专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JP2011035263A Method and device for forming texture for solar cell using natural oxide film 审中-公开
标题翻译：使用天然氧化膜形成太阳能电池纹理的方法和装置
公开(公告)号：JP2011035263A
公开(公告)日：2011-02-17
申请号：JP2009181631
申请日：2009-08-04
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： SAKAO YOSUKE , TAKEI HIDEO , IKEDA SATOSHI , SATO MUNEYUKI , MIZUNO KENJI , SUZUKI MINORU , KAWAI TOSHIHIRO , ITO TSUTOMU
IPC分类号： H01L31/04
CPC分类号： Y02E10/50
摘要： PROBLEM TO BE SOLVED: To provide a method and a device for forming a texture for a solar cell using a natural oxide film that forms the texture using a deposition (deposit layer) of SiO
2 as a self-mask by two gas systems.
SOLUTION: The two gas systems of a chlorine gas and an oxygen gas are used to form the texture on a surface of a substrate used to manufacture a crystal-based solar cell, and the texture is formed by using the deposition of SiO
2 produced during etching of the substrate as the self-mask.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种使用使用SiO 2 SB（2）的沉积（沉积层）形成纹理的天然氧化膜形成太阳能电池的织构的方法和装置，两个气体系统的自我掩蔽。解决方案：使用氯气和氧气的两种气体系统在用于制造晶体太阳能电池的基板的表面上形成纹理，并且通过使用SiO 在作为自掩模的衬底的蚀刻期间产生的 2 。版权所有（C）2011，JPO＆INPIT

2. 发明专利

JP2011035262A Processing method and processing apparatus for manufacture of crystal-based solar cell 审中-公开
标题翻译：基于晶体的太阳能电池的制造方法和加工装置
公开(公告)号：JP2011035262A
公开(公告)日：2011-02-17
申请号：JP2009181627
申请日：2009-08-04
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： SAKAO YOSUKE , TAKEI HIDEO , SATO MUNEYUKI , SUZUKI MINORU , ITO TSUTOMU , KAWAI TOSHIHIRO , MATSUMOTO KOJI , OMORI MIKI
IPC分类号： H01L31/04
CPC分类号： Y02E10/50
摘要： PROBLEM TO BE SOLVED: To provide a processing method and a processing apparatus that perform processes from removal of a damage layer of a substrate formed during slicing to texture formation step together in a lump through dry etching. SOLUTION: In the dry etching processing in which a substrate electrode mounted with a substrate, used to manufacture the crystal-based solar cell, to be subjected to etching processing is provided in a vacuum processing chamber and the substrate mounted on the substrate electrode is etched, the step of removing the damage layer formed when a surface of the substrate is sliced and the step of forming a texture on the surface of the substrate having the damage layer removed are carried out successively in the vacuum processing chamber. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种处理方法和处理装置，其通过干法蚀刻一次性地进行将切片期间形成的基板的损伤层除去纹理形成步骤的处理。解决方案：在真空处理室和安装在基板上的基板上设置用于制造晶体太阳能电池的用于制造晶体太阳能电池的基板的基板电极的干式蚀刻处理电极被蚀刻，在真空处理室中连续地执行去除在衬底的表面被切割时形成的损伤层的步骤和在具有损伤层的衬底的表面上形成纹理的步骤。版权所有（C）2011，JPO＆INPIT

3. 发明专利

JP2010263049A Dry etching apparatus 审中-公开
标题翻译：干蚀设备
公开(公告)号：JP2010263049A
公开(公告)日：2010-11-18
申请号：JP2009112264
申请日：2009-05-01
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： IKEDA SATOSHI , TAKEI HIDEO , SATO MUNEYUKI , SAKAO YOSUKE , MIZUNO KENJI , SUZUKI MINORU , KAWAI TOSHIHIRO , ITO TSUTOMU
IPC分类号： H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a stable process by restraining discharge of those other than the process and eliminating power losses and abnormal discharges, and to provide a dry etching apparatus for improving an etching rate. SOLUTION: In the dry etching apparatus, a shower plate 15 for diffusing process gas from process gas introduction systems 17, 18, 19 is provided at a top-board-side position of a vacuum treatment chamber 11 that opposes a substrate electrode 13 attached to a substrate 12 to be etched while being provided in the vacuum treatment chamber 11, and a perforated discharge prevention plate 16 is provided at space between the top board 11a of the vacuum treatment chamber 11 and the shower plate 15. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：通过抑制除了工艺以外的那些放电，并且消除功率损耗和异常放电来提供稳定的工艺，并提供用于提高蚀刻速率的干式蚀刻装置。解决方案：在干蚀刻装置中，在真空处理室11的与基板电极相对的顶板侧位置处设置用于将处理气体引入系统17,18,19的处理气体扩散的喷淋板15 13，其被设置在真空处理室11中被蚀刻的基板12上，并且在真空处理室11的顶板11a和喷淋板15之间的空间设置有穿孔防止排放板16。版权所有（C）2011，JPO＆INPIT

