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1. 发明专利

JPH1025573A PRODUCTION OF DIELECTRIC THIN FILM 失效
公开(公告)号：JPH1025573A
公开(公告)日：1998-01-27
申请号：JP17909796
申请日：1996-07-09
申请人： SHARP KK
发明人： MASUDA YOSHIYUKI , KITA RYUSUKE , MATSU YOSHIYUKI , OTANI NOBORU , YANO MORICHIKA
IPC分类号： C23C14/40
摘要： PROBLEM TO BE SOLVED: To provide a process for producing a dielectric thin film capable of forming the dielectric thin film having nearly a uniform film thickness and uniform electric characteristics in a process for producing the dielectric thin film by a high-frequency sputtering method. SOLUTION: This process for producing the dielectric thin film by the high-frequency sputtering method comprises introducing gases into a vacuum chamber 1, impressing the high frequency electric field on a sputtering target 7 arranged in the chamber 1, and forming the dielectric thin film on a substrate 3 arranged in the position facing the sputtering target 7. In such a case, a lower electrode electrically connected to the substrate 3 is arranged on the substrate 3 and the dielectric thin film is formed on this lower electrode in the state that the substrate 3 is held electrically grounded.

2. 发明专利

JPH09121076A SEMICONDUCTOR LASER DEVICE 失效
公开(公告)号：JPH09121076A
公开(公告)日：1997-05-06
申请号：JP23042996
申请日：1996-08-30
申请人： SHARP KK
发明人： KASAI SHUSUKE , MORIMOTO TAIJI , KANEIWA SHINJI , HAYASHI HIROSHI , MIYAUCHI NOBUYUKI , YANO MORICHIKA , SHIOMOTO TAKEHIRO , SASAKI KAZUAKI , MATSUMOTO AKIHIRO , KONDO MASAKI , YAMAMOTO SABURO
IPC分类号： G11B7/125 , H01L21/314 , H01S5/00 , H01S5/30 , H01S3/18
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor laser device wherein end surface destruction is hard to be caused, by forming a film containing sulfur between an end surface and a protection surface, so that a surface level caused by an oxide in a light exist end surface is controlled. SOLUTION: A lamination structure 12 containing an AlGaAs active layer 16 is grown on a semiconductor substrate 11, and resistance electrodes 13 and 14 are formed on both surfaces. Next, a bar is soaked in aqueous solution of (NH4 )2 S, for surface treatment of a cut-off surface. By this, a film 18 containing sulfur is formed on an end surface. After this, the bar is washed and dried, and a reflecting film 17 is formed on the end surface on the rear surface side in an electron beam vapor deposition manner. And the bar is cut out further, for obtaining a semiconductor laser device. By this, the film 18 containing sulfur is formed on the end surface of the semiconductor laser device containing the active layer 16 containing Al, so that the surface level of the end surface is reduced. So that deterioration due to exothermic of the light exit end surface caused by light surface recombination is controlled.

3. 发明专利

JPH09115429A FIELD EMISSION TYPE ELECTRON SOURCE ELEMENT AND ITS MANUFACTURE 失效
公开(公告)号：JPH09115429A
公开(公告)日：1997-05-02
申请号：JP27235795
申请日：1995-10-20
申请人： SHARP KK
发明人： URAYAMA MASAO , TAKEGAWA YOSHIYUKI , MORITA HIROKO , YANO MORICHIKA
IPC分类号： H01J9/02 , H01J1/30 , H01J1/304
摘要： PROBLEM TO BE SOLVED: To improve high reliability and element characteristics such as low voltage driving by shortening a distance between an electron emitting part and a gate electrode, and selecting various materials as a material of the electron emitting part. SOLUTION: This electron source element is formed by working a surface of a slicon substrate 3, and is composed of a silicon projecting part 1 being a cold cathode to emit an electron on the basis of the principle of electron emission and a gate electrode layer 5 arranged on the periphery of the silicon projecting part 1 through an insulating layer 4. An end part of the gate electrode layer 5 is formed in the shape of projecting so as to surround the tip of the silicon projecting part 1, and a space 6 is arranged so that a distance between the tip of the silicon projecting part 1 and an end part of the insulating layer 4 in the plane direction of the silicon substrate 3 becomes larger than a distance between the tip of the silicon projecting part 1 and an end part of the gate electrode layer 5 in the plane direction of the silicon substrate 3, and surface coat layers 2a and 2b are arranged on a surface in the tip vicinity of the silicon projecting part 1 and the gate electrode layer 5, and a field emission type electron source element is constituted.

