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1. 发明专利

JP2000011931A ION CURRENT DETECTION APPARATUS AND ION IMPLANTATION APPARATUS 失效
公开(公告)号：JP2000011931A
公开(公告)日：2000-01-14
申请号：JP17081298
申请日：1998-06-18
申请人： ULVAC CORP
发明人： OTSUKA YOSHIRO , MATSUURA MASAMICHI , SAKURADA YUZO
IPC分类号： H01J37/04 , H01J37/317 , H01L21/265
摘要： PROBLEM TO BE SOLVED: To provide a technique capable of measuring the ratio of ion kinds included in an ion beam. SOLUTION: An ion beam 32 which is incident from a main slit 14 is made incident on a main Faraday cup 43, a sub-slit 15 and an auxiliary Faraday cup 53 are formed in an ion current detector 10 for measuring ion current, and after the mass spectrometry analysis of an ion beam 33 incident from the sub-slit 15 is carried out, it is admitted into the auxiliary Faraday cup 53. Because the ratio of ions of a kind included in an ion beam 31 can be determined, the simulation of ion distribution in the implantation depth direction can be performed, when a shower-type ion implantation device 5 for executing ion implantation without carrying out the mass spectrometry analysis is used.

2. 发明专利

JPH11345586A ION INPLANTER AND ION IMPLANTATION 失效
公开(公告)号：JPH11345586A
公开(公告)日：1999-12-14
申请号：JP13778198
申请日：1998-05-01
申请人： ULVAC CORP
发明人： SAKURADA YUZO
IPC分类号： H01J37/317 , H01L21/265
摘要： PROBLEM TO BE SOLVED: To uniformly implant low-energy impurity ions into a semiconductor wafer at a large beam current and to control the condition of this implantation using one semiconductor chip in the wafer as the unit of implantation. SOLUTION: In this ion implantation, boron ions generated from an ion source 1 at an accelerating voltage of 1 kV are given an energy of 20 keV by an extraction electrode 2 having an extraction voltage of -19 kV, are transported through a beam line part 10B without diverging, decelerated by a decelerating electrode 6, and further decelerated to ground potential at a ground electrode to obtain an ion beam L with an energy of 1 keV. Next, the ion beam L is passed via a deflector 9 through a mask 12 placed nearby and is made to impinge on a chip in a wafer W moved to an incident position. In short, a platen 15 holding the wafer W is mechanically scanned in X and Y directions by a mechanical drive mechanism.

3. 发明专利

JPH11166478A REGENERATING METHOD FOR CRYOPUMP 失效
公开(公告)号：JPH11166478A
公开(公告)日：1999-06-22
申请号：JP33189997
申请日：1997-12-02
申请人： ULVAC KURAIO KK , ULVAC CORP
发明人： FURUYA SHINJI , TERAJIMA MITSUSHINA , MORIMOTO HIDETOSHI , NISHIBASHI TSUTOMU , KASHIMOTO KAZUHIRO , SAKURADA YUZO
IPC分类号： F04B37/08 , F04B37/16
摘要： PROBLEM TO BE SOLVED: To regenerate a cryopump free of a drop of effective exhausting speed originating from the conductance. SOLUTION: Suction holes of a plurality of cryopumps 4 and 5 capable of making exhaustion by coarse drawing pumps 27 and 28 are in direct opening installed in the wall surface constituting a space capable of sealing, and the air is exhausted by the coarse drawing pumps 27 and 28 while the space is sealed and a purge gas such as N2 etc., is left flowing in viscous flow condition out of a gas lead-in hole 31 furnished in the wall surface. A passage is provided for guiding charged particles passing through a magnet chamber 3, and ahead of this passage, the first cryopump 4 is installed which is equipped with a suction hole surrounding the passage and can evacuate the pump case by the coarse drawing pumps 27 and 28, and the suction hole of the second cryopump 5 capable of evacuating the pump case by the coarse drawing pumps is in direct opening installed in the wall surface in the position of magnet chamber 3, and the front and rear of the passage are shut by gate valves 6 and 7 and the purge gas is allowed to flow in from the gas lead-in hole.

