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1. 发明专利

JP2003258284A DYE-SENSITIZED PHOTOELECTRIC CONVERSION DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
公开(公告)号：JP2003258284A
公开(公告)日：2003-09-12
申请号：JP2002055998
申请日：2002-03-01
申请人： SHARP KK
发明人： CHIBA TAKAO , TAKIGUCHI HARUHISA
IPC分类号： H01L31/04 , H01M14/00
摘要： PROBLEM TO BE SOLVED: To provide a dye-sensitized photoelectric conversion device which can effectually utilize the solar light and has a superior photoelectric conversion efficiency, and to provide a solar battery using the same. SOLUTION: In this dye-sensitized photoelectric conversion device, an oxide semiconductor layer which absorbs dye, a first photoelectric conversion layer showing the property of an intrinsic semiconductor or a p-type semiconductor, a second photoelectric conversion layer showing the property of a p-type semiconductor (however, if the first photoelectric conversion layer shows the property of the p-type semiconductor, its impurity concentration is lower than the impurity concentration showing the property of the p-type semiconductor of the second photoelectric conversion layer), and a counter electrode are sequentially laminated on a transparent conductive film. COPYRIGHT: (C)2003,JPO

2. 发明专利

JPH0743131A ANGLE MEASUREMENT METHOD AND DEVICE THEREFOR 失效
公开(公告)号：JPH0743131A
公开(公告)日：1995-02-10
申请号：JP18837393
申请日：1993-07-29
申请人： SHARP KK
发明人： SHIMONAKA ATSUSHI , MORIOKA TATSUYA , KASAI SHUSUKE , TANETANI MOTOTAKA , TAKIGUCHI HARUHISA
IPC分类号： G01B11/26
摘要： PURPOSE:To measure the inclination angle of a measurement object with simple constitution by receiving two coherent beams having angles different from each other, and detecting a signal intensity change corresponding to the light interference fringe on a light receiving element. CONSTITUTION:Coherent beams emitted from a semiconductor laser (GaAlAs laser) 1 are collimated at a step 2, and incident on a translucent mirror 13. Approximately a half of incident beams are reflected on a plane 131, and the remanent thereof is transmitted through the mirror 13 for reflection with a measurement object 8. Furthermore, the reflected beams are respectively incident on a light receiving element 11 and superposed (i.e., shaded portion 14), thereby forming an interference fringe. When the laser 1 is actuated to generate triangular pulses, beat signal current is excited in the shaded portion 14 on the element 11. Also, the amplitude of the beat signal current is suddenly reduced, when the object 8 is inclined. The angle of the object 8 can, therefore, be detected from the variation of the amplitude. In this case, the element 11 is arrayed and positioned in three directions to enlarge the length thereof, thereby enabling light intensity to be maintained. Furthermore, an absolute angle of zero can be easily detected by processing signals from the three-directional element 11.

3. 发明专利

JPH06334266A QUANTUM WELL STRUCTURE 失效
公开(公告)号：JPH06334266A
公开(公告)日：1994-12-02
申请号：JP12027593
申请日：1993-05-21
申请人： SHARP KK
发明人： TAKIGUCHI HARUHISA , TAKAHASHI KOUSEI , MAACHIN DEI DOOSON , JIEFURII JIYUGAN
IPC分类号： H01L21/20 , B82Y10/00 , B82Y20/00 , B82Y40/00 , H01S5/00 , H01S5/34 , H01S5/343 , H01S3/18
摘要： PURPOSE:To confine electrons and positive holes into a quantum well layer efficiently. CONSTITUTION:The title structure body includes a first clad layer 102, a second clad layer 109, and a plurality of quantum well layers 103-107 and one or more barrier layers 108 which are laid out between the first and second clad layers and are alternately laminated. The plurality of quantum well layers include at least two layers which are selected from a group consisting of a layer with a tensile strain, that without the tensile strain, and that with a compression strain. Each layer thickness of the plurality of quantum well layers is selected so that the energy difference between the ground quantum level of electrons at a conduction band and the ground quantum level of positive holes at a valence electron band is virtually equal.

4. 发明专利

JPH0567837A WINDOW-TYPE SEMICONDUCTOR LASER ELEMENT 失效
公开(公告)号：JPH0567837A
公开(公告)日：1993-03-19
申请号：JP22737891
申请日：1991-09-06
申请人： SHARP KK
发明人： TAKIGUCHI HARUHISA , YANO MORICHIKA , INOGUCHI KAZUHIKO , KUDO HIROAKI , NAKANISHI CHITOSE , OKUMURA TOSHIYUKI , SUGAWARA SATOSHI
IPC分类号： H01S5/00 , H01S5/16 , H01S5/20
摘要： PURPOSE:To conform the waveguide modes of the active region inside an element and the window to each other excellently in controllability and form a waveguide path being stable both in vertical and horizontal directions, in a window-type semiconductor laser element. CONSTITUTION:Double hetero structure where an active layer 5 is caught with clad layers 4 and 6 is made on a semiconductor substrate 1. An active region including the active layer 5 is buried in an element by the window waveguide layer 9 as a buried layer. Real guide slab type waveguide path structures, where the window part waveguide layer 9 is caught with window part clad layers 2 and 10 small in the real number parts of complex refractive indexes (large in forbidden band width), is provided at both end faces of the active region. Furthermore, this window is provided with a ridge waveguide path.

