetically coupled via the Ta film.
摘要翻译：要解决的问题：为了抑制由使用垂直磁化膜的磁阻效应元件中的高温热处理引起的MR比的降低。解决方案：磁阻效应元件包括：数据存储层; 数据参考层; 以及夹在数据存储层和数据参考层之间的MgO膜。数据存储层包括：与MgO膜接触的CoFeB膜; 垂直磁化膜; 以及夹在CoFeB膜和垂直磁化膜之间的Ta膜。 CoFeB膜和垂直磁化膜通过Ta膜磁耦合。

2. 发明专利

JP2013187409A Magnetic memory cell and method for manufacturing the same 有权
标题翻译：磁性记忆体及其制造方法
公开(公告)号：JP2013187409A
公开(公告)日：2013-09-19
申请号：JP2012052070
申请日：2012-03-08
申请人： Renesas Electronics Corp , ルネサスエレクトロニクス株式会社
发明人： KARIYADA HIDETSUGU , SUEMITSU KATSUMI
IPC分类号： H01L21/8246 , H01L27/105 , H01L29/82 , H01L43/08 , H01L43/10 , H01L43/12
CPC分类号： H01L43/12 , H01L27/222 , H01L43/08 , H01L43/10 , H01L43/14
摘要： PROBLEM TO BE SOLVED: To suppress a short circuit of a magnetic memory cell and deterioration in characteristics of a magnetic layer.SOLUTION: A magnetic memory cell 1 includes: a data storage layer 3; a tunnel barrier layer 4 formed on the data storage layer 3; a reference layer 5 formed on the tunnel barrier layer 4 so as to cover a part of the tunnel barrier layer 4; and a metal oxide layer 7 formed on a portion of the tunnel barrier layer 4 which is not covered with the reference layer 5. The metal oxide layer 7 is formed of an oxide of a material of a portion of the reference layer 5 which is in contact with the tunnel barrier layer 4.
摘要翻译：要解决的问题：为了抑制磁存储单元的短路和磁性层的特性的劣化。磁存储单元1包括：数据存储层3; 形成在数据存储层3上的隧道势垒层4; 形成在隧道势垒层4上以覆盖隧道势垒层4的一部分的参考层5; 以及形成在未被基准层5覆盖的隧道势垒层4的一部分上的金属氧化物层7.金属氧化物层7由参考层5的一部分的材料的氧化物形成，与隧道势垒层4接触。

3. 发明专利

JP2012178541A Magnetic memory 有权
标题翻译：磁记忆
公开(公告)号：JP2012178541A
公开(公告)日：2012-09-13
申请号：JP2011237544
申请日：2011-10-28
申请人： Renesas Electronics Corp , ルネサスエレクトロニクス株式会社
发明人： KARIYADA HIDETSUGU , SUEMITSU KATSUMI , TANIGAWA HIRONOBU , MORI KAORU , SUZUKI AKIHIRO , NAGAHARA KIYOKAZU , OZAKI KOSUKE , OSHIMA NORIKAZU
IPC分类号： H01L27/105 , H01L21/8246 , H01L29/82 , H01L43/08
CPC分类号： H01L43/10 , G01R33/091 , G01R33/098 , G11C11/02 , G11C11/14 , G11C11/15 , G11C11/161 , Y10T428/1114 , Y10T428/1121 , Y10T428/1143
摘要： PROBLEM TO BE SOLVED: To provide a magnetic memory in which a data storage layer has strong vertical magnetic anisotropy and magnetic coupling is strong between the data storage layer and a magnetization fixed layer provided below the data storage layer.SOLUTION: A magnetic memory comprises magnetization fixed layers 50a and 50b which have vertical magnetic anisotropy and in which a magnetization direction is fixed, an interlayer insulation layer 60, an underlying layer 40 formed on upper surfaces of the magnetization fixed layers 50a and 50b and the interlayer insulation layer 60, and a data storage layer 10 which is formed on an upper surface of the underlying layer 40 and has vertical magnetic anisotropy. The underlying layer 40 includes a first magnetic underlying layer 41 formed from a magnetic material and a non-magnetic underlying layer 42 formed on the first magnetic underlying layer 41. A thickness of the first magnetic underlying layer 41 is adjusted to prevent the first magnetic underlying layer 41 from presenting intra-plane magnetic anisotropy on the interlayer insulation layer 60.
摘要翻译：要解决的问题：提供一种数据存储层在数据存储层和设置在数据存储层下方的磁化固定层之间具有强垂直磁各向异性并且磁耦合强的磁存储器。解决方案：磁存储器包括具有垂直磁各向异性并且其中磁化方向固定的磁化固定层50a和50b，层间绝缘层60，形成在磁化固定层50a的上表面上的下层40和 50b和层间绝缘层60，以及形成在下层40的上表面上并具有垂直磁各向异性的数据存储层10。下层40包括由磁性材料形成的第一磁性下层41和形成在第一磁性下层41上的非磁性下层42.调整第一磁性下层41的厚度以防止第一磁性底层层41在层间绝缘层60上呈现面内磁各向异性。版权所有（C）2012，JPO＆INPIT

