专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JP4974474B2 Semiconductor device and a method of manufacturing the same 有权
公开(公告)号：JP4974474B2
公开(公告)日：2012-07-11
申请号：JP2005125243
申请日：2005-04-22
申请人：ルネサスエレクトロニクス株式会社
发明人：孝行五十嵐 , 哲也新田
IPC分类号： H01L21/762 , H01L21/265 , H01L21/329 , H01L21/331 , H01L21/336 , H01L21/4763 , H01L21/76 , H01L21/761 , H01L21/8238 , H01L21/8247 , H01L27/092 , H01L27/115 , H01L29/06 , H01L29/08 , H01L29/10 , H01L29/423 , H01L29/73 , H01L29/732 , H01L29/78 , H01L29/786 , H01L29/788 , H01L29/792 , H01L29/861 , H01L29/868
CPC分类号： H01L29/0684 , H01L21/26586 , H01L21/761 , H01L21/76281 , H01L21/76283 , H01L29/0692 , H01L29/0847 , H01L29/1095 , H01L29/42368 , H01L29/7317 , H01L29/7824 , H01L29/7835 , H01L29/7881 , H01L29/8611
摘要： An N- layer is formed on a semiconductor substrate, with a BOX layer interposed. In the N- layer, a trench isolation region is formed to surround the N- layer to be an element forming region. The trench isolation region is formed to reach the BOX layer, from the surface of the N- layer. Between trench isolation region and the N- layer, a P type diffusion region 10 a is formed. The P type diffusion region is formed continuously without any interruption, to be in contact with the entire surface of an inner sidewall of the trench isolation region surrounding the element forming region. In the element forming region of the N- layer, a prescribed semiconductor element is formed. Thus, a semiconductor device is formed, in which electrical isolation is established reliably, without increasing the area occupied by the element forming region.

2. 发明专利

JP4959140B2 Semiconductor device 有权
公开(公告)号：JP4959140B2
公开(公告)日：2012-06-20
申请号：JP2005028374
申请日：2005-02-04
申请人：株式会社日立製作所 , 株式会社日立超エル・エス・アイ・システムズ
发明人：真一郎和田 , 満新井 , 秀顕野並
IPC分类号： H01L29/732 , H01L21/331 , H01L21/822 , H01L21/8222 , H01L27/04 , H01L27/082
CPC分类号： H01L27/1203 , H01L21/84 , H01L29/0692 , H01L29/7317

4. 发明专利

JP4102434B2 Breakdown voltage enhancement bipolar transistor soi 失效
公开(公告)号：JP4102434B2
公开(公告)日：2008-06-18
申请号：JP53095296
申请日：1996-04-09
申请人：インフィネオンテクノロジーズアクチェンゲゼルシャフト
发明人：アルンボルグ，トルケル , リトウィン，アンドレイ
IPC分类号： H01L21/331 , H01L29/73 , H01L29/732
CPC分类号： H01L29/7317

