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3. 发明专利

JP2012198295A Manufacturing method for optical module 有权
标题翻译：光学模块的制造方法
公开(公告)号：JP2012198295A
公开(公告)日：2012-10-18
申请号：JP2011060916
申请日：2011-03-18
申请人： Citizen Holdings Co Ltd , シチズンホールディングス株式会社
发明人： YODA KAORU
IPC分类号： G02B6/42 , G02F1/377 , H01S5/022
CPC分类号： H01L24/83 , H01L24/32 , H01L2224/29019 , H01L2224/29111 , H01L2224/2919 , H01L2224/32059 , H01L2224/32238 , H01L2224/7592 , H01L2224/81192 , H01L2224/81444 , H01L2224/81895 , H01L2224/83099 , H01L2224/83193 , H01L2224/83208 , H01L2224/83385 , H01L2224/83444 , H01L2224/83895 , H01L2924/01005 , H01L2924/01006 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01075 , H01L2924/01079 , H01L2924/0132 , H01L2924/014 , H01L2924/12042 , H01L2924/12043 , Y10T156/1039 , H01L2924/0105 , H01L2924/00014 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method for an optical module that enables positioning optically with high accuracy between optical elements regardless of elastic return of joining bumps.SOLUTION: A manufacturing method for an optical module (1) includes the steps of: forming joining bumps (19) made up of metal on a substrate (10); and, after such a load is applied so that the joining bumps (19) deform by a prescribed amount (F) further than the position at which a first optical element (20) and a second optical element (30) are optically coupled most efficiently, releasing the load and joining the second optical element on the joining bumps.
摘要翻译：要解决的问题：提供一种光学模块的制造方法，其能够在光学元件之间以高精度进行光学定位，而与接合凸块的弹性返回无关。光学模块（1）的制造方法包括以下步骤：在基板（10）上形成由金属构成的接合凸块（19）; 并且在施加这样的负载之后，使得接合凸块（19）比第一光学元件（20）和第二光学元件（30）最有效耦合的位置更大的规定量（F）变形释放负载并将第二光学元件接合在接合凸块上。版权所有（C）2013，JPO＆INPIT

