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1. 发明专利

JP2012064919A Method for processing energization heating wire 有权
标题翻译：加热加热线的方法
公开(公告)号：JP2012064919A
公开(公告)日：2012-03-29
申请号：JP2011094006
申请日：2011-04-20
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： OSONO SHUJI , NISHIKATA YASUSHI , TAMARU YOSHIHISA , YAMADA KIICHI , OGATA HIDEYUKI , SAITO KAZUYA
IPC分类号： H01L21/205 , C23C16/44
摘要： PROBLEM TO BE SOLVED: To provide an energization heating wire which does not extend by heat and is excellent in durability; a method for manufacturing the energization heating wire; and a vacuum processing apparatus using the energization heating wire.SOLUTION: The energization heating wire (TaBN wire 20) has a first layer 21 made from a tantalum nitride wire and a second layer 22 which coats a surface of the first layer 21 and is made from boride, for instance. That is, the second layer coats the surface of the tantalum nitride wire having high strength and less deformation, thereby, nitrogen removal from the tantalum nitride wire can be suppressed under a high temperature environment, and the energization heating wire can be used as an energization heating wire having extremely high durability. The vacuum processing apparatus using such a TaBN wire 20 can reduce cost, improve productivity, and simultaneously be expected to stabilize film quality when a film is formed on a substrate.
摘要翻译：要解决的问题：提供一种不会被热延伸并且耐久性优异的通电加热丝; 一种用于制造通电加热丝的方法; 以及使用通电用加热丝的真空处理装置。
解决方案：通电加热线（TaBN线20）具有由氮化钽线制成的第一层21和涂覆第一层21的表面并由硼化物制成的第二层22。也就是说，第二层涂覆了具有高强度和较小变形的氮化钽丝的表面，从而可以在高温环境下抑制氮化钽丝脱氮，并且通电加热丝可以用作通电加热丝具有极高的耐久性。使用这种TaBN线20的真空处理装置可以降低成本，提高生产率，并且同时可以期望当在基板上形成膜时使膜质量稳定。版权所有（C）2012，JPO＆INPIT

2. 发明专利

JP2012041576A Energization heating wire, film forming apparatus, and method for producing energization heating wire 有权
标题翻译：能量加热线，成膜装置和生产加热加热线的方法
公开(公告)号：JP2012041576A
公开(公告)日：2012-03-01
申请号：JP2010181706
申请日：2010-08-16
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： OSONO SHUJI , NISHIKATA YASUSHI , TAMARU YOSHIHISA , YAMADA KIICHI , OGATA HIDEYUKI , SAITO KAZUYA
IPC分类号： C23C16/44
摘要： PROBLEM TO BE SOLVED: To provide an energization heating wire having high durability and low electrical resistance, a film forming apparatus using the energization heating wire, and a method for producing the energization heating wire.SOLUTION: The energization heating wire 6 has a core part 6a and a peripheral edge part 6b. The core part 6a is linear and is made of tantalum. The peripheral edge part 6b is made of tantalum carbide and covers the core part 6a. The energization heating wire 6 has high thermal and mechanical endurance because in the energization heating wire 6, the core part 6a made of metallic tantalum is covered with the peripheral edge part 6b made of tantalum carbide having high creep strength and high mechanical strength at high temperatures. Further, the energization heating wire 6 has high conductivity and can be heated with an applied voltage comparable to an energization heating wire made only of metallic tantalum because a large portion of the cross-sectional structure of the energization heating wire 6 is the core part 6a made of metallic tantalum.
摘要翻译：要解决的问题：提供一种具有高耐久性和低电阻的通电加热丝，使用通电加热丝的成膜装置和用于产生通电加热丝的方法。
解决方案：通电加热丝6具有芯部6a和周缘部6b。芯部6a是线性的并且由钽制成。周缘部6b由碳化钽制成并覆盖芯部6a。通电加热线6具有高的热机械耐久性，因为在通电加热丝6中，由金属钽制成的芯部6a被在高温下具有高蠕变强度和高机械强度的碳化钽制成的周缘部6b覆盖。此外，通电加热丝6具有高导电性，并且可以以与由金属钽制成的通电加热线相当的施加电压进行加热，因为通电加热丝6的截面结构的大部分是芯部6a 由金属钽制成。版权所有（C）2012，JPO＆INPIT

