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1. 发明专利

JP2006093551A Method of forming titanium content film 审中-公开
标题翻译：形成钛内容膜的方法
公开(公告)号：JP2006093551A
公开(公告)日：2006-04-06
申请号：JP2004279364
申请日：2004-09-27
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： ZAMA HIDEAKI , WATABE MIKIO
IPC分类号： H01L21/285 , C23C16/18 , H01L21/28
摘要： PROBLEM TO BE SOLVED: To provide a method of forming a titanium content film as a base layer having a sufficient characteristic by a CVD method. SOLUTION: The titanium content film is formed by the CVD method by using metal material gas and reducing gas such as TDEAT or TDMAT. Reducing gas deviates, can discharge H * radicals and H + ions, and is selected from tertiary butyl hydrazine, NH 3 and H 2 , for example. Reaction of metal material gas and reducing gas is performed in a temperature region where film forming speed depends on a substrate temperature. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供通过CVD法形成具有足够特性的钛含量膜作为基底层的方法。解决方案：通过使用金属材料气体和还原气体如TDEAT或TDMAT，通过CVD法形成钛含量膜。减少气体偏离，可以排出H * 离子和H + 离子，选自叔丁基肼，NH 3 和H 2 。在成膜速度取决于基板温度的温度区域中进行金属材料气体和还原气体的反应。版权所有（C）2006，JPO＆NCIPI

2. 发明专利

JP2008244017A Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：JP2008244017A
公开(公告)日：2008-10-09
申请号：JP2007080300
申请日：2007-03-26
申请人： Ube Ind Ltd , Ulvac Japan Ltd , 宇部興産株式会社 , 株式会社アルバック
发明人： ZAMA HIDEAKI , TSUNODA TAKUMI , HASEGAWA CHIHIRO
IPC分类号： H01L21/285 , C23C16/18 , H01L21/02 , H01L21/3205 , H01L23/52
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device for reducing the resistance of a ruthenium film and improving reliability.
SOLUTION: An Ru chamber F1 allows a substrate S to be heated under a reducing gas atmosphere, a raw material containing a bis (2-methoxy-6-methyl-3,5-heptanedionate) (1,5-hexadiene) ruthenium complex is supplied to the reducing gas atmosphere, and the ruthenium film is formed on the substrate S. Then, a heat-treatment chamber F2 further heats the substrate S carried from the Ru chamber F1.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：解决的问题：提供一种制造用于降低钌膜的电阻并提高可靠性的半导体器件的方法。解决方案：Ru Ru室F1使底物S在还原气体气氛下加热，含有双（2-甲氧基-6-甲基-3,5-庚二酮酸酯）（1,5-己二烯）的原料，钌络合物被供给到还原气体气氛中，并且在基板S上形成钌膜。然后，热处理室F2进一步加热从Ru室F1携带的基板S. 版权所有（C）2009，JPO＆INPIT

3. 发明专利

JP2012184481A Vacuum integrated substrate processing apparatus and film deposition method 有权
标题翻译：真空集成基板加工装置和薄膜沉积方法
公开(公告)号：JP2012184481A
公开(公告)日：2012-09-27
申请号：JP2011049615
申请日：2011-03-07
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： OMORI MIKI , SUZUKI MINORU , HONDA KAZUHIRO , ZAMA HIDEAKI , KUBO MASASHI
IPC分类号： C23C16/44 , C23C16/02 , C23C16/40 , H01L21/302 , H01L21/31 , H01L21/316 , H01L21/677
摘要： PROBLEM TO BE SOLVED: To provide: a vacuum integrated substrate processing apparatus for solving a problem of air exposure after release etching, for example, for fabricating a MEMS device; and a film deposition method.SOLUTION: A vacuum integrated substrate processing apparatus includes: a polygonal conveyance chamber 11; and a release etching apparatus 12, an ALD apparatus 13, a load lock chamber 18 and the like, which are connected to each side of the polygon, respectively. Release etching and ALD deposition are performed in vacuum integrated process. Thus, electrical characteristics and optical characteristics in a device finally obtained is improved and the production yield of a display can be also improved.
摘要翻译：要解决的问题：提供：一种用于解决在剥离蚀刻之后的空气暴露问题的真空集成基板处理装置，例如用于制造MEMS装置; 和成膜方法。解决方案：真空一体化基板处理装置包括：多边形输送室11; 以及分别与多边形的每一侧连接的剥离蚀刻装置12，ALD装置13，装载锁定室18等。在真空集成过程中进行释放蚀刻和ALD沉积。因此，最终获得的装置中的电特性和光学特性得到改善，并且也可以提高显示器的产量。版权所有（C）2012，JPO＆INPIT