4. 发明专利

JP2012164821A Mtj film and method of producing the same 审中-公开
标题翻译： MTJ薄膜及其制造方法
公开(公告)号：JP2012164821A
公开(公告)日：2012-08-30
申请号：JP2011024227
申请日：2011-02-07
申请人： Renesas Electronics Corp , ルネサスエレクトロニクス株式会社
发明人： MORI KAORU , KARIYADA HIDETSUGU , SUEMITSU KATSUMI , OSHIMA NORIKAZU
IPC分类号： H01L27/105 , H01L21/8246 , H01L43/08 , H01L43/12
CPC分类号： H01L43/12 , B82Y40/00 , G11C11/161 , H01F10/3236 , H01F10/3254 , H01F10/3286 , H01F41/307 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To minimize deterioration in read characteristics when an MTJ film is produced by forming a tunnel barrier layer on a ferromagnetic layer having high crystal orientation.SOLUTION: The method of producing an MTJ film includes a step for forming a first ferromagnetic layer, a step for forming a tunnel barrier layer on the first ferromagnetic layer, and a step for forming a second ferromagnetic layer on the tunnel barrier layer. The first ferromagnetic layer is a Co/Ni laminate film having perpendicular magnetic anisotropy. The step for forming the tunnel barrier layer includes a step for repeating the unit deposition processing n times (n is an integer of 2 or more). The unit deposition processing includes a step for depositing an Mg film by sputtering, and a step for oxidizing the Mg film thus deposited. The thickness of the Mg film deposited by the first unit deposition processing is 0.3-0.5 nm. The thickness of the Mg film deposited by the second and subsequent unit deposition processing is 0.1-0.45 nm.
摘要翻译：要解决的问题：为了在通过在具有高晶体取向的铁磁层上形成隧道势垒层来制造MTJ膜时，最小化读取特性的劣化。解决方案：制造MTJ膜的方法包括形成第一铁磁层的步骤，在第一铁磁层上形成隧道势垒层的步骤，以及在隧道势垒层上形成第二铁磁层的步骤。第一铁磁层是具有垂直磁各向异性的Co / Ni层压膜。用于形成隧道势垒层的步骤包括重复单元沉积处理n次（n为2以上的整数）的步骤。单元沉积处理包括通过溅射沉积Mg膜的步骤和用于氧化由此沉积的Mg膜的步骤。通过第一单元沉积处理沉积的Mg膜的厚度为0.3-0.5nm。通过第二次和随后的单元沉积处理沉积的Mg膜的厚度为0.1-0.45nm。版权所有（C）2012，JPO＆INPIT

