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1. 发明专利

JP2013258383A Deposition method 有权
标题翻译：沉积方法
公开(公告)号：JP2013258383A
公开(公告)日：2013-12-26
申请号：JP2012135150
申请日：2012-06-14
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： IKEGAWA HIROAKI , UENISHI MASAHIKO , ISE MASAYUKI , OGAWA ATSUSHI
IPC分类号： H01L21/31 , C23C16/455 , H01L21/316
CPC分类号： H01L21/0262 , C23C16/40 , C23C16/402 , C23C16/403 , C23C16/405 , C23C16/45519 , C23C16/45551 , H01L21/68764
摘要： PROBLEM TO BE SOLVED: To enable a sufficient reaction between at least two reaction gases reacting with each other in a deposition method of depositing a reaction product of the two reaction gases on a substrate by alternately supplying the at least two reaction gases to the substrate.SOLUTION: A deposition method comprises: a step of supplying a first reaction gas from a first gas supply part to a first processing region and a second reaction gas which can react with the first reaction gas from a second gas supply part to a second processing region while separating the first processing region and the second processing region by supplying a separation gas from a separation gas supply part with rotating a rotary table; and a step of supplying the second reaction gas from the second gas supply part to the second processing region for a predetermined time period without supplying the reaction gas from the first gas supply part while separating the first processing region and the second processing region by supplying the separation gas from the separation gas supply part with rotating the rotary table.
摘要翻译：要解决的问题：为了使至少两个反应气体之间发生充分的反应，在沉积方法中，通过交替地将至少两种反应气体提供给基底将两种反应气体的反应产物沉积在基底上。解决方案：沉积方法包括：将第一反应气体从第一气体供应部分供应到第一处理区域的第二反应气体和可以与第一反应气体从第二气体供应部件反应到第二处理区域的第二反应气体同时通过从分离气体供应部分提供旋转旋转台的分离气体来分离第一处理区域和第二处理区域; 以及从第二气体供给部向第二处理区域供给第二反应气体达预定时间的步骤，而不会从第一气体供给部分供给反应气体，同时分离第一处理区域和第二处理区域，分离气体从分离气体供应部分旋转旋转台。

2. 发明专利

JP2017117943A 成膜装置审中-公开
公开(公告)号：JP2017117943A
公开(公告)日：2017-06-29
申请号：JP2015252081
申请日：2015-12-24
申请人：東京エレクトロン株式会社 , Tokyo Electron Ltd
发明人： IKEGAWA HIROAKI , WADA HIROYUKI , HISHITANI KATSUYUKI
IPC分类号： H01L21/31 , C23C16/455 , C23C16/511 , H05H1/46
CPC分类号： C23C16/511 , C23C16/4412 , C23C16/45544 , C23C16/45551 , C23C16/45578 , C23C16/4584 , H01L21/0217 , H01L21/02274 , H01L21/0228 , H01L21/68764
摘要：【課題】セミバッジ式であって、面内均一性が良好な薄膜を成膜することが可能な成膜装置を提供する。【解決手段】真空容器11内で基板Wに対して薄膜の成膜を行う成膜装置において、回転テーブル2は基板載置領域21を公転中心周りに公転させ、第1のガス供給部は、基板載置領域21が通過する公転面を前記公転の方向と交差する方向に区画してなる第1の領域R1に吐出部330から薄膜の原料ガスを供給する。第3のガス供給部は、基板載置領域21の公転の方向と交差する方向に伸び、第1の領域R1の外側に設けられた第2の領域R2を挟んで間隔を開けて配置されると共に、各々、反応ガスを第2の領域R2側へ向けて吐出するためのガス吐出孔701が形成され、互いの成す角度が180度未満に設定された2本のガスインジェクター7を備える。プラズマ形成部6は第2の領域R2へ向けて吐出された反応ガスをプラズマ化する。【選択図】図2

