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1. 发明专利

JP2014187402A Plasma etching apparatus, and plasma etching method 有权
标题翻译：等离子体蚀刻装置和等离子体蚀刻方法
公开(公告)号：JP2014187402A
公开(公告)日：2014-10-02
申请号：JP2014139735
申请日：2014-07-07
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： KOSHIMIZU CHISHIO , YAMAWAKI JUN , MATSUDO TATSUO , SAITO MASASHI
IPC分类号： H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a plasma etching apparatus, etc. by which the worsening of a processed shape in a peripheral part of a substrate to be processed can be suppressed, and the in-plane uniformity of processing can be enhanced.SOLUTION: A plasma etching apparatus comprises: a vacuum process chamber; a table provided in the vacuum process chamber to set a substrate on; a gas supply mechanism for supplying a process gas into the vacuum process chamber; a mechanism for generating plasma of the process gas; a focus ring provided to surround the substrate; an annular member provided to surround the periphery of the focus ring; a cooling mechanism for cooling the focus ring; and a heating mechanism for heating by irradiating the annular member with light from a heating light source provided outside the vacuum process chamber through an insulating member provided under the annular member. The light from the heating light source has a wavelength coincident with an absorption wavelength of the annular member and a transmission wavelength to the insulating member.
摘要翻译：要解决的问题：提供一种等离子体蚀刻装置等，通过该等离子体蚀刻装置等可以抑制待处理的基板的周边部分的加工形状的恶化，并且可以提高加工的面内均匀性。解决方案：等离子体蚀刻装置包括：真空处理室; 设置在真空处理室中以设置基板的台面; 用于将处理气体供给到真空处理室中的气体供给机构; 用于产生处理气体的等离子体的机构; 设置为围绕所述基板的聚焦环; 设置成围绕聚焦环的周边的环形构件; 用于冷却聚焦环的冷却机构; 以及加热机构，用于通过设置在真空处理室外部的加热光源照射环形构件，通过设置在环状构件下方的绝缘构件进行加热。来自加热光源的光具有与环状构件的吸收波长一致的波长和到绝缘构件的透射波长。

2. 发明专利

JP2012202693A Plasma processing apparatus and temperature measuring method 有权
标题翻译：等离子体加工装置和温度测量方法
公开(公告)号：JP2012202693A
公开(公告)日：2012-10-22
申请号：JP2011064463
申请日：2011-03-23
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： MATSUDO TATSUO
IPC分类号： G01K11/12 , G01K1/14
CPC分类号： G01K5/48 , G01K11/125
摘要： PROBLEM TO BE SOLVED: To provide a plasma processing apparatus and temperature measuring method, which allow for temperature measurement of an object to be temperature-measured in a processing chamber using a low coherence interferometer, without forming a hole in a table or an upper electrode of the plasma processing apparatus, enabling more precise and uniform plasma processing of a base plate to be performed.SOLUTION: A plasma processing apparatus is provided with a light source-side collimator disposed outside of a light source-side window and a light receiving-side collimator disposed outside of a light receiving-side window. A measuring beam emitted from the light source-side collimator transmits through the light source-side window, so that the surface of an object to be temperature-measured is obliquely exposed to the beam. The reflected measuring beam transmits through the light receiving-side window so as to enter the light receiving-side collimator, allowing for temperature measurement of the object to be temperature-measured in a processing chamber using a low coherence interferometer.
摘要翻译：要解决的问题：提供一种等离子体处理装置和温度测量方法，其允许使用低相干干涉仪在处理室中进行温度测量的温度测量，而不在工作台中形成孔或等离子体处理装置的上电极，能够对要执行的基板进行更精确和均匀的等离子体处理。解决方案：等离子体处理装置设置有设置在光源侧窗口外部的光源侧准直器和设置在光接收侧窗口外侧的光接收侧准直器。从光源侧准直器发射的测量光束通过光源侧窗口传播，使得要被温度测量的物体的表面倾斜地暴露于光束。反射的测量光束通过光接收侧窗口透射，以进入光接收侧准直器，从而允许在使用低相干干涉仪的处理室中进行温度测量。版权所有（C）2013，JPO＆INPIT

