专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JP2013125729A Plasma processing apparatus 有权
标题翻译：等离子体加工设备
公开(公告)号：JP2013125729A
公开(公告)日：2013-06-24
申请号：JP2011275524
申请日：2011-12-16
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社 , Daihen Corp , 株式会社ダイヘン
发明人： UMEHARA NAOYUKI , OTANI RYUJI , ITO SHUNICHI , SEI KAZUTAKA , NISHIDA TOMOMASA
IPC分类号： H05H1/46 , H01L21/205 , H01L21/3065 , H05H1/00
CPC分类号： H01J37/32577 , H01J37/32091 , H01J37/32155 , H01J37/32165 , H01J37/3244 , H01J37/32458 , H01J37/32568 , H01J37/32935 , H01J2237/24564 , H01J2237/327 , H01J2237/334 , H05H1/46 , H05H2001/4682
摘要： PROBLEM TO BE SOLVED: To perform reflection wave power monitoring in a 3-frequency impression method with high accuracy, and to control each RF power feeding system against excessive reflection wave power precisely.SOLUTION: In a plasma processing apparatus, first, second, and third RF power monitors 94, 96, and 98 simultaneously monitor powers of high-frequency waves (progressive waves) respectively propagating from first, second, and third high-frequency power supplies 36, 38, and 40 toward a load side on first, second, and third high-frequency power feeding lines 88, 90, and 92, and powers of high-frequency waves (reflection waves) respectively propagating from the load side toward the first, second, and third high-frequency power supplies 36, 38, and 40. A main controller 82 controls the high-frequency power supplies 36, 38, and 40 of three systems and matching circuits 32, 44, and 46 in a unified manner on the basis of monitor information transmitted from the RF power monitors 94, 96, and 98.
摘要翻译：要解决的问题：以高精度的3频印模法进行反射波功率监测，并且精确地控制每个RF馈电系统以防止过多的反射波功率。解决方案：在等离子体处理装置中，第一，第二和第三RF功率监视器94,96,98同时监视从第一，第二和第三高频分别传播的高频波（逐行波）的功率电源36,38和40朝向第一，第二和第三高频馈电线88,90和92的负载侧，以及分别从负载侧朝着向负载侧传播的高频波（反射波）的功率第一，第二和第三高频电源36,38和40.主控制器82控制三个系统的高频电源36,38和40以及匹配电路32,44和46的高频电源基于从RF功率监视器94,96,98发送的监视信息的统一方式。（C）2013，JPO＆INPIT

2. 发明专利

JP2006270017A Plasma etching system and method, and computer-readable storage medium 有权
标题翻译：等离子体蚀刻系统和方法以及计算机可读存储介质
公开(公告)号：JP2006270017A
公开(公告)日：2006-10-05
申请号：JP2005181131
申请日：2005-06-21
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： KOSHIISHI AKIRA , SUGIMOTO MASARU , HIUGA KUNIHIKO , KOBAYASHI NORIYUKI , KOSHIMIZU CHISHIO , OTANI RYUJI , KIBI KAZUO , SAITO MASASHI , MATSUMOTO NAOKI , IWATA MANABU , YANO DAISUKE , YAMAZAWA YOHEI
IPC分类号： H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a plasma etching system in which etching can be carried out with high selection ratio, while sustaining high plasma resistance of the organic mask layer, such as resist layer, eliminating sticking of deposits to electrode effectively, and the plasma density can be controlled. SOLUTION: An upper electrode 34 and a lower electrode 16 for supporting a wafer are arranged facing each other in a chamber 10, the upper electrode 34 is connected with a first high-frequency power supply 48 for applying a first high-frequency power of relatively high frequency, the lower electrode 16 is connected to a second high-frequency power supply 90 for applying a second high-frequency power of relatively low frequency, the upper electrode 34 is connected with a variable DC power supply 50 and plasma etching is carried out, by supplying processing gas into the chamber 10 and generating plasma. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了提供等离子体蚀刻系统，其中可以以高选择比进行蚀刻，同时保持诸如抗蚀剂层的有机掩模层的高等离子体电阻，从而有效地消除了沉积物对电极的粘附，并且可以控制等离子体密度。解决方案：用于支撑晶片的上电极34和下电极16在室10中彼此面对布置，上电极34与第一高频电源48连接，用于施加第一高频相对高频的功率，下电极16连接到用于施加相对低频的第二高频功率的第二高频电源90，上电极34与可变直流电源50连接，等离子体蚀刻通过将处理气体供应到室10中并产生等离子体来进行。版权所有（C）2007，JPO＆INPIT