3. 发明专利

JP2012119537A Method of manufacturing photoelectric conversion device 有权
标题翻译：制造光电转换器件的方法
公开(公告)号：JP2012119537A
公开(公告)日：2012-06-21
申请号：JP2010268820
申请日：2010-12-01
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： TANAKA YOSHIKAZU , SAITO KAZUYA , KATAGIRI HIROAKI , KOMATSU TAKASHI , OKO YOSHIKI , KANAZAWA KEISUKE , TAKAGI MAKIKO , NISHIKATA YASUSHI , OSONO SHUJI , SAKATA GENJI , YOKOO HIDEKAZU , SUZUKI HIDEO , TOMITA MASATO , NISHIBASHI TSUTOMU
IPC分类号： H01L31/04
CPC分类号： Y02E10/546 , Y02P70/521
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a photoelectric conversion device which can reduce the number of manufacturing steps of a photoelectric conversion device having an impurity region on the side surface of a semiconductor substrate covered with a passivation film.SOLUTION: A solar cell comprises a silicon substrate 11 having a light-receiving surface 11a, and a rear surface 11b on the reverse side of the light-receiving surface 11a is covered with a silicon oxide film 13 and a silicon nitride film 14 while having an N type impurity region 11n and a P type impurity region. When the solar cell is manufactured, the silicon oxide film 13 and the silicon nitride film 14 are formed on the rear surface 11b. Subsequently, an ion beam 23a of N type impurity element is irradiated toward the rear surface 11b from above the silicon oxide film 13 and silicon nitride film 14 thus forming an N type impurity region 11n in the rear surface 11b. An ion beam 24a of P type impurity element is also irradiated toward the rear surface 11b from above the silicon oxide film 13 and silicon nitride film 14 thus forming a P type impurity region in the rear surface 11b.
摘要翻译：解决的问题：提供一种制造光电转换装置的方法，其可以减少在被钝化膜覆盖的半导体衬底的侧表面上具有杂质区的光电转换装置的制造步骤数量。解决方案：太阳能电池包括具有光接收表面11a的硅衬底11，并且在受光面11a的背面上的后表面11b被氧化硅膜13覆盖，并且氮化硅膜同时具有N型杂质区域11n和P型杂质区域。当制造太阳能电池时，在后表面11b上形成氧化硅膜13和氮化硅膜14。随后，从后面11b中形成N型杂质区域11n的氧化硅膜13和氮化硅膜14的上方向背面11b照射N型杂质元素的离子束23a。 P型杂质元素的离子束24a也从氧化硅膜13和氮化硅膜14的背面11b向背面11b照射，从而形成P型杂质区。版权所有（C）2012，JPO＆INPIT

4. 发明专利

JP2012060080A Crystal solar battery and method for producing the same 审中-公开
标题翻译：水晶太阳能电池及其制造方法
公开(公告)号：JP2012060080A
公开(公告)日：2012-03-22
申请号：JP2010204734
申请日：2010-09-13
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： TANAKA YOSHIKAZU , KIKUCHI MAKOTO , KATAGIRI HIROAKI , KOMATSU TAKASHI , KIKUCHI YUKIO , OSONO SHUJI , NISHIKATA YASUSHI , TAKAGI MAKIKO , KANAZAWA KEISUKE , SAKAO YOSUKE , ASARI SHIN , SAITO KAZUYA , OTA ATSUSHI
IPC分类号： H01L31/04
CPC分类号： H01L31/028 , H01L31/03685 , H01L31/03687 , H01L31/03762 , H01L31/03765 , H01L31/056 , H01L31/0747 , H01L31/1804 , H01L31/1812 , H01L31/202 , H01L31/204 , Y02E10/52 , Y02E10/545 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： PROBLEM TO BE SOLVED: To provide a solar battery with further improved photoelectric transfer characteristic.SOLUTION: A solar battery of the present invention is a crystal solar battery having a crystalline substrate that implements a photoelectric conversion function between a light-receiving surface for receiving light and a reverse surface opposite to the light-receiving surface. The crystalline substrate is a flat base substrate including a p-type or n-type monocrystalline or polycrystalline silicon, the crystalline substrate comprises: a first semiconductor layer comprising an amorphous or microcrystalline silicon of reverse or same conductivity type with regard to the base substrate disposed on the light-receiving surface side of the base substrate; a second semiconductor layer comprising an amorphous or microcrystalline silicon of reverse conductive type with regard to the first semiconductor layer disposed on the rear side of the base substrate; and a silicon oxide layer disposed between the base substrate and the first semiconductor layer or between the base substrate and the second semiconductor substrate.
摘要翻译：要解决的问题：提供具有进一步改善的光电转移特性的太阳能电池。解决方案：本发明的太阳能电池是具有在用于接收光的受光面与与受光面相反的反面之间实现光电转换功能的晶体基板的晶体太阳能电池。晶体衬底是包括p型或n型单晶或多晶硅的平坦基底，晶体衬底包括：第一半导体层，其包括相对于基底衬底布置的反向或相同导电类型的非晶或微晶硅在基底基板的受光面侧; 第二半导体层，其包括相对于设置在所述基底基板的后侧上的所述第一半导体层的反向导电型的非晶或微晶硅; 以及设置在所述基底基板和所述第一半导体层之间或所述基底基板和所述第二半导体基板之间的氧化硅层。版权所有（C）2012，JPO＆INPIT