5. 发明专利

JPH0563292A SEMICONDUCTOR LASER ELEMENT 失效
公开(公告)号：JPH0563292A
公开(公告)日：1993-03-12
申请号：JP22062491
申请日：1991-08-30
申请人： SHARP KK
发明人： TANETANI MOTOTAKA , KUDO HIROAKI , SUGAWARA SATOSHI , INOGUCHI KAZUHIKO , NAKANISHI CHITOSE , TAKIGUCHI HARUHISA
IPC分类号： H01S5/00
摘要： PURPOSE:To reduce the radiating angle of an optical beam in a direction perpendicular to a substrate and to obtain a beam spot near a true circle by freely designing a distribution of a waveguide refractive index of a direction perpendicular to the substrate without depending upon the intrinsic refractive index of a semiconductor material of an active layer and a clad layer in a semiconductor laser element having a double hetero structure. CONSTITUTION:A double hetero structure, in which an active layer 13 is interposed between a first clad layer 12 and a second clad layer 14 is formed on a substrate 11. The layer 13 has a periodical uneven structure of a sine wave state having an amplitude three times as large as the thickness of the layer in a waveguide direction. An average refractive index nav in which the refractive index near the layer 13 is averaged in a waveguide direction and the refractive indexes nc1 of the layers 12, 14 satisfy a relation formula (nav-Oc1)/nc1

6. 发明专利

JPH04120788A SEMICONDUCTOR LASER 失效
公开(公告)号：JPH04120788A
公开(公告)日：1992-04-21
申请号：JP24171590
申请日：1990-09-11
申请人： SHARP KK
发明人： INOGUCHI KAZUHIKO , TAKIGUCHI HARUHISA , ATSUNUSHI FUMIHIRO , OKUMURA TOSHIYUKI
IPC分类号： H01S5/00
摘要： PURPOSE:To form an active layer having a narrow width with high reproducibility by providing a double hetero structure multilayer film including a laser oscillation active layer having smaller width than that of a stripelike protrusion, and current constriction means formed on the surface region or the surface of a semiconductor substrate. CONSTITUTION:The sides (in planes {221} and {111}) of a stripelike protrusion 11 and the surfaces in plane (100) of an n-type InP substrate 10 at both sides are all covered with Fe-doped InP layers 14. Thereafter, an Al2O3 stripelike mask 17 is removed by using HF solution to obtain an n-type InP substrate 10 having a current constriction structure. In this case, the layer 14 has a high resistance, and is operated as a function of a semi-insulating current constriction layer. An Si-doped n-type InP thin film 12' and a nondoped GalnAsP thin film 13' are sequentially grown, a trapezoidal sectional shape perpendicular to the direction of a resonator is formed on the protrusion 11, and a multilayer film of a double hetero structure surrounded by a B surface in plane (111), i.e., multilayer films of the B surface in plane (111) grown from both ends of the protrusion 11 on its oblique surfaces are formed on the protrusion 11.

7. 发明专利

JPH03227086A SEMICONDUCTOR LASER ELEMENT AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH03227086A
公开(公告)日：1991-10-08
申请号：JP2295490
申请日：1990-01-31
申请人： SHARP KK
发明人： NAKATSU HIROSHI , ATSUNUSHI FUMIHIRO , INOGUCHI KAZUHIKO , OKUMURA TOSHIYUKI , SEKI AKINORI , TAKIGUCHI HARUHISA
IPC分类号： H01S5/00
摘要： PURPOSE:To enable an active layer to be accurately controlled in width by a method wherein a mesa stripe-like multilayered film of double-hereto structure provided with the side face of a {111} plane is selectively grown in a groove formed on a substrate. CONSTITUTION:A dielectric film 2 of SiO2 film is formed on an N-type InP substrate 1, and a groove is formed through photoetching so as to extend along a [011] direction. An N-type InP buffer layer 3, an N-type InP clad layer 4, a non-doped InGaAsP active layer 5, and a P-type InP clad layer 6 are continuously grown on the surface of the substrate 1 in the groove 12. In succession, a mesa stripe-like laminated structure lower part 13 whose side face is a (111) B plane is formed on the groove 12. Next, a P-type InP layer 7 and a P-type InGaAsP cap layer 8 are successively formed through an LPE method. Then, an SOG film 9 is formed on the dielectric film 2, an AuZn electrode 10 is formed on the flattened surface of a wafer, an an AuGe electrode 11 is built on the rear of the substrate 1.