4. 发明专利

JP2012126977A Vacuum film forming apparatus and film deposition method 审中-公开
标题翻译：真空膜形成装置和膜沉积方法
公开(公告)号：JP2012126977A
公开(公告)日：2012-07-05
申请号：JP2010281025
申请日：2010-12-16
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： OMORI MIKI , SUZUKI MINORU , MIYAJIMA YOSHIMASA , KUBO MASASHI , KIYOTA TETSUJI , HONDA KAZUHIRO , ZAMA HIDEAKI
IPC分类号： C23C16/455 , C23C16/44 , H01L21/31 , H01L21/316
摘要： PROBLEM TO BE SOLVED: To provide a vacuum film forming apparatus which achieves shorter discharge time of a raw material gas after adsorption/reaction to increase substitution efficiency and utilization efficiency of the raw material gas and easily treats a thin film deposited on objects other than a treatment target, and a film deposition method.SOLUTION: The vacuum film forming apparatus 1 carries out film deposition through reaction of the raw material gas on the treatment target S placed on an ascending and descending support stage located inside a reaction chamber. The apparatus 1 has a double-structured chamber comprising: an outer chamber 11 that is composed of an outer wall of the vacuum film forming apparatus 1 and is equipped with an openable and closable top plate 11a; and an inner chamber 12 that is a reaction chamber installed in a lower part of the outer chamber 11 and is equipped with an openable and closable top plate 12a. A gas nozzle 15 for supplying the raw material gas to the inner chamber 12 is installed inside the inner chamber 12 so that it becomes parallel to a surface of the treatment target S. The apparatus 1 is structured so that the film is deposited on the treatment target S. Film deposition is carried out using the apparatus.
摘要翻译：要解决的问题：提供一种真空成膜装置，其在吸附/反应之后实现原料气体的放电时间更短，以提高原料气体的替代效率和利用效率，并且容易地处理沉积在物体上的薄膜除了处理对象以外，还可以使用成膜方法。解决方案：真空成膜装置1通过原料气体反应在位于反应室内的升降支撑台上的处理对象物S上进行膜沉积。装置1具有双重结构的室，包括：外室11，其由真空成膜装置1的外壁构成，并具有开闭的顶板11a; 以及内部室12，其是安装在外部室11的下部并且设置有可开启和关闭的顶板12a的反应室。用于将原料气体供给到内部室12的气体喷嘴15安装在内部室12的内部，使其变得平行于处理对象物S的表面。设备1被构造成使得膜在处理目标S.使用该装置进行膜沉积。版权所有（C）2012，JPO＆INPIT