3. 发明专利

JP2012202692A Temperature measuring device and temperature measuring method 有权
标题翻译：温度测量装置和温度测量方法
公开(公告)号：JP2012202692A
公开(公告)日：2012-10-22
申请号：JP2011064462
申请日：2011-03-23
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： MATSUDO TATSUO , KOSHIMIZU CHISHIO
IPC分类号： G01K11/12
CPC分类号： G01K11/12 , G01J5/0007 , G01J5/0044 , G01J5/0821 , G01J2005/583
摘要： PROBLEM TO BE SOLVED: To provide a temperature measuring device and a temperature measuring method that can simultaneously measuring temperatures of temperature measurement objects in a plurality of processing chambers.SOLUTION: The temperature measuring device includes: first light separation means of separating light from a light sources into a plurality of light beams for measurement; a plurality of second light separation means of each separating the plurality of light beams for measurement into measurement light beams and reference light beams; third light separation means of separating measurement light into (n) first to (n)th measurement light beams; reference light reflection means of reflecting the plurality of reference light beams respectively; one optical path length varying means of varying optical path lengths of the reference light beams reflected by the reference light reflection means; and a plurality of optical detectors for measuring interference between the first to (n)th measurement light beams reflected by the temperature measurement objects and the plurality of reference light beams reflected by the reference light reflection means.
摘要翻译：要解决的问题：提供一种能够同时测量多个处理室中的温度测量对象的温度的温度测量装置和温度测量方法。解决方案：温度测量装置包括：将来自光源的光分离成多个用于测量的光束的第一光分离装置; 多个第二光分离装置，每个将所述多个光束分离成测量光束和参考光束; 将测量光分为（n）个第（i）个测量光束的第三光分离装置; 参考光反射装置，分别反射多个参考光束; 由参考光反射装置反射的参考光束改变光路长度的一个光程长度变化装置; 以及多个光检测器，用于测量由温度测量对象反射的第一至第（N）测量光与由参考光反射装置反射的多个参考光之间的干涉。版权所有（C）2013，JPO＆INPIT

4. 发明专利

JP2011204813A Substrate placement table 有权
标题翻译：基板放置表
公开(公告)号：JP2011204813A
公开(公告)日：2011-10-13
申请号：JP2010069084
申请日：2010-03-25
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： MATSUDO TATSUO , KOSHIMIZU CHISHIO
IPC分类号： H01L21/683 , H01L21/3065
CPC分类号： H01L21/67109 , H01L21/67248 , H01L21/6831 , H01L21/68742
摘要： PROBLEM TO BE SOLVED: To provide a substrate placement table with which the temperature of a wafer held on the substrate placement table is accurately measured without contaminating the inside of the chamber or without providing superfluous holes on the substrate placement table.SOLUTION: The substrate placement table has: a placement surface 90a for placing a wafer W; a substrate uplifting unit 80 for lifting up the wafer W from the placement 90a by a lift pin 84; and a light irradiation and receiving unit 87 for irradiating measurement light 88 consisting of coherence light onto the wafer W by using the inside of the lift pin 84 as a light path and receiving reflective light from the front and back surfaces of the wafer W. The light irradiation and receiving unit 87 is fixed to the base plate 86 of the substrate uplifting unit 80.
摘要翻译：要解决的问题：提供一种基板放置台，其中准确地测量保持在基板放置台上的晶片的温度，而不会污染室的内部或者在基板放置台上不提供多余的孔。解决方案：基板放置台具有：用于放置晶片W的放置表面90a; 用于通过升降销84从晶片W提升晶片W的基板升高单元80; 以及光照射和接收单元87，用于通过使用提升销84的内部作为光路将由相干光组成的测量光88照射到晶片W上，并接收来自晶片W的前表面和后表面的反射光。光照射和接收单元87固定到基板提升单元80的基板86上。