5. 发明专利

JP2014036146A Semiconductor device and manufacturing method of the same 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2014036146A
公开(公告)日：2014-02-24
申请号：JP2012177174
申请日：2012-08-09
申请人： Renesas Electronics Corp , ルネサスエレクトロニクス株式会社
发明人： MORI KAORU , SUZUKI AKIHIRO , KARIYADA HIDETSUGU , SUEMITSU KATSUMI
IPC分类号： H01L21/8246 , G11C11/15 , H01L27/105 , H01L29/82 , H01L43/08 , H01L43/10
CPC分类号： G11C11/161 , G11C11/1659 , G11C11/1675
摘要： PROBLEM TO BE SOLVED: To provide an initialization technique regarding a domain wall motion element, which is suitable for the case where a CoFeB film having perpendicular magnetic anisotropy is used as a domain wall motion layer.SOLUTION: A semiconductor device comprises: a CoFeB film having perpendicular magnetic anisotropy; a first magnetization hard layer which has perpendicular magnetic anisotropy and is magnetically coupled with a first magnetization fixed region of the CoFeB film; a second magnetization hard layer which has perpendicular magnetization anisotropy and is magnetically coupled with a second magnetization fixed region of the CoFeB film; and a magnetization direction control layer having perpendicular magnetization anisotropy stronger than that of the second magnetization hard layer. The second magnetization hard layer is formed on the magnetization direction control layer via a non-magnetic layer and antiferromagnetically coupled with the magnetization direction control layer via the non-magnetic layer. A thickness of the magnetization direction control layer is smaller than a thickness of the second magnetization hard layer.
摘要翻译：要解决的问题：提供一种适用于具有垂直磁各向异性的CoFeB膜作为畴壁运动层的畴壁运动元件的初始化技术。解决方案：一种半导体器件包括：CoFeB膜具有垂直磁各向异性; 具有垂直磁各向异性并与CoFeB膜的第一磁化固定区磁耦合的第一磁化硬化层; 具有垂直磁化各向异性并与CoFeB膜的第二磁化固定区磁耦合的第二磁化硬化层; 磁化方向控制层具有比第二磁化硬化层更强的垂直磁化各向异性。第二磁化硬化层经由非磁性层形成在磁化方向控制层上，并经由非磁性层与磁化方向控制层反铁磁耦合。磁化方向控制层的厚度小于第二磁化硬化层的厚度。

6. 发明专利

JP2013232497A Magnetic material device and manufacturing method thereof 审中-公开
标题翻译：磁性材料装置及其制造方法
公开(公告)号：JP2013232497A
公开(公告)日：2013-11-14
申请号：JP2012103288
申请日：2012-04-27
申请人： Renesas Electronics Corp , ルネサスエレクトロニクス株式会社
发明人： SUZUKI AKIHIRO , SUEMITSU KATSUMI , KARIYADA HIDETSUGU
IPC分类号： H01L43/08 , H01L21/8246 , H01L27/105 , H01L29/82 , H01L43/12
CPC分类号： H01L43/02 , G11C11/161 , G11C11/1655 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C11/18 , H01L43/08 , H01L43/12
摘要： PROBLEM TO BE SOLVED: To reduce a current required for magnetization-switching of a magnetic material layer.SOLUTION: The magnetic material device has a laminate structure including a ground layer, a magnetic material layer, and a cap layer. Materials of the ground layer and the cap layer are different from each other. The magnetic material layer has: a magnetization free region having vertical magnetic anisotropy; and a first characteristic change region and a second characteristic change region positioned on both sides of the magnetization free region in a first plane inner direction. Vertical magnetic anisotropy of the first and second characteristic change regions is weaker than that of the magnetization free region. An external magnetic field containing a component of the first plane inner direction is applied to the magnetization free region. Also, a current in the first plane inner direction is supplied to the magnetization free region.
摘要翻译：要解决的问题：减少磁性材料层的磁化切换所需的电流。解决方案：磁性材料装置具有包括接地层，磁性材料层和盖层的层压结构。接地层和盖层的材料彼此不同。磁性材料层具有：具有垂直磁各向异性的无磁化区; 以及位于第一平面内部方向上的无磁化区域的两侧上的第一特征变化区域和第二特征变化区域。第一和第二特征变化区的垂直磁各向异性弱于无磁化区的磁各向异性。将包含第一平面内部方向的分量的外部磁场施加到无磁化区域。此外，第一平面内侧的电流被供给到无磁化区域。