3. 发明专利

JP2014140018A Deposition method 有权
标题翻译：沉积方法
公开(公告)号：JP2014140018A
公开(公告)日：2014-07-31
申请号：JP2013237216
申请日：2013-11-15
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： IKEGAWA HIROAKI , UENISHI MASAHIKO , TAKAHASHI HIROSUKE , OI MASATO , OGAWA ATSUSHI
IPC分类号： H01L21/316 , C23C16/34 , C23C16/40 , C23C16/455 , H01L21/31 , H01L21/318
CPC分类号： H01L21/0228 , C23C16/45551 , C23C16/4584 , H01L21/02148 , H01L21/02164 , H01L21/02178 , H01L21/02189 , H01L21/02194 , H01L21/022 , H01L21/68764 , H01L21/68771
摘要： PROBLEM TO BE SOLVED: To provide a deposition method which can uniformly stack an oxide film or a nitride film of a laminated structure on a plurality of substrates.SOLUTION: A deposition method using a deposition apparatus including a rotary table capable of loading a plurality of substrates, a first gas supply part and a second gas supply part comprises: a first step of supplying an oxidation gas from the first and second gas supply parts to rotate the rotary table; a second step of supplying a first reaction gas containing a first element from the first gas supply part and supplying an oxidation gas from the second gas supply part to rotate the rotary table to deposit a first oxide film containing the first element on a substrate; a third step of supplying the oxidation gas from the first and second gas supply parts to rotate the rotary table; and a fourth step of supplying a second reaction gas containing a second element from the first gas supply par and supplying the oxidation gas from the second gas supply part to rotate the rotary table to deposit a second oxide film containing the second element on the substrate.
摘要翻译：要解决的问题：提供一种能够在多个基板上均匀地堆叠层叠结构的氧化物膜或氮化物膜的沉积方法。解决方案：使用包括能够加载多个基板的旋转台的沉积设备的沉积方法基板，第一气体供应部分和第二气体供应部分包括：第一步骤，从第一和第二气体供应部分供应氧化气体以旋转旋转台; 第二步骤，从第一气体供应部分供应含有第一元素的第一反应气体，并从第二气体供应部分供应氧化气体以旋转旋转台，以将含有第一元素的第一氧化膜沉积在基底上; 第三步骤，从第一和第二气体供应部分提供氧化气体以旋转旋转台; 以及第四步骤，从第一气体供应装置供应含有第二元素的第二反应气体，并从第二气体供应部分供应氧化气体，以旋转旋转台，以将含有第二元素的第二氧化物膜沉积在基板上。

4. 发明专利

JP2014125653A Film deposition method 有权
标题翻译：膜沉积法
公开(公告)号：JP2014125653A
公开(公告)日：2014-07-07
申请号：JP2012283175
申请日：2012-12-26
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： OSHITA KENTARO , OI MASATO , SASAKI HIROKO , IKEGAWA HIROAKI
IPC分类号： C23C16/44 , C23C16/34 , C23C16/455 , H01L21/28 , H01L21/285
CPC分类号： H01L21/0228 , C23C16/34 , C23C16/4404 , C23C16/45551 , H01L21/28556 , H01L21/32051 , H01L21/68764 , H01L21/68771 , H01L21/76841
摘要： PROBLEM TO BE SOLVED: To provide a film deposition method which can reduce metallic contamination in a case of deposition even under a high temperature condition.SOLUTION: In a film deposition method using an ALD method, in which a substrate W is passed through a first and a second treatment regions P1, P2 to which different types of gases which react to each other are supplied by rotating a turntable 2 capable of loading the substrate W on a substrate loading part 24, the flim deposition method includes steps of: a coating step where the turntable is rotated without loading the substrate on the substrate loading part, and in a state that the substrate loading part is set to a predetermined temperature, film deposition is performed on the turntable; and a processing step where the substrate is loaded on the substrate loading part, the turntable is rotated, and in a state that the substrate loaded part or the substrate is set to the predetermined temperature or lower, film deposition is performed on the substrate.
摘要翻译：要解决的问题：提供即使在高温条件下也可以减少沉积的情况下的金属污染的成膜方法。解决方案：在使用ALD法的成膜方法中，其中基板W通过第一以及通过使能够将基板W载置在基板载置部24上的转盘2旋转而供给彼此反应的不同种类的气体的第二处理区域P1，P2包括以下步骤：涂布步骤其中转盘旋转而不将基板载载在基板装载部分上，并且在基板装载部分被设定在预定温度的状态下，在转台上进行薄膜沉积; 以及处理步骤，其中将基板装载在基板装载部上，转台旋转，并且在基板装载部或基板被设定在规定温度以下的状态下，在基板上进行成膜。

