专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JPH08222553A PROCESSOR AND PROCESSING 失效
公开(公告)号：JPH08222553A
公开(公告)日：1996-08-30
申请号：JP5186395
申请日：1995-02-16
申请人： TOKYO ELECTRON LTD , TEL YAMANISHI KK
发明人： HIMORI SHINJI
IPC分类号： H05H1/46 , C23F4/00 , H01L21/302 , H01L21/3065
摘要： PURPOSE: To provide uniform density of plasma for processing a target, by providing electron collecting means such that electrons migrating in a processing chamber migrate in a substantially horizontal direction to the processing surface of the target. CONSTITUTION: A processing section 3 has, on the orbital axis of electrons, an electron collecting means 25 for introducing accelerated electrons and collecting these electrons. A DC source voltage 37 is applied between an electron supply electrode 19 and the electron collecting means 25, such as, a collecting electrode, for collecting the electrons in the processing section 3. Thus, an electron beam for exciting a reactive gas, such as, Cl2 gas, can be stably collected by the collecting electrode 25 as the end side of the processing section 3 from the start side thereof. Therefore, the density of plasma generated by excitation of the Cl2 gas on an electron beam path can be made uniform on the start side and the end side.

2. 发明专利

JPH0722339A FORMATION OF THIN FILM 失效
公开(公告)号：JPH0722339A
公开(公告)日：1995-01-24
申请号：JP16564493
申请日：1993-07-05
申请人： TOSHIBA CORP , TOKYO ELECTRON LTD , TEL YAMANISHI KK
发明人： ITO HITOSHI , SUGURO KYOICHI , HAYASAKA NOBUO , OKANO HARUO , HIMORI SHINJI , NAGASEKI KAZUYA , MOCHIZUKI SHUJI
IPC分类号： H01L21/205 , C23C16/04 , C23C16/34 , H01L21/302 , H01L21/3065 , H01L21/768
摘要： PURPOSE:To provide a method of forming a thin film, which is capable of performing a film formation of a high directional property even if a groove formed in the surface of a semiconductor substrate is formed into a tapered form in a high aspect ratio. CONSTITUTION:A method of forming a thin film is performed in a constitution having a process, in which the interior of a film-forming chamber, wherein a semiconductor substrate 1 with a groove formed in its surface is housed, is evacuated at a pressure of 10 Torr or lower and thereafter, TiCl4, hydrogen, nitrogen and NF3 gas are introduced in the film-forming chamber, then, a process, in which these gases are brought into a plasma state to form selectively a TiN thin film 2 excepting the sidewall part of the groove.

3. 发明专利

JPH06291063A SURFACE TREATMENT DEVICE 失效
公开(公告)号：JPH06291063A
公开(公告)日：1994-10-18
申请号：JP9681793
申请日：1993-03-31
申请人： TOSHIBA CORP , TEL YAMANISHI KK
发明人： ITO HITOSHI , SUGURO KYOICHI , HAYASAKA NOBUO , OKANO HARUO , OKUMURA KATSUYA , NAGASEKI KAZUYA , HIMORI SHINJI , MOCHIZUKI SHUJI
IPC分类号： B01J19/08 , C23C16/48 , C23F4/00 , H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/31 , H05H1/46
摘要： PURPOSE:To provide a surface treatment device utilizing plasma which can prevent the contamination of a substrate to be treated by sputtering the inner wall of a reaction container with ions inside plasma. CONSTITUTION:The device is provided with a reaction container 1 for introducing plasma source gas, a second DC voltage power supply 26 for controlling the potential of the reaction container 1, a support stage 3 which is provided inside the reaction container 1 and on which a substrate 2 to be treated is mounted, a first DC voltage power source 25 for controlling the potential of the support stage 3, a first vacuum container 6 for generating electrons, and an electrode and coils 15 and 17 for introducing an electron beam into a reaction container 1 for turning the plasma source gas into plasma.

