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1. 发明专利

JPS617670A Photoelectric conversion film 失效
标题翻译：光电转换膜
公开(公告)号：JPS617670A
公开(公告)日：1986-01-14
申请号：JP12879384
申请日：1984-06-22
申请人： Ricoh Co Ltd
发明人： MORI KOUJI , ITAGAKI MASAKUNI
IPC分类号： H01L27/146 , H01L31/0248 , H01L31/09
CPC分类号： H01L31/09
摘要： PURPOSE:To attain high photoconductivity and fast optical response-speed simultaneously by arranging photoelectric conversion films having large band gaps to odd layers and disposing photoelectric conversion films having small band gaps to even layers in laminated structure. CONSTITUTION:Two layers or more of photoelectric conversion films 2 are laminated and formed onto an insulating substrate 1, and an electrode 3 is shaped onto the photoelectric conversion films 2. When odd layers are represented by (2n+1) layers 2a (where n=0, 1, 2,...) and even layers by second (n+1) layers 2b on counting from the direction of incidence of beams regarding the film 2 at that time, photoelectric conversion films having large band gaps are arranged to the layers 2a, and photoelectric conversion films having small band gaps are disposed to the layers 2b. According to the constitution, high photoconductivity is ensured by the layers 2a, and fast optical response-speed is seeured by the layers 2b. Consequently, high photoconductivity and fast optical response-speed are attained simultaneously.
摘要翻译：目的：通过将具有大带隙的光电转换膜布置成奇数层，并且将具有小带隙的光电转换膜设置成层叠结构的均匀层，同时实现高光电导率和快速光响应速度。构成：将两层以上的光电转换膜2层叠并形成在绝缘基板1上，并且将电极3成形为光电转换膜2.当奇数层由（2n + 1）层2a（其中n = 0,1,2，...），以及由第二（n + 1）层2b依次对来自关于膜2的光束的入射方向进行计数时，具有大带隙的光电转换膜布置成层2a和具有小带隙的光电转换膜设置在层2b上。根据构成，通过层2a确保高的光电导性，并且层2b看到快速的光学响应速度。因此，同时获得高的光电导率和快速的光学响应速度。

2. 发明专利

JPS57117282A Equally multiplying image sensor 失效
标题翻译：均匀的图像传感器
公开(公告)号：JPS57117282A
公开(公告)日：1982-07-21
申请号：JP352581
申请日：1981-01-13
申请人： Ricoh Co Ltd
发明人： SEGAWA HIDEO , ITAGAKI MASAKUNI , ISHIWATARI TATSUMI
IPC分类号： H01L27/146 , H01L31/11
CPC分类号： H01L31/1105
摘要： PURPOSE:To make a condensing optical device of lens, etc., to be unnecessitated and to contrive to form a device in a small type by a method wherein an equally multiplying image sensor is constituted using a thin film photo transistor. CONSTITUTION:A metal film electrode layer 3 consisting of an Ni-Cr film 2a and an Au film 2b, an N type CdTe or Cd film 4, a P type CdTe film 5, an N type CdS film 6, and a transparent electrode film 7 are laminated in order on a substrate 1, the non laminated part is provided at a corner of this laminated body, a transparent insulating film 13 is covered thereon, a metal layer 14 is connected on the non laminated part thereof, and a transparent abrasion resistive layer 8 is covered on the whole to constitute the thin film photo transistor 9. When signals are applied in order to the thin film photo transistor 9 at first, electric charge is stored in this transistor, and when light is irradiated thereon during one circulation of scanning, electric charge corresponding to irradiated light quantity is discharged. When signals are applied thereon next, electric charge corresponding to discharged quantity thereof is charged again, and quantity of recharging current to flow at that time is detected as the video signal.
摘要翻译：目的：通过使用薄膜光电晶体管构成均匀的图像传感器的方法，使透镜等的聚光光学装置不需要并且能够形成小型的装置。构成：由Ni-Cr膜2a和Au膜2b，N型CdTe或Cd膜4，P型CdTe膜5，N型CdS膜6和透明电极膜构成的金属膜电极层3 7在基板1上依次层叠，非层叠部设置在该层叠体的角部，透明绝缘膜13被覆盖，金属层14连接在非层叠部上，透明的磨损电阻层8整体被覆盖以构成薄膜光电晶体管9.当首先向薄膜光电晶体管9施加信号时，在该晶体管中存储电荷，并且当在一个循环中照射光时扫描时，对应于照射光量的电荷被排出。当其上施加信号时，对应于其放电量的电荷被再次充电，并且检测当时的充电电流量作为视频信号。

