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1. 发明专利

JP2009071292A Plasma processing apparatus, plasma processing method, and storage medium 有权
标题翻译：等离子体处理装置，等离子体处理方法和储存介质
公开(公告)号：JP2009071292A
公开(公告)日：2009-04-02
申请号：JP2008207948
申请日：2008-08-12
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： MATSUDO TATSUO , HIMORI SHINJI , IMAI NORIAKI , OSE TAKESHI , ABE ATSUSHI , KATSUNUMA TAKAYUKI
IPC分类号： H01L21/3065 , C23C14/54 , C23C16/52 , H01L21/31 , H05H1/46
CPC分类号： H01L21/3065 , H01J37/32091 , H01J37/32146 , H01J37/32165
摘要： PROBLEM TO BE SOLVED: To improve the in-plane uniformity in a plasma processing, while largely reducing the occurrence of charging damage to improve performance stability and reliability in the plasma processing, in a plasma processing apparatus.
SOLUTION: An upper electrode 38 and a bottom electrode 12 are arranged in parallel at a processing chamber 10 enabling evacuation. A first radio frequency is applied from a first radio frequency power supply unit 32 through a first matching circuit 34 to the bottom electrode 12. A control unit 68 controls the first radio frequency power supply unit 32, so that a first period at which the first radio frequency power has a first amplitude for generating a plasma and a second period at which the first radio frequency power has a second amplitude for generating substantially no plasma are alternately repeated at predetermined intervals.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了提高等离子体处理中的面内均匀性，在等离子体处理装置中，同时极大地减少充电损坏的发生，从而提高等离子体处理中的性能稳定性和可靠性。解决方案：上部电极38和底部电极12平行布置在能够排出的处理室10中。第一射频从第一射频电源单元32通过第一匹配电路34施加到底电极12.控制单元68控制第一射频电源单元32，使得第一时段射频功率具有用于产生等离子体的第一幅度，并且以预定间隔交替地重复第一射频功率具有用于基本上不产生等离子体的第二振幅的第二周期。版权所有（C）2009，JPO＆INPIT

2. 发明专利

JP2014135512A Plasma etching method 有权
标题翻译：等离子体蚀刻法
公开(公告)号：JP2014135512A
公开(公告)日：2014-07-24
申请号：JP2014071719
申请日：2014-03-31
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： MATSUDO TATSUO , HIMORI SHINJI , IMAI NORIAKI , OSE TAKESHI , ABE ATSUSHI , KATSUNUMA TAKAYUKI
IPC分类号： H01L21/3065 , H05H1/46
CPC分类号： H01L21/3065 , H01J37/32091 , H01J37/32146 , H01J37/32165
摘要： PROBLEM TO BE SOLVED: To enhance the in-plane uniformity of plasma processing while enhancing the stability and reliability of plasma processing, by improving occurrence of charging damage significantly in a plasma processing apparatus.SOLUTION: An upper electrode 38 and a lower electrode 12 are arranged in parallel in a processing container 10 that can be evacuated. Process gas containing Ogas is supplied to the processing space in the processing container 10, and a first high frequency wave having a frequency of 30 MHz or more is applied to the lower electrode 12 from a first high frequency power supply 32 via a first matching unit 34. A control unit 68 controls the first high frequency power supply 32 so that the first high frequency, contributive to plasma generation, alternately repeats a first period having a first amplitude for generating plasma, and a second period having a second amplitude for not generating plasma substantially (the first period is 2-50 μsec, the second period is 2 μsec or more, the cycle is 4-200 μsec).
摘要翻译：要解决的问题：通过在等离子体处理装置中显着提高充电损伤的发生，提高等离子体处理的面内均匀性，同时提高等离子体处理的稳定性和可靠性。解决方案：上电极38和下电极12 平行布置在可以抽真空的处理容器10中。含有O气的工艺气体被供给到处理容器10中的处理空间，并且经由第一匹配单元从第一高频电源32向下电极12施加频率为30MHz以上的第一高频波控制单元68控制第一高频电源32，使得有助于等离子体产生的第一高频交替地重复具有用于产生等离子体的第一幅度的第一周期，以及具有用于不产生的第二幅度的第二周期基本上等离子体（第一周期为2-50微秒，第二周期为2微秒或更长，周期为4-200微秒）。

3. 发明专利

JP2012064819A Leak check method, leak check device, and program 审中-公开
标题翻译：泄漏检查方法，泄漏检查装置和程序
公开(公告)号：JP2012064819A
公开(公告)日：2012-03-29
申请号：JP2010208682
申请日：2010-09-17
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： NAGAIKE HIROSHI , IMAI NORIAKI
IPC分类号： H01L21/3065 , C23C16/44
摘要： PROBLEM TO BE SOLVED: To provide a leak check method and a leak check device capable of improving check accuracy and reducing a check time in a simple method.SOLUTION: The leak check method comprises: a step of exhausting the inside of a vacuum vessel by an exhaust device; a step of measuring a total pressure and a partial pressure of moisture in the vacuum vessel after stopping the exhaust; and a step of checking a leak rate of the vacuum vessel based on the value obtained by subtracting the measured partial pressure of the moisture from the measured total pressure when a prescribed time elapses after stopping the exhaust.
摘要翻译：要解决的问题：提供一种能够以简单的方法提高检查精度并减少检查时间的泄漏检查方法和泄漏检查装置。泄漏检查方法包括：通过排气装置排出真空容器内部的步骤; 在停止排气之后测量真空容器中的总压力和分压的步骤; 以及基于在停止排气后经过规定时间后，从测定的总压力中减去测定的湿气分压而得到的值，来检查真空容器的泄漏率的步骤。版权所有（C）2012，JPO＆INPIT