5. 发明专利

JP2005047766A Ozone production method, ozone production apparatus, method and apparatus for ozone treatment 审中-公开
标题翻译：臭氧生产方法，臭氧生产装置，臭氧处理方法和装置
公开(公告)号：JP2005047766A
公开(公告)日：2005-02-24
申请号：JP2003283134
申请日：2003-07-30
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： UMEHARA TAKAHITO , HASEBE KAZUHIDE , IKEGAWA HIROAKI , UMEKI MAKOTO , TOMITA MASAHIKO
IPC分类号： C01B13/11
摘要： PROBLEM TO BE SOLVED: To suppress the production of metal impurities and to stably produce a large flow amount of ozone in a high concentration.
SOLUTION: A heat treatment apparatus 1 has an ozone production apparatus 21 and a control section 100. The ozone production apparatus 21 has an ozonator 22 for producing ozone, a raw material gas feeding source 25 connected to the ozonator 22 through a raw material gas feeding pipe 23, and an additive gas feeding source 26 connected to the ozonator 22 through an additive gas feeding pipe 24. In the raw material gas feeding pipe 23 and the additive gas feeding pipe 24, MFC 27 and 28 are provided, respectively. The control section 100 controls the MFC 27 so as to feed the raw material gas to the ozonator 22 in a rate of at least 10 L/min and controls the MFC 28 so as to feed the additive gas in such a rate that the concentration of the additive gas becomes 0.1-200 ppm in the raw material gas fed in a feeding rate of 10 L/min.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了抑制金属杂质的产生并且稳定地产生高浓度的大量臭氧流量。解决方案：热处理装置1具有臭氧生成装置21和控制部100.臭氧生成装置21具有用于产生臭氧的臭氧发生器22，原料气体供给源25通过原料连接到臭氧发生器22 原料气体供给管23和通过添加气体供给管24与臭氧发生器22连接的添加气体供给源26.在原料气体供给管23和添加气体供给管24中，分别设有MFC27,28 。控制部100控制MFC27，以至少10L /分钟的速度将原料气体供给至臭氧发生器22，并控制MFC28，以使加料气体的浓度为原料气体以10升/分钟的速度供给，添加气体成为0.1〜200ppm。版权所有（C）2005，JPO＆NCIPI

6. 发明专利

JP2003017434A Method and device for heat treatment 审中-公开
标题翻译：热处理方法和装置
公开(公告)号：JP2003017434A
公开(公告)日：2003-01-17
申请号：JP2001204130
申请日：2001-07-04
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： IKEGAWA HIROAKI , SAKAMOTO KOICHI , SUZUKI KEISUKE
IPC分类号： H01L21/265 , H01L21/324
摘要： PROBLEM TO BE SOLVED: To provide a heat treatment method where temperature distribution, which is optimum for sheet resistance adjustment can be obtained, without using an wafer.
SOLUTION: When annealing treatment for adjusting sheet resistance at a prescribed temperature is performed for a treatment object W, arranged in multistages inside a vertical treatment container 8, a temperature distribution, which is the same as the temperature distribution obtained by referring to oxide film thickness distribution in film formation treatment of a thermal oxide film under the same thermal history as that of the annealing treatment, is provided along an arrangement direction of the treatment object.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：提供一种不使用晶片可以获得对薄片电阻调节最佳的温度分布的热处理方法。解决方案：对于在垂直处理容器8内的多级配置的处理对象W进行用于调整规定温度下的薄层电阻的退火处理，与通过参照氧化膜厚度获得的温度分布相同的温度分布沿着处理对象的排列方向设置与退火处理相同的热历史下的热氧化膜的成膜处理分布。

7. 发明专利

JP2017117941A 成膜装置审中-公开
公开(公告)号：JP2017117941A
公开(公告)日：2017-06-29
申请号：JP2015252064
申请日：2015-12-24
申请人：東京エレクトロン株式会社 , Tokyo Electron Ltd
发明人： IKEGAWA HIROAKI , WADA HIROYUKI , HISHITANI KATSUYUKI
IPC分类号： H01L21/31 , C23C16/455 , C23C16/511 , H05H1/46
CPC分类号： C23C16/50 , C23C16/4412 , C23C16/45536 , C23C16/45544 , C23C16/45551 , C23C16/45574 , C23C16/4584 , H01J37/32192 , H01J37/32238 , H01J37/3244 , H01J37/32449 , H01J37/32513 , H01J37/32733 , H01J37/32779 , H01J37/32899 , H01L21/0217 , H01L21/02274 , H01L21/0228 , H01L21/68764
摘要：【課題】原料ガスと反応するプラズマ化した反応ガスの供給が行われる真空容器内にて、前記反応ガスの供給とは異なる他の処理を行うことが可能な成膜装置を提供する。【解決手段】基板Wが載置される回転テーブル2を収容した真空容器11内で基板Wに対して薄膜の成膜を行う成膜装置において、第1のガス供給部は、真空容器11内の他の空間から区画された第1の領域R1にて原料ガスを供給する。第3のガス供給部は、2本のガスインジェクター7により、第2の領域R2へ向けて反応ガスを吐出し、プラズマ形成部6(6A)は第2の領域R2へ向けて吐出された反応ガスをプラズマ化する。これら第1、第2の領域R1、R2とは異なる位置に設けられた他の処理領域r1、r2では、前記原料ガスの供給、及びプラズマ化した反応ガスの供給による処理とは異なる処理が行われる【選択図】図2