5. 发明专利

JP2009130255A Deposition device 审中-公开
标题翻译：沉积装置
公开(公告)号：JP2009130255A
公开(公告)日：2009-06-11
申请号：JP2007305877
申请日：2007-11-27
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： OSONO SHUJI , NISHIKATA YASUSHI , ASARI SHIN , OGATA HIDEYUKI , OKAYAMA TOMOHIKO
IPC分类号： H01L21/205 , C23C16/44 , C23C16/52
摘要： PROBLEM TO BE SOLVED: To provide a deposition device that improves stability of deposition processing, using a catalytic wire, by measuring a temperature of a catalytic wire under high reliability.
SOLUTION: The deposition device has a power supply for heating a catalytic wire 15 to allow the catalytic wire 15 to emit visible light, each transmissive window 22 formed in each deposition chamber to transmit visible light from inside each deposition chamber to the outside, each luminosity detection part 20 arranged to the outside of each deposition chamber to detect luminosity via each transmissive window 22, a storage part 25B for previously storing target luminosity data regarding luminosity when the catalytic wire is at a prescribed temperature, a control part 25 for comparing the detection result of each luminosity detection part 20 with the target luminosity data to determine whether the temperature of the catalytic wire 15 reaches the prescribed temperature, and an output part 26 to output the determination results of the control part 25.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：解决的问题：提供一种通过在高可靠性下测量催化丝的温度来提高使用催化丝的沉积处理稳定性的沉积装置。解决方案：沉积装置具有用于加热催化丝15以允许催化丝15发射可见光的电源，每个沉积室中形成的每个透射窗22将每个沉积室内的可见光透射到外部每个照度检测部分20布置在每个沉积室的外部以经由每个透射窗22检测发光度;存储部25B，用于预先存储当催化丝处于规定温度时的亮度的目标亮度数据;控制部25，将每个亮度检测部分20的检测结果与目标亮度数据进行比较，以确定催化剂丝15的温度是否达到规定温度;以及输出部分26，输出控制部分25的确定结果。（C）2009，JPO＆INPIT

6. 发明专利

JP2012227380A Energization heating wire, production method of energization heating wire and vacuum processing apparatus 有权
标题翻译：加热加热线，加热线和真空加工装置的生产方法
公开(公告)号：JP2012227380A
公开(公告)日：2012-11-15
申请号：JP2011094089
申请日：2011-04-20
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： OSONO SHUJI , NISHIKATA YASUSHI , TAMARU YOSHIHISA , OGATA HIDEYUKI
IPC分类号： H01L21/31 , C23C16/44
摘要： PROBLEM TO BE SOLVED: To provide an energization heating wire which does not elongate thermally and has excellent durability, and to provide a production method of an energization heating wire and a vacuum processing apparatus.SOLUTION: The energization heating wire (TaBN wire 20) has a first layer 21 consisting of a tantalum nitride wire, and a second layer 22 covering the surface of the first layer 21 and consisting of a boride, for example. In other words, denitrogenation from the tantalum nitride wire can be suppressed under a high temperature environment, by covering the surface of the tantalum nitride wire having high strength and low deformation with the second layer, and the tantalum nitride wire can be used as an energization heating wire having very high durability. A vacuum processing apparatus using such a TaBN wire 20 can enhance productivity while reducing the cost and, at the same time, film quality can be stabilized during deposition of substrate.
摘要翻译：要解决的问题：提供一种不会热延伸并且具有优异的耐久性的通电加热丝，并且提供通电加热丝和真空处理装置的制造方法。
解决方案：通电加热线（TaBN线20）具有由氮化钽线构成的第一层21和覆盖第一层21的表面的第二层22，例如由硼化物构成。换句话说，可以在高温环境下，通过用第二层覆盖高强度和低变形的氮化钽线的表面，可以抑制来自氮化钽线的脱氮，并且氮化钽线可以用作通电加热丝具有非常高的耐久性。使用这种TaBN线20的真空处理装置可以在降低成本的同时提高生产率，并且同时可以在沉积基板期间使膜质量稳定。版权所有（C）2013，JPO＆INPIT