4. 发明专利

JP2010263048A Dry etching apparatus 有权
标题翻译：干蚀设备
公开(公告)号：JP2010263048A
公开(公告)日：2010-11-18
申请号：JP2009112263
申请日：2009-05-01
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： IKEDA SATOSHI , TAKEI HIDEO , SATO MUNEYUKI , SAKAO YOSUKE , MIZUNO KENJI , SUZUKI MINORU , KAWAI TOSHIHIRO , ITO TSUTOMU
IPC分类号： H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a dry etching apparatus for removing harmful residual process gas efficiently and safely when returning a vacuum treatment chamber to the atmosphere by detecting the presence or absence of the residual process gas that may be discharged when returning the vacuum treatment chamber to the atmosphere for releasing to take out an already treated substrate after dry etching. SOLUTION: The dry etching apparatus includes: the vacuum treatment chamber including an exhaust system and a gas introduction system; a gate valve provided at a carry-in/carry-out opening of the vacuum treatment chamber; a case for discharging residual gas provided while surrounding the gate valve outside the gate valve; and an exhaust pipe connected to the case for discharging residual gas. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种干法蚀刻装置，用于通过检测在返回真空处理室时可能被排出的残留处理气体的存在或不存在而将真空处理室返回到大气中时有效和安全地去除有害残留工艺气体真空处理室到大气中以释放以在干蚀刻后取出已经处理的基材。干法蚀刻装置包括：真空处理室，包括排气系统和气体导入系统; 设置在真空处理室的进/出口的闸阀; 用于排出在闸阀外部围绕闸阀设置的残留气体的情况; 以及连接到用于排出残留气体的壳体的排气管。版权所有（C）2011，JPO＆INPIT

5. 发明专利

JP2009266888A Etching apparatus 有权
标题翻译：蚀刻装置
公开(公告)号：JP2009266888A
公开(公告)日：2009-11-12
申请号：JP2008111469
申请日：2008-04-22
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： SUZUKI MINORU , MIYAJIMA YOSHIMASA
IPC分类号： H01L21/302
摘要： PROBLEM TO BE SOLVED: To provide an etching apparatus capable of reducing consumption of a reactive gas.
SOLUTION: The etching apparatus supplies xenon difluoride gas prepared by evaporating solid xenon difluoride in a cylinder 15 to an etching chamber 11 and etches a sample W conveyed into the chamber 11. The etching apparatus includes a stage 21 for partitioning a processing space 22 movably carried in the etching chamber 11 for etching the sample W and a reservoir space 23 for temporarily reserving the xenon difluoride gas supplied to the processing space 22 and also allowing no xenon difluoride gas to flow between the processing space 22 and the reservoir space 23. The apparatus further includes a pipe 45 having a valve 45a for connecting between the processing space 22 and the reservoir space 23 and a controller 16 for controlling the valve 45a to open/close to supply the gas to the processing space 22.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供能够降低反应性气体的消耗的蚀刻装置。解决方案：蚀刻装置提供通过将圆筒15中的固体氙二氟化物蒸发到蚀刻室11而制备的氙二氟化物气体，并蚀刻输送到室11中的样品W.蚀刻装置包括用于分隔处理空间 22可移动地携带在用于蚀刻样品W的蚀刻室11中，以及用于临时保留供应到处理空间22的氙气氟化物气体的储存空间23，并且也不允许氙二氟化物气体在处理空间22和储存空间23之间流动该设备还包括管45，其具有用于连接处理空间22和储存空间23的阀45a和用于控制阀45a以打开/关闭以将气体供应到处理空间22的控制器16。版权所有（C）2010，JPO＆INPIT