5. 发明专利

JP2012069809A Temperature control system 有权
标题翻译：温度控制系统
公开(公告)号：JP2012069809A
公开(公告)日：2012-04-05
申请号：JP2010214347
申请日：2010-09-24
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： YAMAWAKI JUN , KOSHIMIZU CHISHIO , MATSUDO TATSUO , NAGAI KENJI
IPC分类号： H01L21/3065 , C23C16/52 , G05D23/19 , H01L21/203 , H01L21/205
CPC分类号： H01L21/67248 , G01J9/02 , G01J2005/583
摘要： PROBLEM TO BE SOLVED: To provide a temperature control system capable of controlling the temperature of an object to be processed with higher accuracy than prior art.SOLUTION: The temperature control system comprises: a susceptor having a top face on which an object to be processed can be mounted and a passage for a temperature control medium formed inside; temperature measurement means for measuring the temperature of the object to be processed mounted on the top face of the susceptor; first temperature control means for controlling the temperature of the temperature control medium flowing through the passage; and second temperature control means interposed between the susceptor and the first temperature control means and controlling the temperature of the temperature control medium based on the measurement results from the temperature measurement means.
摘要翻译：要解决的问题：提供一种能够以比现有技术更高的精度控制待处理物体的温度的温度控制系统。解决方案：温度控制系统包括：基座，其具有可以安装待加工物体的顶面和用于形成在内部的温度控制介质的通道; 温度测量装置，用于测量安装在基座的顶面上的被加工物体的温度; 用于控制流经通道的温度控制介质的温度的第一温度控制装置; 以及插入在基座和第一温度控制装置之间的第二温度控制装置，并且基于来自温度测量装置的测量结果来控制温度控制介质的温度。版权所有（C）2012，JPO＆INPIT

6. 发明专利

JP2011210853A Method for measuring wear rate 审中-公开
标题翻译：测量磨损率的方法
公开(公告)号：JP2011210853A
公开(公告)日：2011-10-20
申请号：JP2010075631
申请日：2010-03-29
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： MATSUDO TATSUO , KOSHIMIZU CHISHIO
IPC分类号： H01L21/3065
CPC分类号： G01B9/02021 , G01B9/02019 , G01B9/02028 , G01B9/02071 , G01B9/0209 , G01B11/06 , G01B11/0675
摘要： PROBLEM TO BE SOLVED: To provide a wear-out amount measuring method capable of measuring wear-out amount of a consumable member, at desired occasions.SOLUTION: When measuring wear-out amount of a focus ring 25, containing an upper surface 25a exposed to plasma and a lower surface 25b, faces a susceptor, a reference piece 57 containing a lower surface 57b facing the susceptor and an upper surface 57a facing the focus ring 25 are thermally connected to the focus ring 25. By irradiating a low-coherence light beam to the focus ring 25 which is vertical with respect to the upper surface 25a and the lower surface 25b, a first optical path length of the low-coherence light that reciprocates along the thickness direction inside the focus ring 25 is measured. By having the low-coherence light beam irradiated to the reference piece 57 which is vertical with respect to the upper surface 57a and the lower surface 57b, a second optical path length of the low-coherence light that reciprocates along thickness direction in the reference piece 57 is measured. Based on the ratio between the first optical path length and the second optical path length, the worn-out amount of the focus ring 25 is calculated.
摘要翻译：要解决的问题：提供能够在期望的时间测量可消耗部件的磨损量的磨损量测量方法。解决方案：当测量包含上表面25a暴露的聚焦环25的磨损量时与等离子体和下表面25b面对基座，包含面向基座的下表面57b的参考件57和面向聚焦环25的上表面57a热连接到聚焦环25.通过照射低相干光射到相对于上表面25a和下表面25b垂直的对焦环25，测量沿聚焦环25内的厚度方向往复运动的低相干光的第一光程长度。通过使低相干光束照射到相对于上表面57a和下表面57b垂直的参考片57，在参考片中沿厚度方向往复运动的低相干光的第二光程长度测量57。基于第一光路长度与第二光程长度的比例，计算聚焦环25的磨损量。