4. 发明专利

JP2011040461A Baffle plate and plasma processing apparatus 有权
标题翻译：砂浆和等离子体加工设备
公开(公告)号：JP2011040461A
公开(公告)日：2011-02-24
申请号：JP2009184392
申请日：2009-08-07
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： KOSHIMIZU CHISHIO , HIMORI SHINJI
IPC分类号： H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a baffle plate capable of enhancing a confinement effect of plasma, while securing a conductance, and to provide a plasma processing apparatus.
SOLUTION: The baffle plate 90 is arranged in an inside of a processing chamber for treating a substrate by generating plasma in an inside, and partitions an inside of the processing chamber into a processing space for treating the substrate, and an exhaust space for exhausting gas from the inside of the processing chamber. The baffle plate 90 includes a plurality of openings 91, 92, 93 for the exhausting, and is formed with irregular shapes on a face in a processing chamber side, to form a height difference in heights of peripheral edges of the openings.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供能够在确保电导的同时提高等离子体的约束效果的挡板，并提供等离子体处理装置。解决方案：挡板90布置在处理室的内部，用于通过在内部产生等离子体来处理基板，并将处理室的内部分隔成用于处理基板的处理空间和排气空间用于从处理室的内部排出气体。挡板90包括用于排气的多个开口91,92,93，并且在处理室侧的表面上形成不规则形状，以形成开口的周边高度的高度差。版权所有（C）2011，JPO＆INPIT

5. 发明专利

JP2010080597A Placing stand and plasma treatment apparatus 有权
标题翻译：配置立场和等离子体处理设备
公开(公告)号：JP2010080597A
公开(公告)日：2010-04-08
申请号：JP2008245722
申请日：2008-09-25
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： HIMORI SHINJI , SASAKI YASUHARU
IPC分类号： H01L21/3065
CPC分类号： H01L21/6833 , H01J37/32091
摘要： PROBLEM TO BE SOLVED: To provide a placing stand for preventing deterioration of an insulating film in a semiconductor device on a substrate.
SOLUTION: The placing stand 12 of a plasma treatment apparatus 10 includes: a lower electrode 20 connected to a first high frequency power supply 28 and a second high frequency power supply 29; a dielectric layer 21 embedded at the center of the upper surface of the lower electrode 20; and an electrostatic chuck 22 placed on the dielectric layer 21. An electrode film 37 of the electrostatic chuck 22 meets the following conditions: δ/z≥85 (wherein δ=(ρ
v /(μπf))
1/2 ) and (surface resistivity of wafer W)>(surface resistivity on a center portion 37a of electrode film 37), wherein z is a thickness (m) of the electrode film 37, δ is a skin depth of the electrode film 37 against high frequency power supplied from the first high frequency power supply 28, f is a frequency (Hz) of the high frequency power, π is a circular constant, μ is magnetic permeability (H/m) of the electrode film 37 and ρ
v is a specific resistance (Ω m) of the electrode film 37.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于防止基板上的半导体器件中的绝缘膜的劣化的放置台。解决方案：等离子体处理装置10的放置台12包括：连接到第一高频电源28和第二高频电源29的下电极20; 嵌入在下电极20的上表面的中心的电介质层21; 静电卡盘22的电极膜37满足以下条件：δ/z≥85（其中δ=（ρ v /（μπf））＆lt; SP＆gt; 1/2＆lt; SP＆gt;）和（晶片W的表面电阻率）>（电极膜37的中心部37a的表面电阻率），其中，z为电极膜37的厚度（μm）相对于从第一高频电源28供给的高频电力，电极膜37的皮肤深度为f，为高频功率的频率（Hz），π为圆形常数，μ为磁导率（H / m）电极膜37的电阻率（Ωm）是电极膜37的电阻率（Ωm）。（C）2010，JPO＆INPIT

