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1. 发明专利

JP2013171637A Ion implantation device 审中-公开
标题翻译：离子植入装置
公开(公告)号：JP2013171637A
公开(公告)日：2013-09-02
申请号：JP2012033230
申请日：2012-02-17
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： ISHIKAWA MICHIO , NISHIBASHI TSUTOMU , FURUKAWA YUKIHIRO , YAMAGUCHI NOBORU , MIURA MAKOTO , SAKATA GENJI , YOKOO HIDEKAZU
IPC分类号： H01J37/317 , H01L21/265 , H01L31/04
CPC分类号： Y02E10/547
摘要： PROBLEM TO BE SOLVED: To provide an ion implantation device with a simple configuration, capable of effectively preventing a region including a part from a peripheral edge of a processing object to its lateral face from being deposited by an active species of a process gas at ion implantation.SOLUTION: An ion implantation device IM comprises: a vacuum chamber 1 whose interior is sectioned into a plasma generation chamber 1a and a plasma processing chamber 1b where a silicon substrate W is disposed, by a mesh electrode 3; plasma generation means introducing a process gas containing impurity atoms into the plasma generation chamber to generate plasma; and a power supply E2 extracting and accelerating ions of the process gas ionized in the plasma generated in the plasma generation chamber, and supplying power having a predetermined potential to the mesh electrode. The ion implantation device IM further comprises shielding means 8 placed between the mesh electrode and the processing object, and shielding only a peripheral edge of the processing object.
摘要翻译：要解决的问题：提供一种具有简单结构的离子注入装置，其能够有效地防止包括来自加工对象的周边边缘的部分的侧面的区域被离子的处理气体的活性种类沉积离子注入装置IM包括：通过网状电极3将内部分成等离子体产生室1a的真空室1和设置有硅基板W的等离子体处理室1b; 等离子体产生装置将含有杂质原子的处理气体引入等离子体发生室以产生等离子体; 以及电源E2提取并加速在等离子体产生室中产生的等离子体中离子化的处理气体的离子，并向网状电极供给具有预定电位的电力。离子注入装置IM还包括放置在网状电极和处理对象之间的屏蔽装置8，并且仅屏蔽处理对象的外围边缘。

2. 发明专利

JP2013118223A Manufacturing method for crystal solar cell and crystal solar cell 有权
标题翻译：晶体太阳能电池和晶体太阳能电池的制造方法
公开(公告)号：JP2013118223A
公开(公告)日：2013-06-13
申请号：JP2011263891
申请日：2011-12-01
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： ISHIKAWA MICHIO , NISHIBASHI TSUTOMU , FURUKAWA YUKIHIRO , YAMAGUCHI NOBORU , SAKATA GENJI
IPC分类号： H01L31/04
CPC分类号： Y02E10/546 , Y02E10/547 , Y02P70/521
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method for a crystal solar cell capable of preventing a conductive part (low resistance region) from being formed in an end surface of a substrate without need of laser irradiation.SOLUTION: A manufacturing method for a crystal solar cell including a crystal substrate which expresses a photoelectric conversion function between a light-receiving surface which receives light and a rear surface facing the light-receiving surface comprises successively at least: a first step of implanting a phosphorus (P) ion into one principal surface side of a plate-like base substance composed of a single crystal silicon or a polycrystal silicon using the base substance as the crystal substrate; a second step of removing a coating stuck to the end surface part of the base substance in the first step and composed of a phosphorus (P) by evaporating the coating by performing heat treatment with respect to the base substance; and a third step of performing annealing treatment with respect to the base substance.
摘要翻译：要解决的问题：提供一种能够防止在基板的端面中形成导电部分（低电阻区域）而不需要激光照射的晶体太阳能电池的制造方法。解决方案：一种晶体太阳能电池的制造方法，其包括在接收光的受光面和面对光接收表面的后表面之间表现光电转换功能的晶体基板，其至少依次包括：第一步骤使用该基体作为晶体基板将磷（P）离子注入到由单晶硅或多晶硅构成的板状基体的一个主面侧; 在第一步骤中除去粘附在基础物质的端面部分上并由磷（P）组成的涂层的第二步骤，通过相对于基础物质进行热处理来蒸发涂层; 以及对所述基础物质进行退火处理的第三工序。版权所有（C）2013，JPO＆INPIT

