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1. 发明专利

JP2012126977A Vacuum film forming apparatus and film deposition method 审中-公开
标题翻译：真空膜形成装置和膜沉积方法
公开(公告)号：JP2012126977A
公开(公告)日：2012-07-05
申请号：JP2010281025
申请日：2010-12-16
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： OMORI MIKI , SUZUKI MINORU , MIYAJIMA YOSHIMASA , KUBO MASASHI , KIYOTA TETSUJI , HONDA KAZUHIRO , ZAMA HIDEAKI
IPC分类号： C23C16/455 , C23C16/44 , H01L21/31 , H01L21/316
摘要： PROBLEM TO BE SOLVED: To provide a vacuum film forming apparatus which achieves shorter discharge time of a raw material gas after adsorption/reaction to increase substitution efficiency and utilization efficiency of the raw material gas and easily treats a thin film deposited on objects other than a treatment target, and a film deposition method.SOLUTION: The vacuum film forming apparatus 1 carries out film deposition through reaction of the raw material gas on the treatment target S placed on an ascending and descending support stage located inside a reaction chamber. The apparatus 1 has a double-structured chamber comprising: an outer chamber 11 that is composed of an outer wall of the vacuum film forming apparatus 1 and is equipped with an openable and closable top plate 11a; and an inner chamber 12 that is a reaction chamber installed in a lower part of the outer chamber 11 and is equipped with an openable and closable top plate 12a. A gas nozzle 15 for supplying the raw material gas to the inner chamber 12 is installed inside the inner chamber 12 so that it becomes parallel to a surface of the treatment target S. The apparatus 1 is structured so that the film is deposited on the treatment target S. Film deposition is carried out using the apparatus.
摘要翻译：要解决的问题：提供一种真空成膜装置，其在吸附/反应之后实现原料气体的放电时间更短，以提高原料气体的替代效率和利用效率，并且容易地处理沉积在物体上的薄膜除了处理对象以外，还可以使用成膜方法。解决方案：真空成膜装置1通过原料气体反应在位于反应室内的升降支撑台上的处理对象物S上进行膜沉积。装置1具有双重结构的室，包括：外室11，其由真空成膜装置1的外壁构成，并具有开闭的顶板11a; 以及内部室12，其是安装在外部室11的下部并且设置有可开启和关闭的顶板12a的反应室。用于将原料气体供给到内部室12的气体喷嘴15安装在内部室12的内部，使其变得平行于处理对象物S的表面。设备1被构造成使得膜在处理目标S.使用该装置进行膜沉积。版权所有（C）2012，JPO＆INPIT

2. 发明专利

JP2009266888A Etching apparatus 有权
标题翻译：蚀刻装置
公开(公告)号：JP2009266888A
公开(公告)日：2009-11-12
申请号：JP2008111469
申请日：2008-04-22
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： SUZUKI MINORU , MIYAJIMA YOSHIMASA
IPC分类号： H01L21/302
摘要： PROBLEM TO BE SOLVED: To provide an etching apparatus capable of reducing consumption of a reactive gas.
SOLUTION: The etching apparatus supplies xenon difluoride gas prepared by evaporating solid xenon difluoride in a cylinder 15 to an etching chamber 11 and etches a sample W conveyed into the chamber 11. The etching apparatus includes a stage 21 for partitioning a processing space 22 movably carried in the etching chamber 11 for etching the sample W and a reservoir space 23 for temporarily reserving the xenon difluoride gas supplied to the processing space 22 and also allowing no xenon difluoride gas to flow between the processing space 22 and the reservoir space 23. The apparatus further includes a pipe 45 having a valve 45a for connecting between the processing space 22 and the reservoir space 23 and a controller 16 for controlling the valve 45a to open/close to supply the gas to the processing space 22.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供能够降低反应性气体的消耗的蚀刻装置。解决方案：蚀刻装置提供通过将圆筒15中的固体氙二氟化物蒸发到蚀刻室11而制备的氙二氟化物气体，并蚀刻输送到室11中的样品W.蚀刻装置包括用于分隔处理空间 22可移动地携带在用于蚀刻样品W的蚀刻室11中，以及用于临时保留供应到处理空间22的氙气氟化物气体的储存空间23，并且也不允许氙二氟化物气体在处理空间22和储存空间23之间流动该设备还包括管45，其具有用于连接处理空间22和储存空间23的阀45a和用于控制阀45a以打开/关闭以将气体供应到处理空间22的控制器16。版权所有（C）2010，JPO＆INPIT

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