3. 发明专利

JP2011210958A Plasma processing apparatus and method of manufacturing semiconductor device 有权
标题翻译：等离子体处理装置及制造半导体器件的方法
公开(公告)号：JP2011210958A
公开(公告)日：2011-10-20
申请号：JP2010077282
申请日：2010-03-30
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： YAMAMOTO TAKASHI , MIZUKAMI SHUNSUKE , OTANI RYUJI , HIGUCHI KIMIHIRO
IPC分类号： H01L21/3065 , H01L21/31 , H05H1/46
CPC分类号： H01L21/6831 , C23C16/507 , C23C16/509 , C23C16/5093 , H01J37/32091 , H01J37/32165 , H01J37/32642 , H01L21/67103 , H01L21/67109 , Y10T29/41
摘要： PROBLEM TO BE SOLVED: To provide a plasma processing apparatus that prevents an electric discharge from being generated between a substrate such as a semiconductor wafer and a base of a lower electrode or its neighboring structure, and improves a yield to improve productivity, and a method of manufacturing a semiconductor device.SOLUTION: The plasma processing apparatus includes: a processing chamber; a lower electrode provided in the processing chamber and having a base made of a conductive metal to which a high frequency power is applied, the lower electrode also serving as a mounting table for mounting thereon a target substrate; an upper electrode provided in the processing chamber and arranged to face the lower electrode; and a focus ring disposed above the lower electrode to surround the target substrate. An electrical connection mechanism is provided between the base of the lower electrode and the focus ring to electrically connect the base of the lower electrode to the focus ring through a current control element, and generates a DC current in accordance with a potential difference.
摘要翻译：要解决的问题：提供一种等离子体处理装置，其防止在诸如半导体晶片的基板和下电极的基底或其相邻结构之间产生放电，并且提高产率以提高生产率，以及方法制造半导体器件。解决方案：等离子体处理设备包括：处理室; 设置在处理室中的下电极，具有由导电金属制成的基座，高频电源施加到该底座，下电极也用作用于安装目标衬底的安装台; 设置在所述处理室中并且布置成面向所述下电极的上电极; 以及设置在所述下电极上方以围绕所述目标基板的聚焦环。电连接机构设置在下电极的基座和聚焦环之间，通过电流控制元件将下电极的基座与聚焦环电连接，并根据电位差产生直流电流。

4. 发明专利

JP2011097063A Plasma treatment system and method of the same, and computer-readable storage medium 有权
标题翻译：等离子体处理系统及其方法，以及计算机可读存储介质
公开(公告)号：JP2011097063A
公开(公告)日：2011-05-12
申请号：JP2010249961
申请日：2010-11-08
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： KOSHIISHI AKIRA , SUGIMOTO MASARU , HIUGA KUNIHIKO , KOBAYASHI NORIYUKI , KOSHIMIZU CHISHIO , OTANI RYUJI , KIBI KAZUO , SAITO MASASHI , MATSUMOTO NAOKI , IWATA MANABU , YANO DAISUKE , YAMAZAWA YOHEI , HANAOKA HIDETOSHI , HAYAMI TOSHIYASU , YAMAZAKI HIROKI , SATO MANABU
IPC分类号： H01L21/3065 , H01J37/32 , H01L21/311 , H05H1/46
CPC分类号： H01L21/31116 , H01J37/32091 , H01J37/32165 , H01J37/32532 , H01J2237/3342 , H01L21/31138
摘要： PROBLEM TO BE SOLVED: To provide a plasma etching system capable of etching with a high selection ratio while maintaining the high plasma resistance of an organic mask layer such as a resist layer or the like, and effectively eliminating the adhesion of a deposit to an electrode and, furthermore, controlling plasma density. SOLUTION: The plasma etching system is provided with an upper electrode 34 and a lower electrode 16 for supporting a wafer oppositely arranged in a chamber 10. To the lower electrode 16, there are connected a first high frequency power source 89 applying the first high frequency power of a relatively high frequency, and a second high frequency power source 90 applying the second high frequency power of a relatively low frequency, to the upper electrode 34, a variable DC power source 50 is connected; a treatment gas is supplied into the chamber 10 and brought into a plasma state, and, thereby, plasma etching is carried out. A conductive member 91 always grounded is provided in order to discharge the current based on the DC voltage from the DC power source 50 applied to the upper electrode 34 through plasma. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够在保持诸如抗蚀剂层等的有机掩模层的高等离子体电阻的同时以高选择率进行蚀刻的等离子体蚀刻系统，并且有效地消除了沉积物的附着并且另外控制等离子体密度。解决方案：等离子体蚀刻系统设置有用于支撑相对设置在室10中的晶片的上电极34和下电极16.向下电极16连接施加第一高频电源89 相对高频的第一高频功率和施加相对较低频率的第二高频功率的第二高频电源90连接到上电极34，连接可变直流电源50; 将处理气体供给到室10中并进入等离子体状态，从而进行等离子体蚀刻。提供总是接地的导电构件91，以便基于通过等离子体施加到上电极34的直流电源50的直流电压来放电电流。版权所有（C）2011，JPO＆INPIT

