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1. 发明专利

JP2002261026A DEVICE AND METHOD FOR MANUFACTURING III-V-FAMILY COMPOUND SEMICONDUCTOR 失效
公开(公告)号：JP2002261026A
公开(公告)日：2002-09-13
申请号：JP2001057503
申请日：2001-03-01
申请人： SHARP KK , YAMATO HANDOTAI KK
发明人： OGAWA ATSUSHI , YUASA TAKAYUKI , TSUDA YUZO , ARAKI MASAHIRO , TANETANI MOTOTAKA , OISHI TAKAHIRO
IPC分类号： C30B29/38 , H01L21/20 , H01L21/205 , H01L21/302 , H01L21/3065 , H01S5/323 , H01S5/343
摘要： PROBLEM TO BE SOLVED: To inhibit the generation of warpage and cracks when a III-V-family compound semiconductor with a thick film is to be subjected to crystal growth. SOLUTION: The III-V-family compound semiconductor is manufactured at the surface side of a species substrate 101 until a specific film thickness is reached, an etching gas is supplied to the species substrate 101 from the back side of the species substrate 101 by an etching gas supply pipe 16, the species substrate 101 is removed, and a V-family feed gas is supplied from the V-family raw-material supply pipe 14B to a surface where the species substrate 101 is removed, thus manufacturing the III-V-family compound semiconductor that inhibits defects due to roughness in the surface, canceling influence due to distortion that is generated by the stress difference between a rough GaN surface and a GaN growth surface with excellent crystallizability, and reducing the defects such as the warpage and cracks.

2. 发明专利

JP2001148357A III-N-BASED COMPOUND SEMICONDUCTOR DEVICE 失效
公开(公告)号：JP2001148357A
公开(公告)日：2001-05-29
申请号：JP2000266479
申请日：2000-09-04
申请人： SHARP KK
发明人： OGAWA ATSUSHI , YUASA TAKAYUKI , UEDA YOSHIHIRO , TSUDA YUZO , ARAKI MASAHIRO , TANETANI MOTOTAKA
IPC分类号： C30B29/38 , C23C16/34 , H01L21/203 , H01L21/205 , H01L21/28 , H01L33/06 , H01L33/32 , H01L33/40 , H01S5/042 , H01S5/323 , H01S5/343 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To provide a GaN light emitting element with small contact resistance at an n-type electrode and low threshold voltage or low threshold current density. SOLUTION: A GaN light emitting element includes a GaN substrate 102, a plurality of GaN-based compound semiconductor elements 102 to 110 on the GaN substrate 102, an n-type electrode 101, and a p-type electrode 111. The substrate 102 is of n-type, and the n-type electrode 101 is formed at a nitrogen termination face 102A of the substrate 102. The substrate 102 has n-type impurity with density of 1×1017 to 1×1021 cm-3 preferably.

3. 发明专利

JP2001144332A LED DRIVE METHOD, LED DEVICE, LED LAMP, LED LAMP DRIVE METHOD, AND DISPLAY DEVICE 失效
公开(公告)号：JP2001144332A
公开(公告)日：2001-05-25
申请号：JP32204499
申请日：1999-11-12
申请人： SHARP KK
发明人： KAMIKAWA TAKESHI , ITO SHIGETOSHI , TANETANI MOTOTAKA
IPC分类号： G09G3/20 , G09G3/32 , H01L33/06 , H01L33/32 , H01L33/40 , H01L33/50 , H05B33/08 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To realize an LED lighting circuit which enables an LED element, which changes in luminescent color, depending on the intensity of a drive current, to emit light of constant color even if it is changed in luminous intensity. SOLUTION: An LED device is equipped with an LED element, whose luminescent color is blue-shifted depending on the intensity of a drive current and an LED lighting circuit which drives the LED element to emit light, whose color and intensity are set as required corresponding to color signals c which indicate luminescent color, intensity signals p which indicate luminous intensity, where the LED lighting circuit is composed of a color signal-current signal conversion section which converts the color signals c into current intensity signals i, in accordance with the current intensity- emission wavelength characteristics of the LED element, an arithmetic processing part which calculates and outputs duty signals d resting on the intensity signals p and the current value signals i, so as to make the product of the current value I and the duty D corresponding to the LED luminous intensity which the intensity signals p indicate, and a pulse generator which outputs a pulse current of current value I and duty D as an LED drive current corresponding to the indications of the current value signals i and duty signals d.

