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1. 发明专利

JPH04187771A CLEANING METHOD 失效
公开(公告)号：JPH04187771A
公开(公告)日：1992-07-06
申请号：JP31704890
申请日：1990-11-21
申请人： TOKYO ELECTRON LTD , TOSHIBA CORP
发明人： SHIRATANI ISAO , MIYAZAKI SHINJI , MIKATA YUICHI , MORIYA TAKAHIKO , OKUMURA KATSUYA
IPC分类号： C23C16/44 , C23F4/00 , H01L21/205 , H01L21/31
摘要： PURPOSE:To easily and safely remove arsenic compds. by passing a gas contg. NF3 through a treating chamber heated to a specified temp. and dry-cleaning the chamber by the thermal decomposition of the gas. CONSTITUTION:A treating chamber 1 is heated to 650 deg.C or higher by a heating means 2. A cleaning gas contg. NF3 gas and a carrier gas (e.g. nitrogen) is prepared. The cleaning gas is introduced into the chamber 1 which is to be cleaned. The arsenic oxides depositing in the chamber 1 are easily and safely removed in this way.

2. 发明专利

JP2008243837A Film forming apparatus, method of forming film, and storage medium 有权
标题翻译：电影成型装置，成膜方法和储存介质
公开(公告)号：JP2008243837A
公开(公告)日：2008-10-09
申请号：JP2007077607
申请日：2007-03-23
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： TOJO YUKIO , SHIRATANI ISAO , KUROKAWA MASATAKE
IPC分类号： H01L21/31 , C23C16/44
摘要： PROBLEM TO BE SOLVED: To control excessive etching process within a reactor during dry cleaning while controlling the accumulated film thickness in the down-stream side of a processing region for the purpose of forming a film within the reactor of a double structure including a vertical internal pipe and an external pipe.
SOLUTION: Gas for controlling film formation is supplied to control film formation onto the external surface of an internal pipe and the internal surface of an external pipe from a gas supplying pipe having an open gas supplying port in the down-stream side of a processing region of a substrate surrounded by the internal pipe. Amount of gas supply of the gas supplying pipe is set so that a time difference (t2-t1) in the cleaning after film formation through gas supply for controlling film formation becomes equal to a half or less of the time difference (t2-t1) in the cleaning after film formation without gas supply for controlling film formation, when the time required for cleaning of thin film adhered to the internal surface of the internal pipe in the processing region is defined as t1; and the time required for cleaning of thin film adhered to the external surface of the internal pipe and the internal surface of the external pipe is defined as t2.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了在干燥清洁期间控制反应器内的过度蚀刻工艺，同时控制加工区域的下游侧的累积膜厚度，以便在反应器内形成双重结构的膜，包括垂直内管和外管。
解决方案：提供用于控制成膜的气体，以控制在内管的外表面和外管的内表面上的成膜，该外管从具有开口气体供应口的供气管在下游侧由内管包围的基板的处理区域。气体供给管的气体供给量被设定为使得通过用于控制成膜的气体供给形成成膜后的清洗中的时间差（t2-t1）等于时间差的一半以下（t2-t1）在没有气体供给用于控制成膜的成膜后的清洗中，当在处理区域内附着在内管内表面上的薄膜的清洗所需的时间定义为t1时; 并且清洁附着在内管的外表面和外管的内表面上的薄膜所需的时间被定义为t2。版权所有（C）2009，JPO＆INPIT

3. 发明专利

JPH0226018A PLASMA TREATMENT APPARATUS 失效
公开(公告)号：JPH0226018A
公开(公告)日：1990-01-29
申请号：JP17625988
申请日：1988-07-15
申请人： TOKYO ELECTRON LTD
发明人： NISHIMURA TOSHIHARU , SHIRATANI ISAO
IPC分类号： H01L21/302 , H01L21/205 , H01L21/3065 , H01L21/31
摘要： PURPOSE:To improve the reliability of electrical contacts by a method wherein contacts for electrical connection between electrode plates and an electrode rod are maintained not only along the thickness direction of the hole parts of the electrode plates but also between the electrode rod and the side walls of the electrode pates. CONSTITUTION:Contacts which facilitate electrical connection between an electrode rod 10 and electrode plates 4a and 4b are provided not only along the thickness direction of the hole parts of the electrode plates 4a and 4b but also between the electrode rod 10 and the side walls of the electrode plates 4a and 4b. That is, conducting members are formed on the inner surfaces of separators 14 into which the electrode rod 10 is inserted to connect the conducting members of the separators 14 to the electrode rod 10 along the required length and, further, conducting members are also provided at the end surfaces of the separators 14 to be brought into contact with the electrode plates 4a and 4b at both the ends of the separators 14 and electrical connection to the electrode plates 4a and 4b is maintained in a region corresponding to the sectional area of the separator 14. Thus, a, conducting path of the electrode 10conducting member-electrode plate can be formed. With this constitution, contact defects can be avoided and the reliability of the contacts can be improved.