5. 发明专利

JP2012117109A Film forming device 有权
标题翻译：电影制作装置
公开(公告)号：JP2012117109A
公开(公告)日：2012-06-21
申请号：JP2010267795
申请日：2010-11-30
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： OSONO SHUJI , YAMAMOTO HIROKO , NISHIKATA YASUSHI , ZAMA HIDEAKI
IPC分类号： C23C14/58 , C23C14/02
摘要： PROBLEM TO BE SOLVED: To provide a film forming device capable of efficiently producing thin films without ion damage while preventing peeling between the thin films.SOLUTION: The film forming device includes: a first film forming treatment apparatus 13 and a second film forming treatment apparatus 15 in which a thin film is formed on a substrate S; and a surface treatment apparatus 14 in which hydrogen gas supplied in a reaction chamber 141 is brought into contact with a catalyst body to generate radical and the radical is supplied to the substrate S to perform surface treatment of the substrate S. The surface treatment apparatus 14 is provided to perform the surface treatment of the substrate S at the backward of the first film forming treatment apparatus 13 and the forward of the second film forming treatment apparatus 15.
摘要翻译：要解决的问题：提供一种能够有效地生产薄膜而不会产生离子损伤同时防止薄膜之间的剥离的成膜装置。＆lt; P＆gt;解决方案：成膜装置包括：第一成膜处理装置13和第二成膜处理装置15，其中在基板S上形成薄膜; 以及表面处理装置14，其中供应到反应室141中的氢气与催化剂体接触以产生自由基，并且将基体供应到基板S以进行基板S的表面处理。表面处理装置14 被设置为在第一成膜处理装置13的后方和第二成膜处理装置15的前方进行基板S的表面处理。（C）2012，JPO＆INPIT

6. 发明专利

JP2009081431A Method of manufacturing semiconductor device 有权
公开(公告)号：JP2009081431A
公开(公告)日：2009-04-16
申请号：JP2008226432
申请日：2008-09-03
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： ZAMA HIDEAKI , ISHIKAWA MICHIO
IPC分类号： H01L21/285 , C23C16/18 , H01L21/28 , H01L21/3205 , H01L23/52
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device of which the reliability is improved by reducing the resistance of copper wiring containing a ruthenium-containing film and a copper-containing film, and to provide a method of manufacturing a semiconductor device.
SOLUTION: By a CVD method using a raw material containing an organic ruthenium complex expressed by a general formula 1 and reducing gas, an Ru film is formed on a substrate on which a recess is formed (step S12). By a CVD method using a raw material containing an organic copper complex expressed by a general formula 2 and reducing gas, a Cu film is formed on the Ru film, and copper wiring is formed at the recess (step S14).
COPYRIGHT: (C)2009,JPO&INPIT

7. 发明专利

JP2009044056A Method for manufacturing copper film 审中-公开
标题翻译：制造铜膜的方法
公开(公告)号：JP2009044056A
公开(公告)日：2009-02-26
申请号：JP2007209485
申请日：2007-08-10
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： ZAMA HIDEAKI , WATABE MIKIO , YOSHIHAMA TOMOYUKI
IPC分类号： H01L21/28 , C23C14/14 , C23C16/18 , H01L21/3205 , H01L23/52
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a copper film excellent in adhesion with a base layer. SOLUTION: After the base layer is formed on a film-forming object, this base layer is thermally treated in a hydrogen gas atmosphere and then the copper film is formed thereon. After the copper film is formed in such a manner, further thermal treatment is carried out in the hydrogen gas atmosphere. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：待解决的问题：提供一种制造与基底层粘合性优异的铜膜的方法。解决方案：在成膜物体上形成基底层之后，在氢气气氛中对基底层进行热处理，然后在其上形成铜膜。在以这种方式形成铜膜之后，在氢气气氛中进行进一步的热处理。版权所有（C）2009，JPO＆INPIT

8. 发明专利

JP2013048268A Method for producing copper film 审中-公开
标题翻译：生产铜膜的方法
公开(公告)号：JP2013048268A
公开(公告)日：2013-03-07
申请号：JP2012230634
申请日：2012-10-18
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： ZAMA HIDEAKI , WATABE MIKIO , YOSHIHAMA TOMOYUKI
IPC分类号： H01L21/28 , C23C16/18 , C23C16/56 , H01L21/285 , H01L21/3205 , H01L21/768 , H01L23/532
摘要： PROBLEM TO BE SOLVED: To provide a method for producing a copper film excellent in adhesion to a base layer.SOLUTION: After a titanium film is formed as a base layer on a film formation object, the base layer is heat-treated at a temperature equal to or higher than 100°C and lower than 200°C in a hydrogen gas atmosphere, and then a copper film is formed on the base film. After the copper film is formed in this way, heat treatment is performed at a temperature equal to or higher than 100°C and lower than 200°C in the hydrogen gas atmosphere.
摘要翻译：待解决的问题：提供一种生产与基底层粘附性优异的铜膜的方法。解决方案：在成膜物体上形成钛膜作为基底层之后，在氢气气氛中，在等于或高于100℃且低于200℃的温度下对基底层进行热处理，然后在基膜上形成铜膜。在以这种方式形成铜膜之后，在氢气气氛中在等于或高于100℃且低于200℃的温度下进行热处理。版权所有（C）2013，JPO＆INPIT

