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1. 发明专利

JPH06177480A SEMICONDUCTOR LASER ELEMENT AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH06177480A
公开(公告)日：1994-06-24
申请号：JP27196692
申请日：1992-10-09
申请人： SHARP KK , HIKARI GIJUTSU KENKYU KAIHATSU
发明人： TANETANI MOTOTAKA , TAKIGUCHI HARUHISA , INOGUCHI KAZUHIKO , KUDO HIROAKI , OKUMURA TOSHIYUKI , SUGAWARA SATOSHI
IPC分类号： H01S5/00 , H01S3/18
摘要： PURPOSE:To obtain a vertical resonator type surface emission semiconductor laser element capable of oscillating only linearly polarized light in the desired direction with excellent selectivity. CONSTITUTION:In a semiconductor laser element, in which laser resonance is generated in the direction vertical to a substrate, a plurality of quantum fine lines 110 confining light are formed to an active layer generated by light. Gains larger than the direction orthogonal to the longitudinal direction of the quantum fine lines 110 are generated in the longitudinal direction of the quantum fine lines 110. Consequently, the direction of polarization of generated laser beams can be conformed to the longitudinal direction of the quantum fine lines 110. The center distances of the adjacent fine lines 110 are set in the wavelength or less of light in an LD element. Accordingly, no higher mode is generated in the oscillation transverse mode of laser beams.

2. 发明专利

JPH04299881A QUANTUM THIN LINE LASER 失效
公开(公告)号：JPH04299881A
公开(公告)日：1992-10-23
申请号：JP6432391
申请日：1991-03-28
申请人： HIKARI GIJUTSU KENKYU KAIHATSU , SHARP KK
发明人： TAKIGUCHI HARUHISA , KUDO HIROAKI , TANETANI MOTOTAKA , SUGAWARA SATOSHI
IPC分类号： H01S5/00 , H01S5/12 , H01S5/20 , H01S5/223 , H01S5/227 , H01S5/34 , H01S5/343
摘要： PURPOSE:To form a quantum thin line semiconductor laser of a current injection type having a two-dimensional quantum level, by arranging a second lamination layer structure containing a second quantum well on the lamination layer section of a first lamination layer structure containing a first quantum well, and enaling determining of the form and size of the quantum thin line by film thickness control. CONSTITUTION:A first un-AlGaAs quantum well 14 is formed so as to be surrounded by three AlGaAs barrier layers 13, 15, 16. A second un-GaAs quantum well 17 is formed in the vicinity of the first quantum well 14. Hence the quantum level energy of intersection regions (b), (c) becomes small as compared with an intersection region (a), so that electrons are confined in the intersection region (a), and a quantum thin line is realized. The level energy of quantum thin line is uniquely determined by the thicknesses of (well widths) of the first and the second quantum wells 14, 17, the thickness of the barrier layer 16, and the forbidden bandwidth of each of the barrier layers 13, 15, 16, 18 and the quantum wells 14, 17.

3. 发明专利

JPH04299880A QUANTUM THIN LINE STRUCTURE AND ITS FORMATION 失效
公开(公告)号：JPH04299880A
公开(公告)日：1992-10-23
申请号：JP6432291
申请日：1991-03-28
申请人： HIKARI GIJUTSU KENKYU KAIHATSU , SHARP KK
发明人： TANETANI MOTOTAKA , KUDO HIROAKI , SUGAWARA SATOSHI , TAKIGUCHI HARUHISA
IPC分类号： H01L21/20 , H01L29/06 , H01L29/12 , H01L29/80 , H01L33/06 , H01L33/14 , H01L33/22 , H01L33/30 , H01S5/00 , H01S5/34
摘要： PURPOSE:To form quantum thin line structure with excellent controllability and reproducibility, by arranging a region having a specified width whose curvature is comparatively small and a region having a specified width whose curvature is comparatively large, in a quantum thin line layer whose thickness is sufficiently smaller than the de Broglie wavelength of electron wave in medium. CONSTITUTION:A quantum thin line layer 104 is constituted of flat parts 106 about 20nm wide and bent parts 107 between them. The thickness of the quantum thin line layer 104 is sufficiently small (thinner than or equal to about 10nm). The radius of carvature of the bent part 107 is equal to or smaller than the de Broglie wavelength (smaller than or equal to 50nm). The potential which exerts influence upon electrons confined in the quantum thin lines (corresponding to the flat parts 106) formed in the above manner is determined by materials constituting the quantum thin line layer 104 and barrier layers 103, 105, the thickness of the quantum thin line layer 104, and the width of the flat parts 106. Hence these parameters can be controlled with excellent controllability and reproducibility in both a crystal growth process and a fine working process.