8. 发明专利

JP2014017354A Deposition method 审中-公开
标题翻译：沉积方法
公开(公告)号：JP2014017354A
公开(公告)日：2014-01-30
申请号：JP2012153407
申请日：2012-07-09
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： IKEGAWA HIROAKI , UENISHI MASAHIKO , OGAWA ATSUSHI
IPC分类号： H01L21/316 , C23C16/455 , H01L21/31
CPC分类号： H01L21/76 , C23C16/40 , C23C16/45531 , H01L21/02178 , H01L21/02189 , H01L21/02194 , H01L21/02274 , H01L21/0228 , H01L21/67748 , H01L21/68764 , H01L21/68771
摘要： PROBLEM TO BE SOLVED: To improve composition controllability of a metallic compound.SOLUTION: A deposition method comprises: a first deposition step of depositing a first metal compound film by performing a cycle of exposing a substrate to a first material gas containing a first metal and exposing the substrate to a reaction gas that reacts with the first material gas one and more times; an adsorption step of adsorbing the first metal to the first metallic compound film by exposing the substrate on which the first metallic compound film is deposited, to the first material gas; and a second deposition step of depositing a second metallic compound film on the substrate by performing a cycle of exposing the substrate to which the first metal is adsorbed, to a second material gas containing a second metal and exposing the substrate to a reaction gas that reacts with the second material gas one and more times.
摘要翻译：要解决的问题：提高金属化合物的组成可控性。解决方案：沉积方法包括：第一沉积步骤，通过执行将基底暴露于含有第一金属的第一材料气体的循环来沉积第一金属化合物膜;以及将基板暴露于与第一原料气体反应一次或多次的反应气体; 吸附步骤，通过将沉积有第一金属化合物膜的基板暴露于第一材料气体而将第一金属吸附到第一金属化合物膜上; 以及第二沉积步骤，通过执行使第一金属被吸附的基底曝光的循环，将第二金属化合物膜沉积在第二金属化合物膜上，从而将第二材料气体暴露于反应气体，反应气体与第二材料气一次多次。

9. 发明专利

JP2005159316A Manufacturing method for semiconductor device, film-forming apparatus, and memory medium 审中-公开
标题翻译：半导体器件的制造方法，成膜装置和存储介质
公开(公告)号：JP2005159316A
公开(公告)日：2005-06-16
申请号：JP2004304638
申请日：2004-10-19
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： NAKAJIMA SHIGERU , SAI TOKIN , FUJIWARA TOMONORI , IKEGAWA HIROAKI , NAKAMURA MOTOSHI
IPC分类号： H01L21/316 , H01L29/78
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method for a semiconductor device, in which, for example, a polysilicon electrode is formed on a hafnium compound film which is effective as a highly dielectric film for a gate insulating film of a MOSFET or the like, and flatband voltage shift of the semiconductor device is suppressed. SOLUTION: In a depressurized and heated atmosphere, hafnium organic compound steam is made to react on, for example, disilane gas in a reaction vessel in order to form a hafnium silicate film on a silicon film. Dichlorosilane gas and dinitrogen oxide gas are made to react on the hafnium silicate film, in order to form a silicon oxide film laminated on the hafnium silicate film as a barrier layer. A polysilicon film which becomes a gate electrode is formed on the silicon oxide film. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：解决的问题：提供一种半导体器件的制造方法，其中例如在铪化合物膜上形成多晶硅电极，该铪化合物膜作为用于MOSFET的栅极绝缘膜的高电介质膜是有效的并且半导体器件的平带电压偏移被抑制。解决方案：在减压和加热的气氛中，使铪有机化合物蒸汽在例如反应容器中的乙硅烷气体上反应，以在硅膜上形成硅酸铪膜。使二氯硅烷气体和二氧化氮气体在硅酸铪膜上反应，以形成层叠在硅酸铪膜上作为阻挡层的氧化硅膜。在氧化硅膜上形成成为栅电极的多晶硅膜。版权所有（C）2005，JPO＆NCIPI

10. 发明专利

JP2004311782A Method and device for forming film 审中-公开
公开(公告)号：JP2004311782A
公开(公告)日：2004-11-04
申请号：JP2003104437
申请日：2003-04-08
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： NAKAJIMA SHIGERU , SAI TOKIN , FUJIWARA TOMONORI , IKEGAWA HIROAKI , NAKAMURA MOTOSHI
IPC分类号： C23C16/40 , H01L21/316 , H01L21/8242 , H01L27/108 , H01L29/78
CPC分类号： C23C16/401 , H01L21/31645
摘要： PROBLEM TO BE SOLVED: To provide a method for forming a hafnium compound film having a high crystallization temperature in forming a hafnium compound film effective for a high dielectric constant film such as, for instances, a gate oxide film of a MOSFET.
SOLUTION: A hafnium silicate film is formed on a substrate by reacting a vapor of a hafnium organic compound with a monosilane gas or disilane gas under reduced-pressure and heating atmosphere in an reactive vessel. The obtained high dielectric constant film has a high crystallization temperature owing to a suppression of crystallization by silicon. The hafnium oxide film and the hafnium silicate film are annealed by ammonia gas under the heating atmosphere.
COPYRIGHT: (C)2005,JPO&NCIPI

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