5. 发明专利

JP2005252789A Circuit system 有权
标题翻译：电路系统
公开(公告)号：JP2005252789A
公开(公告)日：2005-09-15
申请号：JP2004062149
申请日：2004-03-05
申请人： Denso Corp , 株式会社デンソー
发明人： SOFUE SATOSHI , YAMAMOTO TOMOHISA
IPC分类号： H01L27/04 , B60L11/12 , B60R16/02 , H01L21/822 , H02J7/00 , H03K17/10
CPC分类号： H02J7/0026 , H01L27/1203 , H01L29/7317 , H02J7/0029 , Y02T10/7055
摘要： PROBLEM TO BE SOLVED: To provide a circuit system for transmitting a signal between circuits, operated with different reference voltages without having to electrically insulate it. SOLUTION: In a battery ECU 22, a cell block monitoring unit 25 is provided to each cell block 24 of a main engine battery 18 of HEV 11, in which two or more unit cells 23 are connected in series, and a control unit 26 carries out charging and discharging control or the like, based on a signal generated from the cell block monitoring units 25. In this case, a transistor 39 is turned on by the generated signal to transmit a signal to a cell block 24(2) on the low voltage side. On the side of the cell block 24(2), a transistor 49 is turned on by the transmitted signal, to transmit a signal to a cell block 24(1) on the low voltage side. On the side of cell block 24(1), a transistor 53 is turned on by the transmitted signal, to generate a signal as an output to a control unit 26. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种用于在电路之间传输信号的电路系统，以不同的参考电压工作，而不必将其电绝缘。解决方案：在电池ECU22中，单元块监视单元25被提供给HEV11的主电池18的每个单元块24，其中两个或多个单元电池23串联连接，并且控制单元26基于从单元块监视单元25生成的信号进行充放电控制等。在这种情况下，通过产生的信号使晶体管39导通，将信号发送到单元块24（2 ）在低压侧。在单元块24（2）侧，通过发送信号使晶体管49导通，将信号发送到低压侧的单元块24（1）。在单元块24（1）的一侧，晶体管53被发送的信号导通，以产生作为控制单元26的输出的信号。（C）2005年，JPO和NCIPI

6. 发明专利

JP2005522037A Nanowires and electronic devices 有权
公开(公告)号：JP2005522037A
公开(公告)日：2005-07-21
申请号：JP2003581266
申请日：2003-03-27
申请人：コーニンクレッカフィリップスエレクトロニクスエヌヴィKoninklijke Philips Electronics N.V.
发明人：エリクピーエイエムバッケルス
IPC分类号： B82B1/00 , B82B3/00 , H01L21/203 , H01L29/06 , H01L29/73 , H01L29/786 , H01L33/06
CPC分类号： H01L29/0665 , B82Y10/00 , H01L21/02381 , H01L21/02532 , H01L21/02543 , H01L21/02603 , H01L21/0262 , H01L21/02631 , H01L21/02653 , H01L29/0673 , H01L29/0676 , H01L29/068 , H01L29/73 , H01L29/7317 , H01L29/78696 , H01L33/06
摘要： The nanowire ( 10 ) comprises a first region ( 1 ), a second region ( 2 ), and a third region ( 3 ), wherein the diameter (c) of the second region ( 2 ) is greater than the diameters (a) of the first and the third region ( 1, 3 ), therewith interrupting at least partially the quantization of the nanowire ( 10 ) and giving the second region a smaller bandgap. The second region ( 2 ) has a length (b) in axial direction of less than 100 nm, preferably less than 20 nm. The nanowire ( 10 ) can be used in an (opto-)electronic device having electrodes as a quantum dot, a single-electron transistor, or the like.

7. 发明专利

JP3651901B2 Method of manufacturing a lateral bipolar transistor 失效
公开(公告)号：JP3651901B2
公开(公告)日：2005-05-25
申请号：JP51644796
申请日：1995-11-21
申请人：シーメンスアクチエンゲゼルシヤフト
发明人：ケルバー、マルチン
IPC分类号： H01L21/331 , H01L29/45 , H01L29/73
CPC分类号： H01L29/7317 , H01L29/456 , Y10S257/915