6. 发明专利

JP2012184481A Vacuum integrated substrate processing apparatus and film deposition method 有权
标题翻译：真空集成基板加工装置和薄膜沉积方法
公开(公告)号：JP2012184481A
公开(公告)日：2012-09-27
申请号：JP2011049615
申请日：2011-03-07
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： OMORI MIKI , SUZUKI MINORU , HONDA KAZUHIRO , ZAMA HIDEAKI , KUBO MASASHI
IPC分类号： C23C16/44 , C23C16/02 , C23C16/40 , H01L21/302 , H01L21/31 , H01L21/316 , H01L21/677
摘要： PROBLEM TO BE SOLVED: To provide: a vacuum integrated substrate processing apparatus for solving a problem of air exposure after release etching, for example, for fabricating a MEMS device; and a film deposition method.SOLUTION: A vacuum integrated substrate processing apparatus includes: a polygonal conveyance chamber 11; and a release etching apparatus 12, an ALD apparatus 13, a load lock chamber 18 and the like, which are connected to each side of the polygon, respectively. Release etching and ALD deposition are performed in vacuum integrated process. Thus, electrical characteristics and optical characteristics in a device finally obtained is improved and the production yield of a display can be also improved.
摘要翻译：要解决的问题：提供：一种用于解决在剥离蚀刻之后的空气暴露问题的真空集成基板处理装置，例如用于制造MEMS装置; 和成膜方法。解决方案：真空一体化基板处理装置包括：多边形输送室11; 以及分别与多边形的每一侧连接的剥离蚀刻装置12，ALD装置13，装载锁定室18等。在真空集成过程中进行释放蚀刻和ALD沉积。因此，最终获得的装置中的电特性和光学特性得到改善，并且也可以提高显示器的产量。版权所有（C）2012，JPO＆INPIT

7. 发明专利

JP2012126977A Vacuum film forming apparatus and film deposition method 审中-公开
标题翻译：真空膜形成装置和膜沉积方法
公开(公告)号：JP2012126977A
公开(公告)日：2012-07-05
申请号：JP2010281025
申请日：2010-12-16
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： OMORI MIKI , SUZUKI MINORU , MIYAJIMA YOSHIMASA , KUBO MASASHI , KIYOTA TETSUJI , HONDA KAZUHIRO , ZAMA HIDEAKI
IPC分类号： C23C16/455 , C23C16/44 , H01L21/31 , H01L21/316
摘要： PROBLEM TO BE SOLVED: To provide a vacuum film forming apparatus which achieves shorter discharge time of a raw material gas after adsorption/reaction to increase substitution efficiency and utilization efficiency of the raw material gas and easily treats a thin film deposited on objects other than a treatment target, and a film deposition method.SOLUTION: The vacuum film forming apparatus 1 carries out film deposition through reaction of the raw material gas on the treatment target S placed on an ascending and descending support stage located inside a reaction chamber. The apparatus 1 has a double-structured chamber comprising: an outer chamber 11 that is composed of an outer wall of the vacuum film forming apparatus 1 and is equipped with an openable and closable top plate 11a; and an inner chamber 12 that is a reaction chamber installed in a lower part of the outer chamber 11 and is equipped with an openable and closable top plate 12a. A gas nozzle 15 for supplying the raw material gas to the inner chamber 12 is installed inside the inner chamber 12 so that it becomes parallel to a surface of the treatment target S. The apparatus 1 is structured so that the film is deposited on the treatment target S. Film deposition is carried out using the apparatus.
摘要翻译：要解决的问题：提供一种真空成膜装置，其在吸附/反应之后实现原料气体的放电时间更短，以提高原料气体的替代效率和利用效率，并且容易地处理沉积在物体上的薄膜除了处理对象以外，还可以使用成膜方法。解决方案：真空成膜装置1通过原料气体反应在位于反应室内的升降支撑台上的处理对象物S上进行膜沉积。装置1具有双重结构的室，包括：外室11，其由真空成膜装置1的外壁构成，并具有开闭的顶板11a; 以及内部室12，其是安装在外部室11的下部并且设置有可开启和关闭的顶板12a的反应室。用于将原料气体供给到内部室12的气体喷嘴15安装在内部室12的内部，使其变得平行于处理对象物S的表面。设备1被构造成使得膜在处理目标S.使用该装置进行膜沉积。版权所有（C）2012，JPO＆INPIT

8. 发明专利

JP2010263052A Substrate clamping apparatus for vacuum treatment apparatus 审中-公开
标题翻译：用于真空处理设备的基板夹紧装置
公开(公告)号：JP2010263052A
公开(公告)日：2010-11-18
申请号：JP2009112270
申请日：2009-05-01
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： IKEDA SATOSHI , TAKEI HIDEO , SATO MUNEYUKI , SAKAO YOSUKE , MIZUNO KENJI , SUZUKI MINORU , KAWAI TOSHIHIRO , ITO TSUTOMU , MATSUMOTO KOJI , OMORI MIKI
IPC分类号： H01L21/683
摘要： PROBLEM TO BE SOLVED: To provide a substrate clamping apparatus for a vacuum treatment apparatus that reduces dimensions of the inside of a vacuum treatment chamber to those required for vacuum treatment, and holds a substrate and a tray placed on the substrate so that they are operated easily and controlled. SOLUTION: At least two clamp bodies are provided, which engage the substrate to be treated in the vacuum treatment chamber or the tray for placing the substrate to at least two opposing parts of the substrate or a peripheral section of the tray for placing the substrate. The substrate or the tray for placing the substrate is held by press adjustable independently on a substrate holder by at least one elevation pin that is connected to each clamp body and elevates the clamp body. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于真空处理设备的基板夹紧装置，其将真空处理室的内部尺寸减小到真空处理所需的尺寸，并且保持放置在基板上的基板和托盘，使得它们操作容易和受控。解决方案：提供至少两个夹具体，其在真空处理室中接合要处理的基板或用于将基板放置到基板的至少两个相对部分或托盘的周边部分以放置底物。用于放置基板的基板或托盘通过可通过至少一个连接到每个夹具主体并提升夹具主体的至少一个仰角的按压可调节地保持在基板保持器上。版权所有（C）2011，JPO＆INPIT