4. 发明专利

JPH0513353A VERTICAL HEAT TREATMENT DEVICE 失效
公开(公告)号：JPH0513353A
公开(公告)日：1993-01-22
申请号：JP16666491
申请日：1991-07-08
申请人： TOKYO ELECTRON LTD
发明人： NIINO REIJI , SHIRATANI ISAO , MIYAGAWA MASAAKI
IPC分类号： H01L21/22
摘要： PURPOSE:To reduce the adhering quantity of reaction by-product on an undesired position from the conventional quantity, reduce maintenance frequency and improve productivity. CONSTITUTION:A manifold cover 20 is provided between an inner tube 11 and a manifold 17. The manifold cover 20 is formed of quartz in cylinder-shape and is provided along the inner wall of the manifold 17 to be extended from a point between the inner tube 11 and the manifold 17 to the point between the inner tube 11 and an outer tube 12. The top edge is designed to be extended to a position where a heater 13 is provided on the external side of the outer tube 12.

5. 发明专利

JPH02175875A METHOD FOR CLEANING REACTION TUBE 失效
公开(公告)号：JPH02175875A
公开(公告)日：1990-07-09
申请号：JP32960388
申请日：1988-12-27
申请人： TOKYO ELECTRON LTD
发明人： HAYASHI YOSHINOBU , JINNAI SHINPEI , USHIKAWA HARUNORI , SHIRATANI ISAO
IPC分类号： C23C16/44 , C23C16/50 , C23F4/00 , H01L21/205 , H01L21/302 , H01L21/3065
摘要： PURPOSE:To efficiently and easily clean the inside of a reaction tube by housing a boat provided with plural electrodes arrays to generate plasma in the reaction tube, admitting an etching gas into the tube, impressing an AC voltage between the counter electrodes and moving the boat near to the part to be cleaned. CONSTITUTION:The boat 4 disposed with the plural arrays of the electrode plates 11 is inserted by means of cantilevers 7A, 7B into the vacant part 1a in the reaction tube 1 and is airtightly mounted to the prescribed position. After prescribed vacuum state is maintained in the reaction tube 11, the the etching gas is introduced into the reaction tube 1 and an RF power source 14 for plasma generation is switched on. The plasma is, therefore, generated between the different poles of the electrode plates 11 via the cantilevers 7A, 7B and fixing bars 9A, 9B. A vertical moving mechanism 18 is so driven as to bring the boat 4 having such plasma region near to the inside wall surface of the reaction tube 1, by which the reaction products sticking to the inside wall surface and the boat 4 are removed.

6. 发明专利

JPH02174222A TREATMENT DEVICE 失效
公开(公告)号：JPH02174222A
公开(公告)日：1990-07-05
申请号：JP32960488
申请日：1988-12-27
申请人： TOKYO ELECTRON LTD
发明人： JINNAI SHINPEI , HAYASHI YOSHINOBU , USHIKAWA HARUNORI , SHIRATANI ISAO
IPC分类号： H01L21/205 , H01L21/31
摘要： PURPOSE:To prevent a treated gas in a reaction tube from flowing into an outside environment atmosphere and perform safety treatment operations by mounting handling parts in an airtight container even though they are exposed to the outside of a reaction furnace located on a support. CONSTITUTION:Handling parts 7 are mounted by exposing them to the outside of a reaction tube 2. The handling parts 7 which are exposed to the outside are surrounded so as to be kept airtight through bellows 20 which are superior in corrosion resistance and thermal resistance, a cylindrical airtight cup 21 having a base, and an O-ring 22. Even though slits 10 develop at a sheath tube 9 of a support 1, an extreme end part 8a of the handling parts 7 is isolated from an outside environment atmosphere in a state in which the end part 8a is kept airtight by the airtight cup 21. As a result, such a configuration prevents a treated gas 11 from flowing into the side of the outside environment atmosphere from gaps between the sheath tube 9 and support bar 8. Then, even though the support 1 breaks down, the treatment of a wafer 14 is performed without discharging the treated gas 11 from damaged parts to the outside. When a prescribed time of treatment elapses, this device automatically stops treatment operation. Then unloading is performed and a boat 15 is taken out at a prescribed position.