6. 发明专利

JP2008243973A Placement table for plasma treatment apparatus, and plasma treatment apparatus 有权
标题翻译：等离子体处理装置的放置表和等离子体处理装置
公开(公告)号：JP2008243973A
公开(公告)日：2008-10-09
申请号：JP2007079717
申请日：2007-03-26
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： HIGUMA MASAICHI , HIMORI SHINJI , MATSUYAMA SHOICHIRO , MATSUURA ATSUSHI
IPC分类号： H01L21/683 , H01L21/205 , H01L21/3065
CPC分类号： H01L21/6831 , H01J37/32532 , H01J2237/2001
摘要： PROBLEM TO BE SOLVED: To suppress possibilities of breakage of an electrostatic chuck by suppressing stress to be applied to each part of a placement table which comprises a conductor member which is an electrode for plasma generation, a dielectric layer for increasing in-plane uniformity of plasma treatment, and the electrostatic chuck. SOLUTION: The placement table comprises: the conductor member which is connected to a high-frequency power supply and serves for an electrode for plasma generation and/or an electrode for drawing in ions contained in plasma; the dielectric layer which is formed on top face of the conductor member and uniforms the intensity of a high-frequency electric field in lateral direction on a substrate to be treated which has a different thickness in a central portion and in a peripheral edge portion; and an electrode film for electrostatic chuck which is formed inside the dielectric layer to have the substrate attracted on top face of the dielectric layer by electrostatic attraction force. Because of this structure, stress to be applied to the electrostatic chuck by a temperature change can be suppressed. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题为了通过抑制施加到包括作为等离子体产生用电极的导体构件的放置台的各部分的应力来抑制静电吸盘的破损的可能性，平面等离子体处理的均匀性和静电卡盘。该布置台包括：连接到高频电源并用于等离子体产生的电极的导体部件和/或用于吸收等离子体中所含离子的电极; 所述电介质层形成在所述导体部件的上表面上，并且在中心部分和周边部分具有不同厚度的被处理基板上均匀化横向方向的高频电场的强度; 以及形成在电介质层内部的静电卡盘用电极膜，以使基板通过静电吸引力吸附在电介质层的顶面上。由于这种结构，可以抑制通过温度变化施加到静电卡盘的应力。版权所有（C）2009，JPO＆INPIT

7. 发明专利

JP2006186323A PLASMA PROCESSING APPARATUS 审中-公开
公开(公告)号：JP2006186323A
公开(公告)日：2006-07-13
申请号：JP2005330251
申请日：2005-11-15
申请人： TOKYO ELECTRON LTD , TOSHIBA CORP
发明人： HIMORI SHINJI , IMAI NORIAKI , HORIGUCHI KATSUMI , NEZU TAKAAKI , MATSUYAMA SHOICHIRO , MATSUMARU HIROKI , HAYAMIZU TOSHIYASU , NAGASEKI KAZUYA , SAKAI ITSUKO , OIWA NORIHISA , SUGIYASU YOSHIKAZU
IPC分类号： H01L21/3065 , C23C16/505 , H05H1/46
摘要： PROBLEM TO BE SOLVED: To provide a plasma processing apparatus of capacity coupling type capable of forming uniform plasma efficiently, with a high uniformity within field of plasma treatment, and hardly causing charge up damage. SOLUTION: A plasma processing apparatus of capacity coupling type 100 comprises a chamber 1 held in vacuum atmosphere; a first and a second electrodes 2, 18 one side of which holds a processed substrate W by being arranged to face each other inside the chamber 1; a plasma generating arrangement 10 generating a plasma of processing gas, by forming high frequency field between the first and the second electrodes 2, 18; and a component 25 grounded in direct current by being arranged at an outside location of the processed substrate W in a plasma generating region R in the chamber 1. COPYRIGHT: (C)2006,JPO&NCIPI