5. 发明专利

JP2011049592A Plasma processing system and method, and computer-readable storage medium 有权
标题翻译：等离子体处理系统和方法以及计算机可读存储介质
公开(公告)号：JP2011049592A
公开(公告)日：2011-03-10
申请号：JP2010249962
申请日：2010-11-08
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： KOSHIISHI AKIRA , SUGIMOTO MASARU , HIUGA KUNIHIKO , KOBAYASHI NORIYUKI , KOSHIMIZU CHISHIO , OTANI RYUJI , KIBI KAZUO , SAITO MASASHI , MATSUMOTO NAOKI , OYA YOSHINOBU , IWATA MANABU , YANO DAISUKE , YAMAZAWA YOHEI , HANAOKA HIDETOSHI , HAYAMI TOSHIYASU , YAMAZAKI HIROKI , SATO MANABU
IPC分类号： H01L21/3065 , H01J37/32 , H01L21/205 , H01L21/311 , H05H1/46
CPC分类号： H01L21/31116 , H01J37/32091 , H01J37/32165 , H01J37/32532 , H01J2237/3342 , H01L21/31138
摘要： PROBLEM TO BE SOLVED: To provide a plasma processing system where sticking of deposits to the inner wall of a chamber or an in-chamber member, such as an insulator, can be prevented. SOLUTION: An upper electrode 34 and a lower electrode 16 for supporting a wafer are arranged facing each other in a chamber 10, the upper electrode 34 is connected with a first high-frequency power supply 48 for applying a first high-frequency power of relatively high frequency, the lower electrode 16 is connected to a second high-frequency power supply 90 for applying a second high-frequency power of relatively low frequency, the upper electrode 34 is connected with a variable DC power supply 50 and plasma etching is carried out, by supplying processing gas into the chamber 10 and generating plasma. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种等离子体处理系统，其中可以防止将沉积物粘附到室或室内构件（例如绝缘体）的内壁。解决方案：用于支撑晶片的上电极34和下电极16在腔室10中彼此相对布置，上电极34与第一高频电源48连接，用于施加第一高频相对高频的功率，下电极16连接到用于施加相对低频的第二高频功率的第二高频电源90，上电极34与可变直流电源50连接，等离子体蚀刻通过将处理气体供应到室10中并产生等离子体来进行。版权所有（C）2011，JPO＆INPIT