3. 发明专利

JPS5736679A Thermal head 失效
标题翻译：空值
公开(公告)号：JPS5736679A
公开(公告)日：1982-02-27
申请号：JP11129380
申请日：1980-08-13
申请人： Ricoh Co Ltd
发明人： UEHARA HIROSHI , SAKURAI KOICHI , ITAGAKI MASAKUNI , SUGANO OSAMU , OOTA MASATOSHI
IPC分类号： H01L49/00 , B41J2/345 , B41J2/35 , G06K15/10
CPC分类号： B41J2/35
摘要： PURPOSE:To obtain a thermal head that can be miniaturized, is improved in the efficiency of use of energy, and has a simple construction, by arraying on a base a plurality of diodes capable of heating by making an electric current forward. CONSTITUTION:m Blocks each including n diodes are arrayed. The blocks are respectively connected with block terminals A1, A2...Am, and ones of diodes in respective blocks are respectively connected with element terminals B1, B2...Bn to obtain the intended thermal head. In order to drive and control the thermal head, for example, MOS transistor switches Q1, Q2,...Qn constituting part of a control circuit are provided. In this case the diodes Cij (i=1-m; j=1-n) not only have a funtion as a blocking diode for preventing backward current, but also function as heating resistor for heating recording.
摘要翻译：目的：为了获得能够小型化的热敏头，能够提高能量的利用效率，并且通过使能够通过向前流动的电流而能够加热的多个二极管将基板排列在基座上，结构简单。构成：m包括n个二极管的块被排列。这些块分别与块端子A1，A2 ... Am连接，各块中的二极管分别与元件端子B1，B2 ... Bn连接，以获得预期的热头。为了驱动和控制热敏头，例如，提供构成控制电路的一部分的MOS晶体管开关Q1，Q2，... Qn。在这种情况下，二极管Cij（i = 1-m; j = 1-n）不仅具有作为阻止反向电流的阻塞二极管的功能，而且还用作用于加热记录的加热电阻器。

4. 发明专利

JPS6167916A Thin film manufacturing method 失效
标题翻译：薄膜制造方法
公开(公告)号：JPS6167916A
公开(公告)日：1986-04-08
申请号：JP18987084
申请日：1984-09-11
申请人： Ricoh Co Ltd
发明人： ISHIDA TSUTOMU , ITAGAKI MASAKUNI
IPC分类号： H01L31/04 , H01L21/205 , H01L31/0248
CPC分类号： H01L21/0262 , H01L21/02532
摘要： PURPOSE:To manufacture the thin film having improved accuracy in desired pattern by a method wherein a mask made of insulative material is used for the purpose of forming a film on a part of a substrate. CONSTITUTION:A mask 11 made of insulating material is formed on an aperture part 11 facing a substrate 4. Also, supporting jigs 12 are provided on the mask 11. At this point, soda glass, quartz, boron-silicate glass, ceramic, alumina and the like are used as the insulating material. By forming a film at a part only of the substrate 4 using the mask 11 made of insulating material, the characteristics of a thin film can be made almost uniform on the whole area. As a result, an unnecessary pattern is not generated when a pattering is performed, and a desired pattern of uniform film quality can be formed with excellent accuracy.
摘要翻译：目的：通过以绝缘材料制成的掩模为了在基板的一部分上形成薄膜而制造具有期望图案精度提高的薄膜。构成：在面向基板4的孔部11上形成由绝缘材料制成的掩模11.此外，在掩模11上设置支撑夹具12.此时，苏打玻璃，石英，硼硅酸盐玻璃，陶瓷，氧化铝等用作绝缘材料。通过使用由绝缘材料制成的掩模11在基板4的仅一部分处形成膜，可以在整个区域上使薄膜的特性几乎均匀。结果，当执行图案时不会产生不必要的图案，并且可以以高精度形成期望的均匀薄膜质量的图案。