4. 发明专利

JPH06281602A SURFACE ANALYZING AND ION IMPLANTING DEVICE 失效
公开(公告)号：JPH06281602A
公开(公告)日：1994-10-07
申请号：JP9235193
申请日：1993-03-26
申请人： ULVAC CORP
发明人： HIROSE MASATAKA , YOKOYAMA ARATA , ZUBINIEFU RAJIMUSUKII , AGAWA YOSHIAKI , SAKURADA YUZO
IPC分类号： G01N23/225 , H05H7/08
摘要： PURPOSE:To obtain a surface analyzing and ion implanting device which can perform both surface analysis and ion implantation with a compact constitution without taking out an ion-implanted sample into the air. CONSTITUTION:In a sample chamber 50, a goniometer 21 is provided and a sample which is irradiated with an ion beam arriving at the sample through collimated apertures 17a and 17b is held in a state where the sample is counterposed to the meter 21. In addition, a sample holder 112 is also provided in the chamber 50 so that the holder 12 can move between the ion implanting position and sample receiving and delivering position and can receive the sample attached to the front end section of a sample carrying rod 41 at the sample receiving and delivering position. The holder 112 can also transfer the sample from the sample receiving and delivering position and transfer the ion-implanted sample to a sample holding section by moving the rod 41 forward and backward after stopping at a position near the meter 21. Moreover, the holder 112 can take out the sample from a preparatory chamber 40 after surface analysis by receiving the sample with its front end section.

5. 发明专利

JPH0494049A ACCELERATING TUBE FOR LARGE CURRENT ION IMPLANTATION DEVICE 失效
公开(公告)号：JPH0494049A
公开(公告)日：1992-03-26
申请号：JP21017190
申请日：1990-08-10
申请人： ULVAC CORP
发明人： TSUKAGOSHI OSAMU , KATAGAWA TAKESHI , SAKURADA YUZO , HAYASHI TOMONAO
IPC分类号： H05H7/08 , C23C14/48 , G21K1/087 , G21K5/04 , H01J37/08 , H01J37/317 , H05H7/00
摘要： PURPOSE:To accelerate ion beams of large beam current and comparatively low energy while strongly converging them under not very large potential difference between electrodes by specifying an angle whereat each of the finger electrodes in a finger quadrupole portion looks out upon the central axis of an accelerating tube main body. CONSTITUTION:An accelerating-tube for a large-current ion implantation device consists of a first cylindrical electrode 1 and a second cylindrical electrode 2. Paired circular arc-shaped finger electrodes 1a, 1b of the first cylindrical electrode 1 and paired circular arc-shaped finger electrodes 2a, 2b of the second cylindrical electrode 2 are respectively fabricated to construct a quadrupole lens in such a manner that they may be positioned not only coaxially but also respectively in two flat-surfaces orthogonal to each other. The width of each of the circular arc-shaped finger electrodes on the circumference of a circle is set within the range of an angle of 10 deg. to 80 deg. whereat the electrode looks out upon the central axis of an accelerating tube main-body. By this construction, converging action required for the quadrupole lens can be made even if ion beams are spread to an extent of 70% of the diameter of the accelerating tube main-body.

6. 发明专利

JPH02155148A ION SOURCE 失效
公开(公告)号：JPH02155148A
公开(公告)日：1990-06-14
申请号：JP30807088
申请日：1988-12-06
申请人： ULVAC CORP
发明人： SUMIYA TORU , MATSUURA MASAMICHI , SENDA NAKAYA , SAKURADA YUZO , KUNIBE TOSHIHISA
IPC分类号： H01J27/20 , H01J37/08 , H01J37/317
摘要： PURPOSE:To make it possible to generate ion beams of a high melting point metal in large quantities by providing a rod-form filament and a metal filament in a plasma production chamber, and applying a voltage between the metal filament and the plasma production chamber to make the metal filament into a negative voltage. CONSTITUTION:In a plasma production chamber 1, a rod-form filament 4 and another metal filament 21 are provided, and a voltage is applied between the metal filament 21 and the plasma production chamber 1 to make the metal filament 21 into a negative voltage. And the metal filament 21 is spattered or etched by the ions in the plasma, to generate the ions of the metal filament 21, and the ions of the metal filament are also drawn out from an ion drawing- out port 3. As a result, metal ions, especially ion beams of a high melting point metal can be generated in large quantities.