4. 发明专利

JP2007273718A Apparatus and method for plasma treatment 审中-公开
标题翻译：用于血浆处理的装置和方法
公开(公告)号：JP2007273718A
公开(公告)日：2007-10-18
申请号：JP2006097446
申请日：2006-03-31
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： YAMAZAWA YOHEI , IMAI NORIAKI
IPC分类号： H01L21/3065 , H01L21/205 , H05H1/46
摘要： PROBLEM TO BE SOLVED: To improve plasma treatment by discharging a constituent necessary for processing a substrate from a member exposed to the inside of a treatment vessel, when generating plasma in the treatment container for processing the substrate. SOLUTION: An apparatus 1 for plasma treatment processes the substrate W, by supplying high-frequency power from a high-frequency power source to at least one of an upper electrode 20 and a lower electrode 12 provided in the treatment vessel 2 in a vertically facing relation for generating a plasma P in the vessel 2. A constituent discharging member 33 for discharging the constituents necessary for the substrate W processing by making of ions incident into the plasma P generated in the vessel 2 is provided exposed in the vessel 2. A variable impedance circuit 41, which varies the impedance for frequency of the high-frequency power source on the side of the member 33 for the plasma P generated in the vessel 2, is connected to the member 33. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：通过从暴露于处理容器内部的部件排出由基板处理所需的部件，在处理基板的处理容器中产生等离子体来改善等离子体处理。解决方案：用于等离子体处理的装置1通过从高频电源向设置在处理容器2中的上电极20和下电极12中的至少一个提供高频电源来处理衬底W. 用于在容器2中产生等离子体P的垂直方向的关系。用于通过使入射到容器2中产生的等离子体P中的离子的进行处理来排出基板W所需的成分的构成排出构件33暴露在容器2中在容器2中产生的等离子体P的构件33的一侧改变高频电源的频率阻抗的可变阻抗电路41连接到构件33上。（COPYRIGHT：（ C）2008，JPO＆INPIT

5. 发明专利

JP2006165093A Plasma processing device 审中-公开
标题翻译：等离子体加工装置
公开(公告)号：JP2006165093A
公开(公告)日：2006-06-22
申请号：JP2004350995
申请日：2004-12-03
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： HIMORI SHINJI , HIGUCHI KIMIHIRO , MATSUDO TATSUO , IIJIMA ETSUO , ITO HIROHARU , MATSUYAMA SHOICHIRO , IMAI NORIAKI , NAGASEKI KAZUYA
IPC分类号： H01L21/3065 , C23C16/509 , H01L21/205 , H05H1/46
摘要： PROBLEM TO BE SOLVED: To provide a capacity-coupled plasma processing device that performs plasma processing with high in-plane uniformity and hardly causes the charge-up damage. SOLUTION: The capacity-coupled plasma processing device 100 has a chamber 1 held in a vacuum atmosphere, first and second electrodes 2 and 18 arranged in parallel with each other in the chamber 1, and a plasma generating mechanism 10 which generates the plasma of a processing gas by forming a high-frequency electric field between the electrodes 2 and 18. In the device 100, the first electrode 2 supports a wafer W and, at the same time, functions as a cathode electrode to which high-frequency electric power is applied, the second electrode 18 functions as a grounded anode electrode, and the surface of the electrode 18 facing the first electrode 2 is composed of a conductive material 18c. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种以高的面内均匀性进行等离子体处理的容量耦合等离子体处理装置，并且几乎不引起充电损坏。解决方案：容量耦合等离子体处理装置100具有保持在真空气氛中的室1，在室1中彼此平行布置的第一和第二电极2和18以及等离子体产生机构10，其产生通过在电极2和18之间形成高频电场来处理气体的等离子体。在器件100中，第一电极2支撑晶片W，并且同时用作高频电极施加电力，第二电极18用作接地阳极电极，并且面对第一电极2的电极18的表面由导电材料18c组成。版权所有（C）2006，JPO＆NCIPI

6. 发明专利

JP2006186323A PLASMA PROCESSING APPARATUS 审中-公开
公开(公告)号：JP2006186323A
公开(公告)日：2006-07-13
申请号：JP2005330251
申请日：2005-11-15
申请人： TOKYO ELECTRON LTD , TOSHIBA CORP
发明人： HIMORI SHINJI , IMAI NORIAKI , HORIGUCHI KATSUMI , NEZU TAKAAKI , MATSUYAMA SHOICHIRO , MATSUMARU HIROKI , HAYAMIZU TOSHIYASU , NAGASEKI KAZUYA , SAKAI ITSUKO , OIWA NORIHISA , SUGIYASU YOSHIKAZU
IPC分类号： H01L21/3065 , C23C16/505 , H05H1/46
摘要： PROBLEM TO BE SOLVED: To provide a plasma processing apparatus of capacity coupling type capable of forming uniform plasma efficiently, with a high uniformity within field of plasma treatment, and hardly causing charge up damage. SOLUTION: A plasma processing apparatus of capacity coupling type 100 comprises a chamber 1 held in vacuum atmosphere; a first and a second electrodes 2, 18 one side of which holds a processed substrate W by being arranged to face each other inside the chamber 1; a plasma generating arrangement 10 generating a plasma of processing gas, by forming high frequency field between the first and the second electrodes 2, 18; and a component 25 grounded in direct current by being arranged at an outside location of the processed substrate W in a plasma generating region R in the chamber 1. COPYRIGHT: (C)2006,JPO&NCIPI

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