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1. 发明专利

JPH06177480A SEMICONDUCTOR LASER ELEMENT AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH06177480A
公开(公告)日：1994-06-24
申请号：JP27196692
申请日：1992-10-09
申请人： SHARP KK , HIKARI GIJUTSU KENKYU KAIHATSU
发明人： TANETANI MOTOTAKA , TAKIGUCHI HARUHISA , INOGUCHI KAZUHIKO , KUDO HIROAKI , OKUMURA TOSHIYUKI , SUGAWARA SATOSHI
IPC分类号： H01S5/00 , H01S3/18
摘要： PURPOSE:To obtain a vertical resonator type surface emission semiconductor laser element capable of oscillating only linearly polarized light in the desired direction with excellent selectivity. CONSTITUTION:In a semiconductor laser element, in which laser resonance is generated in the direction vertical to a substrate, a plurality of quantum fine lines 110 confining light are formed to an active layer generated by light. Gains larger than the direction orthogonal to the longitudinal direction of the quantum fine lines 110 are generated in the longitudinal direction of the quantum fine lines 110. Consequently, the direction of polarization of generated laser beams can be conformed to the longitudinal direction of the quantum fine lines 110. The center distances of the adjacent fine lines 110 are set in the wavelength or less of light in an LD element. Accordingly, no higher mode is generated in the oscillation transverse mode of laser beams.

2. 发明专利

JPH04299881A QUANTUM THIN LINE LASER 失效
公开(公告)号：JPH04299881A
公开(公告)日：1992-10-23
申请号：JP6432391
申请日：1991-03-28
申请人： HIKARI GIJUTSU KENKYU KAIHATSU , SHARP KK
发明人： TAKIGUCHI HARUHISA , KUDO HIROAKI , TANETANI MOTOTAKA , SUGAWARA SATOSHI
IPC分类号： H01S5/00 , H01S5/12 , H01S5/20 , H01S5/223 , H01S5/227 , H01S5/34 , H01S5/343
摘要： PURPOSE:To form a quantum thin line semiconductor laser of a current injection type having a two-dimensional quantum level, by arranging a second lamination layer structure containing a second quantum well on the lamination layer section of a first lamination layer structure containing a first quantum well, and enaling determining of the form and size of the quantum thin line by film thickness control. CONSTITUTION:A first un-AlGaAs quantum well 14 is formed so as to be surrounded by three AlGaAs barrier layers 13, 15, 16. A second un-GaAs quantum well 17 is formed in the vicinity of the first quantum well 14. Hence the quantum level energy of intersection regions (b), (c) becomes small as compared with an intersection region (a), so that electrons are confined in the intersection region (a), and a quantum thin line is realized. The level energy of quantum thin line is uniquely determined by the thicknesses of (well widths) of the first and the second quantum wells 14, 17, the thickness of the barrier layer 16, and the forbidden bandwidth of each of the barrier layers 13, 15, 16, 18 and the quantum wells 14, 17.

3. 发明专利

JPH04299880A QUANTUM THIN LINE STRUCTURE AND ITS FORMATION 失效
公开(公告)号：JPH04299880A
公开(公告)日：1992-10-23
申请号：JP6432291
申请日：1991-03-28
申请人： HIKARI GIJUTSU KENKYU KAIHATSU , SHARP KK
发明人： TANETANI MOTOTAKA , KUDO HIROAKI , SUGAWARA SATOSHI , TAKIGUCHI HARUHISA
IPC分类号： H01L21/20 , H01L29/06 , H01L29/12 , H01L29/80 , H01L33/06 , H01L33/14 , H01L33/22 , H01L33/30 , H01S5/00 , H01S5/34
摘要： PURPOSE:To form quantum thin line structure with excellent controllability and reproducibility, by arranging a region having a specified width whose curvature is comparatively small and a region having a specified width whose curvature is comparatively large, in a quantum thin line layer whose thickness is sufficiently smaller than the de Broglie wavelength of electron wave in medium. CONSTITUTION:A quantum thin line layer 104 is constituted of flat parts 106 about 20nm wide and bent parts 107 between them. The thickness of the quantum thin line layer 104 is sufficiently small (thinner than or equal to about 10nm). The radius of carvature of the bent part 107 is equal to or smaller than the de Broglie wavelength (smaller than or equal to 50nm). The potential which exerts influence upon electrons confined in the quantum thin lines (corresponding to the flat parts 106) formed in the above manner is determined by materials constituting the quantum thin line layer 104 and barrier layers 103, 105, the thickness of the quantum thin line layer 104, and the width of the flat parts 106. Hence these parameters can be controlled with excellent controllability and reproducibility in both a crystal growth process and a fine working process.