4. 发明专利

JPH09106756A ELECTRIC FIELD EMISSION TYPE ELECTRON DEVICE AND ITS MANUFACTURE 失效
公开(公告)号：JPH09106756A
公开(公告)日：1997-04-22
申请号：JP26412995
申请日：1995-10-12
申请人： SHARP KK
发明人： YANO MORICHIKA , URAYAMA MASAO , TAKEGAWA YOSHIYUKI , TOKUMARU TERUTAKA , MORITA HIROKO , SAWAHATA JUNICHI
IPC分类号： H01J9/02 , H01J1/30 , H01J1/304 , H01J29/04 , H01J31/12
摘要： PROBLEM TO BE SOLVED: To stabilize an anode current, and handle a heavy-current in an array without causing deterioration of integration and yield. SOLUTION: On an N type Si semiconductor substrate 1, a P type Si semiconductor layer 2, and an N type Si semiconductor layer 3 are successively stacked to manufacture a substrate having an NPN transistor structure. After the surface of the substrate is wet-oxidized to form a mask layer 4, patterning and etching are conducted on the mask layer 4 so as to form a circular mask 5. The substrate is etched via the mask 5 so as to form a protrusion portion 6 to be the base of a cold cathode. The surface of the protrusion portion 6- formed substrate is wet-oxidized to form a gate insulation film 7. On the gate insolation film 7, Nb is deposited to form a gate electrode 8, and the mask 5 is removed by etching causing the cold cathode 9 to be exposed.

5. 发明专利

JPH08273528A MANUFACTURE OF FIELD-EMISSION ELECTRON SOURCE AND ELEMENT STRUCTURE OF ELECTRON SOURCE FOR IT 失效
公开(公告)号：JPH08273528A
公开(公告)日：1996-10-18
申请号：JP7780095
申请日：1995-04-03
申请人： SHARP KK
发明人： YANO MORICHIKA , URAYAMA MASAO , TAKEGAWA HISASHI , MORITA HIROKO
IPC分类号： H01J1/30 , H01J1/304 , H01J9/02
摘要： PURPOSE: To prevent oxidation of an emitter and to simplify processes. CONSTITUTION: A cathode 2 is formed by evaporation of nickel over a glass substrate 1, and an insulating film 3 is formed by accumulation of silicon dioxide on the cathode 2 using sputtering method, after which nickel is evaporated over the insulating film 3 to form a gate electrode 4. A hole is formed on the glass substrate 1 by lithography for patterning. Next, the gate electrode 4 and the, insulating film 3 are selectively etched to form a hole 5 for formation of an emitter which releases electrons. Nickel is accumulated in the hole 5 by an evaporation method to form the emitter 6, following which sulfur serving as a high-vapor-pressure material is put over the emitter 6 to form a high-vapor- pressure material layer 7.

6. 发明专利

JPH08162031A ANODE FOR FLAT PLATE TYPE MAGNETRON AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH08162031A
公开(公告)日：1996-06-21
申请号：JP30367994
申请日：1994-12-07
申请人： SHARP KK
发明人： IDE TETSUYA , YANO MORICHIKA
IPC分类号： H01J9/14 , H01J23/20 , H01J23/22
摘要： PURPOSE: To obtain a flat plate type magnetron capable of preventing a vein from being deformed, improving its oscillation efficiency by electrically alternately connecting veins and processing easily and precisely. CONSTITUTION: This anode 10 is structured in which plural flat plate shaped veins 2 and 3 are erected in a line in the same pitch. By shifting an even n-th vein 2 and an even n-th vein 3, an anode side surface 1a of one side is formed at an end surface 2a of an odd n-th vein 2, and an anode side surface 1b of the other side is formed at an end surface 3b of the even n-th vent 3. A constant pressure plate 4 made of conductors on both anode side surface 1a and 1b, respectively, is bonded. The constant pressure plate 4 bonded on the anode side surface 1a is bonded to the end surface 2a of the vein 2, and the constant pressure plate bonded to the anode side surface 1b (not illustrated) is bonded to the end surface 3b of the even n-th vain 3.