8. 发明专利

JPS5759380A Thin film type thyristor 失效
标题翻译：薄膜类型THYRISTOR
公开(公告)号：JPS5759380A
公开(公告)日：1982-04-09
申请号：JP13402680
申请日：1980-09-26
申请人： Ricoh Co Ltd
发明人： SONE KIYOSHI , MORI KOUJI , ITAGAKI MASAKUNI , SAKURAI KOUICHI , SEGAWA HIDEO
IPC分类号： H01L27/12 , H01L21/33 , H01L27/08 , H01L29/70 , H01L29/73 , H01L29/74
CPC分类号： H01L29/7317 , H01L27/0817
摘要： PURPOSE:To obtain a highly reliable thyristor which is readily manufactured in an arbitrary configuration by providing a p-n-p type thin film semicondudtor layer and an n-p-n type thin film semiconductor layer on the same insulating substrate, and forming a connecting part between both layers. CONSTITUTION:Metallic electrodes 4 and 5 are embedded in the insulating substrate 3 as lead electrodes for an input terminal 6 and an output terminal 7, respectively. Then, a p type semiconductor film 8 comprising CdTe is layered on the metallic electrodes 4 to a thickness of 1-3mum, and an n type semiconductor film 9 comprising CdS is layered on the metallic electrode 5 to a thickness of 1-5mum. Then, SiO2 films 10a, 10b, and 10c are deposited. A metallic electrode 11 and a gate terminal 12 are formed on 10a. Furthermore, CdTe and CdS are alternately layered, and the p-n-p structure and the n-p-n structure are constituted. Finally a p type semiconductor film 16 and a p type semiconductor film 15 are connected by a metallic electrode 18, and the thin film thyristor is obtained.
摘要翻译：目的：通过在同一绝缘基板上设置p-n-p型薄膜半导体层和n-p-n型薄膜半导体层，并在两层之间形成连接部分，获得容易制成任意构造的高可靠性晶闸管。构成：金属电极4和5分别作为输入端子6和输出端子7的引线电极嵌入绝缘基板3中。然后，将包含CdTe的p型半导体膜8层叠在金属电极4上，厚度为1-3μm，将包含CdS的n型半导体膜9层叠在金属电极5上，厚度为1-5μm。然后，沉积SiO 2膜10a，10b和10c。金属电极11和栅极端子12形成在10a上。此外，CdTe和CdS交替层叠，构成p-n-p结构和n-p-n结构。最后，通过金属电极18连接p型半导体膜16和p型半导体膜15，获得薄膜晶闸管。

10. 发明专利

JP2008136336A Semiconductor integrated circuit device 有权
标题翻译：半导体集成电路设备
公开(公告)号：JP2008136336A
公开(公告)日：2008-06-12
申请号：JP2007166110
申请日：2007-06-25
申请人： Denso Corp , 株式会社デンソー
发明人： SOFUE SATOSHI
IPC分类号： H02J7/00 , G01R19/00 , H01M10/48 , H02J7/02
CPC分类号： H03K5/24 , B60L11/1853 , B60L2240/547 , G01R19/0084 , G01R31/3658 , H01L29/7317 , H01M10/482 , H02J7/0021 , Y02T10/7005 , Y02T10/705 , Y02T10/7055
摘要： PROBLEM TO BE SOLVED: To reduce the chip size and the current consumption of an article equipped with a cell voltage monitoring circuit of a battery pack.
SOLUTION: The semiconductor integrated circuit device comprises, through manufacturing in an insulation separation process, a cell voltage detecting circuit 13 for detecting a cell voltage VVi, by voltage-dividing, between a positive-side input terminal Ti and a negative-side input terminal Ti-1 for each of cells BCis (i=1, 2, 3, and 4), a reference voltage generating circuit 14 for generating a reference voltage Vr by inputting the cell voltage VVi; and a comparison circuit 15 which operates, by receiving a power supply from the positive-side input terminal Ti and the negative-side input terminal Ti-1 of the cell BCi, and compares the reference voltage Vr to a detection voltage vvi, acquired by voltage-dividing the cell voltage VVi.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：减少配备有电池组的电池电压监视电路的物品的芯片尺寸和电流消耗。解决方案：半导体集成电路器件包括通过在绝缘分离过程中制造的电池电压检测电路13，用于通过在正侧输入端子Ti和负极侧输入端子Ti之间进行分压来检测电池电压VVi，每个单元BCis（i = 1,2,3和4）的侧面输入端子Ti-1，用于通过输入单元电压VVi产生参考电压Vr的参考电压产生电路14; 以及比较电路15，其通过从单元BCi的正侧输入端子Ti和负侧输入端子Ti-1接收电源，并将参考电压Vr与由分压电池电压VVi。版权所有（C）2008，JPO＆INPIT

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式