4. 发明专利

JPH01137629A ELECTRON BEAM EXPOSURE 失效
公开(公告)号：JPH01137629A
公开(公告)日：1989-05-30
申请号：JP29726687
申请日：1987-11-24
申请人： HIKARI GIJUTSU KENKYU KAIHATSU
发明人： KUDO HIROAKI , TAKIGUCHI HARUHISA , SAKANE CHITOSE
IPC分类号： G03F7/20 , H01L21/027 , H01L21/30
摘要： PURPOSE:To improve a throughput significantly by a method wherein an electron beam is pulsed out and applied to a position moved one pulse application after another to arbitrary positions to achieve dot type exposure and a diffraction lattice and a Fresnel lens are lithographed within one several tenth of the time. CONSTITUTION:An electron beam is converged by a condensor lens 2 onto a sample 1 and the luminance of the electron beam can be varied by the excitation of the lens 2. The position to which the electron beam is applied is determined by an electron beam scanning coil 3. In order to pulse out and apply the electron beam to expose resist on the sample 1, the electron beam is so controlled by an electron beam deflecting electrode 4 as to be applied to the sample in a blanking state and to be applied to the sample while an unblanking pulse is inputted. With this constitution, a diffraction lattice and a Fresnel lens can be lithographed within one several tenth of the time so that the throughput can be improved significantly.

5. 发明专利

JP2875929B2 失效
公开(公告)号：JP2875929B2
公开(公告)日：1999-03-31
申请号：JP27196692
申请日：1992-10-09
申请人： SHAAPU KK , HIKARI GIJUTSU KENKYU KAIHATSU KK
发明人： TANETANI MOTOTAKA , TAKIGUCHI HARUHISA , INOGUCHI KAZUHIKO , KUDO HIROAKI , OKUMURA TOSHUKI , SUGAWARA SATOSHI
IPC分类号： H01S5/00 , H01S3/18

6. 发明专利

JPH09246514A AMPLIFICATION TYPE SOLID-STATE IMAGE SENSING DEVICE 失效
公开(公告)号：JPH09246514A
公开(公告)日：1997-09-19
申请号：JP5523496
申请日：1996-03-12
申请人： SHARP KK
发明人： WATANABE YASUSHI , KUDO HIROAKI
IPC分类号： H01L27/146 , H04N5/335 , H04N5/355 , H04N5/357 , H04N5/369 , H04N5/3745 , H04N5/376
摘要： PROBLEM TO BE SOLVED: To readily optimize a voltage for driving by forming an image sensor part and a driving circuit part separately in a second conductivity type semiconductor layer formed apart from each other in a first conductivity type semiconductor board. SOLUTION: An amplification type solid-state image sensing device has an image sensor part A with a TGMIS type picture element and a driving circuit part B which is a peripheral circuit thereof. Both the parts are formed separately in well layers 21, 120 which are apart from each other in a semiconductor board 100. Therefore, the electric potential of each layer can be set independently. Since various voltages for driving can be set in a driving circuit part, the voltage can be optimized readily. Furthermore, a freedom of a voltage can be also greatly raised in a signal processing part and a large dynamic range can be realized, thus making a great contribution to realization of an amplification type solid-state image sensing device which is excellent in picture element characteristics.