7. 发明专利

JP2011181578A Method for heating part in processing chamber of semiconductor manufacturing apparatus and semiconductor manufacturing apparatus 有权
标题翻译：半导体制造装置和半导体制造装置的加热室加热部分的方法
公开(公告)号：JP2011181578A
公开(公告)日：2011-09-15
申请号：JP2010042036
申请日：2010-02-26
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： YAMAWAKI JUN , KOSHIMIZU CHISHIO , MATSUDO TATSUO
IPC分类号： H01L21/3065 , C23C16/44 , H01L21/31 , H05H1/46
CPC分类号： H01L21/67115 , F27B17/0025 , F27D11/12
摘要： PROBLEM TO BE SOLVED: To provide a method of heating a part in a processing chamber of a semiconductor manufacturing apparatus that heats the part in the processing chamber efficiently with simple constitution, and to provide the semiconductor manufacturing apparatus. SOLUTION: The present invention relates to the method of heating the part in the processing chamber of the semiconductor manufacturing apparatus having a substrate stored in the processing chamber and performing a predetermined process on the substrate. A heating light source, which generates heating light having a wavelength band capable of passing through a first part in the processing chamber and being absorbed into a second part in the processing chamber made of a material different from that of the first part in the processing chamber, is provided outside the processing chamber, and the heating light is passed through the first part in the processing chamber and irradiates the second part in the processing chamber with the heating light, thereby heating the second part in the processing chamber. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：解决的问题：提供一种加热半导体制造装置的处理室中的部件的方法，其以简单的结构有效地加热处理室中的部件，并提供半导体制造装置。解决方案：本发明涉及加热半导体制造装置的处理室中的部件的方法，该半导体制造装置具有存储在处理室中的基板并在基板上执行预定处理。一种加热光源，其产生具有能够通过处理室中的第一部分的波长带并被吸收到处理室中的第二部分的加热光，所述第二部分由与处理室中的第一部分不同的材料制成设置在处理室的外侧，使加热光通过处理室内的第一部分，利用加热灯对处理室内的第二部分进行照射，从而加热处理室内的第二部分。版权所有（C）2011，JPO＆INPIT

8. 发明专利

JP2009231439A Plasma processor 有权
标题翻译：等离子体处理器
公开(公告)号：JP2009231439A
公开(公告)日：2009-10-08
申请号：JP2008073376
申请日：2008-03-21
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： MATSUDO TATSUO , HIMORI SHINJI
IPC分类号： H01L21/3065 , H01L21/205
CPC分类号： H01L21/3065 , H01J37/32091 , H01J37/32577 , H01J37/32642
摘要： PROBLEM TO BE SOLVED: To enhance in-plane uniformity of a plasma process in a wide RF frequency area and also in a wide RF power area. SOLUTION: A susceptor (a lower electrode) 12 with a semiconductor wafer A placed thereon and an upper electrode 38 are arranged in parallel so as to face each other in a chamber 10. The first high frequency for generating plasma is applied to the susceptor 12 from the first high frequency power source 32. The side surfaces and upper surface peripheral part (an edge) of the susceptor 12 are covered with an RF grounding member 18 extending vertically upward from the bottom wall of the chamber 10 by holding a dielectric body 16 between the susceptor 12 and the member 18. A fin member 25 is arranged on an exhaust ring 22 to be attached to the upper part of an exhaust passage 20. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了增强宽RF频率区域以及宽RF功率区域中的等离子体处理的面内均匀性。解决方案：将其上放置有半导体晶片A的基座（下电极）12和上电极38平行布置成在室10中彼此面对。用于产生等离子体的第一高频被施加到来自第一高频电源32的基座12.基座12的侧表面和上表面周边部分（边缘）被从接收器10的底壁垂直向上延伸的RF接地件18覆盖，在基座12和构件18之间的电介质体16.翅片构件25布置在排气环22上以附接到排气通道20的上部。（C）2010年，JPO和INPIT