4. 发明专利

JP2875929B2 失效
公开(公告)号：JP2875929B2
公开(公告)日：1999-03-31
申请号：JP27196692
申请日：1992-10-09
申请人： SHAAPU KK , HIKARI GIJUTSU KENKYU KAIHATSU KK
发明人： TANETANI MOTOTAKA , TAKIGUCHI HARUHISA , INOGUCHI KAZUHIKO , KUDO HIROAKI , OKUMURA TOSHUKI , SUGAWARA SATOSHI
IPC分类号： H01S5/00 , H01S3/18

5. 发明专利

JP2002212735A ORGANIC METAL VAPOR GROWTH APPARATUS AND GASEOUS MATERIAL SUPPLY METHOD 失效
公开(公告)号：JP2002212735A
公开(公告)日：2002-07-31
申请号：JP2001002079
申请日：2001-01-10
申请人： SHARP KK
发明人： SUGAWARA SATOSHI
IPC分类号： C23C16/455 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To grow a semiconductor thin film at a high yield by controlling a gaseous material supplied to each reactor of an organic metal vapor growth apparatus provided with a plurality of reactors. SOLUTION: The organic metal vapor growth apparatus provided with a plurality of the reactors possesses a material supply system for supplying an organic metallic material necessary for the vapor growth and the gaseous material and a gaseous material branch system capable of branching and supplying the gaseous material supplied from the material supply system to a plurality of the reactors and provided with a flow rate control function and a pressure control function.

6. 发明专利

JPH10173236A MANUFACTURE OF GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR LIGHT EMITTING ELEMENT 失效
公开(公告)号：JPH10173236A
公开(公告)日：1998-06-26
申请号：JP33257796
申请日：1996-12-13
申请人： SHARP KK
发明人： FURUKAWA MASAKI , SUGAWARA SATOSHI
IPC分类号： H01L33/16 , H01L33/22 , H01L33/32 , H01L33/36 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To make it possible to form the electrodes required for a light emitting element using an insulating substrate on the rear surface of the substrate by forming recessed sections, such as pits, etc., into the insulating substrate and growing a gallium nitride-based compound semiconductor layer which can be used for the rear-surface electrodes in the recessed sections, and then, forming the electrodes on the grown layer from the rear surface. SOLUTION: After an etching mask 2 for forming a pit structure is formed on the surface of a substrate 1, pits 6 having depths of 100μm are formed by etching the substrate 1 carrying the formed pattern by using the mask 2. Then the substrate is surface-treated at about 1,100 deg.C in an H2 atmosphere and a GaN layer 3 is successively grown on the surface of the substrate 1 including the pits 6. Thereafter, the N-type GaN layer which is the outermost layer 3a of the GaN layer 3 grown in the pits 6 is exposed on the rear surface of the substrate 1 by shaving the rear surface of the substrate 1 carrying the grown GaN layer 3 by polishing or etching and a laminated film of Ti and Al is formed on the N-type GaN layer and a laminated film of Ni and Au is formed on a P-type GaN cap layer on the front surface side of the substrate.

7. 发明专利

JPH0567837A WINDOW-TYPE SEMICONDUCTOR LASER ELEMENT 失效
公开(公告)号：JPH0567837A
公开(公告)日：1993-03-19
申请号：JP22737891
申请日：1991-09-06
申请人： SHARP KK
发明人： TAKIGUCHI HARUHISA , YANO MORICHIKA , INOGUCHI KAZUHIKO , KUDO HIROAKI , NAKANISHI CHITOSE , OKUMURA TOSHIYUKI , SUGAWARA SATOSHI
IPC分类号： H01S5/00 , H01S5/16 , H01S5/20
摘要： PURPOSE:To conform the waveguide modes of the active region inside an element and the window to each other excellently in controllability and form a waveguide path being stable both in vertical and horizontal directions, in a window-type semiconductor laser element. CONSTITUTION:Double hetero structure where an active layer 5 is caught with clad layers 4 and 6 is made on a semiconductor substrate 1. An active region including the active layer 5 is buried in an element by the window waveguide layer 9 as a buried layer. Real guide slab type waveguide path structures, where the window part waveguide layer 9 is caught with window part clad layers 2 and 10 small in the real number parts of complex refractive indexes (large in forbidden band width), is provided at both end faces of the active region. Furthermore, this window is provided with a ridge waveguide path.