9. 发明专利

JP2010027795A Method for etching organic thin film 审中-公开
标题翻译：蚀刻有机薄膜的方法
公开(公告)号：JP2010027795A
公开(公告)日：2010-02-04
申请号：JP2008186296
申请日：2008-07-17
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： TAKEI HIDEO , IKEDA SATOSHI , SATO MUNEYUKI , SUZUKI MINORU , ITO TSUTOMU
IPC分类号： H01L21/3065 , H01L51/50 , H05B33/10
摘要： PROBLEM TO BE SOLVED: To provide a method for etching an organic thin film without leaving residue of aluminium. SOLUTION: The organic thin film is brought into contact with oxygen gas plasma by introducing the oxygen gas plasma into an etching chamber 11 while including chlorine components and boron components into the internal atmosphere of the chamber. The chlorine components and boron components are activated in the oxygen gas plasma, and the organic material is oxidized by the oxygen plasma into a gas. When the resultant gas is removed, aluminum oxides generated by the oxygen plasma are deoxidized by the boron components to generate metal aluminum, which reacts with the chlorine components. The resultant reaction products are removed by evacuation. Thus, etching can be performed without leaving residue of aluminium. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种在不留下铝残留的情况下蚀刻有机薄膜的方法。解决方案：通过将氧气等离子体引入蚀刻室11，同时将氯成分和硼成分包含在室的内部气氛中，使有机薄膜与氧气等离子体接触。氯组分和硼组分在氧气等离子体中被活化，有机材料被氧等离子体氧化成气体。当除去所得气体时，由氧等离子体产生的氧化铝被硼组分脱氧以产生与氯组分反应的金属铝。通过抽空除去所得反应产物。因此，可以进行蚀刻而不留下铝残留物。版权所有（C）2010，JPO＆INPIT

10. 发明专利

JP2012126976A Vacuum film forming apparatus, and film deposition method 审中-公开
标题翻译：真空膜成膜装置和薄膜沉积方法
公开(公告)号：JP2012126976A
公开(公告)日：2012-07-05
申请号：JP2010281024
申请日：2010-12-16
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： OMORI MIKI , SUZUKI MINORU , HONDA KAZUHIRO , ZAMA HIDEAKI , KUBO MASASHI
IPC分类号： C23C16/455 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To provide a vacuum film forming apparatus capable of inhibiting deterioration of a valve, a vacuum pump, etc. installed at the downstream side of a reaction chamber where a film is deposited on a substrate by alternately feeding a plurality of raw material gases.SOLUTION: The vacuum film forming apparatus 1 has: the reaction chamber where the substrate is placed; a first raw material gas supplying means for supplying a first raw material gas from a raw material supply source 22 to the reaction chamber; a second raw material gas supplying means for supplying a second raw material gas, which reacts with the first raw material gas, from a raw material supply source 42 to the reaction chamber; a raw material gas control means for controlling the flows of the first and second raw material gases so as to alternately supply the first and second raw material gases to the reaction chamber; a trap 61 to which the raw material gases discharged from the reaction chamber are supplied; and a means for achieving direct supply of the second raw material gas from the raw material supply source 42 to the trap 61 without passing through the reaction chamber.
摘要翻译：要解决的问题：提供一种能够抑制阀，真空泵等的劣化的真空成膜装置，该真空成膜装置安装在反应室的下游侧，其中膜通过交替进料而沉积在基板上多种原料气体。解决方案：真空成膜装置1具有：放置基板的反应室; 第一原料气体供给装置，用于将来自原料供给源22的第一原料气体供给至反应室; 第二原料气体供给装置，用于将与第一原料气体反应的第二原料气体从原料供给源42供给到反应室; 原料气体控制装置，用于控制第一和第二原料气体的流动，以便将第一和第二原料气体交替地供应到反应室; 从反应室排出的原料气体供给的捕集器61; 以及用于将第二原料气体从原料供给源42直接供给到捕集器61的装置，而不通过反应室。版权所有（C）2012，JPO＆INPIT

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式