4. 发明专利

JP2012156514A Three dimensional device integration method and integrated device 有权
标题翻译：三维设备集成方法和集成设备
公开(公告)号：JP2012156514A
公开(公告)日：2012-08-16
申请号：JP2012043454
申请日：2012-02-29
申请人： Ziptronix Inc , ジプトロニクス・インコーポレイテッド
发明人： PAUL M ENQUIST
IPC分类号： H01L21/331 , H01L21/8238 , H01L21/02 , H01L21/20 , H01L21/60 , H01L21/768 , H01L21/822 , H01L21/8234 , H01L21/98 , H01L27/00 , H01L27/04 , H01L27/088 , H01L27/092 , H01L29/737
CPC分类号： H01L24/08 , H01L21/187 , H01L21/2007 , H01L21/6835 , H01L21/76251 , H01L21/76898 , H01L21/8221 , H01L23/13 , H01L23/36 , H01L23/481 , H01L23/5384 , H01L23/5385 , H01L23/5389 , H01L23/552 , H01L24/24 , H01L24/26 , H01L24/27 , H01L24/30 , H01L24/48 , H01L24/80 , H01L24/82 , H01L24/83 , H01L24/94 , H01L25/0652 , H01L25/0655 , H01L25/0657 , H01L25/16 , H01L25/167 , H01L25/18 , H01L25/50 , H01L27/0688 , H01L27/14634 , H01L2221/6835 , H01L2221/68359 , H01L2221/68363 , H01L2223/6677 , H01L2224/0807 , H01L2224/08123 , H01L2224/1134 , H01L2224/16 , H01L2224/24011 , H01L2224/24225 , H01L2224/24226 , H01L2224/24227 , H01L2224/3005 , H01L2224/30104 , H01L2224/305 , H01L2224/48091 , H01L2224/48101 , H01L2224/48227 , H01L2224/48247 , H01L2224/80896 , H01L2224/81894 , H01L2224/8303 , H01L2224/83092 , H01L2224/83099 , H01L2224/8319 , H01L2224/83193 , H01L2224/83345 , H01L2224/83359 , H01L2224/8385 , H01L2224/83894 , H01L2224/83896 , H01L2224/83912 , H01L2224/83948 , H01L2224/9202 , H01L2224/9212 , H01L2225/06513 , H01L2225/06524 , H01L2225/06541 , H01L2225/06555 , H01L2225/06589 , H01L2924/00013 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01015 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01057 , H01L2924/01074 , H01L2924/01082 , H01L2924/0132 , H01L2924/014 , H01L2924/05442 , H01L2924/07802 , H01L2924/10253 , H01L2924/10329 , H01L2924/1305 , H01L2924/13062 , H01L2924/13063 , H01L2924/13064 , H01L2924/13091 , H01L2924/14 , H01L2924/1461 , H01L2924/15153 , H01L2924/15165 , H01L2924/19041 , H01L2924/19043 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , H01L2924/3025 , H01L2924/351 , Y10S148/012 , Y10S438/977 , H01L2224/13099 , H01L2924/01049 , H01L2924/01031 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207 , H01L2224/8203 , H01L2224/821 , H01L2224/80001 , H01L2224/82
摘要： PROBLEM TO BE SOLVED: To provide a device having high integration density and a device integration method.SOLUTION: Surfaces of first and second workpieces are each polished to a surface roughness of about 5 to 10Å. The polished surfaces of the first and second workpieces are bonded together. A surface of a third workpiece is polished to the surface roughness. The surface of the third workpiece is bonded to the joined first and second workpieces. The first, second and third workpieces may each be a semiconductor device having a thin material formed on one surface, preferably in wafer form. The thin materials are polished to the desired surface roughness and then bonded together. The thin materials may each have a thickness of approximately 1 to 10 times the surface non-planarity of the material on which they are formed. A number of devices may be bonded together, and the devices may be different types of devices or different technologies.
摘要翻译：要解决的问题：提供具有高集成度的器件和器件集成方法。解决方案：将第一和第二工件的表面抛光至约5至10埃的表面粗糙度。第一和第二工件的抛光表面粘合在一起。将第三工件的表面抛光至表面粗糙度。第三工件的表面被接合到接合的第一和第二工件上。第一，第二和第三工件可以各自是具有在一个表面上形成的薄材料，优选以晶片形式形成的半导体器件。将薄的材料抛光至所需的表面粗糙度，然后粘结在一起。薄材料可以各自具有其形成它们的材料的表面非平面度的约1至10倍的厚度。多个设备可以结合在一起，并且设备可以是不同类型的设备或不同的技术。版权所有（C）2012，JPO＆INPIT

5. 发明专利

JP2012503321A Method and system for material bonding 有权
公开(公告)号：JP2012503321A
公开(公告)日：2012-02-02
申请号：JP2011527336
申请日：2009-09-18
申请人：アイメックImec
发明人：エリック・ベイネ , チャン・ウェンキ
IPC分类号： H01L21/60
CPC分类号： H01L25/50 , H01L24/13 , H01L24/32 , H01L24/81 , H01L24/83 , H01L24/91 , H01L25/0657 , H01L2224/13 , H01L2224/13099 , H01L2224/131 , H01L2224/291 , H01L2224/29111 , H01L2224/32507 , H01L2224/81203 , H01L2224/81208 , H01L2224/81801 , H01L2224/81894 , H01L2224/83099 , H01L2224/83801 , H01L2224/83894 , H01L2224/9211 , H01L2225/06513 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01023 , H01L2924/01027 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01046 , H01L2924/01049 , H01L2924/0105 , H01L2924/01075 , H01L2924/01079 , H01L2924/0132 , H01L2924/01327 , H01L2924/014 , H01L2924/07802 , H01L2924/10253 , H01L2924/10329 , H01L2924/14 , H01L2924/1461 , H01L2924/30105 , H01L2924/3512 , H01L2924/00 , H01L2924/00014
摘要：例えば異なる基板（１、４）の上の導電性材料（２、５）の間に、低温および低圧で、信頼性のある電気的接続を実現するためのデバイスおよび方法が開示される。一の形態では、粗くて壊れやすい金属間層（３）が、第１基板（１）の上の導電性材料（２）の上に形成される。他の基板（４）の上の柔らかい半田材料層（６）は、破壊される、壊れやすく粗い金属間層（３）と接触するために使用される。半田材料（６）は比較的柔らかいため、破壊された金属間層（３）と半田材料（６）との間の接続が、表面領域の大きな部分で実現できる。この段階で、第２金属間層（７）が半田材料（６）と第１金属間層（３）との間に形成され、電気的接続を実現する。