4. 发明专利

JPH11103128A GAIN-COUPLED DISTRIBUTED FEEDBACK SEMICONDUCTOR LASER DEVICE AND ITS MANUFACTURE 失效
公开(公告)号：JPH11103128A
公开(公告)日：1999-04-13
申请号：JP21014698
申请日：1998-07-27
申请人： SHARP KK
发明人： YAMAMOTO KEI , KASAI SHUSUKE , TANETANI MOTOTAKA
IPC分类号： H01S5/00 , H01S3/18
摘要： PROBLEM TO BE SOLVED: To provide a gain-coupled distributed feedback semiconductor laser device which can constitute a low-duty absorbent diffraction grating and in which a small absorption loss and a sufficient gain coupling coefficient can be controlled with good reproducibility, by a method wherein a light absorption layer is formed only on a valley part in an uneven shape and a buried layer is formed in a region which is adjacent to the remaining uneven shape. SOLUTION: A clad layer 11, an active layer 12, a guide layer 14 and the like are formed on an n-GaAs substrate 10 by an MOCVD method. In succession, an uneven shape (a triangular wave shape) whose cycle is about 120 nm and whose depth is about 70 nm is etched on the uppermost layer of a growth layer by a two-beam interference exposure method and an etching method. After that, a buried layer 16, a clad layer 17 and a contact layer 18 are regrown and formed by an MOCVD method. In addition, when the buried layer 16 is grown, vertical quantum well(VQW) structures 15 are formed along valley parts in the uneven shape. A VQW light absorption layer can constitute a low-duty absorbent diffraction grating in a self-aligned manner, and a low absorption loss and a sufficient gain coupling coefficient can be controlled with good reproducibility.

5. 发明专利

JPH08192531A USE OF OPTICAL HEAD FOR LASER PRINTER 失效
公开(公告)号：JPH08192531A
公开(公告)日：1996-07-30
申请号：JP19162095
申请日：1995-07-27
申请人： SHARP KK
发明人： TANETANI MOTOTAKA
IPC分类号： B41J2/44 , B41J2/445
摘要： PURPOSE: To enhance reliability, in using an optical head having a plurality of laser beam sources and a light detection element, by detecting the laser beam source lowered in output as trouble by the light detection element and supplying laser beam by the laser beam source other than the troubled laser beam source. CONSTITUTION: The emitted laser beams of semiconductor lasers 9 become the beam 11 introduced from one end surface of a light waveguide layer 4 and the beam 11 is partially diffracted vertically to the incident direction in the light waveguide layer in succession by the interference with the secondary grating formed on the upper surface of the advancing light waveguide layer 4 but the beam diffracted in the direction of a substrate 1 is almost perfectly reflected by a reflecting layer 2 and all of diffracted beams 12 are emitted in the direction of the surface provided with a liquid crystal shutter 6. In the monitoring of the trouble of the semiconductor lasers 9, the optical electromotive force of the photodiode incorporated in each of the semiconductor lasers is used and, if one semiconductor laser is troubled, beam can be supplied so as to be capable of performing printing as a whole.

6. 发明专利

JPH07283215A MANUFACTURE OF OPTICAL INTEGRATED CIRCUIT 失效
公开(公告)号：JPH07283215A
公开(公告)日：1995-10-27
申请号：JP7107194
申请日：1994-04-08
申请人： SHARP KK
发明人： KASAI SHUSUKE , TANETANI MOTOTAKA , MORIOKA TATSUYA , SHIMONAKA ATSUSHI
IPC分类号： G02B6/13 , H01L21/3205
摘要： PURPOSE:To manufacture an optical integrated circuit efficiently at high yield rate and at low cost by simple mask alignment. CONSTITUTION:The first photoresist 306 is coated on an optical waveguide, and the region, on which a microguide 201, a waveguide lens 202, an optical branching filter 203, a phase shifter 204 and two mirrors 205 and 206 are formed, is exposed and removed. The clad layer 103, located on SiO2, is removed by etching using the first resist film 206 which is left after patterning. This substrate is newly coated with the second photoresist 307, the region 207, consisting of the microguide 201, waveguide lens 202, optical branching filter 203 and phase shifter 204, is left and other region is exposed and removed. An Si3N4 core layer 102 and the clad layer 101 under SiO2 are removed by etching using the second resist film 307 and the first resist film 306, which are left after patterning, as a mask.

7. 发明专利

JPH07249229A OPTICALLY RECORDED INFORMATION READING METHOD AND OPTICALLY RECORDED INFORMATION READING DEVICE 失效
公开(公告)号：JPH07249229A
公开(公告)日：1995-09-26
申请号：JP3882594
申请日：1994-03-09
申请人： SHARP KK
发明人： TANETANI MOTOTAKA , MORIOKA TATSUYA , KASAI SHUSUKE , SHIMONAKA ATSUSHI
IPC分类号： G11B7/00 , G11B7/005 , G11B7/135
摘要： PURPOSE:To highly accurately read out a signal from only a certain specific recording medium layer without being affected by other layers by reading out recorded information with high accuracy. CONSTITUTION:Recorded information recorded on a recording medium 107 are read out by executing an optical coherent detection of two lights having two different light frequencies from two semiconductor laser elements 101, 113. Thus, a pseudo signal amplification is made possible to be carried out without generating the increase of an excess noise component which can not be avoided in amplifications using electronic circuits.