9. 发明专利

JP2008249537A Gas analyzer and substrate processing apparatus 有权
标题翻译：气体分析仪和基板处理装置
公开(公告)号：JP2008249537A
公开(公告)日：2008-10-16
申请号：JP2007092192
申请日：2007-03-30
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： MATSUDO TATSUO , KOSHIMIZU CHISHIO , SUZUKI TOMOHIRO , ABE ATSUSHI
IPC分类号： G01N27/62 , G01K5/48 , G01N25/02
CPC分类号： H01J49/16 , G01K5/486 , G01K11/12
摘要： PROBLEM TO BE SOLVED: To provide a gas analyzer capable of precisely measuring the temperature of a sample.
SOLUTION: The gas analyzer comprises a measurement chamber 1 having a mounting stand 1a that a substrate W with a sample m absorbed is mounted, a vacuum pump for reducing a pressure in the measurement chamber 1, a halogen lamp 4 for heating the substrate W with the sample m absorbed, a mass spectrometer 8 inserted in the measurement chamber 1 for detecting gaseous molecules of the sample that are desorbed by the increase of a temperature; and temperature measurement systems 11, 16 that measure the temperature of the substrate W using an interferometer 11 that detects the optical thickness of the substrate W. The temperature of the sample m is equal to that of the substrate W. The temperature of the sample m can precisely be obtained by measuring the temperature of the substrate W using the interferometer 11.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供能够精确测量样品的温度的气体分析仪。气体分析仪包括测量室1，该测量室1具有安装支架1a，其中安装有吸收样品的基板W，用于减小测量室1中的压力的真空泵，用于加热测量室1的卤素灯4 吸收样品的衬底W，插入测量室1中的质谱仪8，用于检测由于温度升高而解吸的样品的气体分子; 以及使用检测基板W的光学厚度的干涉仪11来测量基板W的温度的温度测量系统11,16。样品m的温度等于基板W的温度。样品m的温度可以通过使用干涉仪11测量衬底W的温度来精确地获得。版权所有（C）2009，JPO＆INPIT

10. 发明专利

JP2006165093A Plasma processing device 审中-公开
标题翻译：等离子体加工装置
公开(公告)号：JP2006165093A
公开(公告)日：2006-06-22
申请号：JP2004350995
申请日：2004-12-03
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： HIMORI SHINJI , HIGUCHI KIMIHIRO , MATSUDO TATSUO , IIJIMA ETSUO , ITO HIROHARU , MATSUYAMA SHOICHIRO , IMAI NORIAKI , NAGASEKI KAZUYA
IPC分类号： H01L21/3065 , C23C16/509 , H01L21/205 , H05H1/46
摘要： PROBLEM TO BE SOLVED: To provide a capacity-coupled plasma processing device that performs plasma processing with high in-plane uniformity and hardly causes the charge-up damage. SOLUTION: The capacity-coupled plasma processing device 100 has a chamber 1 held in a vacuum atmosphere, first and second electrodes 2 and 18 arranged in parallel with each other in the chamber 1, and a plasma generating mechanism 10 which generates the plasma of a processing gas by forming a high-frequency electric field between the electrodes 2 and 18. In the device 100, the first electrode 2 supports a wafer W and, at the same time, functions as a cathode electrode to which high-frequency electric power is applied, the second electrode 18 functions as a grounded anode electrode, and the surface of the electrode 18 facing the first electrode 2 is composed of a conductive material 18c. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种以高的面内均匀性进行等离子体处理的容量耦合等离子体处理装置，并且几乎不引起充电损坏。解决方案：容量耦合等离子体处理装置100具有保持在真空气氛中的室1，在室1中彼此平行布置的第一和第二电极2和18以及等离子体产生机构10，其产生通过在电极2和18之间形成高频电场来处理气体的等离子体。在器件100中，第一电极2支撑晶片W，并且同时用作高频电极施加电力，第二电极18用作接地阳极电极，并且面对第一电极2的电极18的表面由导电材料18c组成。版权所有（C）2006，JPO＆NCIPI

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