8. 发明专利

JPH03227085A SEMICONDUCTOR LASER ELEMENT AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH03227085A
公开(公告)日：1991-10-08
申请号：JP2295390
申请日：1990-01-31
申请人： SHARP KK
发明人： NAKATSU HIROSHI , INOGUCHI KAZUHIKO , ATSUNUSHI FUMIHIRO , OKUMURA TOSHIYUKI , TAKIGUCHI HARUHISA
IPC分类号： H01S5/00
摘要： PURPOSE:To enable a semiconductor laser to oscillate in a single, basic, horizontal, and lateral mode by a method wherein a dopant containing SOG film is made to serve as a buried layer, and a diffusion region doped with dopant contained by the buried layer is formed in a region adjacent to the buried layer in a mesa stripe structure. CONSTITUTION:An N-type InP buffer layer 2, an active layer 3, a P-type InP clad layer 4, and a P-type GaInAs cap layer 5 are epitaxially grown in succession on an N-type InP buffer layer 2 through a MOCVD method. A resist provided with a mesa stripe pattern is formed on the cap layer 5, which is mesa- etched in an inverted mesa direction. Then, an SOG solution is applied onto a wafer without removing the resist, and then a baking process takes place to form a buried layer formed of an SOG film 6. Furthermore, a baking process is made to continue to enable Zn contained by the SOG film 6 to diffuse into a mesa strip structure. The upside of the wafer is flattened by the buried layer of the SOG film 6, a P-side electrode 7 is formed, and an N-side electrode 8 is provided to the rear of the substrate 1.

9. 发明专利

JPH03183182A SEMICONDUCTOR LASER DEVICE AND ITS MANUFACTURE 失效
公开(公告)号：JPH03183182A
公开(公告)日：1991-08-09
申请号：JP32329589
申请日：1989-12-12
申请人： SHARP KK
发明人： ATSUNUSHI FUMIHIRO , NAKATSU HIROSHI , INOGUCHI KAZUHIKO , OKUMURA TOSHIYUKI , SEKI AKINORI , TAKIGUCHI HARUHISA
IPC分类号： H01S5/00
摘要： PURPOSE:To obtain a laser device capable of controlling the width of an active layer with high accuracy by filling a groove cut in a dielectric film with a mesa-shaped laminated structure including an active layer and by both-siding this laminated structure with a buried layer. CONSTITUTION:A groove 10 cut in a dielectric film 2 on an n-type InP substrate 1 is filled with a multilayered film 11 comprising a mesa-striped laminated structure of Si-doped n-type InP clad layer 3, non-doped GaInAsP active layer 4, Zn-doped p-type InP clad layer 5,and Zn-doped p-type GaInAsP contact layer 6 in this order upward, thereby forming a double hetero structure. The region of the substrate 1 except where the multilayered film spreads is overlaid with a Fe-doped InP current block layer 7, as the buried layer, which has a resistance higher than that of the multilayered film 11 to cover the side of the multilayered film. This constitution can stabilize lateral mode of oscillation and reduce dispersion in characteristics of devices.

10. 发明专利

JPH0252481A SEMICONDUCTOR LASER DEVICE 失效
公开(公告)号：JPH0252481A
公开(公告)日：1990-02-22
申请号：JP20423188
申请日：1988-08-17
申请人： SHARP KK
发明人： KUDO HIROAKI , TAKIGUCHI HARUHISA , SAKANE CHITOSE , SUGAWARA SATOSHI
IPC分类号： H01S5/00 , H01S5/12 , H01S5/24
摘要： PURPOSE:To obtain a connection efficiency which is equivalent to or more than a conventional secondary diffraction grid also in a third diffraction grid by setting the ratio of width between projecting parts of recessed and projecting parts for a period of recesses and projecting areas within a specific range. CONSTITUTION:Periodical recesses and projecting parts are formed at the interface between an n-type light guiding layer 6 and an n-type clad layer 7 to form a diffraction grid 12. The periodical recessed and projecting parts of this diffraction grid 12 are periodically continuous in the direction and the groove formed by these periodical recessed and projecting parts extends in the direction. The period of the recessed and projecting parts is set so that the diffraction grid may be the third one. A connection efficiency (k) due to difference of a duty ratio (W/LAMBDA) when the period of the diffraction grid is set to LAMBDA(3000Angstrom ) and the width of a projecting part 12a of the diffraction grid is set so that the duty ratio (W/LAMBDA) is formed to be closer to 0.20, 0.5, and 0.8 with the height H of the diffraction grid 12 being 1000Angstrom . Namely, the ratio of width of the projecting part of recessed and projecting parts for the period of the recessed and projecting parts stays within the range of 0.20-0.25, 0.40-0.60, and 0.70-0.95. At this time, even in a third rectangular waveform diffraction grid, a sufficient connection efficiency applied to a semiconductor laser device can be obtained.

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