6. 发明专利

JP2011049591A Plasma etching system and method, and computer-readable storage medium 有权
标题翻译：等离子体蚀刻系统和方法以及计算机可读存储介质
公开(公告)号：JP2011049591A
公开(公告)日：2011-03-10
申请号：JP2010249960
申请日：2010-11-08
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： KOSHIISHI AKIRA , SUGIMOTO MASARU , HIUGA KUNIHIKO , KOBAYASHI NORIYUKI , KOSHIMIZU CHISHIO , OTANI RYUJI , KIBI KAZUO , SAITO MASASHI , MATSUMOTO NAOKI , IWATA MANABU , YANO DAISUKE , YAMAZAWA YOHEI
IPC分类号： H01L21/3065 , H01J37/32 , H01L21/311 , H05H1/46
CPC分类号： H01L21/31116 , H01J37/32091 , H01J37/32165 , H01J37/32532 , H01J2237/3342 , H01L21/31138
摘要： PROBLEM TO BE SOLVED: To provide a plasma etching system in which etching can be carried out with high selection ratio, while sustaining high plasma resistance of the organic mask layer, such as resist layer, sticking of deposits to electrode is effectively eliminated, and the plasma density can be controlled. SOLUTION: An upper electrode 34 and a lower electrode 16 for supporting a wafer are arranged facing each other in a chamber 10, the upper electrode 34 is connected to a first high-frequency power supply 48 for applying a first high-frequency power of relatively high frequency, the lower electrode 16 is connected to a second high-frequency power supply 90 for applying a second high-frequency power of relatively low frequency, the upper electrode 34 is connected to a variable DC power supply 50 and plasma etching is carried out, by supplying processing gas into the chamber 10 and generating plasma. An electrically conductive member 91 which is always grounded is provided to allow current based on DC voltage from the DC power supply 50 applied to the upper electrode 34 to escape via plasma. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了提供可以以高选择比进行蚀刻的等离子体蚀刻系统，同时维持诸如抗蚀剂层的有机掩模层的高等离子体电阻，有效地消除了沉积物对电极的粘附，并且可以控制等离子体密度。解决方案：用于支撑晶片的上电极34和下电极16在室10中彼此面对布置，上电极34连接到第一高频电源48，用于施加第一高频相对高频的功率，下电极16连接到用于施加相对低频的第二高频电源的第二高频电源90，上电极34连接到可变直流电源50和等离子体蚀刻通过将处理气体供应到室10中并产生等离子体来进行。设置总是接地的导电构件91，以允许基于施加到上电极34的直流电源50的直流电压通过等离子体逸出的电流。版权所有（C）2011，JPO＆INPIT

7. 发明专利

JP2013191857A Plasma processing device and plasma processing method, and computer readable storage medium 有权
标题翻译：等离子体处理装置和等离子体处理方法以及计算机可读存储介质
公开(公告)号：JP2013191857A
公开(公告)日：2013-09-26
申请号：JP2013089519
申请日：2013-04-22
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： KOSHIISHI AKIRA , SUGIMOTO MASARU , HIUGA KUNIHIKO , KOBAYASHI NORIYUKI , KOSHIMIZU CHISHIO , OTANI RYUJI , KIBI KAZUO , SAITO MASASHI , MATSUMOTO NAOKI , OYA YOSHINOBU , IWATA MANABU , YANO DAISUKE , YAMAZAWA YOHEI , HANAOKA HIDETOSHI , HAYAMIZU TOSHIYASU , YAMAZAKI HIROKI , SATO MANABU
IPC分类号： H01L21/3065 , C23C16/509 , C23C16/517 , H01J37/32 , H01L21/311 , H05H1/46
CPC分类号： H01L21/31116 , H01J37/32091 , H01J37/32165 , H01J37/32532 , H01J2237/3342 , H01L21/31138
摘要： PROBLEM TO BE SOLVED: To provide a plasma processing device capable of effectively preventing deposit from adhering to a chamber inner member such as a chamber inner wall and an insulator.SOLUTION: A plasma processing device for performing plasma etching by supplying a processing gas to be plasma into a chamber 10 comprises: an upper electrode 34 and a lower electrode 16 for supporting a wafer which are arranged so as to face each other in the chamber 10; a third high-frequency power supply 224 (first high-frequency power application unit) which is connected to the upper electrode 34 for applying high-frequency power for plasma formation; a first high-frequency power supply 89 and second high-frequency power supply 90 (second high-frequency power application unit and third high-frequency power application unit) which are connected to the lower electrode 16 for outputting high-frequency power for ion attraction; and a variable DC power supply 50 connected to the upper electrode 34.
摘要翻译：要解决的问题：提供一种等离子体处理装置，其能够有效地防止沉积物附着到诸如室内壁和绝缘体的室内部构件。解决方案：一种等离子体处理装置，用于通过将处理气体供给来进行等离子体蚀刻等离子体进入腔室10包括：用于支撑晶片的上电极34和下电极16，其布置成在腔室10中彼此面对; 连接到用于施加用于等离子体形成的高频电力的上电极34的第三高频电源224（第一高频电源施加单元）连接到下电极16的第一高频电源89和第二高频电源90（第二高频电力施加单元和第三高频电力施加单元），用于输出用于离子吸引的高频电力 ; 以及连接到上电极34的可变直流电源50。