7. 发明专利

JP2014154751A Gas supply system and film deposition apparatus 有权
标题翻译：气体供应系统和薄膜沉积装置
公开(公告)号：JP2014154751A
公开(公告)日：2014-08-25
申请号：JP2013024454
申请日：2013-02-12
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： SATO KENICHI , SHIRATANI ISAO
IPC分类号： H01L21/31 , C23C16/455
摘要： PROBLEM TO BE SOLVED: To provide a gas supply system in which backflow of gas can be prevented when a flow of gas is switched between a gas supply line and a vent line.SOLUTION: There is provided a gas supply system 10 supplying gas required for film deposition processing to a processing vessel 4 performing the film deposition processing. The gas supply system 10 includes: a gas supply line 54 in which a first on-off valve V1 is interposed, and which supplies gas to the processing vessel; a vent line 56 in which a second on-off valve V2 is interposed, and which is branched from the gas supply line; and a valve control section 66 which, when switching a flow of gas from a processing vessel side to a vent line side, controls the second on-off valve to be opened after the lapse of a first predetermined time T1 during which pressure in the gas supply line becomes higher than pressure at the vent line side by bringing the first and second on-off valves into a simultaneously closed state and which, when switching the flow of gas from the vent line side to the processing vessel side, controls the first on-off valve to be opened after binging the first and the second on-off valves into the simultaneously closed state.
摘要翻译：要解决的问题：提供一种气体供应系统，其中当在气体供应管线和通气管线之间切换气体流时，可以防止气体回流。解决方案：提供一种气体供应系统10，其供应气体所需的气体对沉积处理的处理容器4进行成膜处理。气体供给系统10包括：气体供给管线54，其中插入有第一开关阀V1，并向处理容器供给气体; 排气管56，其中插入有第二开关阀V2，并且从气体供给管线分支; 以及阀控制部66，其在从处理容器侧向排气管线侧切换气体流时，在经过第一规定时间T1之后，控制第二开闭阀打开，在该期间，气体中的压力供给线通过使第一和第二开关阀处于同时闭合状态而变得高于排气管线侧的压力，并且当从排气管线侧向处理容器侧切换气体时，控制第一开启在将第一和第二开关阀结合到同时关闭状态之后要打开的阀。

8. 发明专利

JP2001298017A THIN FILM FORMING METHOD AND DEVICE 失效
公开(公告)号：JP2001298017A
公开(公告)日：2001-10-26
申请号：JP2000116185
申请日：2000-04-18
申请人： TOKYO ELECTRON LTD
发明人： MATSUNAGA MASANOBU , NISHIMURA TOSHIHARU , SHIRATANI ISAO , SANO KEIKO , FUJITA TAKEHIKO
IPC分类号： C23C16/44 , H01L21/31 , H01L21/316 , H01L21/318
摘要： PROBLEM TO BE SOLVED: To provide a thin film forming device and a thin film forming method capable of extending maintenance cycle of the thin film forming device by making reaction products hardly adhere to an exhaust pipe. SOLUTION: A heat treatment device 1 is equipped with a reaction chamber 2 in which a silicon oxide film is formed on the surface of a semiconductor wafer 10 by supplying TEOS in an atmosphere of reduced pressure and an exhaust pipe 15 connected to the reaction chamber. In a process of forming a silicon oxide film on the semiconductor wafer 10 by the use of the heat treatment device 1, when oxygen gas is introduced through an additive gas inlet pipe 21, gas flowing through the exhaust pipe 15 is increased in flow rate. Therefore, reaction products discharged out into the exhaust pipe 15 flow easily away through the exhaust pipe 15, so that they are hardly attached to the exhaust pipe 15. Therefore, the heat treatment device 1 is elongated in a maintenance cycle.