6. 发明专利

JP2008141035A Method of manufacturing semiconductor device and adhesive for use in its method 有权
标题翻译：制造半导体器件和粘合剂的方法用于其方法
公开(公告)号：JP2008141035A
公开(公告)日：2008-06-19
申请号：JP2006326672
申请日：2006-12-04
申请人： Fujitsu Ltd , 富士通株式会社
发明人： NAKAGAWA MASASHI , IMAIZUMI NOBUHIRO , ISHIZUKA TAKESHI , DATE HITOAKI
IPC分类号： H01L21/60
CPC分类号： H01L24/83 , H01L24/29 , H01L24/32 , H01L24/81 , H01L24/91 , H01L2224/16225 , H01L2224/16227 , H01L2224/2929 , H01L2224/29394 , H01L2224/2949 , H01L2224/81193 , H01L2224/83099 , H01L2224/83193 , H01L2224/83855 , H01L2924/01079 , H01L2924/15787 , H01L2924/351 , H01L2924/0665 , H01L2924/00012 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device in which the excellent bonding of a semiconductor chip and a circuit wiring board can be obtained by promoting the curing reaction of an epoxy resin at an ordinary temperature (without allowing the epoxy resin to be heated) when the semiconductor chip is mounted to the circuit wiring board by flip-chip bonding, and an adhesive for use in the method. SOLUTION: The method of manufacturing a semiconductor device comprises a first application step of applying a first composition containing epoxy resin, an epoxy resin curing agent covered with a capsule film, and a monomer which can be radically polymerized to the electrode forming surface of a circuit wiring board, a second step of applying a second composition containing a radical polymerization starting agent to the electrode forming surface of a semiconductor chip, a contact step of allowing the electrode forming surface of the semiconductor chip and the electrode forming surface of the circuit wiring board to face each other and allowing the first composition applied and the second composition applied to be in contact with each other, and the epoxy resin curing step of curing the epoxy resin. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：解决的问题：提供一种制造半导体器件的方法，其中通过促进环氧树脂在常温下的固化反应（不允许）可以获得半导体芯片和电路布线板的良好接合当半导体芯片通过倒装芯片接合安装到电路布线板上时，待加热的环氧树脂）和用于该方法的粘合剂。解决方案：制造半导体器件的方法包括：第一施加步骤，施加含有环氧树脂的第一组合物，被胶囊膜覆盖的环氧树脂固化剂和可以自发聚合成电极形成表面的单体电路布线板的第二步骤，将含有自由基聚合起始剂的第二组合物施加到半导体芯片的电极形成表面的第二步骤，允许半导体芯片的电极形成表面和电极形成表面的接触步骤电路布线板彼此面对并允许施加的第一组合物和施加的第二组合物彼此接触，并且环氧树脂固化步骤使环氧树脂固化。版权所有（C）2008，JPO＆INPIT

7. 发明专利

JP5845775B2 薄膜個片の接合方法有权
标题翻译：接合薄膜片方法
公开(公告)号：JP5845775B2
公开(公告)日：2016-01-20
申请号：JP2011209773
申请日：2011-09-26
申请人：住友電気工業株式会社
发明人：古谷章
IPC分类号： H01L21/02
CPC分类号： B44C1/1733 , B29C33/52 , B32B37/12 , B32B38/10 , B32B43/006 , B44C1/175 , C08J5/122 , H01L21/6835 , H01L24/83 , H01L24/95 , H01L2221/68354 , H01L2221/68363 , H01L2221/68368 , H01L2221/68381 , H01L2224/83002 , H01L2224/83005 , H01L2224/83099 , H01L2224/83203 , H01L2224/83894 , H01L2924/04642 , H01L2924/1032 , H01L2924/12042 , H01L2924/1306 , H01L2924/13064 , Y10T156/1116