7. 发明专利

JP2012117109A Film forming device 有权
标题翻译：电影制作装置
公开(公告)号：JP2012117109A
公开(公告)日：2012-06-21
申请号：JP2010267795
申请日：2010-11-30
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： OSONO SHUJI , YAMAMOTO HIROKO , NISHIKATA YASUSHI , ZAMA HIDEAKI
IPC分类号： C23C14/58 , C23C14/02
摘要： PROBLEM TO BE SOLVED: To provide a film forming device capable of efficiently producing thin films without ion damage while preventing peeling between the thin films.SOLUTION: The film forming device includes: a first film forming treatment apparatus 13 and a second film forming treatment apparatus 15 in which a thin film is formed on a substrate S; and a surface treatment apparatus 14 in which hydrogen gas supplied in a reaction chamber 141 is brought into contact with a catalyst body to generate radical and the radical is supplied to the substrate S to perform surface treatment of the substrate S. The surface treatment apparatus 14 is provided to perform the surface treatment of the substrate S at the backward of the first film forming treatment apparatus 13 and the forward of the second film forming treatment apparatus 15.
摘要翻译：要解决的问题：提供一种能够有效地生产薄膜而不会产生离子损伤同时防止薄膜之间的剥离的成膜装置。＆lt; P＆gt;解决方案：成膜装置包括：第一成膜处理装置13和第二成膜处理装置15，其中在基板S上形成薄膜; 以及表面处理装置14，其中供应到反应室141中的氢气与催化剂体接触以产生自由基，并且将基体供应到基板S以进行基板S的表面处理。表面处理装置14 被设置为在第一成膜处理装置13的后方和第二成膜处理装置15的前方进行基板S的表面处理。（C）2012，JPO＆INPIT

8. 发明专利

JP2009182150A Film-forming apparatus and film-forming method 有权
标题翻译：薄膜成型装置和成膜方法
公开(公告)号：JP2009182150A
公开(公告)日：2009-08-13
申请号：JP2008019784
申请日：2008-01-30
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： OSONO SHUJI , NISHIKATA YASUSHI , ASARI SHIN , KIKUCHI MASASHI
IPC分类号： H01L21/205 , C23C16/44
摘要： PROBLEM TO BE SOLVED: To provide a film-forming apparatus and a film-forming method avoiding a displacement of a catalyst wire when electric current is supplied. SOLUTION: There are provided a film-forming stage holding a substrate S by setting up a film-forming face Sa of the substrate S, the catalyst wire 15 hung down so as to face the film-forming face Sa, and a power source for supplying electric current to the catalyst wire 15 for heating the catalyst wire 15, wherein a film-forming seed is generated by supplying a material gas to the heated catalyst wire 15, and a thin film is formed on the film-forming face Sa by depositing the film-forming seed on the film-forming face Sa. Also, there is provided a restriction wire 20 for imposing a restrictive magnetic field to the catalyst wire 15 by forming the restrictive magnetic field restricting the catalyst wire 15 along the film-forming Sa by acting on charged particles flowing in the catalyst wire 15. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种成膜设备和成膜方法，以避免当供应电流时催化剂丝的位移。解决方案：通过设置基板S的成膜面Sa来提供保持基板S的成膜阶段，催化剂丝15垂直于成膜面Sa，并且用于向用于加热催化剂丝15的催化剂丝15提供电流的电源，其中通过向加热的催化剂丝15供应原料气体而产生成膜种子，并且在成膜面上形成薄膜通过将成膜种子沉积在成膜面Sa.上。此外，还提供了一种限制线20，用于通过对通过在催化剂丝15中流动的带电粒子的作用形成限制催化剂丝15沿着成膜Sa的限制磁场，向催化剂丝15施加限制性磁场。 P>版权所有（C）2009，JPO＆INPIT

9. 发明专利

JP2009127100A Film deposition system 有权
标题翻译：电影沉积系统
公开(公告)号：JP2009127100A
公开(公告)日：2009-06-11
申请号：JP2007304398
申请日：2007-11-26
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： NISHIKATA YASUSHI , OSONO SHUJI , ASARI SHIN , SAITO KAZUYA , OGATA HIDEYUKI , OKAYAMA TOMOHIKO
IPC分类号： C23C16/44 , H01L21/205 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To provide a film deposition system where the feeding state of a film deposition gas is stabilized in film deposition treatment utilizing catalyst lines.
SOLUTION: The film deposition system comprises: a first stage holding a pair of substrates S in a state of being erected and allowing the respective substrates S to face each other; a plurality of catalyst lines 15 arranged at a gap (reaction space) between the respective substrates S; and a gas feed part 20 feeding a film deposition gas to the reaction space. The gas feed part 20 comprises: a plurality of nozzles N1 arranged at the outside of the reaction space and elongating along the facial directions of the substrates S; and shielding pieces 22a surrounding the openings of the respective nozzles N1.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种使用催化剂管线进行膜沉积处理使成膜气体的供给状态稳定的成膜系统。解决方案：成膜系统包括：第一阶段，保持处于竖立状态的一对基板S，并使各基板S彼此相对; 布置在各个基板S之间的间隙（反应空间）的多个催化剂管线15; 以及将成膜气体供给到反应空间的气体供给部20。气体供给部件20包括：多个喷嘴N1，其布置在反应空间的外部并沿着基板S的面向延伸; 以及围绕各个喷嘴N1的开口的屏蔽片22a。版权所有（C）2009，JPO＆INPIT

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