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1. 发明专利

JP2003197607A METHOD AND APPARATUS FOR ETCHING PYROELECTRIC AND HIGH DIELECTRIC MATERIAL 审中-公开
公开(公告)号：JP2003197607A
公开(公告)日：2003-07-11
申请号：JP2001393513
申请日：2001-12-26
申请人： ULVAC CORP
发明人： KAGA KOJI , HAYASHI TOSHIO , KATO TOSHIO , IGARASHI TAKESHI , MAEBA KOJI
IPC分类号： G02F1/03 , G02F1/055 , H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a method and apparatus for etching a high dielectric substrate without generating a crack. SOLUTION: The device for conducting etching by forming high density plasma with the use of microwaves or high frequency waves, is provided with a substrate tray 2 made of aluminum. The tray 2 is provided with; a receiving recess, which is provided on the front face, for receiving a substrate 3 to be processed; a rear recess which is formed on the rear side, i.e., at the position opposite to the receiving recess; a peripheral contact surface which is formed around the rear recess, for contacting a substrate electrode 1; and a plurality of gas ducts that extend from the rear recess to the receiving recess. The device is arranged such that the substrate 3, when mounted on the electrode 1, is fixed onto the tray 2 by clamp rings, and that cooling gas is made to mainly flow onto the rear side of the tray 2. COPYRIGHT: (C)2003,JPO

2. 发明专利

JP2002343775A ETCHING DEVICE 失效
公开(公告)号：JP2002343775A
公开(公告)日：2002-11-29
申请号：JP2001149825
申请日：2001-05-18
申请人： ULVAC CORP
发明人： HAYASHI TOSHIO , CHIN TAKASHI , SUGITA KICHIHEI
IPC分类号： H05H1/46 , B01J19/08 , H01L21/302 , H01L21/3065 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To provide an etching device which can have its structure simplified, generate plasma with high efficiency without any problem of interference, and obtain excellent vertical etching characteristics. SOLUTION: A ground electrode provided opposite a substrate electrode is constituted as a counter electrode placed in a potential-floated state by dielectric, and part of high-frequency electric power for induced discharge is supplied to the counter electrode, by branching high-frequency electric power to the counter electrode through a capacitor from an arbitrary position of a high-frequency antenna coil causing the induced discharge to generate a self-bias at the counter electrode.

3. 发明专利

JP2001338909A ETCHING METHOD OF ORGANIC FILM, METHOD OF FABRICATION AND PATTERN FORMATION OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JP2001338909A
公开(公告)日：2001-12-07
申请号：JP2000155843
申请日：2000-05-26
申请人： MATSUSHITA ELECTRIC IND CO LTD , ULVAC CORP
发明人： NAKAGAWA HIDEO , HAYASHI TOSHIO , MORIKAWA YASUHIRO
IPC分类号： G03F7/40 , H01L21/027 , H01L21/302 , H01L21/3065 , H01L21/311 , H01L21/768
摘要： PROBLEM TO BE SOLVED: To make a cross section of a concavity tapered in etching method of organic film. SOLUTION: The organic film is etched with plasma which is generated by a mixed gas. The mixed gas is of a gas of which the main component is a compound of carbon, hydrogen and nitrogen, such as methylamine gas and a gas which contains nitrogenous component, such as nitrogenous gas.

4. 发明专利

JP2001271163A MAGNETIC NEUTRAL LOOP DISCHARGE SPUTTERING SYSTEM 失效
公开(公告)号：JP2001271163A
公开(公告)日：2001-10-02
申请号：JP2000084760
申请日：2000-03-24
申请人： ULVAC CORP
发明人： MURAOKA KATSUNORI , UCHINO KIICHIRO , SEI RETSUBUN , UCHIDA TAIJIROU , HAYASHI TOSHIO , ITO MASAHIRO
IPC分类号： C23C14/35 , H01L21/203 , H01L21/285
摘要： PROBLEM TO BE SOLVED: To provide a sputtering system using a capacitively coupled type of a new NLD(neutral loop discharge) plasma. SOLUTION: The sputtering system is provided with sputter electrodes constituted in such a way that a plurality of pairs of magnetic field generator on the same the line as one of magnetic force, coaxially arranged across a sputtering target, are provided; the directions of the adjacent line of magnetic force, are set to be opposite to each other; and a magnetic field zero line is formed in a direction perpendicular to the surface of the sputtering target midway between the adjacent pairs of the magnetic field generator.