9. 发明专利

JP2009054747A Semiconductor device and its manufacturing method 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2009054747A
公开(公告)日：2009-03-12
申请号：JP2007219278
申请日：2007-08-27
申请人： Fujitsu Microelectronics Ltd , 富士通マイクロエレクトロニクス株式会社
发明人： NISHIMURA TAKAO
IPC分类号： H01L25/065 , H01L21/60 , H01L23/12 , H01L23/28 , H01L25/07 , H01L25/18
CPC分类号： H01L25/0657 , H01L21/565 , H01L23/3128 , H01L23/49575 , H01L24/05 , H01L24/06 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/743 , H01L24/75 , H01L24/78 , H01L24/81 , H01L24/83 , H01L24/85 , H01L24/92 , H01L2224/0401 , H01L2224/04042 , H01L2224/05553 , H01L2224/05554 , H01L2224/05556 , H01L2224/06136 , H01L2224/1134 , H01L2224/1308 , H01L2224/13144 , H01L2224/16225 , H01L2224/29111 , H01L2224/2919 , H01L2224/32145 , H01L2224/32225 , H01L2224/32245 , H01L2224/45015 , H01L2224/45124 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48465 , H01L2224/48471 , H01L2224/48479 , H01L2224/48599 , H01L2224/48699 , H01L2224/48799 , H01L2224/49171 , H01L2224/4943 , H01L2224/4945 , H01L2224/73204 , H01L2224/73257 , H01L2224/73265 , H01L2224/78301 , H01L2224/81203 , H01L2224/81801 , H01L2224/83099 , H01L2224/8314 , H01L2224/83191 , H01L2224/83192 , H01L2224/83444 , H01L2224/83455 , H01L2224/8385 , H01L2224/85045 , H01L2224/85051 , H01L2224/85181 , H01L2224/85191 , H01L2224/85203 , H01L2224/85205 , H01L2224/85951 , H01L2224/85986 , H01L2224/92247 , H01L2225/0651 , H01L2225/06555 , H01L2225/06562 , H01L2225/06575 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01028 , H01L2924/01029 , H01L2924/01031 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/0133 , H01L2924/014 , H01L2924/0665 , H01L2924/07802 , H01L2924/09701 , H01L2924/10161 , H01L2924/10329 , H01L2924/12041 , H01L2924/14 , H01L2924/15311 , H01L2924/15787 , H01L2924/15788 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/20751 , H01L2924/20752 , H01L2924/30107 , H01L2224/85186 , H01L2924/07025 , H01L2924/00 , H01L2924/3512 , H01L2924/0695 , H01L2924/00012 , H01L2224/4554
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device for inhibiting a warp from occurring when wire-bonding on a protrusion of a semiconductor element to be laminated and having a carrying member not to upsize the semiconductor device, and also to provide its manufacturing method. SOLUTION: The semiconductor device to solve the problem includes: a supporting base having an electrode terminal provided; an intermediate member mounted on the supporting base; a semiconductor element partially supported by the intermediate member and provided on the supporting base; and a protruding member provided on the supporting base or the intermediate member corresponding to an electrode terminal of the semiconductor element. The electrode terminal of the semiconductor element and the electrode terminal on the supporting base are connected via a bonding wire. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种半导体器件，用于抑制在要层压并具有承载构件的半导体元件的突起上引线接合时不发生翘曲而不使半导体器件升高的半导体器件，并且还提供其制造方法。解决方案：解决该问题的半导体器件包括：具有电极端子的支撑基座; 安装在所述支撑基座上的中间构件; 由所述中间部件部分地支撑并设置在所述支撑基座上的半导体元件; 以及设置在与半导体元件的电极端子对应的支撑基座或中间构件上的突出构件。半导体元件的电极端子和支撑基座上的电极端子经由接合线连接。版权所有（C）2009，JPO＆INPIT

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