8. 发明专利

JP2006270019A Plasma processing system and method, and computer-readable storage medium 有权
标题翻译：等离子体处理系统和方法以及计算机可读存储介质
公开(公告)号：JP2006270019A
公开(公告)日：2006-10-05
申请号：JP2005181133
申请日：2005-06-21
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： KOSHIISHI AKIRA , SUGIMOTO MASARU , HIUGA KUNIHIKO , KOBAYASHI NORIYUKI , KOSHIMIZU CHISHIO , OTANI RYUJI , KIBI KAZUO , SAITO MASASHI , MATSUMOTO NAOKI , OYA YOSHINOBU , IWATA MANABU , YANO DAISUKE , YAMAZAWA YOHEI , HANAOKA HIDETOSHI , HAYAMIZU TOSHIYASU , YAMAZAKI HIROKI , SATO MANABU
IPC分类号： H01L21/3065 , H05H1/00 , H05H1/46
摘要： PROBLEM TO BE SOLVED: To provide a plasma processing system where sticking of deposits to the inner wall of a chamber or a in-chamber member, such as an insulator, can be prevented. SOLUTION: The plasma processing system performing plasma processing on a wafer W by generating plasma between an upper electrode 34 and a lower electrode 16 comprises a DC power supply 50 for applying a DC voltage to the upper electrode 34, such that the absolute value of the self-bias voltage V dc on the surface becomes large enough to attain predetermined sputtering effect for the surface, or reduced plasma is formed on the counter electrode side of an application electrode, by increasing the thickness of a plasma sheath in the application electrode, or a substrate to be processed is irradiated with electrons generated in the vicinity of the application electrode, or the plasma potential is controlled to a desired value, or the plasma density is increased, or the distribution of plasma density becomes uniform to the extent of obtaining the desired etching uniformity. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种等离子体处理系统，其中可以防止将沉积物粘附到室或室内构件（例如绝缘体）的内壁。解决方案：通过在上电极34和下电极16之间产生等离子体，在晶片W上进行等离子体处理的等离子体处理系统包括用于向上电极34施加直流电压的直流电源50，使得绝对表面上的自偏压电压V DC 的值变得足够大以达到表面的预定溅射效应，或者通过增加厚度来增加等离子体在施加电极的对电极侧上形成或者在施加电极附近产生的电子照射待加工的基板，或者将等离子体电位控制在期望值，或等离子体密度增加，或者等离子体密度的分布等离子体密度在获得所需蚀刻均匀性的程度上变得均匀。版权所有（C）2007，JPO＆INPIT