8. 发明专利

JPH0563292A SEMICONDUCTOR LASER ELEMENT 失效
公开(公告)号：JPH0563292A
公开(公告)日：1993-03-12
申请号：JP22062491
申请日：1991-08-30
申请人： SHARP KK
发明人： TANETANI MOTOTAKA , KUDO HIROAKI , SUGAWARA SATOSHI , INOGUCHI KAZUHIKO , NAKANISHI CHITOSE , TAKIGUCHI HARUHISA
IPC分类号： H01S5/00
摘要： PURPOSE:To reduce the radiating angle of an optical beam in a direction perpendicular to a substrate and to obtain a beam spot near a true circle by freely designing a distribution of a waveguide refractive index of a direction perpendicular to the substrate without depending upon the intrinsic refractive index of a semiconductor material of an active layer and a clad layer in a semiconductor laser element having a double hetero structure. CONSTITUTION:A double hetero structure, in which an active layer 13 is interposed between a first clad layer 12 and a second clad layer 14 is formed on a substrate 11. The layer 13 has a periodical uneven structure of a sine wave state having an amplitude three times as large as the thickness of the layer in a waveguide direction. An average refractive index nav in which the refractive index near the layer 13 is averaged in a waveguide direction and the refractive indexes nc1 of the layers 12, 14 satisfy a relation formula (nav-Oc1)/nc1

9. 发明专利

JPH0252481A SEMICONDUCTOR LASER DEVICE 失效
公开(公告)号：JPH0252481A
公开(公告)日：1990-02-22
申请号：JP20423188
申请日：1988-08-17
申请人： SHARP KK
发明人： KUDO HIROAKI , TAKIGUCHI HARUHISA , SAKANE CHITOSE , SUGAWARA SATOSHI
IPC分类号： H01S5/00 , H01S5/12 , H01S5/24
摘要： PURPOSE:To obtain a connection efficiency which is equivalent to or more than a conventional secondary diffraction grid also in a third diffraction grid by setting the ratio of width between projecting parts of recessed and projecting parts for a period of recesses and projecting areas within a specific range. CONSTITUTION:Periodical recesses and projecting parts are formed at the interface between an n-type light guiding layer 6 and an n-type clad layer 7 to form a diffraction grid 12. The periodical recessed and projecting parts of this diffraction grid 12 are periodically continuous in the direction and the groove formed by these periodical recessed and projecting parts extends in the direction. The period of the recessed and projecting parts is set so that the diffraction grid may be the third one. A connection efficiency (k) due to difference of a duty ratio (W/LAMBDA) when the period of the diffraction grid is set to LAMBDA(3000Angstrom ) and the width of a projecting part 12a of the diffraction grid is set so that the duty ratio (W/LAMBDA) is formed to be closer to 0.20, 0.5, and 0.8 with the height H of the diffraction grid 12 being 1000Angstrom . Namely, the ratio of width of the projecting part of recessed and projecting parts for the period of the recessed and projecting parts stays within the range of 0.20-0.25, 0.40-0.60, and 0.70-0.95. At this time, even in a third rectangular waveform diffraction grid, a sufficient connection efficiency applied to a semiconductor laser device can be obtained.

10. 发明专利

JP2001168388A GALLIUM NITRIDE COMPOUND SEMICONDUCTOR CHIP, ITS MANUFACTURING METHOD AND GALLIUM NITRIDE COMPOUND SEMICONDUCTOR WAFER 失效
公开(公告)号：JP2001168388A
公开(公告)日：2001-06-22
申请号：JP2000295220
申请日：2000-09-27
申请人： SHARP KK
发明人： SUGAWARA SATOSHI
IPC分类号： C30B33/00 , H01L21/02 , H01L21/205 , H01L29/06 , H01L33/16 , H01L33/32 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To provide a chip structure like having a good shape when a wafer formed with a gallium nitride compound semiconductor is divided into chips and to provide a method for dividing the chips with a higher yield. SOLUTION: The gallium nitride compound semiconductor chip comprises a gallium nitride substrate 1 having the surface (0001) of a wurtzite type crystal as a main surface, and a gallium nitride compound semiconductor crystal 6 formed on the substrate. In this case, at least one of the divided surfaces of the chip is a cleaved surface of the substrate.

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