5. 发明专利

JPS59204263A Photoelectric conversion device 失效
标题翻译：光电转换器件
公开(公告)号：JPS59204263A
公开(公告)日：1984-11-19
申请号：JP7821583
申请日：1983-05-06
申请人： Ricoh Co Ltd
发明人： ITAGAKI MASAKUNI
IPC分类号： H01L27/146 , H04N5/335 , H04N5/359 , H04N5/369 , H04N5/374
CPC分类号： H01L27/14665
摘要： PURPOSE:To take only a necessary area without the restriction of the light receiving surface by a signal processing circuit by forming the photoelectric conversion part and said circuit part on different planes. CONSTITUTION:Said conversion part 12 and said circuit part 13 have laminated structures on a substrate 2. The conversion part 12 consists of the upper electrode film 10, a photoelectric conversion film 9, the lower electrode film 8, and a junction part 11, which junction part 11 connects the electrode film 10 to the circuit part 13. A low resistant metallic material is desired for the junction part 11, which part is so formed as to fill a through hole formed in the insulation layer 7 of the circuit part 13 and overlap the electrode film 10.
摘要翻译：目的：通过在不同的平面上形成光电转换部分和电路部分，仅通过信号处理电路仅仅取得必要的区域而不受光接收表面的限制。构成：所述转换部12和电路部13在基板2上具有层叠结构。转换部12由上部电极膜10，光电转换膜9，下部电极膜8和接合部11构成，接合部分11将电极膜10连接到电路部分13.对于接合部分11需要低电阻金属材料，该部分形成为填充形成在电路部分13的绝缘层7中的通孔和与电极膜10重叠。

6. 发明专利

JPS58202662A Picture reading device 失效
标题翻译：图片阅读器
公开(公告)号：JPS58202662A
公开(公告)日：1983-11-25
申请号：JP8490282
申请日：1982-05-21
申请人： Ricoh Co Ltd
发明人： ISHIWATARI TATSUMI , MORI KOUJI , ITAGAKI MASAKUNI , YOSHIDA TAIZOU
IPC分类号： G06K7/00 , G06T1/00 , H04N1/04 , H04N1/19 , H04N1/401 , H04N1/403
CPC分类号： H04N1/04
摘要： PURPOSE:To obtain a correcting data for an optical sensor, by providing a white color diffusion plate at the position of an original and binary coding and then storing the reflected light given from the diffusing plate. CONSTITUTION:A white color diffusion plate 3 is provided at the reading position of pictures, and the beams are irradiated from light sources 5a and 5b. The reflected light is detected by a photosensor 10 and digitized by an A/D converter to be stored in a memory. The memory is provided by an amount equivalent to a main scanning line of the sensor 10. That is, the memory stores the data in response to the variance of the sensor 10. This data is used to compensate the picture signal when an original 4 is actually read. This correction is carried out by reading the data out of the memory in response to the scan equivalent to a line. As a result, the photosensitive variance is eliminated for each photodetecting element of the sensor 10. Thus it is possible to reproduce pictures of good quality.
摘要翻译：目的：通过在原始和二进制编码的位置提供白色扩散板，然后存储从扩散板给出的反射光，获得光学传感器的校正数据。构成：在图像的读取位置设置白色扩散板3，并且从光源5a和5b照射光束。反射光由光电传感器10检测并被A / D转换器数字化以存储在存储器中。存储器由与传感器10的主扫描线相当的量提供。也就是说，存储器响应于传感器10的方差来存储数据。当原稿4为原始图像时，该数据用于补偿图像信号实际读通过响应于等同于一行的扫描从存储器读出数据来进行该校正。结果，对于传感器10的每个光电元件消除了光敏方差。因此，可以再现高质量的图像。