3. 发明专利

JP2013040369A Ion implantation method and method of manufacturing magnetic recording medium 有权
标题翻译：离子注入方法和制造磁记录介质的方法
公开(公告)号：JP2013040369A
公开(公告)日：2013-02-28
申请号：JP2011177439
申请日：2011-08-15
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： YAMAGUCHI NOBORU , NISHIBASHI TSUTOMU , FURUKAWA SACHIHIRO , ISHIKAWA MICHIO
IPC分类号： C23C14/48 , G11B5/84 , G11B5/851 , G11B5/855
摘要： PROBLEM TO BE SOLVED: To provide an ion implantation method with excellent productivity, capable of preventing recesses and projections on a surface of a workpiece.SOLUTION: In the ion implantation method, a processing gas containing at least one selected from molecules indicated by XmYn (in the formula, either one of X and Y is a hydrogen atom and then the other thereof is an atom whose mass number is 11 to 40, the number of the hydrogen atoms is 1 to 6, and the number of the other atoms is 1 to 2) is used, the processing gas is introduced under decompression to form plasma, ions ionized in the plasma are drawn, and the drawn ions are accelerated and doped into a workpiece W. At least one of the partial pressure of the processing gas, implantation energy of the ions and implantation dose of the ions is controlled, and the etching speed of active species by the accelerated ions is made slower than the deposition speed of the active species deposited on the surface of the workpiece W.
摘要翻译：解决的问题：提供能够防止工件表面上的凹凸的优异的生产率的离子注入方法。解决方案：在离子注入法中，含有选自XmYn所示的分子中的至少一种的处理气体（在该式中，X和Y中的任一个为氢原子，其二为原子，其质量数为11〜40，氢原子数为1〜6，其他原子数为1〜2），在减压下导入处理气体形成等离子体，在等离子体中离子化的离子被拉伸，并且所拉出的离子被加速并掺杂到工件W中。处理气体的分压，离子的注入能量和离子的注入剂量中的至少一个被控制，并且加速离子的活性物质的蚀刻速度比沉积在工件表面上的活性物质的沉积速度慢。（C）2013，JPO＆INPIT

4. 发明专利

JP2013016553A Manufacturing method of crystal solar cell 有权
标题翻译：晶体太阳能电池的制造方法
公开(公告)号：JP2013016553A
公开(公告)日：2013-01-24
申请号：JP2011146554
申请日：2011-06-30
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： ISHIKAWA MICHIO , NISHIBASHI TSUTOMU , FURUKAWA YUKIHIRO , YAMAGUCHI NOBORU , SAKATA GENJI
IPC分类号： H01L31/04 , H01L21/265
CPC分类号： Y02E10/546 , Y02E10/547
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of a crystal solar cell capable of improving photoelectric conversion efficiency by reducing resistance of a p-type semiconductor layer formed on one principal surface of a crystal substrate and resistance of an n-type semiconductor layer formed on the other principal surface of the crystal substrate.SOLUTION: A manufacturing method of a crystal solar cell 100 having a crystal substrate which exhibits a photoelectric conversion function between a light-receiving surface which receives light and a rear surface facing the light-receiving surface comprises, in order, at least: a first step of forming a p-type semiconductor layer 102 by implanting a p-type ion in a one principal surface 101b side of a plate-like base 101 composed of a p-type monocrystal or polycrystal silicon using the base 101 as the crystal substrate; a second step of forming an n-type semiconductor layer 103 by implanting an n-type ion in the other principal surface 101a side of the base 101; and a third step of performing annealing processing for the base 101 using a lamp.
摘要翻译：解决的问题：提供一种能够通过降低形成在晶体基板的一个主表面上的p型半导体层的电阻和n型电阻来提高光电转换效率的晶体太阳能电池的制造方法半导体层形成在晶体基板的另一个主表面上。解决方案：具有在接收光的受光面和面对光接收表面的后面之间具有光电转换功能的晶体基板的晶体太阳能电池100的制造方法至少依次包括：通过使用基底101作为p型单晶或多晶硅构成的板状基底101的一个主表面101b侧注入p型离子来形成p型半导体层102的第一步骤晶体基板; 通过在基座101的另一个主表面101a侧注入n型离子来形成n型半导体层103的第二步骤; 以及使用灯对基座101进行退火处理的第三步骤。版权所有（C）2013，JPO＆INPIT