9. 发明专利

JP2006093550A Method of forming vanadium content film 有权
标题翻译：形成VANADIUM内容膜的方法
公开(公告)号：JP2006093550A
公开(公告)日：2006-04-06
申请号：JP2004279363
申请日：2004-09-27
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： ZAMA HIDEAKI , WATABE MIKIO
IPC分类号： H01L21/285 , C23C16/18 , H01L21/28
摘要： PROBLEM TO BE SOLVED: To provide a method of forming a vanadium content film as a base layer having a sufficient characteristic by a CVD method.
SOLUTION: The vanadium content film is formed by the CVD method by using metal material gas and reducing gas such as TDEAV or TDMAV. Reducing gas deviates, can discharge H
* radicals and H
+ ions, and is selected from tertiary butyl hydrazine, NH
3 and H
2 , for example. Reaction of metal material gas and reducing gas is performed in a temperature region where film forming speed depends on a substrate temperature.
COPYRIGHT: (C)2006,JPO&NCIPI

10. 发明专利

JP2012184482A Vacuum film forming apparatus and film forming method 审中-公开
标题翻译：真空膜成膜装置和薄膜成型方法
公开(公告)号：JP2012184482A
公开(公告)日：2012-09-27
申请号：JP2011049616
申请日：2011-03-07
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： HONDA KAZUHIRO , ZAMA HIDEAKI
IPC分类号： C23C16/44 , H01L21/31 , H01L21/316
摘要： PROBLEM TO BE SOLVED: To provide a vacuum film forming apparatus and a film forming method, capable of improving utilization efficiency and replacement efficiency of a source gas and facilitating treatment of a thin film stuck on somewhere other than a treatment object.SOLUTION: A vacuum film forming apparatus 1 is directed for supplying a plurality of source gases to a reaction chamber alternately in pulses and forming a film on a treatment object S mounted on a freely elevatable and lowerable support stage, and is constituted of a double structure chamber including an outer chamber 11 provided with a freely openable and closable top plate 11a and an inner chamber 12 installed on a lower part inside the outer chamber 11 and provided with a freely openable and closable top plate 12a. A gas nozzle 15 for supplying the source gas into the inner chamber 12 is provided inside the inner chamber 12 so as to be in parallel with the surface of the treatment object S, a trap for introducing the source gas not contributing to film formation is provided in a gas discharge route inside the inner chamber 12, and a pressure adjustment valve for adjusting a pressure inside the vacuum film forming apparatus 1 and an exhaust system are provided on the downstream side.
摘要翻译：要解决的问题：提供一种真空成膜装置和成膜方法，其能够提高源气体的利用效率和替换效率，并且便于处理粘附在处理对象以外的薄膜的处理。解决方案：真空成膜装置1用于以脉冲方式交替地向反应室供应多个源气体，并在安装在可自由升降和可降低的支撑台上的处理对象S上形成膜，并且由双重结构室，包括设置有可自由打开和关闭的顶板11a的外部室11和安装在外部室11内部的下部并具有可自由打开和关闭的顶板12a的内部室12。在内室12的内部设置用于将源气体供给到内室12的气体喷嘴15，以与处理对象S的表面平行，设置用于引入不对成膜有贡献的源气体的捕集器在内室12内的气体排出路径中，在下游侧设置用于调整真空成膜装置1内部的压力的调压阀和排气系统。版权所有（C）2012，JPO＆INPIT

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