7. 发明专利

JPS5752183A Manufacture of thin film transistor 失效
标题翻译：薄膜晶体管的制造
公开(公告)号：JPS5752183A
公开(公告)日：1982-03-27
申请号：JP12836080
申请日：1980-09-16
申请人： Ricoh Co Ltd
发明人： SEGAWA HIDEO , MORI KOUJI , ITAGAKI MASAKUNI
IPC分类号： H01L31/10 , H01L21/331 , H01L29/73 , H01L31/11
CPC分类号： H01L31/1105
摘要： PURPOSE:To form a thin film bipolar transistor having high stability, high reliability and high sensitivity by enabling the manufacture thereof of arbitrary shape with ready preparation by using CdTe film. CONSTITUTION:A transparent conductive film 2, e.g., In2O3 or the like is formed on a phototransmissive substrate 1, an N type CdS film or a semiconductor film 3 containing CdS is laminated as an emitter region, and a P type CdTe film or a semiconductor layer 4 containing CdTe is laminated as a base region. Then, a P type Cd film is deposited by sputtering method or vacuum deposition method on a P type CdTe film 4, is heat treated, and a semiconductor film 5 containing an N type CdTe film or CdTe as a collector region is formed. Thereafter, an electrode 6 made of gold or the like is deposited thereon. In this manner, a phototransistor having high sensitivity can be formed by the emission of light.
摘要翻译：目的：通过使用CdTe薄膜制备任意形状，形成具有高稳定性，高可靠性和高灵敏度的薄膜双极晶体管。构成：在光透射性基板1上形成透明导电膜2，例如In2O3等，层叠N型CdS膜或含有CdS的半导体膜3作为发射极区域，将P型CdTe膜或半导体层叠含有CdTe的层4作为基底区域。然后，通过溅射法或真空沉积法将P型Cd膜沉积在P型CdTe膜4上，进行热处理，形成含有N型CdTe膜或CdTe作为集电极区域的半导体膜5。此后，在其上沉积由金等制成的电极6。以这种方式，可以通过发射光来形成具有高灵敏度的光电晶体管。

8. 发明专利

JPS5752182A Thin film transistor 失效
标题翻译：薄膜晶体管
公开(公告)号：JPS5752182A
公开(公告)日：1982-03-27
申请号：JP12835980
申请日：1980-09-16
申请人： Ricoh Co Ltd
发明人： ISHIWATARI TATSUMI , ITAGAKI MASAKUNI , SAKURAI KOUICHI
IPC分类号： H01L31/10 , H01L21/331 , H01L29/73 , H01L31/11
CPC分类号： H01L31/1105
摘要： PURPOSE:To obtain a thin film type bipolar transistor having high stability, high reliability and high sensitivity by enabling to form an arbitrary shape with ready manufacture through the employment of CdTe film. CONSTITUTION:A transparent conductive film 2, e.g., In2O3 or the like is formed on a phototransmissive substrate 1, and an N type CdTe film 3 is laminated as an emitter region by a sputtering method or vacuum deposition method or the like. Then, P type CdTe film 4 and an N type CdTe film 5 are sequentially laminated in the same method on an N type CdTe film 3 as base and collector regions. Then, the electrode 6 made of gold or the like is deposited thereon. In this manner, a phototransistor of high sensitivity can be formed by the emission of the light.
摘要翻译：目的：通过使用CdTe膜，可以通过使用即将制造的任意形状获得具有高稳定性，高可靠性和高灵敏度的薄膜型双极晶体管。构成：在光透射性基板1上形成例如In 2 O 3等透明导电膜2，通过溅射法或真空蒸镀法等将N型CdTe膜3层叠成发射极区域。然后，在作为基极和集电极区域的N型CdTe膜3上，以相同的方法依次层叠P型CdTe膜4和N型CdTe膜5。然后，将由金等制成的电极6沉积在其上。以这种方式，可以通过发射光来形成高灵敏度的光电晶体管。