7. 发明专利

JP2013069906A Magnetic memory 有权
标题翻译：磁记忆
公开(公告)号：JP2013069906A
公开(公告)日：2013-04-18
申请号：JP2011207927
申请日：2011-09-22
申请人： Renesas Electronics Corp , ルネサスエレクトロニクス株式会社
发明人： SUEMITSU KATSUMI , KARIYADA HIDETSUGU
IPC分类号： H01L21/8246 , H01L27/105 , H01L29/82 , H01L43/08
CPC分类号： H01L43/12 , G11C11/161 , G11C11/1655 , G11C11/1659 , G11C11/1673 , G11C11/1675 , H01L27/226 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To provide a magnetic memory in which a ferromagnetic film of a magnetic storage layer has perpendicular magnetic anisotropy.SOLUTION: A magnetic memory comprises: an underlayer 51 of a ferromagnet; a first non-magnetism 52 on the underlayer 51; a data storage layer 53 of a ferromagnet having perpendicular magnetic anisotropy, which is provided on the first non-magnetism 52; a reference layer 30 connected to the data storage layer 53 via a second non-magnetic layer 20; and first and second magnetization fixed layers 41a, 41b contacting an under side of the underlayer 51. The data storage layer 53 comprises: a magnetization free region 13 having reversible magnetization and overlapping the reference layer 30; a first magnetization fixed region 11a connected to an end of the magnetization free region 13 and having magnetization fixed to the first magnetization fixed layer 41a in a +z direction; and a second magnetization fixed region 11b connected to another end of the magnetization free region 13 and having magnetization fixed to the second magnetization fixed layer 41b in a -z direction. The first non-magnetism under the magnetization free region 13 is thicker than the first non-magnetism under each of the first and second magnetization fixed regions 11a, 11b.
摘要翻译：要解决的问题：提供磁存储器，其中磁存储层的铁磁膜具有垂直的磁各向异性。解决方案：磁存储器包括：铁磁体的底层51; 底层51上的第一非磁性52; 设置在第一非磁性52上的具有垂直磁各向异性的铁磁体的数据存储层53; 经由第二非磁性层20连接到数据存储层53的参考层30; 以及与底层51的下侧接触的第一和第二磁化固定层41a，41b。数据存储层53包括：具有可逆磁化并与参考层30重叠的无磁化区13; 第一磁化固定区域11a，连接到磁化自由区域13的端部，并且具有在+ z方向上固定到第一磁化固定层41a的磁化强度; 以及第二磁化固定区域11b，其连接到磁化自由区域13的另一端，并且具有以-z方向固定到第二磁化固定层41b的磁化。在无磁化区域13之下的第一非磁性比第一和第二磁化固定区域11a，11b下的第一非磁性厚。版权所有（C）2013，JPO＆INPIT

8. 发明专利

JP2014239209A 半導体装置审中-公开
标题翻译：半导体器件
公开(公告)号：JP2014239209A
公开(公告)日：2014-12-18
申请号：JP2014068888
申请日：2014-03-28
申请人：ルネサスエレクトロニクス株式会社 , Renesas Electronics Corp
发明人： SUEMITSU KATSUMI , KARIYADA HIDETSUGU , MORI KAORU
IPC分类号： H01L21/8246 , H01L27/105 , H01L43/08 , H01L43/10
摘要：【課題】良好な歩留まりを実現することが可能な半導体装置を提供する。【解決手段】半導体装置は、互いに平面方向に離間して設けられた一対の第1磁化固定層FF1と、平面視において一対の第1磁化固定層FF1それぞれの一部と重なり、かつ一対の第1磁化固定層FF1と電気的に接続している磁化自由層FR1と、磁化自由層FR1上に設けられた非磁性層TB1と、非磁性層TB1上に設けられた第2磁化固定層RF1と、を備える。磁化自由層FR1、非磁性層TB1、および第2磁化固定層RF1は、互いに同一の平面形状を有している。【選択図】図1
摘要翻译：要解决的问题：提供可以获得良好产量的半导体器件。解决方案：一种半导体器件包括：在平面方向上彼此分离布置的一对第一磁化固定层FF1; 磁化自由层FR1，其在平面图中与一对第一磁化固定层FF1的一部分重叠，并且与一对第一磁化固定层FF1电连接; 布置在磁化自由层FR1上的非磁化层TB1; 以及布置在非磁化层TB1上的第二磁化固定层RF1。无磁化层FR1，非磁化层TB1和第二磁化固定层RF1具有相同的平面形状。

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