8. 发明专利

JP2004259760A Magnetic field generator for magnetron plasma 有权
公开(公告)号：JP2004259760A
公开(公告)日：2004-09-16
申请号：JP2003046097
申请日：2003-02-24
申请人： Shin Etsu Chem Co Ltd , Tokyo Electron Ltd , 信越化学工業株式会社 , 東京エレクトロン株式会社
发明人： TEZUKA KAZUYUKI , HIMORI SHINJI , NAGASEKI KAZUYA , MIYATA KOJI
IPC分类号： H05H1/46 , B01J19/08 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a magnetic field generator for a magnetron plasma which can easily form a multi-polar magnetic field corresponding to a substrate to be processed of different size and which can properly process the substrate to be processed of different size. SOLUTION: The number of poles is reduced to twelve pieces by changing the directions of the magnet segments 22 of the magnetic field generator 21 for the magnetron plasma and removing (thinning out) the magnet segments 22 at an intermediate part. Thus, the lines of magnetic force formed between the adjacent poles each becomes the state that the lined of the magnetic force are intruded into the interior of a vacuum chamber 1, and becomes the state that the multi-polar magnetic field is formed up to the periphery of a semiconductor wafer W having a diameter of 8 inches. COPYRIGHT: (C)2004,JPO&NCIPI

9. 发明专利

JP2003257940A PLASMA TREATMENT DEVICE AND POWER FEEDING MEMBER THEREFOR 审中-公开
公开(公告)号：JP2003257940A
公开(公告)日：2003-09-12
申请号：JP2002054225
申请日：2002-02-28
申请人： TOKYO ELECTRON LTD
发明人： HAYASHI DAISUKE , HIMORI SHINJI , MATSUURA ATSUSHI
IPC分类号： H05H1/46 , C23C16/509 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a plasma treatment device having a power feeding member capable of performing plasma treatment safely and efficiently by insulating an electrode from conductive heat. SOLUTION: Working gas is introduced into a gastight treatment container 102, and high frequency power is applied for plasma formation by the working gas. A power feeding member 150 is provided in a plasma etching device 100 for performing specified plasma treatment for the treatment surface of a semiconductor wafer W, and electrically connects a high frequency power source 114 and a lower electrode 104 with the high frequency power applied thereto. The member 150 is so constituted as to have conductors 152, 156 and an dielectric body 154 forming a layer between the two conductors 152, 156. COPYRIGHT: (C)2003,JPO

10. 发明专利

JP2014135512A Plasma etching method 有权
标题翻译：等离子体蚀刻法
公开(公告)号：JP2014135512A
公开(公告)日：2014-07-24
申请号：JP2014071719
申请日：2014-03-31
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： MATSUDO TATSUO , HIMORI SHINJI , IMAI NORIAKI , OSE TAKESHI , ABE ATSUSHI , KATSUNUMA TAKAYUKI
IPC分类号： H01L21/3065 , H05H1/46
CPC分类号： H01L21/3065 , H01J37/32091 , H01J37/32146 , H01J37/32165
摘要： PROBLEM TO BE SOLVED: To enhance the in-plane uniformity of plasma processing while enhancing the stability and reliability of plasma processing, by improving occurrence of charging damage significantly in a plasma processing apparatus.SOLUTION: An upper electrode 38 and a lower electrode 12 are arranged in parallel in a processing container 10 that can be evacuated. Process gas containing Ogas is supplied to the processing space in the processing container 10, and a first high frequency wave having a frequency of 30 MHz or more is applied to the lower electrode 12 from a first high frequency power supply 32 via a first matching unit 34. A control unit 68 controls the first high frequency power supply 32 so that the first high frequency, contributive to plasma generation, alternately repeats a first period having a first amplitude for generating plasma, and a second period having a second amplitude for not generating plasma substantially (the first period is 2-50 μsec, the second period is 2 μsec or more, the cycle is 4-200 μsec).
摘要翻译：要解决的问题：通过在等离子体处理装置中显着提高充电损伤的发生，提高等离子体处理的面内均匀性，同时提高等离子体处理的稳定性和可靠性。解决方案：上电极38和下电极12 平行布置在可以抽真空的处理容器10中。含有O气的工艺气体被供给到处理容器10中的处理空间，并且经由第一匹配单元从第一高频电源32向下电极12施加频率为30MHz以上的第一高频波控制单元68控制第一高频电源32，使得有助于等离子体产生的第一高频交替地重复具有用于产生等离子体的第一幅度的第一周期，以及具有用于不产生的第二幅度的第二周期基本上等离子体（第一周期为2-50微秒，第二周期为2微秒或更长，周期为4-200微秒）。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式