9. 发明专利

JP2005236138A Plasma treating apparatus and its control method 有权
标题翻译：等离子体处理装置及其控制方法
公开(公告)号：JP2005236138A
公开(公告)日：2005-09-02
申请号：JP2004045172
申请日：2004-02-20
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： SAKAE NAOTO , TSUCHIYA HIROSHI , HIGASHIURA TSUTOMU , KATO HIDEO , OTANI RYUJI
IPC分类号： H05H1/46 , C23C16/505 , C23F1/00 , H01J37/32 , H01L21/3065
CPC分类号： H01J37/32082 , H01J37/32935
摘要： PROBLEM TO BE SOLVED: To smoothly generate plasma, to further reduce any damage to an object to be treated, and to further reduce any load on a high frequency power source or matching unit or the like. SOLUTION: This plasma treating apparatus is provided with a lower electrode 4 arranged in a treatment chamber, and placed with an object to be treated, an upper electrode 21 arranged so as to be faced to the lower electrode in the treatment chamber, a first high frequency transmitter 29 for impressing a high frequency power to the upper electrode, a second high frequency oscillator 18 for impressing the high frequency power to the lower electrode, and a control unit 20 for gradually increasing an output from each high frequency oscillator to a set level for treating the object by at least three levels or more. The control unit controls the increasing timing of the output of each high frequency transmitter in order to increase the output from the second high frequency transmitter prior to the output from the first high frequency transmitter in the process to gradually increase the high frequency power to the set level. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了平滑地产生等离子体，进一步减少对待处理物体的任何损坏，并进一步降低高频电源或匹配单元等上的负载。解决方案：该等离子体处理装置设置有布置在处理室中的下电极4，放置有待处理物体，布置成面对处理室中的下电极的上电极21，用于向上电极施加高频电力的第一高频发射器29，用于向下电极施加高频电力的第二高频振荡器18，以及用于逐渐增加每个高频振荡器的输出的控制单元20 用于将对象处理至少三级以上的设定级别。控制单元控制每个高频发射机的输出的增加的定时，以便在从第一高频发射机的输出之前增加来自第二高频发射机的输出，以逐渐将高频功率增加到该组水平。版权所有（C）2005，JPO＆NCIPI

10. 发明专利

JP2015005755A プラズマ処理装置およびプラズマ処理方法、ならびにコンピュータ読み取り可能な記憶媒体有权
标题翻译：等离子体处理装置和等离子体处理方法以及由计算机读取的存储介质
公开(公告)号：JP2015005755A
公开(公告)日：2015-01-08
申请号：JP2014148506
申请日：2014-07-22
申请人：東京エレクトロン株式会社 , Tokyo Electron Ltd
发明人： KOSHIISHI AKIRA , SUGIMOTO MASARU , HIUGA KUNIHIKO , KOBAYASHI NORIYUKI , KOSHIMIZU CHISHIO , OTANI RYUJI , KIBI KAZUO , SAITO MASASHI , MATSUMOTO NAOKI , OYA YOSHINOBU , IWATA MANABU , YANO DAISUKE , YAMAZAWA YOHEI , HANAOKA HIDETOSHI , HAYAMIZU TOSHIYASU , YAMAZAKI HIROKI , SATO MANABU
IPC分类号： H01L21/3065 , C23C16/509 , H01J37/32 , H01L21/02 , H01L21/311 , H05H1/46
CPC分类号： H01L21/31116 , H01J37/32091 , H01J37/32165 , H01J37/32532 , H01J2237/3342 , H01L21/31138
摘要：【課題】チャンバ内壁や絶縁体等のチャンバ内部材への堆積物の付着を有効に防止することができるプラズマ処理装置を提供する。【解決手段】チャンバ10に互いに対向して配置される上部電極34およびウエハ支持用の下部電極16を有し、上部電極34にプラズマ形成用の高周波電力を印加する第1の高周波電源48を接続し、下部電極16にイオン引き込み用の高周波電力を出力する第2の高周波電源90を接続し、上部電極34に可変直流電源50を接続し、上部電極34に印加された直流電源50からの直流電圧に基づく電流をプラズマを介して逃がすために、上部電極34の近傍に設置され常時接地されている導電性部材91を設け、第1の高周波電源48および第2の高周波電源90から高周波電力を印加し、直流電源50から直流電圧を印加しつつ、チャンバ10内に処理ガスを供給してプラズマエッチングを行う。【選択図】図15
摘要翻译：要解决的问题：提供一种等离子体处理装置，其能够有效地防止沉积物附着到腔室的内壁和诸如绝缘体的室内的构件。解决方案：等离子体处理装置包括室10，其包括上电极 34和用于支撑晶片的下电极16，其被布置为彼此相对。用于施加用于等离子体形成的高频电力的第一高频电源48连接到上电极34; 并且用于输出用于吸收离子的高频电力的第二高频电源90连接到下电极16.可变直流电源50连接到上电极34.导电部件91安装在上部电极34的附近并且始终接地，以便基于来自直流电源50的直流电压通过等离子体电流放电并被施加到上部电极34。等离子体处理装置执行等离子体通过施加来自第一高频电源48和第二高频电源90的高频电力进行蚀刻，并且在施加来自直流电源50的直流电压的同时，将处理气体供给到室10内。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式