5. 发明专利

JP2012222270A Etching apparatus and etching method 审中-公开
标题翻译：蚀刻装置和蚀刻方法
公开(公告)号：JP2012222270A
公开(公告)日：2012-11-12
申请号：JP2011088904
申请日：2011-04-13
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： MORIKAWA YASUHIRO , ISHIKAWA MICHIO
IPC分类号： H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide an etching apparatus and an etching method which allow improvement of in-plane uniformity of etching under high pressure, and suppression of reduction in the etching rate.SOLUTION: The etching apparatus comprises: a vacuum chamber 11 in which a substrate S is loaded; a lower electrode 25 on which the substrate S is placed; an upper electrode 12 opposed to the lower electrode 25 over a plasma generation space PL; a high frequency power source 26 connected with the lower electrode 25; a gas inlet 12a for supplying an etching gas into the vacuum chamber 11; and an air exhaustion-system control part C2 for regulating the pressure inside the vacuum chamber 11. The high frequency power source 26 supplies the lower electrode 25 with a high frequency power of a VHF frequency band. The air exhaustion-system control part C2 regulates the pressure inside the vacuum chamber 11 to fall between 50 and 150 Pa inclusive. The inter-electrode distance L between the lower electrode 25 and the upper electrode 12 is between 50 and 100 mm inclusive.
摘要翻译：要解决的问题：提供一种蚀刻装置和蚀刻方法，其可以在高压下提高蚀刻的面内均匀性，并且抑制蚀刻速率的降低。解决方案：蚀刻装置包括：装载有基板S的真空室11; 放置基板S的下电极25; 在等离子体产生空间PL上与下电极25相对的上电极12; 与下电极25连接的高频电源26; 用于向真空室11供给蚀刻气体的气体入口12a; 以及用于调节真空室11内的压力的排气系统控制部C2。高频电源26向下电极25提供VHF频带的高频功率。排气系统控制部C2将真空室11内的压力调节为50〜150Pa。下电极25和上电极12之间的电极间距离L在50和100mm之间。版权所有（C）2013，JPO＆INPIT

6. 发明专利

JP2012146709A Bonding method of substrate and method of manufacturing laminate substrate 有权
标题翻译：基板的接合方法和制造层压基板的方法
公开(公告)号：JP2012146709A
公开(公告)日：2012-08-02
申请号：JP2011001558
申请日：2011-01-06
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： ISHIKAWA MICHIO , TOYODA SATOSHI , MURAKAMI HIROHIKO , IRIKURA HAGANE
IPC分类号： H01L21/02 , H01L25/065 , H01L25/07 , H01L25/18 , H01L27/00 , H01L27/10
CPC分类号： H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a bonding method of substrates capable of rigid bonding while suppressing warpage when a plurality of substrates are bonded.SOLUTION: The bonding method of substrates includes a first underlying layer formation step for forming a first underlying layer 35a on the surface of a first substrate Sa, a second underlying layer formation step for forming a second underlying layer 35b on the surface of a second substrate Sb, a first monomer deposition step for depositing a first monomer 13a on the first underlying layer 35a formed on the surface of a first substrate Sa, a second monomer deposition step for depositing a second monomer 13b which reacts on the first monomer 13a to form a polymer on the second underlying layer 35b formed on the surface of the second substrate Sb, and a polymer formation step for bonding the first substrate Sa and the second substrate Sb by mounting the first substrate Sa and the second substrate Sb so that the surfaces, where the monomer is deposited, face each other, and bringing the first monomer 13a and the second monomer 13b into contact with each other thereby forming a polymer by reaction.
摘要翻译：要解决的问题：提供一种当粘合多个基板时能够抑制翘曲的能够进行刚性接合的基板的接合方法。解决方案：衬底的接合方法包括用于在第一衬底Sa的表面上形成第一底层35a的第一下层形成步骤，用于在第一衬底Sa的表面上形成第二下层35b的第二下层形成步骤第二基板Sb，用于在第一基板Sa的表面上形成的第一下层35a上沉积第一单体13a的第一单体沉积步骤，用于沉积在第一单体13a上反应的第二单体13b的第二单体沉积步骤在形成在第二基板Sb的表面上的第二下层35b上形成聚合物，以及通过安装第一基板Sa和第二基板Sb来接合第一基板Sa和第二基板Sb的聚合物形成步骤，其中单体沉积的表面彼此面对，并使第一单体13a和第二单体13b彼此接触，从而形成聚合物通过反应。版权所有（C）2012，JPO＆INPIT

7. 发明专利

JP2009081431A Method of manufacturing semiconductor device 有权
公开(公告)号：JP2009081431A
公开(公告)日：2009-04-16
申请号：JP2008226432
申请日：2008-09-03
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： ZAMA HIDEAKI , ISHIKAWA MICHIO
IPC分类号： H01L21/285 , C23C16/18 , H01L21/28 , H01L21/3205 , H01L23/52
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device of which the reliability is improved by reducing the resistance of copper wiring containing a ruthenium-containing film and a copper-containing film, and to provide a method of manufacturing a semiconductor device.
SOLUTION: By a CVD method using a raw material containing an organic ruthenium complex expressed by a general formula 1 and reducing gas, an Ru film is formed on a substrate on which a recess is formed (step S12). By a CVD method using a raw material containing an organic copper complex expressed by a general formula 2 and reducing gas, a Cu film is formed on the Ru film, and copper wiring is formed at the recess (step S14).
COPYRIGHT: (C)2009,JPO&INPIT