7. 发明专利

JPH05198896A SEMICONDUCTOR ELEMENT 失效
公开(公告)号：JPH05198896A
公开(公告)日：1993-08-06
申请号：JP16462092
申请日：1992-06-23
申请人： SHARP KK
发明人： KUDO HIROAKI , INOGUCHI KAZUHIKO , SUGAWARA SATOSHI , TAKIGUCHI HARUHISA
IPC分类号： H01L27/15 , H01L29/68 , H01S5/00 , H01S5/12
摘要： PURPOSE:To obtain a wavelength control type semiconductor laser excellent in characteristics wherein the deqree of freedom of ease structure of formation is high. CONSTITUTION:On a semiconductor substrate 101 having a periodical uneven structure 106, an optical waveguide region or a light emitting region is flatly epitaxially grown, in the manner in which gain distribution and/or refractive index distribution reflects the uneven structure 106 and periodically distributes, thereby forming a wavelength control type semiconductor laser.

8. 发明专利

JPH051992B2 失效
公开(公告)号：JPH051992B2
公开(公告)日：1993-01-11
申请号：JP23948086
申请日：1986-10-08
申请人： SHARP KK
发明人： YOSHIDA TOMOHIKO , TAKIGUCHI HARUHISA , KANEIWA SHINJI , KUDO HIROAKI
IPC分类号： H01S5/00 , H01S5/042 , H01S5/10 , H01S5/12 , H01S5/40

9. 发明专利

JPH04371070A LIGHT BEAM SCANNER 失效
公开(公告)号：JPH04371070A
公开(公告)日：1992-12-24
申请号：JP14747691
申请日：1991-06-19
申请人： SHARP KK
发明人： NAKANISHI CHITOSE , TAKIGUCHI HARUHISA , TANETANI MOTOTAKA , INOGUCHI KAZUHIKO , KUDO HIROAKI , SUGAWARA SATOSHI
IPC分类号： G02B26/10 , H04N1/04 , H04N1/113
摘要： PURPOSE:To suppress the change in wavelength of a laser beam emitting from a semiconductor laser element 10 which is a light source and to stably perform scanning with the laser beam. CONSTITUTION:A laser beam 11 emitting from a semiconductor laser element 10 provided with an active area 14 and a wavelength control area 15 scans a photosensitive drum 33 by means of a hologram scanner 32. A video pattern signal from a video signal output part 60 to be supplied to an ohmic electrode 16 for oscillating the laser beam in the active area 14 of the semiconductor laser element 10 is passed to a conversion electrode 17 of the wavelength control area 15 in the semiconductor laser element 10 via a low pass filter circuit 70 and a wavelength control driver 71. Current corresponding to the low frequency component of the video pattern signal is supplied to the conversion electrode 17 and the wavelength of the laser beam is changed so that the change in wavelength of the laser beam oscillated from the active area 14 can be compensated.

10. 发明专利

JPH0430490A MANUFACTURE OF SEMICONDUCTOR LASER ELEMENT 失效
公开(公告)号：JPH0430490A
公开(公告)日：1992-02-03
申请号：JP13657490
申请日：1990-05-25
申请人： SHARP KK
发明人： NAKANISHI CHITOSE , TAKIGUCHI HARUHISA , KUDO HIROAKI , SUGAWARA SATOSHI
IPC分类号： H01S5/00 , H01S5/12
摘要： PURPOSE:To enable a semiconductor laser element to stably oscillate laser rays in a single longitudinal mode and to efficiently emit laser rays in a single longitudinal mode and to efficiently emit laser rays of high power by a method wherein a rugged part is formed through a wet etching method and a dry etching method. CONSTITUTION:An optical waveguide layer 5 is formed on the upside of a semiconductor substrate 1, and a laminated structure 12 where a first clad layer 2, an active layer 3, and a second clad layer 6 are laminated in this sequence is provided onto a prescribed region C on the layer 5. A rugged part of periodic structure possessed of a certain period is provided to regions A and B on the layer 5 where the structure 12 is not formed to form a first diffraction grating structure 13 and a second diffraction grating structure 14. In this case, the surface of the region A is etched through a wet etching method and the surface of the region B is etched by a dry etching method. The structure 13 is formed into a periodic structure of sine waves in cross section, and the structure 14 is formed into a periodic structure of rectangular waves in cross section. By this setup, a semiconductor laser of this design can efficiently emit laser rays of high power.

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