5. 发明专利

JP2000046680A LEAKAGE DETECTION METHOD AND DEVICE UTILIZING MAGNETIC FILED DEFLECTING MASS SPECTROGRAPH TUBE 失效
公开(公告)号：JP2000046680A
公开(公告)日：2000-02-18
申请号：JP21434598
申请日：1998-07-29
申请人： ULVAC CORP
发明人： TAKAHASHI NAOKI , CHIN KOKUKA , HAYASHI TOSHIO
IPC分类号： G01N27/62 , G01M3/20
摘要： PROBLEM TO BE SOLVED: To reduce a noise for lowering the measurement limit of a magnetic field deflecting mass spectrograph tube and improving the detection capability thereof, and provide a device suitable for the improved capability. SOLUTION: This method utilizes a magnetic field deflecting mass spectrograph tube 7 equipped with an ionization chamber 11 for ionizing a gas atom or molecular coming out of the leakage part of a leakage detection object 1, by means of electrons flowing from a filament 9 to a grid 8, and a detection chamber 15 for applying magnetic field deflection to and selecting the ions from the ionizing chamber 11, and detecting an ion quantity by means of an ion collector 14. Also, the ion quantity detected with the ion collector 14 is shown on a display part 18 for leakage detection. In this case, a reference signal is applied to the grid 18 for modulating the energy of ions generated in the ionization chamber 11 and a signal detected with the collector 14 and inputted to the display part 18 is converted to components synchronous and not synchronous with the reference signal by use of a phase discriminator 22. Then, the component not synchronous in a low pass filter 23 is removed, thereby improving an S/N ratio and lowering a detection limit.

6. 发明专利

JP2000036399A MAGNETIC NEUTRAL BEAM DISCHARGING PLASMA PROCESSING DEVICE FOR FORMING LARGE-SIZED MASK 失效
公开(公告)号：JP2000036399A
公开(公告)日：2000-02-02
申请号：JP20515498
申请日：1998-07-21
申请人： ULVAC CORP
发明人： IKEDA HITOSHI , CHIN TAKASHI , ITO MASAHIRO , HAYASHI TOSHIO
IPC分类号： H05H1/46 , C23C16/50 , H01L21/302 , H01L21/3065 , H01L21/31 , H01L21/677 , H01L21/68
摘要： PROBLEM TO BE SOLVED: To form fine mask patterns for a large-size wafer while controlling the lead-in condition of the plasma to be applied to a substrate electrode so as to be even in a substrate surface by changing condition of a neutral magnetic field area NLD at the time of etching the substrate. SOLUTION: A mask substrate 21 is installed on a bias substrate electrode 20 of an etching process chamber 2, and the gas of a plasma generation chamber 1 is led into the process chamber 2, and the process gas pressure is set at the predetermined value by an automatic pressure adjusting device 24. After flowing the set current to electromagnets 12, 13, 14 and applying the set voltage to the bias substrate electrode 20, the set power is applied to a high frequency coil 15 so as to lead the magnetic neutral beam discharging plasma generated in the plasma generation chamber 1 into the electrode 20, and patterning of etching film of the substrate 21 is performed. With this structure, the vertical component energy of the led NLD plasma is utilized, and the NLD condition is changed so as to evenly control the leading condition of the plasma into the bias substrate electrode side in the substrate surface, and excellent distribution and pattern are thereby obtained.

7. 发明专利

JP2000011946A SMALL MAGNETIC DEFLECTION MASS SPECTROMETER TUBE AND ITS MANUFACTURE 失效
公开(公告)号：JP2000011946A
公开(公告)日：2000-01-14
申请号：JP17177198
申请日：1998-06-18
申请人： ULVAC CORP
发明人： TAKAHASHI NAOKI , HAYASHI TOSHIO
IPC分类号： G01N27/62 , H01J49/30
摘要： PROBLEM TO BE SOLVED: To provide a small magnetic deflection mass spectrometer tube that can provide uniform sensitivity and resolution, is high in processing accuracy and suited for mass production. SOLUTION: A small casing of a magnetic deflection mass spectrometer tube is made of a block 12 of a material of the casing 1 by means of cut machining. Two circular holes 19, 20 each having a center axis line in accordance with the ion turning radius of a magnetic field deflection type analyzer are formed in the block 12 by means of cutting, and a through-hole 23 communicating with both the circular holes is formed inside the intersecting part of the center axis lines by cutting. A mounting part of the magnetic field deflection spectrometer is formed by cutting the outside peripheral surface of the intersecting part of the block 12 into a flat form. The block 12 may be of two pieces.