9. 发明专利

JPH02214113A PLASMA CVD APPARATUS 失效
公开(公告)号：JPH02214113A
公开(公告)日：1990-08-27
申请号：JP3551889
申请日：1989-02-15
申请人： TOKYO ELECTRON LTD , TEL SAGAMI LTD
发明人： SHIRATANI ISAO , HAMADA YUUKI
IPC分类号： C23C16/50 , H01L21/205 , H01L21/31
摘要： PURPOSE:To obtain a formed film of a uniform film thickness without causing defective electrical connection by a method wherein a fork, a quartz boat and a connection part are coupled by means of a conical shape. CONSTITUTION:An electrode sheet 10 which has been formed inside a quartz boat 20 is supported by a fork 30 as a support body of the quartz boat 20 inside a reaction tube 8 which is provided with a reactant-gas inflow port 6 and an evacuation port 7. The tip of a connector part 21 of the quartz boat 20 is formed to be a conical protrusion 15; the other end is fit into a spring 16 so as to be freely slid; when the protrusion 15 is pressurized upward, a load is exerted downward. On the other hand, a connection part 31 of the fork 30 is provided with a conical subsidence 17 in a shape which collides with and stops the protrusion 15 at the tip of the connector part 21 of the quartz boat. Thereby, it is possible to eliminate a nonuniformity of a film thickness of a formed thin film arising from defective contact of the contact part of the fork 30 with the quartz boat 20 due to deformation of the fork 30, and a thin film of a uniform thickness can be formed.

10. 发明专利

JP2013016536A Film formation device 有权
标题翻译：胶片形成装置
公开(公告)号：JP2013016536A
公开(公告)日：2013-01-24
申请号：JP2011146244
申请日：2011-06-30
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： SATO IZUMI , SHIRATANI ISAO , ASARI SATOSHI , MURAKAMI TSUTOMU
IPC分类号： H01L21/205 , C23C16/52
CPC分类号： C23C16/44 , B05C11/00 , C23C16/00
摘要： PROBLEM TO BE SOLVED: To prevent a protection tube into which a temperature measuring part is inserted and extending along an inner surface of a reaction tube from sticking to the inner surface of the reaction tube.SOLUTION: A film formation device includes: a substrate holder holding multiple substrates so that the multiple substrates overlap with each other while being spaced away from each other in a vertical direction; a reaction tube housing the substrate holder; a material gas supply tube supplying a material gas of a thin film formed on the multiple substrate to the multiple substrate held by the substrate holder housed in the reaction tube; a support part supporting the reaction tube; a heating part disposed at the outer side of the reaction tube and heating the multiple substrates; a protection tube fixed to the support part at one end part, extending in the arrangement direction of the multiple substrates at an area between the substrate holder and the reaction tube, and allowing a temperature measuring part to be inserted therein; and a protruding part provided in at least one of an outer surface of the protection tube and an inner surface of the reaction tube and forming a gap between the outer surface of the protection tube and the inner surface of the reaction tube. The above problem is solved by the film formation device.
摘要翻译：要解决的问题：为了防止温度测量部件插入并沿着反应管的内表面延伸的保护管粘附到反应管的内表面。＆lt;解决方案＆gt;解决方案：一种成膜装置，包括：保持多个基板的基板保持件，使得多个基板在垂直方向上彼此间隔开地彼此重叠; 容纳衬底保持器的反应管; 将形成在所述多基板上的薄膜的原料气体供给到容纳在所述反应管内的所述基板保持架的所述多基板上的原料气体供给管; 支撑反应管的支撑部; 加热部，其设置在所述反应管的外侧并加热所述多个基板; 固定在一端部的支撑部的保护管，在基板保持架和反应管之间的区域沿多个基板的排列方向延伸，并且允许温度测量部插入其中; 以及突出部，设置在所述保护管的外表面和所述反应管的内表面中的至少一个中，并且在所述保护管的外表面和所述反应管的内表面之间形成间隙。上述问题由成膜装置解决。版权所有（C）2013，JPO＆INPIT

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