8. 发明专利

JPH0745811A STRUCTURE OF OPTICAL INTEGRATED CIRCUIT DEVICE 失效
公开(公告)号：JPH0745811A
公开(公告)日：1995-02-14
申请号：JP19260893
申请日：1993-08-03
申请人： SHARP KK
发明人： TANETANI MOTOTAKA , KASAI SHUSUKE , MORIOKA TATSUYA , SHIMONAKA ATSUSHI
IPC分类号： H01L27/15 , G02B6/122 , G02B6/42 , H01S5/00 , H01S5/022 , H01S5/042 , H01S3/18
摘要： PURPOSE:To provide the structure of an optical integrated circuit which can fulfill the specified mounting accuracy by the alignment of only the mechanical operation of an optical integrated circuit substrate and a semiconductor laser device. CONSTITUTION:A recess 121 is made on the mounting face of a semiconductor laser device 100, and a projection 162 engagable with this recess 121 is made on the semiconductor laser device fixing area 160 on an optical integrated circuit board 150. The section parallel with the layers of these recess and projection 121 and 162 are symmetrical the optical axis (or the axis of the waveguide path of the optical integrated circuit substrate 150). Besides, since it includes a tapered straight line in one part of its contour, the optical axes of both devices are easy to align. The semiconductor laser device 100 and the optical integrated circuit substrate 150 are engaged with each other, using the recess and projection 121 and 162 having such sectional forms as the guide, so the accuracy in processing of both is reflected favorably at alignment, and they can fulfill the specified accuracy with only the mechanical alignment.

9. 发明专利

JPH06177480A SEMICONDUCTOR LASER ELEMENT AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH06177480A
公开(公告)日：1994-06-24
申请号：JP27196692
申请日：1992-10-09
申请人： SHARP KK , HIKARI GIJUTSU KENKYU KAIHATSU
发明人： TANETANI MOTOTAKA , TAKIGUCHI HARUHISA , INOGUCHI KAZUHIKO , KUDO HIROAKI , OKUMURA TOSHIYUKI , SUGAWARA SATOSHI
IPC分类号： H01S5/00 , H01S3/18
摘要： PURPOSE:To obtain a vertical resonator type surface emission semiconductor laser element capable of oscillating only linearly polarized light in the desired direction with excellent selectivity. CONSTITUTION:In a semiconductor laser element, in which laser resonance is generated in the direction vertical to a substrate, a plurality of quantum fine lines 110 confining light are formed to an active layer generated by light. Gains larger than the direction orthogonal to the longitudinal direction of the quantum fine lines 110 are generated in the longitudinal direction of the quantum fine lines 110. Consequently, the direction of polarization of generated laser beams can be conformed to the longitudinal direction of the quantum fine lines 110. The center distances of the adjacent fine lines 110 are set in the wavelength or less of light in an LD element. Accordingly, no higher mode is generated in the oscillation transverse mode of laser beams.

10. 发明专利

JPH0697575A SEMICONDUCTOR LASER 失效
公开(公告)号：JPH0697575A
公开(公告)日：1994-04-08
申请号：JP24507992
申请日：1992-09-14
申请人： SHARP KK
发明人： TAKIGUCHI HARUHISA , INOGUCHI KAZUHIKO , KUDO HIROAKI , SUGAWARA SATOSHI , TANETANI MOTOTAKA
IPC分类号： H01S5/00 , H01S5/20 , H01S5/22 , H01S5/223 , H01S5/323 , H01S3/18
摘要： PURPOSE:To enable the current constriction capacity to be increased furthermore, the difference in the equivalent refractive indexes inside and outside of a striped trench to be adjusted within a wide range by a method wherein laser beam transmitting layers in addition to a laser beam absorbing layer is to be provided in a photocurrent confirement means so as to adjust the mixed crystal ratio and the thickness of these laser beam transmitting layers. CONSTITUTION:The semiconductor laser is provided with a semiconductor substrate 101, a laminated structure formed on the semiconductor substrate 101 and a current light confirement means 150 formed on the laminated structure 140. The current light confirement means 150 is provided with two multilayer light confirement parts (current light confirement layers) 151a and b as well as a striped trench so as to spatially separate the parts 151a from 151b. 152. The forbidden band widths of laser beam transmitting layers 107 and 109 are specified to be wider than that of an active layer 103 so that the laser beams may transmit these layers 107, 109. Furthermore, the forbidden band width of a laser beam absorbing layer 108 is specified to be narrower than that of the active layer 103 so that the layer 108 may absorb the laser beams.

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