8. 发明专利

JPH11330052A REACTIVE ION ETCHING METHOD AND APPARATUS THEREOF 失效
公开(公告)号：JPH11330052A
公开(公告)日：1999-11-30
申请号：JP13556698
申请日：1998-05-18
申请人： ULVAC CORP
发明人： CHIN TAKASHI , ITO MASAHIRO , HAYASHI TOSHIO
IPC分类号： H05H1/46 , C23F4/00 , H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To enable adaptation to fine machining at specified width by obtaining the etching condition to maximize the relative values of the peak intensities of CHF2 ions with respect to the intensities of monitored various kinds of ions and optimizing the etching sectional shape near the obtained etching condition. SOLUTION: A mass spectrometer 14 is disposed near a substrate electrode to monitor various kinds of ions generated in a plasma, the etching condition is obtained so as to maximize the relative values of the peak intensities of CHF2 ions with respect to the intensities of various kinds of ions, the etching sectional shape is optimized near the obtained etching condition, which is composed of a gas mix ratio, discharge power and pressure, the gas mix ratio is set so as to maximize the relative value of the peak intensities of CHF2 ions, and one kind of the mixed used gases is hydrogen or carbon fluoride which contain hydrogen. As a result, this method can be adapted to fine machining of 0.3 μm or smaller width.

9. 发明专利

JPH10241592A ION BEAM IRRADIATION DEVICE 失效
公开(公告)号：JPH10241592A
公开(公告)日：1998-09-11
申请号：JP4401697
申请日：1997-02-27
申请人： ULVAC CORP
发明人： SOTOHANE YOSHIYUKI , HAYASHI TOSHIO , ITO MASAHIRO , OGATA SEIJI , SAKURADA YUZO , UCHIDA TAIJIROU
IPC分类号： G03F7/20 , H01J27/18 , H01J37/08 , H01J37/317 , H01L21/027 , H01L21/203 , H01L21/265
摘要： PROBLEM TO BE SOLVED: To provide the plasma uniformity of a drawing electrode by mounting a plasma source as a plasma generation source based on magnetic neutral conductor discharging and controlling the generation position of a magnetic neutral conductor. SOLUTION: A high frequency electric field is provided into a vacuum from the outside of the dielectric cylindrical partition wall of a cylindrical plasma generation chamber 3, gas introduced into the vacuum is discharged and, by controlling the position of a magnetic neutral conductor 8 by three coils 5, 6 and 7, a plasma is controlled. In the exit of a plasma communicated from the plasma generation chamber 3 to a substrate treating chamber 4, a first electrode 11 having a number of orifices of the same potential as that of the plasma generation chamber 3 is disposed, orifices coaxial to these orifices are provided in its outside and second and third electrodes 12 and 13 are provided. Ions entering from the plasma generation chamber 3 to the orifices of the first electrode 11 are drawn out by an electric field between the first and second electrodes 11 and 12. The drawn-out ions are projected to a substrate 15 on a substrate holder 14 maintained at a grounding potential.

10. 发明专利

JPH10229071A METHOD AND SYSTEM FOR DRY ETCHING 失效
公开(公告)号：JPH10229071A
公开(公告)日：1998-08-25
申请号：JP3069297
申请日：1997-02-14
申请人： ULVAC CORP
发明人： CHIN TAKASHI , HAYASHI TOSHIO , UCHIDA TAIJIROU
IPC分类号： C23F4/00 , H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To realize fine machining of specified width or finer by introducing an etching assist gas from the upper part of a vacuum chamber using a magnetic neutral beam discharge etching system and introducing an etching main gas to the substrate side in the vicinity of magnetic neutral beam. SOLUTION: When the power of a high frequency power supply 8 for generating plasma is 1kW, the power of a high frequency power supply 11 for biasing a substrate is 500W, the pressure is 3mTorr, argon of 85sccm is employed as assist gas and C4 F8 of 15sccm is employed as an etching main gas, etching rate of a silicon oxide is 610nm/min and etching rate of silicon is 51nm/min. The selection ratio is 12 at that time. On the other hand, the main gas and the assist gas are introduced from the upper part of the chamber while being mixed, etching rate of silicon oxide is 590nm/min and etching rate of silicon is 98nm/min. The selection ratio is 6 at that time.

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