8. 发明专利

JP2008004666A Method of manufacturing three dimensional semiconductor device 审中-公开
标题翻译：制造三维半导体器件的方法
公开(公告)号：JP2008004666A
公开(公告)日：2008-01-10
申请号：JP2006171068
申请日：2006-06-21
申请人： Ftl:Kk , Ulvac Japan Ltd , 株式会社アルバック , 株式会社エフティーエル
发明人： TAKAGI MIKIO , TAMAGAWA KOICHI , ISHIKAWA MICHIO , NISHIBASHI TSUTOMU , SEKI NOBUAKI
IPC分类号： H01L21/20 , H01L21/336 , H01L21/8244 , H01L27/11 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To provide a performance suitable for a current IC by improving crystallinity of a laser (re) crystallizing Si layer; in a method of manufacturing a three dimensional semiconductor device in which an insulating film is formed on an Si layer where a circuit of semiconductor elements is formed, a polycrystal or amorphous Si layer is stacked on the insulating film, the stacked layer is (re) crystallized by laser irradiation or scanning to form another circuit of semiconductor elements there, and these circuits are connected together.
SOLUTION: Insulating films 17 and 26 are flattened by CMP. Polycrystal or amorphous Si layers 22 and 32 are stacked, which are irradiated/scanned with solid continuous wave laser having energy of 10 J/cm
2 or higher per radiation area. A laser annealing is applied just after it.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：通过提高激光（再）结晶Si层的结晶度来提供适合于电流IC的性能; 在其中在形成有半导体元件的电路的Si层上形成绝缘膜的三维半导体器件的制造方法中，在绝缘膜上堆叠多晶或非晶Si层，堆叠层是（重新）通过激光照射或扫描结晶，形成半导体元件的另一个电路，这些电路连接在一起。
解决方案：绝缘膜17和26通过CMP扁平化。堆叠多晶硅或非晶Si层22和32，它们用每个辐射面积的能量为10J / cm 2 / SP> 2或更高的固体连续波激光器照射/扫描。激光退火刚刚应用。版权所有（C）2008，JPO＆INPIT

9. 发明专利

JP2004161539A Carbon nanotube film deposition system 有权
公开(公告)号：JP2004161539A
公开(公告)日：2004-06-10
申请号：JP2002329202
申请日：2002-11-13
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： AGAWA YOSHIAKI , HARA YASUHIRO , AMANO SHIGERU , HOSHINO AKIRA , ISHIKAWA MICHIO , MIYAGAWA YOSHIHIDE
IPC分类号： B82B3/00 , C01B31/02 , C23C16/26 , C23C16/511 , H01J9/02 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To provide a carbon nanotube film deposition system capable of forming a high quality carbon nanotube film by remarkably mitigating charge up and increasing current value of ions flowing into a substrate stage. SOLUTION: A quartz cylinder 9-a is attached to be in close contact between the substrate stage 4-b provided in a film deposition chamber and an upper part flange 2 of the film deposition chamber. Quartz disks 9-b and 9-c each having an outside diameter by 0.5-2.0 mm smaller than an opening part of the upper part flange 2 are mounted above the quartz cylinder. An invertor power source 10 is provided in the stage 4-b. COPYRIGHT: (C)2004,JPO

10. 发明专利

JP2004014631A Atmospheric pressure plasma processing system 有权
标题翻译：大气压力等离子体处理系统
公开(公告)号：JP2004014631A
公开(公告)日：2004-01-15
申请号：JP2002163225
申请日：2002-06-04
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： TAKEI HIDEO , SAKIO SUSUMU , ISHIBASHI AKIRA , ISHIKAWA MICHIO
IPC分类号： H05H1/24 , B01J19/08 , C23C16/44 , H01L21/205 , H01L21/3065 , H05H1/46
CPC分类号： C21D1/09
摘要： PROBLEM TO BE SOLVED: To provide an atmospheric pressure plasma processing system capable of processing an object efficiently and continuously by providing a plurality of plasma heads. SOLUTION: A plurality of atmospheric pressure plasma heads are provided and each atmospheric pressure plasma head is provided with at least a pair of electrodes arranged interdigitally. At least one of a pair of electrodes is coated or sealed with a dielectric, and an AC power is applied between the groups of pair electrodes. COPYRIGHT: (C)2004,JPO

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