7. 发明专利

JPH0777713A FIBER TYPE WAVELENGTH CONVERSION ELEMENT AND ITS PRODUCTION 失效
公开(公告)号：JPH0777713A
公开(公告)日：1995-03-20
申请号：JP24980293
申请日：1993-09-09
申请人： SHARP KK
发明人： IDE TETSUYA , KIJIMA TAKESHI , YANO MORICHIKA
IPC分类号： C03B37/14 , C03B37/012 , G02B6/00 , G02B6/02 , G02F1/37 , G02B6/16
摘要： PURPOSE:To obtain higher harmonic output of high output by lowering the light loss of the optical glass capillary of the fiber type wavelength conversion element and improving the conversion efficiency thereof. CONSTITUTION:The capillary drawn out of a preform (master pipe) formed with a hollow part is heated up to about its softening point temp. and is thereafter slowly cooled. A nonlinear optical material is then packed into the hollow part of the capillary to produce the fiber type wavelength conversion element. The softening temp. of, for example, glass of a heavy flint type is 495 deg.C if the glass is used as the material of the glass capillary and, therefore, the glass capillary is heat treated at a temp. around the softening point temp. The fiber type wavelength conversion element is thus composed of the core consisting of the nonlinear optical material and the strainless optical glass enclosing the core.

8. 发明专利

JPH0416033B2 失效
公开(公告)号：JPH0416033B2
公开(公告)日：1992-03-19
申请号：JP8924982
申请日：1982-05-25
申请人： SHARP KK
发明人： YAMAMOTO SABURO , HAYASHI HIROSHI , YANO MORICHIKA
IPC分类号： H01L21/208 , H01S5/00 , H01S5/24

9. 发明专利

JPH03224284A SEMICONDUCTOR LASER DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH03224284A
公开(公告)日：1991-10-03
申请号：JP2490390
申请日：1990-02-02
申请人： SHARP KK
发明人： KASAI SHUSUKE , MORIMOTO TAIJI , KANEIWA SHINJI , HAYASHI HIROSHI , MIYAUCHI NOBUYUKI , YANO MORICHIKA , SHIOMOTO TAKEHIRO , SASAKI KAZUAKI , MATSUMOTO AKIHIRO , KONDO MASAKI , YAMAMOTO SABURO
IPC分类号： H01S5/00
摘要： PURPOSE:To manufacture a semiconductor laser device which can effectively suppress its deterioration caused by the heat produced at the light emission edge of the device due to surface re-coupling by forming a film containing S to the end face provided with an AlGaAs active layer so as to largely reduce the surface level of the edge. CONSTITUTION:A laminated body 12 containing an AlGaAs active layer is made to grow on a semiconductor substrate 11 and resistive electrodes 13 and 14 are formed on both surfaces of the body thus formed. Then bars 15 respectively constituted of a plurality of resonator units arranged in the direction perpendicular to the direction of the resonators are formed by cutting the body along the cleavage of the body. Immediately after the cutting, the bars 15 are dipped in, for example, the 10% aqueous solution 20 of (NH4)2S for a period of specific minutes at a room temperature so as to make surface treatment on the cut surface. As a result, films 18 containing S are respectively formed on the edges of the bars 15. Then a reflecting film 17 of an Al2O3 film and another reflecting film having a multilayered structure of Al2O3 and amorphous Si and having a reflectivity of, for example, 95% are respectively formed on the surface- and rear-side edges of each bar 15 after the bar 15 is washed with water and dried. Thereafter, each bar 15 is further cut into pieces and semiconductor laser devices are obtained.

10. 发明专利

JPH0252869B2 失效
公开(公告)号：JPH0252869B2
公开(公告)日：1990-11-14
申请号：JP11987483
申请日：1983-06-30
申请人： SHARP KK
发明人： YANO MORICHIKA , YAMAMOTO SABURO , HAYASHI HIROSHI , MATSUI KANEKI , TAKIGUCHI HARUHISA
IPC分类号： H01S5/00 , H01S5/24

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