7. 发明专利

JPH01246747A ION SOURCE 失效
公开(公告)号：JPH01246747A
公开(公告)日：1989-10-02
申请号：JP7572088
申请日：1988-03-29
申请人： ULVAC CORP
发明人： KAMIOKA HIDEAKI , SAKURADA YUZO
IPC分类号： C23C14/22 , C23C14/24 , H01J27/02 , H01J37/08
摘要： PURPOSE:To effectively enable ionizing irrespective of vaporizing temp. of a material to be ionized by providing a vessel for heating and vaporizing the material at a remote position not subjected to radiating heat from an ion generating chamber, and a means for cooling. CONSTITUTION:An ionized solid material 6 is stored in a vessel 5 and heated and vaporized by a heater 9, and cooled by a cooling means 12 if necessary. The vaporized material is fed to an ion generating chamber 2 through a piping system 8. The vessel is arranged apart from the chamber 2, so it is not subjected to the radiating heat upon ion generation. It is possible to ionize the material of which vaporizing temp. is relatively low and to cool the vessel upon necessity so as to improve the ionization efficiency.

8. 发明专利

JPH01232652A ION IMPLANTER 失效
公开(公告)号：JPH01232652A
公开(公告)日：1989-09-18
申请号：JP5641588
申请日：1988-03-11
申请人： ULVAC CORP
发明人： TSUKAGOSHI OSAMU , SAKURADA YUZO , KASHIMOTO KAZUHIRO
IPC分类号： H01J37/317 , H01J37/147
摘要： PURPOSE:To have uniform ion implantation by furnishing a deflection system, in which No.1 multi-polar electrostatic deflector and No.2 multi-polar electrostatic deflector are installed in specified arrangement, and a scanning control means for scanning in a regularly formed polygonal region having a certain number of edge members. CONSTITUTION:Multi-polar deflection voltage is impressed on electrodes of No, 1 multi-polar electrostatic deflector 6, while a deflection voltage in the same phase and similar waveform as to the waveform of this mentioned multi-polar deflection voltage is impressed on the mating electrodes of No.2 multi-polar electrostatic deflector 7. This voltage waveform includes an ion beam and a target 6 to scan a region in regular polygon having the same number of edge members or its multiple as the No.1, No.2 multi-polar electrostatic deflectors 6, 7. The same deflection voltage is impressed on the electrodes of No.1 deflector 6 and the mating electrodes of No. 2 deflector 7, and its voltage waveform is decided in the same manner as mentioned above.

9. 发明专利

JPH11288681A ION IMPLANTER AND ION IMPLANTING METHOD 失效
公开(公告)号：JPH11288681A
公开(公告)日：1999-10-19
申请号：JP10694998
申请日：1998-04-02
申请人： ULVAC CORP
发明人： SAKURADA YUZO
IPC分类号： H01J37/20 , H01J37/317 , H01L21/265
摘要： PROBLEM TO BE SOLVED: To provide an ion implanter and, an ion implanting method whereby a wafer having insufficient uniformity after ions are already implanted therein can be corrected. SOLUTION: An octapole scanner 6 which scans an ion beam at very small angles and a non-contact beam ammeter 8 are arranged at a beam line part 10B continuing after an ion beam interrupter 3 and an accelerating tube 4, at the rear stage of the mass separator 2 of a high voltage terminal 10A, and a beam limiting slit 9 and a wafer position detector 19 are provided at an end station part 10E. The area of a wafer W where the amount of implanting is insufficient is moved immediately below the beam limiting slit 9 by mechanical drive mechanisms 16, 17 by which a platen 13 holding the wafer position detector 19 and the wafer W is driven in X and Y directions, and scans are performed in the X and Y directions to implant ions for correction.

10. 发明专利

JPH11195385A ION SOURCE, AND ION BEAM EXTRACTION METHOD 失效
公开(公告)号：JPH11195385A
公开(公告)日：1999-07-21
申请号：JP36682597
申请日：1997-12-26
申请人： JAPAN RADIO CO LTD , ULVAC CORP
发明人： YAMAZAKI HAJIME , SUZUKI HIDEKAZU , TANIGUCHI TORU , SAKURADA YUZO
IPC分类号： C23C14/48 , H01J27/08 , H01J37/08 , H01J37/317 , H01L21/265
摘要： PROBLEM TO BE SOLVED: To provide an ion source and an ion beam extraction method to implant both Be-ions and O-ions without requiring change of the ion source. SOLUTION: A magnet is installed on an outer wall of a casing, its part around an ion beam extraction part is formed of magnetic material 8, a Be canal is installed on the ion beam extraction part in a cold cathode ion source, where a Be plate is included, and mixed gas of Ar and O is introduced to generate a plasma, so a beam line immediately after an extraction electrode 3 of the ion source is maintained at a high vacuum by a turbo pump 7 to extract Be-ions and O-ions.

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