9. 发明专利

JPS59139682A Photoconductive thin film 失效
标题翻译：光电薄膜
公开(公告)号：JPS59139682A
公开(公告)日：1984-08-10
申请号：JP1278683
申请日：1983-01-31
申请人： Ricoh Co Ltd
发明人： ITAGAKI MASAKUNI , TAKAHASHI JIYUNICHI
IPC分类号： H01L27/146 , H01L31/0248 , H01L31/0392 , H01L31/09
CPC分类号： H01L31/095 , H01L31/03921 , Y02E10/50
摘要： PURPOSE:To obtain a photoconducting thin film having a large photocurrent and a favorable sensitivity to light by a method wherein an amorphous hydrogenated silicon layer with a large optical absorption coefficient and a microcrystalline hydrogenated silicon layer with a comparatively larger carrier mobility are alternately laminated one upon another. CONSTITUTION:A photoconducting thin film consists of an a-Si: H layer 2 and a muc-Si: H layer 3, which have been successively laminated on an insulating substrate 1. Ceramics, glass and the like are used as material for the insulating substrate 1 and the formation of the a-Si: H film 2 according to a plasma CVD method is obtained by the low-pressure glow discharge decomposition of SiH4, for example. For the production of raw gas, SiH4 diluted by H2, Ar, N2, He and the like can be also used in addition to an SiH4 single substance, and for the formation of the muc-Si: H film 3 according to a plasma CVD method, ones among the usual forming conditions of the a-Si: H film, a substrate temperature, electric power which is inputted and the flow rate of gas, are made to increase respectively, and moreover, it is desirable to make the concentration of hydrogen to be contained in raw gas higher. Besides, the film thicknesses of the a- Si: H and the muc-Si: H shall be respectively the degrees of 1,000Angstrom or less and the film thickness of the whole to be formed after they were laminated shall be about 1mum or less.
摘要翻译：目的：通过将具有较大光吸收系数的非晶氢化硅层和具有较大载流子迁移率的微晶氢化硅层交替层叠在一起的方法获得具有大光电流和对光的良好感光度的光导薄膜另一个。构成：光导薄膜由已经相继层压在绝缘基片1上的a-Si：H层2和粘-Si：H层3组成。陶瓷，玻璃等用作绝缘材料通过例如SiH 4的低压辉光放电分解，可以得到等离子体CVD法形成基板1，形成a-Si：H膜2。对于原料气体的制造，除了SiH4单一物质之外，还可以使用由H 2，Ar，N 2，He等稀释的SiH 4，并且根据等离子体CVD形成粘膜-Si：H膜3 方法，a-Si：H膜的通常形成条件之一，基板温度，输入的电力和气体的流量分别增加，此外，希望使浓度原料气中含有的氢气较高。此外，a-Si：H和粘膜-Si：H的膜厚度分别为1,000Ang以下的程度，层叠后的整体膜厚为1μm以下。

10. 发明专利

JPS5759380A Thin film type thyristor 失效
标题翻译：薄膜类型THYRISTOR
公开(公告)号：JPS5759380A
公开(公告)日：1982-04-09
申请号：JP13402680
申请日：1980-09-26
申请人： Ricoh Co Ltd
发明人： SONE KIYOSHI , MORI KOUJI , ITAGAKI MASAKUNI , SAKURAI KOUICHI , SEGAWA HIDEO
IPC分类号： H01L27/12 , H01L21/33 , H01L27/08 , H01L29/70 , H01L29/73 , H01L29/74
CPC分类号： H01L29/7317 , H01L27/0817
摘要： PURPOSE:To obtain a highly reliable thyristor which is readily manufactured in an arbitrary configuration by providing a p-n-p type thin film semicondudtor layer and an n-p-n type thin film semiconductor layer on the same insulating substrate, and forming a connecting part between both layers. CONSTITUTION:Metallic electrodes 4 and 5 are embedded in the insulating substrate 3 as lead electrodes for an input terminal 6 and an output terminal 7, respectively. Then, a p type semiconductor film 8 comprising CdTe is layered on the metallic electrodes 4 to a thickness of 1-3mum, and an n type semiconductor film 9 comprising CdS is layered on the metallic electrode 5 to a thickness of 1-5mum. Then, SiO2 films 10a, 10b, and 10c are deposited. A metallic electrode 11 and a gate terminal 12 are formed on 10a. Furthermore, CdTe and CdS are alternately layered, and the p-n-p structure and the n-p-n structure are constituted. Finally a p type semiconductor film 16 and a p type semiconductor film 15 are connected by a metallic electrode 18, and the thin film thyristor is obtained.
摘要翻译：目的：通过在同一绝缘基板上设置p-n-p型薄膜半导体层和n-p-n型薄膜半导体层，并在两层之间形成连接部分，获得容易制成任意构造的高可靠性晶闸管。构成：金属电极4和5分别作为输入端子6和输出端子7的引线电极嵌入绝缘基板3中。然后，将包含CdTe的p型半导体膜8层叠在金属电极4上，厚度为1-3μm，将包含CdS的n型半导体膜9层叠在金属电极5上，厚度为1-5μm。然后，沉积SiO 2膜10a，10b和10c。金属电极11和栅极端子12形成在10a上。此外，CdTe和CdS交替层叠，构成p-n-p结构和n-p-n结构。最后，通过金属电极18连接p型半导体膜16和p型半导体膜15，获得薄膜晶闸管。

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